• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.288-289
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• 2006

The tilt angle generation of nematic liquid crystal(NLC) on the homeotropic polyimide(PI) surface by the new Ion beam alignment method is studied. The tilt angle of NLC on the homeotropic PI surface for all incident angle is about 38and this has a stabilization trend. And the good LC alignment of the NLC on the PI surface by ion beam exposure of 45Incident angle was observed. Also the tilt angle of NLC on the homeotropic PI surface by ion beam exposure of 45Incident angle had a tendency to decrease as ion beam energy density increase. So we had known that pretilit angle could be controlled from verticality to horizontality.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.883-886
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• 2008

In optical information technology, an electro-controllable Photonic Band Gap (PBG) in a photonic crystal (PC) material is potentially useful for the manipulation of light. Despite a great deal of research on PBGs, the reliable use of electro-active PBG material systems is restricted to only a few cases because of the complex and limiting nature of the structures involved. Here, we propose a PBG system that uses a liquid crystal (LC) polymer composite. The composite is made of nematic LCs (NLCs) embedded in polymeric helical networks of photo-polymerized cholesteric LCs (CLCs). The composite film shows a large field-induced reversible color shift over 150 nm of the reflection band, due to the reorientational undulation of the helical axis, similar to the Helfrich effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.972-975
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• 2003

We have performed computer simulation to obtain electro-optic characteristics of reflective hybrid aligned nematic liquid crystal displays driven by fringe field. The results show that the optimal retardation value of the cell is $0.289{\mu}m$, which allows for the cell to have a practical cell gap of larger than $3{\mu}m$ when manufacturing. A reflectance of the dark state is only 0.114% for an incident light 550nm. At this condition, the light efficiency of white state reaches 92.7%. Further, we have studied a new reflective display with polarizer, optical compensation with half plate, LC plus reflector. The display with optimized cell parameters shows low wavelength dispersion and the contrast ratio greater than 5 over exists about $120^{\circ}$ in vertical direction and $160^{\circ}$ in horizontal direction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1043-1046
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• 2003

We investigated the EO performances of the UV aligned twisted nematic liquid crystal display (TN-LCD) with the UV exposure on a-C:H thin film surface. LC alignment using UV exposure on the a-C:H thin film surface was achieved. Monodomain alignment of the UV aligned TN-LCD can be observed. An good EO characteristics of the UV aligned TN-LCD was observed with oblique ion beam exposure on the a-C:H thin film surface. Therefore, the EO property of the UV-aligned TN-LCD with UV exposure on the a-C:H thin film surface is almost the same as that of the rubbing-aligned TN-LCD on a polyimide (PI) surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.172-172
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• 2010

The Patterned vertical alignment (PVA) mode has many advantages such as perfect dark state at the normal direction and wide viewing angle. However, PVA mode needs additional process to pattern electrodes of both substrates and complicated assembly process. Moreover, this mode shows slow response time. To overcome these problems, we use plane shape ITO on top substrate instead of patterned electrode and form proper tilt angle of LC director on the surface while maintaining these original merits. Consequently, we achieve fast response time and improve transmittance.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.22-24
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• 2005

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about $87{\circ}$ of stable pretilt angle was achieved at the range from $30{\circ}$ to $45{\circ}$ of incident angle. The good LC alignment is maintained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to $300{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.569-572
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• 2003

전력선 통신용 LC 공진필터에 사용되는 Ni-Zn 페라이트를 제조하기 위해 Ni0.8Zn0.2Fe2O4를 기본조성으로 선택하고 x (Co mol 비)를 변화시켜 전자기적 특성을 조사하였다. $Bi_2O_3$ CaO가 첨가됨으로써 균일한 입자성장과 입계에 고저항층이 형성되어 주파수 손실이 감소하였으며, $Ni_{0.8-x}Zn_{0.2}Co_xFe_2O_{\delta}$의 기본조성에 Co의 함량을 증가시키면 x = 0.05에서 투자율 75, 공진주파수 20 MHz의 특성을 나타내고 결정 입자 크기와 같은 구조적 특성에는 영향을 거의 미치지 않지만 자기이방성 변화에 따라 전자기적 특성에는 영향을 미친다. 또한, $Ni_{0.75}Zn_{0.2}Co_{0.05}Fe_2O_{4.017}$ 조성의 페라이트 코어의 발열량은 큐리온도 이하에서 일어난다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.289-290
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• 2005

We have investigated the electro-optical (EO) performances of the flexible liquid crystal display (LCD) on twisted nematic (TN) mode according to variation of cell gap in comparison with glass LCD. There were four kinds of cells which were having cell gaps of 3$\mu$m, 4$\mu$m and 5$\mu$m, especially the lowest 2$\mu$m on flexible and glass substrates separately. The EO performances of the flexible cells on the rubbed potyimide (PI) were almost the same those of glass cells. The response time of flexible cells was shorter than that of glass cells but the alignment of liquid crystal (LC) of flexible cells was weaker than that of glass cells. The residual DC of flexible cells was on the increase like that of glass cells in compliance with lowering cell gap.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.1033-1037
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• 2005

We have studied on the effect of the operation voltage according to the reverse twist for the different fringe field switching (FFS) structure. The FFS structure with a vertically patterned edge of the pixel electrode (VPP) has lower operation voltage comparing to the one with a horizontally patterned edge of the pixel electrode (HPP). The reason is like that the number of the pattern of the pixel edge for the VPP structure is one third comparing with the HPP structure and thus, there is small reverse twist area for the VPP structure. Actually, the reverse twist disturbs the twist of LC near adjacent active area, result that LCs near there have the unstable dynamics. That is, the operation voltage increases as the reverse twist area increases. Therefore, it is very important to design pixel electrode with a small reverse twist region for the FFS mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.55-58
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• 2001

In this paper, we present the results of the design and fabrication of the VCO(Voltage controlled Oscillator) using RF circuit simulator GENESYS and electromagnetic field simulator EMpower Frequency range is fabricated VCO is 850 MHz ~ 950 MHz, which is used Colpitts Circuit. the fabricated VCO is consisted of resonator, oscillator and MSL(Microstrip Line) is used in LC tuning circuit.(operated by negative feedback) MSL(Microstrip Line), Varactor(Plastic package), low noise TR(SOT-23), chip inductor(1608), chip capacitor(1005), chip resistance(1005). 1005 type is used for sample fabrication of VCO. In the fabrication process, circuit pattern is screen printed on the alumina substrates of over 99.9% purity. Center frequency of the sample VCO is 850MHz at $V_T=1.5V$, while the simulated value was 1.0GHz at $V_T=1.5V$. Variable frequency range of the sample is 860~950MHz in contrast to the 1068~1100MHz of the simulated values.