• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.493-501
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• 2013

LED lighting is sensitive because it made by semiconductor. So it has been researched about radiation of heat technologies for a long time. In addition, measurement and assessment a radiation of heat also conducted. It is necessary to get a date of accuracy temperature on the board after LED driven for measuring Junction temperature of the LED Lighting. For this research, we use 5 chip which is 4 W power on top of LED lighting board made by aluminum. Thermal camera effects to emissivity depending on material and property of the surface in LED board because it determines thermal energy which emitted from material surface. it is not only thermal camera has not a standard about emissivity. It has an error of temperature when emissivity was measured by thermal camera. we confirmed that emissivity and reflected temperature depending on color and quality of the surface throughout experiment.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.10
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• pp.1-8
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• 2014

Heat dissipation of the high power LED is a critical issue. To estimate the junction temperature of the LED chip is most important in characterizing the heat dissipation, but it is impossible to directly measure it. In this study, surface temperatures of the 12.8W LED bulb was measured for 5 points using a data logger and compared with the simulated results using a thermal simulator based on FVM (finite volume method) to secure a reliability of the simulation. Effects of some factors such as lens, emissivity and air inlet were investigated using simulation works and then the results were analysed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.73-78
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• 2008

A resistor network model for the horizontal AlInGaN LED was investigated, The parameters of the proposed model are extracted from the test dies and $350{\mu}m$ LED, The center of the P-area is the optimal position of a P-electrode by the simulation using the model. Also the optimal chip size of the LED for the new target current was investigated, Comparing the simulation and fabrication result, the errors for the forward voltage and the light power are average 0,02 V, 8 % respectively, So the proposed resistor network model with the linear forward voltage approximation and the exponential light power model are useful in the simulation for the horizontal AlInGaN LED.

• The Journal of Information Systems
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• v.20 no.3
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• pp.111-127
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• 2011

This study is intended for international cooperation in the field of LED were analyzed. The results, LED wide coverage areas, and a promising future is expected to grow fast enough to occupancy for a major national technology is a competitive situation. Chip Scale Package, including our country, such as LED manufacturing technology that might be competitive in parts, but new technologies such as renal substrate R&D and technology development still active preemption is not the situation. Renal substrate, particularly, large-diameter sapphire, large size/large LED manufacturers, such as a promising area for future research and development support will be needed. To do this, previous research in this area and the U.S., Japan cooperation in such studies also will need to expand. Bibliometrics way through this study, analytical techniques and analytical tools used in the integrated analysis of the usefulness and necessity of the system development were found.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.38-41
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• 2010

Compared to conventional molding technology, the color uniformity of light direction emitted from LED is improved with PCB type lead frame technology in which metal thin film is used and transfer molding technology which makes the density of phosphor uniform by manufacturing high density LED lamp. The light efficiency and the color uniformity of the LED are improved by molding the phosphor layer outside of chip and controlling the thickness of the phosphor layer. CIE x,y difference of LED in major axis is also improved uniformly from 0 to 90 degrees.

• Korean Journal of Optics and Photonics
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• v.20 no.4
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• pp.236-240
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• 2009

LED modules, based on MCPCB with a hard barrier oxide layer and an improved thermal dissipation property, are presented. Reflecting cups were also formed on the surface of the MCPCB such that optical coupling between neighboring chips was minimized for improving the photon absorption loss. LED chips were directly attached on the MCPCB by using the COB (Chip On Board) scheme. The LED modules showed significantly enhanced light outputs, compared to the LED modules based on conventional MCPCBs.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.7B
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• pp.606-612
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• 2012

Visible light communications (VLC) uses modern solid-state LEDs to broadcast information. Emerging white-light LEDs allows the combination of lighting and optical wireless communication in one optical source. In this paper, a new LED lighting using one-chip-type white LED is proposed for efficient illumination and optical wireless communications. Performance analysis such as horizontal illuminance, 3-dB cut-off frequency, inter-symbol interference, signal-to-noise ratio and bit-error rate shows the effects of the shapes of LED lighting. Performance of the proposed LED lighting under the existence of obstacles is superior to that of the existing LED lighting in illumination and optical wireless communication.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.7
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• pp.1-12
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• 2014

This paper is proposed to design the new heat-sink apparatus for improving the heat transfer characteristics in the power LED chip, and results of the operation characteristics were discussed. The core design is that the soldering through-hole on the FR-4 PCB board is formed to the effective heat transfer. That is directly filled with Ag-nano materials, which shows the high thermal conductivity. The heat transfer medium consisting of Ag-nano materials is classified into two structures. Mediums are called as the heat slug and the multi-pin in this work. The heat of the high temperature generated from the LED chip was directly transferred to the heat slug of the one large size. And the accumulated heat from the heat slug was quickly dissipated by the medium of the multi-pin, which is the same body with the heat slug. This multi-pin was designed for the multi-dissipation of heat by increasing the surface areas with a little pins. Subsequently, the speed of the heat transfer with this new heat-sink apparatus is three times faster than the conventional heat-sink. Therefore, the efficiency of the illuminating light will be improved by adapting this new heat-sink apparatus in the large area's LED.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.11a
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• pp.107-109
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• 2007

LED is expected as an environmentally friendly light source with its good reliability and long lifetime. A few ten mW white LED can substitute for the indicator light source, and it is required to study several watt multi-chip semiconductor light sources in order to replace the light sources for general illumination such as incandescent lights and fluorescent lamps. Since the optical technology used for several mW white LED light source uses only 30% to 50% of the light, it is required to develop the design technology of optical system and lens to improve the efficiency more than 80% for insuring the high power of white LED. In this paper, we designed and fabricated new structure reflector to increase the efficiency.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.65-65
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• 2003

청색 발광 LEDs의 개발과 상용화 이후에 백색조명등의 응용 가능성으로 인하여 이에 대한 많은 연구가 최근에 계속되고 있다 하지만 GaN의 많은 광학적인 장점에도 불구하고 이러한 소자의 기판으로 사용되고 있는 sapphire의 열악한 열적 특성은 소자의 열화를 야기할 수 있으며 특히 고출력작동 시에 소자성능 저하의 원인이 될 수 있다. 따라서 이러한 GaN를 기본으로 하는 LED의 경우 이에 대한 정확한 열 측정과 고출력 작동 시의 열적 모델링은 칩과 패키징 단위에서 모두 중요한 연구분야가 되고 있다. 고출력 GaN LED에 대하여 신뢰성에 관한 몇 가지 보고가 있지만, 이러한 보고의 대부분은 패키징 된 램프에 대한 분석이며 정작 칩에 대한 근본적인 열 분석과 신뢰성에 대한 연구결과는 미미한 실정이다 따라서 본 연구에서는 GaN LED 칩에 대하여 직접적인 열 분석을 시도하였다