• 한국재료학회지
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• 제27권10호
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• pp.530-533
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• 2017

ZnO micro/nanocrystals with different morphologies were synthesized by thermal evaporation of various zinc source materials in an air atmosphere. Zinc acetate, zinc carbonate and zinc iodide were used as the source materials. No catalysts or substrates were used in the synthesis of the ZnO crystals. The scanning electron microscope(SEM) image showed that the morphology of ZnO crystals was strongly dependent on the source materials, which suggests that source material is one of the key factors in controlling the morphology of the obtained ZnO crystals. Tetrapods, nanogranular shaped crystals, spherical particles and crayon-shaped crystals were obtained using different source materials. The X-ray diffraction(XRD) pattern revealed that the all the ZnO crystals had hexagonal wurtzite crystalline structures. An ultraviolet emission was observed in the cathodoluminescence spectrum of the ZnO crystals prepared via thermal evaporation of Zn powder. However, a strong green emission centered at around 500 nm was observed in the cathodoluminescence spectra of the ZnO crystals prepared using zinc salts as the source materials.

• 대한금속재료학회지
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• 제46권1호
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• pp.39-43
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• 2008

PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of $3 {\times}10^{17}atoms/cm^2$ in implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with $2,000{\AA}$ $Si_3N_4 $ by PECVD. Cross-sectional TEM showed that continuous $500{\AA}$ thick buried oxide layer was formed with $300{\AA}$ thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.

• 한국표면공학회지
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• 제44권4호
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• pp.155-164
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• 2011

Electron beam evaporation source is widely used to prepare thin films by physical vapor deposition because it is very effective to vaporize materials and there is virtually no limit to vaporize materials including metals and compounds such as oxide. In this study, evaporation characteristics of various metals and compounds from an electron beam evaporation source have been studied. The 180 degree deflection type electron beam evaporation source which has 6-hearth crucibles and is capable of inputting power up to 10 kW was employed for evaporation experiment. 36 materials including metals, oxides and fluorides have been tested and described in terms of optimum crucible liner, evaporation state, stability, and so on. Various crucible liners have been tried to find out the most effective way to vaporize materials. Two types of crucible liners have been employed in this experiment. One is contact type liner, and the other is non-contact type one. It has been tried to give the objective information and the most effective evaporation method on the evaporation of materials from the electron beam evaporation source. It is concluded that the electron beam evaporation source can be used to prepare good quality films by choosing the appropriate crucible liner.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2008년도 High Temperature Superconductivity Vol.XVIII
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• pp.69-69
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• 2008

• 방사성폐기물학회지
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• 제21권2호
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• pp.193-204
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• 2023

To ensure radiological safety margin in the transport and storage of spent nuclear fuel, it is crucial to perform source term and shielding analyses in advance from the perspective of conservation. When performing source term analysis on UO₂ fuel, which is mostly used in commercial nuclear power plants, uranium and oxygen are basically considered to be the initial materials of the new fuel. However, the presence of impurities in the fuel and structural materials of the fuel assembly may influence the source term and shielding analyses. The impurities could be radioactive materials or the stable materials that are activated by irradiation during reactor power operation. As measuring the impurity concentration levels in the fuel and structural materials can be challenging, publicly available information on impurity concentration levels is used as a reference in this evaluation. To assess the effect of impurities, the results of the source term and shielding analyses were compared depending on whether the assumed impurity concentration is considered. For the shielding analysis, generic cask design data developed by KEPCO-E&C was utilized.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.223-226
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• 2004

MgO thin films were deposited bye-beam evaporation on $SiO_2$/Si wafers for the application of a protective layer in alternating current plasma display panels (AC-PDPs). Three different MgO sources, single crystal, melted polycrystal and sintered polycrystal, were used to find out the change of the properties of MgO protective layer depending on the source type. The properties of MgO thin films such as density, orientation and surface morphology were influenced by the source type. MgO thin films deposited with the melted polycrystal source had the highest density with the highest (100) preferred orientation, whereas the films deposited with the sintered polycrystal source had the lowest density with less preferred orientation. Such a result seems to be originated from the different mobility of adatoms on the surface of the deposited MgO thin films. Different microstructures of MgO thin films deposited even in the same deposition condition were observed depending on the MgO source type, resulting in different discharge characteristics.

• 한국재료학회지
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• 제28권10호
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• pp.590-594
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• 2018

ZnO micro/nanocrystals are formed by a vapor transport method. Mixtures of ZnO and TiO powders are used as the source materials. The TiO powder acts as a reducing agent to reduce the ZnO to Zn and plays an important role in the formation of ZnO micro/nanocrystals. The vapor transport process is carried out in air at atmospheric pressure. When the weight ratios of TiO to ZnO in the source material are lower than 1:2, no ZnO micro/nanocrystals are formed. However, when the ratios of TiO to ZnO in the source material are greater than 1:1, the ZnO crystals with one-dimensional wire morphology are formed. In the room temperature cathodoluminescence spectra of all the products, a strong ultraviolet emission centered at 380 nm is observed. As the ratio of TiO to ZnO in the source material increases from 1:2 to 1:1, the intensity ratio of ultraviolet to visible emission increases, suggesting that the crystallinity of the ZnO crystals is improved. Only the ultraviolet emission is observed for the ZnO crystals prepared using the source material with a TiO/ZnO ratio of 2:1.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.128-128
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• 2012

Korea institute of materials science (KIMS) has researched an anode layer linear ion source (ALIS) for various roll-to-roll treatment processes. The ALIS can be used to Ar ion beam (1~2 keV) treatment, and diamond-like carbon coating and so on. The treatment width of ALIS is 500 mm with a uniformity below 5 % (=(Max-min)/(Max+min)). We also demonstrate the status of development of ALIS in a roll-to-roll industry.

• 비파괴검사학회지
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• 제21권3호
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• pp.277-280
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• 2001

General source location method that use an arrival time differences among sensors is restricted to the composite material and the complex-shaped material. In this study, a bundle-type acoustic sensor composed of 6 pinducers was utilized to determine wave propagation direction and then to estimate source location of the unidirectional GFRP. For the purpose of the study, slowness curve for the material was obtained and made an assumption that the incident waves on pinducers are propagated as a plane wave. According to the results, measured propagation directions of the wave were coincide with theoretical background, however, it was a hassle to determine the source location exactly. But, it is expected that bundle-type sensor gives more accurate results for zone location than generally used acoustic sensors.

• 한국재료학회지
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• 제21권1호
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• pp.56-66
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• 2011

Multi-source evaporation is one of the methods to improve the thickness uniformity of thin films deposited by evaporation. In this study, a simulator for the relative thickness profile of a thin film deposited by a multi-source evaporation system was developed. Using this simulator, the relative thickness profiles of the evaporated thin films were simulated under various conditions, such as the number and arrangements of sources and source-to-substrate distance. The optimum conditions, in which the thickness uniformity is minimized, and the corresponding efficiency, were obtained. The substrate was a 5th generation substrate (dimensions of 1300 mm ${\times}$ 1100 mm). The number of sources and source-to-substrate distance were varied from 1 to 6 and 0 to the length of the major axis of the substrate (1300 mm), respectively. When the source plane, the area on which sources can be located, is limited to the substrate dimension, the minimum thickness uniformity, obtained when the number of sources is 6, was 3.3%; the corresponding efficiency was 16.6%. When the dimension of the source plane is enlarged two times, the thickness uniformity is remarkably improved while the efficiency is decreased. The minimum thickness uniformity, obtained when the number of sources is 6, was 0.5%; the corresponding efficiency was decreased to 9.1%. The expansion of the source plane brings about not only the improvement of the thickness uniformity, but also a decrement of the efficiency and an enlargement of equipment.