• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.184-189
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• 2002

The electrical and optical properties of $(Pb_{0.91}La_{0.09})(Zr_{0.65}Ti_{0.35})O_3$(PLZT) thin films by MOCVD using ultrasonic spraying were investigated. To compensate the Pb loss by evaporation, 5 and 10 wt% of excess Pb was added to 0.2 M precursor. After deposition of films on ITO-coated glasses in oxygen atmosphere for 30 min, films were heated by in-situ RTA (rapid thermal annealing) method. When the films were heat treated at $600^{\circ}C$, perovskite single phase was obtained. The optical property of the film with 10 wt% excess Pb was excellent showing about 84 % of transmittance near 520 nm. The dielectric constant of the film was about 308 and the leakage current of the film was lower than the Pb excess 0, 5 wt% PLZT thin films.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.21-26
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• 2005

The field effect transistors (FETs) were fabricated ell $Y_2O_3/Si(100)$ substrates by the conventional memory processes and sol-gel process using $(Bi,La)Ti_3O_{12}(BLT)$ ferroelectric gate materials. The remnant polarization ($2Pr = Pr^+-Pr^-$) int Pt/BLT/Pt/Si capacitors increased from $22 {\mu}C/cm^2$ to $30{\mu}C/ cm^2$ at 5V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. There was no drastic degradation in the polarization values after applying the retention read pulse for $10^{5.5}$ seconds. The capacitance-voltage data of $Pt/BLT/Y_2O_3/Si$ capacitors at 5V input voltage showed that the memory window voltage decreased from 1.4V to 0.6V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. The leakage current of the $Pt/BLT/Y_2O_3/Si$ capacitors annealed at $750^{\circ}C$ was about $510^{-8}A/cm^2$ at 5V. From the drain currents versus gate voltages ($V_G$) for $Pt/BLT/Y_2O_3/Si(100)$ FET devices, the memory window voltages increased from 0.3V to 0.8V with increasing tile $V_G$ from 3V to 5V.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.865-868
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• 2005

We fabricated the $Pb_{0.72}La_{0.28}TiO_3 (PLT(28))$ thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of 100% perovskite phase by drying at 350$^{\circ}C$ after each coating and final annealing at 650$^{\circ}C$. Electrical properties of PLT(28) thin film were measured through formation on the Pt/Ti/SiO$_2$/Si substrate and its dielectric constant and leakage current density were measured as 936 and 1.1${\mu}$A/cm$^2$, respectively

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.851-856
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• 2003

We have investigated the material and electrical properties of $Bi_{4-x}La_xTi_3O_{12}$ (BLT) ferroelectric thin film for ferroelectric nonvolatile memory applications of capacitor type and single transistor type. The 120nm thick BLT films were deposited on $Pt/Ti/SiO_2/Si$ and $SiO_2/Nitride/SiO_2$ (ONO) substrates by the sol-gel spin coating method and were annealed at $700^{\circ}C$. It was observed that the crystallographic orientation of BLT thin films were strongly affected by the excess Bi content and the intermediate rapid thermal annealing (RTA) treatment conditions regardeless of two type substrates. However, the surface microstructure and roughness of BLT films showed dependence of two different type substrates with orientation of (111) plane and amorphous phase. As increase excess Bi content, the crystallographic orientation of the BLT films varied drastically in BLT films and exhibited well-crystallized phase. Also, the conversion of crystallographic orientation at intermediate RTA temperature of above $450^{\circ}C$ started to be observed in BLT thin films with above excess 6.5% Bi content and the rms roughness of films is decreased. We found that the electrical properties of BLT films such as the P-V hysteresis loop and leakage current were effectively modulated by the crystallographic orientations change of thin films.

• Journal of Sensor Science and Technology
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• v.23 no.4
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• pp.224-228
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• 2014

The electrocaloric effect of 9/65/35 PLZT thin film fabricated by the sol-gel method, which has not been studied yet, was investigated for its structural, electrical properties as well as temperature change property. The relaxor ferroelectric property of 9/65/35 PLZT thin film was confirmed by examining its dielectric and electrical properties. The relaxor property can cause a more pronounced electrocaloric effect (ECE) in a wider temperature range than normal ferroelectric film. To avoid errors caused by using an indirect measurement method, the leakage current generated by increasing temperatures was minimized by using the optimal maximum electric field ($350kVcm^{-1}$) in the thin film. The largest temperature change ${\delta}T$ (0.23 K) and the electrocaloric strength ${\xi}$ (0.68 mkcm/kV), calculated by equations were obtained. The maximum field change ${\delta}E$ ($191kVcm^{-1}$) was in the vicinity of the curie temperature ($200^{\circ}C$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.305-309
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• 2002

We have successfully fabricated a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure using Bi$\sub$4-x/La$\sub$x/Ti$_3$O$\sub$12/ (BLT) ferroelectric thin film and SiO$_2$/Nitride/SiO$_2$ (ONO) stacked buffer layers for single transistor type ferroelectric nonvolatile memory applications. BLT films were deposited on 15 nm-thick ONO buffer layer by sol-gel spin-coating. The dielectric constant and the leakage current density of prepared ONO film were measured to be 5.6 and 1.0 x 10$\^$-8/ A/$\textrm{cm}^2$ at 2MV/cm, respectively, It was interesting to note that the crystallographic orientations of BLT thin films were strongly effected by pre-bake temperatures. X-ray diffraction patterns showed that (117) crystallites were mainly detected in the BLT film if pre-baked below 400$^{\circ}C$. Whereas, for the films pre-baked above 500$^{\circ}C$, the crystallites with preferred c-axis orientation were mainly detected. From the C-V measurement of the MFIS capacitor with c-axis oriented BLT films, the memory window of 0.6 V was obtained at a voltage sweep of ${\pm}$8 V, which evidently reflects the ferroelectric memory effect of a BLT/ONO/Si structure.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.78-85
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• 1995

We fabricated the Pb$_{1-0.28{\alpha}}La_{0.28}TiO_{3}$ (PLT(28)) thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of 100% perovskite phase by drying at 350$^{\circ}C$ after each coating and final annealing at 650$^{\circ}C$. Its electrical properties were measured from the planar capacitors fabricated on the Pt/Ti/SiO$_{2}$/Si substrate. By the P-E hysteresis measurement, its paraelectric phase was identified and its dielectric constant and leakage current density were measured as 936 and 1.1${\mu}A/cm^{2}$, respectively. Those electrical values indicate that the PLT(28) thin film is the most successful candidate for the capacitor dielectrics of ULSI DRAMs at the present.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1694-1697
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• 2002

KEPCO is planing to adopt a preventive diagnostic system to obtain the reliability of transformer and GIS in 765kV substation. KEPRI has developed the preventive diagnostic system for 765kV substation since 1997. We used various sensors and fault detecting devices such as a dissolved gas analyzer in oil, a ultrasonic detector and LA leakage current detector, etc., and carried out adaptation tests at the both a laboratory and a site. We developed a data acquisition system, a communication control unit and a server system as well. Furthermore, monitoring program and diagnostic expert system were also developed. This paper describes the preventive diagnostic system for 765kV Sin-Ga-Pyong and Sin-Tae-Baek substations which will be operated from 2004.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.43-46
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• 2002

Ferroelectric Mg-doped SBT and Ti-doped SBT were successfully deposited on Pt/Ti/$SiO_2/Si$ substrate by using a sol-gel solution coating method. The solutions were prepared through out adding the metal alkoxide solutions to SBT solution. The typical hysteresis loop of the films was obtained at 5V. The measured $2P_r$ value were $16.50{\mu}C/cm^2$ for SBT, $18.98{\mu}C/cm^2$ and for Mg-doped SBT, and $17.10{\mu}C/cm^2$ for Ti-doped SBT at an applied voltage of 5V, respectively. And it is found that the leakage current densities are less than $10^{-7}A/cm^2$ when applied voltage is less than 10.8MV/cm, which indicates the excellent insulating characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.29-34
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• 2009

PLZT thin films were deposited on platinized silicon (Pt/$TiSiO_2$/Si) substrate by RF magnetron sputtering. A $TiO_2$ buffer layer was fabricated, prior to deposition of PLZT films. the layer was strongly affected the crystallographic orientation of the PLZT films. X-ray diffraction was performed on the films to study the crystallization of the films as various substrate temperatures (Ts). According to increasing Ts, preferred orientation of films was changed (110) plane to (111) plane. The ferroelectric, dielectric and electrical properties of the films were also investigated in detail as increased substrate temperatures. The PLZT films deposited at $400^{\circ}C$ showed good ferroelectric properties with the remnant polarization of $15.8{\mu}C/cm^2$ and leakage current of $5.4{\times}10^{-9}\;A/cm^2$.