• Journal of the Korean Institute of Telematics and Electronics B
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• v.32B no.5
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• pp.710-719
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• 1995

In LD driver with HBT's. the speed characteristics of HBT's are deteriorated very much mainly due to the source resistance(Rs) of the signal applied to the LD driving HBT. We improved the bandwidth of LD driver by 2-5GHz with modifications of EF buffer. Because the modified buffers are composed of EF structure, their bandwidths are decreased rapidly as Rs is increased. When Rs is large these buffers decrease the bandwidth of the LD driver rather than increase it. To solve this problem, we propose a new buffer structure which contaings new charging and discharging path for the parasitic collector capacitance of the HBT. For Rs>100${\Omega}$, it shows superior characteristics of improving bandwidth to the EF buffers. It also shows good gain characteristics.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.3
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• pp.667-673
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• 2015

A laser diode(LD) has been studied in many fields what medical, industrial processing, sensor, advertising equipment, printing equipment. And the LD is being used in industry. However, LD will require precision handling. Therefore, the actual use of LD is limited to areas of specialization. In this study, attend to the characteristics of the LD what weak to electrostatic and physical impact, current and heat. And will make a sample module that use comfortably a various wavelength LD. Furthermore, Furthermore, through the printing CTP(Computer to Plate) equipment used the 128-channel LD-Driver, compares it with a 64-channel CTP device about the print speed and resolution. And will solved the problem of delay between the dot and the dot. Finally, consider the potential of the 256-channel LD-Driver.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.445-448
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• 2007

소형 LD 구동 장치를 개발하고, 그 성능을 평가하였다. 개발된 장치는 사용 및 이동이 편리하도록 소형으로 제작되었으며, 안정적인 LD의 구동을 위해 AGC(Auto Gain Control) 및 APC(Auto Power Control)를 적용하였다. 개발된 장치의 LD구동전류 안정도는 $100{\mu}AmA$ 이내로 레이저 광 출력 안정도는 0.07mW이하로 안정된 구동 성능을 나타내었다.

• 한국정보통신설비학회:학술대회논문집
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• 2004.08a
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• pp.37-40
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• 2004

본 논문에서는 $0.35{\mu}m$ CMOS공정을 이용하여 2.5 Gbps로 동작하는 LD(Laser Diode) 구동기를 설계하였다. 전기 신호를 광 신호로 변환시켜 주는 레이저 다이오드(LD)를 동작시키기 위해서는 LD 구동기가 필요하게 되며, LD 구동기는 크게 LD 문턱전류 이상의 전류를 공급하기 위한 바이어스부와 바이어스 전류를 기반으로 전기신호를 광신호로 변조하는 변조부로 나뉘어 진다. 설계한 LD 구동기는 LD의 등가회로를 이용하여 모의실험 과정을 거쳤으며, MOSFET의 GATE단에 안정된 입력전압을 인가함으로써 안정된 바이어스 전류의 공급을 꾀하였다. 디자인된 LD 구동기는 11 mA 정도의 바이어스 전류를 공급하여 주었으며, 4 mA 정도의 변조전류를 공급한다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.49-58
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• 1998

In this paper, a new equivalent circuit model for quantum-well laser diode (LD) is proposed. The model includes carrier transport effects in the SCH region, and rprovides, in a stable and accurate manner, large-and small-signal responses of laser diode output power as function of injected currents. SPICE simulation was performed using the circuit model and results are presented for L-I characteristics, pulse and frequency responses under various conditions. It is expencted that the new equaivalent circuit model will find useful applications for designing and analyzing OEIC, LD driver circuits, and LD packaging.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.7 no.4
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• pp.147-150
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• 2014

In this paper, pulse current type power supply for laser diode dirver is discussed. High speed high power laser has been using widely because it becomes using on medical or manufacturing equipment, but researches have not being occurred actively. Current profiling method is proposed for improved lifetime expectancy of laser diode(LD). The current waveform of driving LD is most important factor of the performance and lifetime of LD. The proposed method improves shape and stability of current waveforms, thus will effect right direction of lifetime expectation.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.52-59
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• 1997

Design and performance of principal four ICs for the 10-Gb/s optical communication system are presented. AlGaAs/GaAs HBTs are basic devices to implement a laser diode driver, apre-amplifier, and a limiting amplifier, and GaInP/GaAs HBTs are used for an AGC amplifier. We fbricated 11.5-GHz LD driver, a pre-amplifier, and a limiting amplifier, an dGaInP/GaAs HBTs are used for an AGC amplifier. We fabricated LD deriver, 10.5 GHz pre amplifier, 7.2 GHz AGC amplifier, and 10.3 GHz limiting amplifier, optimized circuit design and the stabilized MMIC fabrication process.

• Journal of Internet Computing and Services
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• v.8 no.2
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• pp.67-76
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• 2007

Data used for the SFP module are stored in A0 and A2 memory area based on the SFP-MSA standard. In this paper the auto set-up program for SFP module has been designed and implemented. In order to make the Digital Diagnostic Monitoring Interface, the specific value has been written into the designated register via RS232 communication channel in the LD Driver IC. The Agilent VEE is used as a programming language for factory automation, and optical characteristics of SFP module and SFP-MSA standard are main structure of the implementation. The implemented program has been applied to the manufacturing field and the system gains a higher effect than the result of 6-Sigma.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.5A
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• pp.376-381
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• 2005

In this paper, we propose a new wavelength locking structure which uses the Michelson interferometer equipped with a movable arm. The proposed one consists of LD driver, Michelson interferometer, automatic temperature controller, automatic power controller, and signal processor. This structure can provide the wavelength locking capability of a resolution below 0.0005nm(=62.4MHz) and cope easily with an external environment variation using movable arm of Michelson interferometer to give a good stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.353-356
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• 1996

Ultra-high-speed analog and digital ICs (integrated circuits) fur 10Gbit/sec optical communication systems have been designed, fabricated and analyzed in this research. These circuits, which are laser diode (LD) driver, pre-amplifier, automatic gain controlled (AGC) amplifier, limiting amplifier and decision circuit, have been implemented with AIGaAs/GaAs heterojunction bipolar transistors (HBTs). The optimized AIGaAs/GaAs HBTs for the 10Gbps circuits in this work showed the cutoff and maximum oscillation frequencies of 65㎓ and 53㎓, respectively. It is demonstrated in this paper that the 10Gbps optical communication system can be realized with the ICs designed and fabricated using AlGaAs/GaAs HBTs.