• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.1
• /
• pp.33-37
• /
• 2008

A noticeable amount of Kirkendall voids formed at the Sn-3.5Ag solder joint with electroplated Cu, and that became even more significant when an additive was added to Cu electroplating bath. With SPS, a large amount of voids formed at the $Cu/Cu_3Sn$ interface of the solder joint during thermal aging at $150^{\circ}C$. The in-situ AES analysis of fractured joints revealed S segregation on the void surface. Only Cu, Sn, and S peaks were detected at the fractured $Cu/Cu_3Sn$ interfaces, and the S peak decreased rapidly with AES depth profiling. The segregation of S at the $Cu/Cu_3Sn$ interface lowered interface energy and thereby reduced the free energy barrier for the Kirkendall void nucleation. The drop impact test revealed that the electrodeposited Cu film with SPS degraded drastically with aging time. Fracture occurred at the $Cu/Cu_3Sn$ interface where a lot of voids existed. Therefore, voids occupied at the $Cu/Cu_3Sn$ interface are shown to seriously degrade drop reliability of solder joints.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2012.10a
• /
• pp.473-474
• /
• 2012

• Journal of the Microelectronics and Packaging Society
• /
• v.31 no.1
• /
• pp.35-42
• /
• 2024

Recently, with the miniaturization and high integration of semiconductor chips, the bump bridge phenomenon caused by fine pitches is drawing attention as a problem. Accordingly, Cu pillar bump, which can minimize the bump bridge phenomenon, is widely applied in the semiconductor package industry for fine pitch applications. When exposed to a high-temperature environment, the thickness of the intermetallic compound (IMC) formed at the joint interface increases, and at the same time, Kirkendall void is formed and grown inside some IMC/Cu and IMC interfaces. Therefore, it is important to control the excessive growth of IMC and the formation and growth of Kirkendall voids because they weaken the mechanical reliability of the joints. Therefore, in this study, isothermal aging evaluation of Cu pillar bump joints with a CS (Cu+ Sn-1.8Ag Solder) structure was performed and the corresponding results was reported.

• Corrosion Science and Technology
• /
• v.16 no.1
• /
• pp.15-22
• /
• 2017

An oxidation-reduction scheme is an alternative approach for improving the galvanizability of advanced high-strength steel in the continuous hot-dip galvanizing process. Here, we investigated the effect of oxygen partial pressure ($P_{O_2}$) on the oxidation behavior of a transformation-induced plasticity steel containing 1.5 wt% Si and 1.6 wt% Mn during heating to and holding for 60 s at $700^{\circ}C$ under atmospheres with various $P_{O_2}$ values. Irrespective of $P_{O_2}$, a thin amorphous Si-rich layer of Si-Mn-O was formed underneath the Fe oxide scale (a $Fe_2O_3/Fe_3O_4$ bilayer) in the heating stage. In contrast to Si, Mn tended to segregate at the scale surface as $(Fe,Mn)_2O_3$. The multilayered structure of $(Fe,Mn)_2O_3/Fe_2O_3/Fe_3O_4$/amorphous Si-Mn-O remained even after extended oxidizing at $700^{\circ}C$ for 60 s. $Fe_2O_3$ was the dominantly growing oxide phase in the scale. The enhanced growth rate of $Fe_2O_3$ with increasing $P_{O_2}$ resulted in the formation of more Kirkendall voids in the amorphous Si-rich layer and a less Mn segregation at the scale surface. The mechanisms underlying the absence of FeO and the formation of Kirkendall voids are discussed.

• Journal of Advanced Marine Engineering and Technology
• /
• v.27 no.1
• /
• pp.134-144
• /
• 2003

Reactive diffusion couples between Fe-5.8at.%Si and (Si wafer, $FeSi_2$, or FeSi alloy) were heat-treated at 1423k. The only layer of $Fe_3Si$ phase was formed in each diffusion couple. The width of $Fe_3Si$ layer was proportional to square root of diffusion time in each kind of diffusion couple. Growth rate of $Fe_3Si$ layer was relied on the concentration of Si in the supplied source of Si atoms. Interdiffusion coefficient of $Fe_3Si$ has been determined from the derived relation between growth rate constant and interdiffusion coefficient in this work. It was shown that the behavior of Kirkendall's void in $Fe_3Si$ layer was not affected by the kind of Si source. But solid solution $\alpha$ was formed in the diffusion couple between Fe-5.8 at.%Si and $Fe_3Si$ alloy. Kirkendall's voids in diffusional $\alpha$ were neglectively smaller than the case of $Fe_3Si$ phase growth.

• Korean Journal of Materials Research
• /
• v.11 no.1
• /
• pp.34-38
• /
• 2001

Intermetallics of Fe-28%Al($Fe_3Al$) and Fe-28%Al-4%Cr($Fe_3Al-4Cr$) were oxidized at 1073, 1273 and 1473k in air for up to 17 days. The oxidation resistance of$Fe_3Al-4Cr$ was basically similar to or better than that of $Fe_3Al$. The oxide scales formed on $Fe_3Al$ consisted essentially of pure ${\alpha}-AL_2O_3$, while those formed on $Fe_3Al-4Cr$ consisted of ${\alpha}-AL_2O_3$ having dissolved iron and chromium ions. The preferential outward diffusion of substrate elements to form the outer oxide layer led to the formation of Kirkendall voids at the oxide-matrix interface. The scales formed on $Fe_3Al(-4Cr)$ were thin and dense up to 1273K, but they spalled easily at 1473K, accompanied by more weight gains.

• Korean Journal of Materials Research
• /
• v.18 no.1
• /
• pp.45-50
• /
• 2008

Microstructural evolution and the intermetallic compound (IMC) growth kinetics in an Au stud bump were studied via isothermal aging at 120, 150, and $180^{\circ}C$ for 300hrs. The $AlAu_4$ phase was observed in an Al pad/Au stud interface, and its thickness was kept constant during the aging treatment. AuSn, $AuSn_2,\;and\;AuSn_4$ phases formed at interface between the Au stud and Sn. $AuSn_2,\;AuSn_2/AuSn_4$, and AuSn phases dominantly grew as the aging time increased at $120^{\circ}C,\;150^{\circ}C,\;and\;180^{\circ}C$, respectively, while $(Au,Cu)_6Sn_5/Cu_3Sn$ phases formed at Sn/Cu interface with a negligible growth rate. Kirkendall voids formed at $AlAu_4/Au$, Au/Au-Sn IMC, and $Cu_3Sn/Cu$ interfaces and propagated continuously as the time increased. The apparent activation energy for the overall growth of the Au-Sn IMC was estimated to be 1.04 eV.

• 연구논문집
• /
• s.27
• /
• pp.201-208
• /
• 1997

To improve the joining characteristics of metallic converter substrate for exhaust gas cleaning, high temperature brazing process has been studied. In this study, the effect of chemical composition of brazing filler metal on the oxidation behavior of brazed joints was investigated closely. Brazing was carried out at $1200^\circC$ in vacuum furnace using nickel-based filler metals : BNi-5 powder(Ni-Cr-Si base alloy) and MBF-50 foil(Ni-Cr-Si-B). The MBF-50 containing 1-1.5 wt%B showed relatively poor oxidation resistance of the brazed joints compared to BNi-5, because of the faster invasion of oxygen through the Kirkendal voids along the interface of mother alloy/filler metal.

• The Korean Journal of Ceramics
• /
• v.5 no.1
• /
• pp.44-49
• /
• 1999

In order to improve the oxidation resistance of $Ti_3Al$, Ti-25at.%Al composites containing dispersed particles of 15wt.%SiC were prepared by a tubular mixing-spark plasma sintering method. The sintered composites had $Ti_3Al$, SiC, $Ti_5Si_3$ and TiC. The presence of $Ti_5Si_3$ and TiC indicates that some of SiC particles reacted with Ti to from more stable phases. From oxidation tests at 800, 900 and $1000^{\circ}C$ under 1 atm of pure oxygen, it was found that the oxidation rate of Ti3Al was effectively reduced by the addition of SiC. The scale was primarily composed of an outer $TiO_2$ layer having some $Al_2O_3 $islands, an intermediate relatively thick $Al_2O_3 $ layer, and an inner $TiO_2+Al_2O_3+SiO_2$ mixed layer. Beneath the scale, Kirkendall voids were seen.

• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.2
• /
• pp.37-45
• /
• 2008

In this study, reliabilities of Cu (60 um)/SnAg (20 um) double-bump flip chip assemblies were investigated for the flip chip interconnections on organic substrates with 100 um pitch. After multiple reflows at $250^{\circ}C\;and\;280^{\circ}C$, bump contact resistances were almost same regardless of number of reflows and reflow temperature. In the high temperature storage test, there was no bump contact resistance change at $125^{\circ}C$ up to 2000 hours. However, bump contact resistances slightly increased at $150^{\circ}C$ due to Kirkendall voids formation. In the electromigration test, Cu/SnAg double-bump flip chip assemblies showed no electromigration until about 600 hours due to reduced local current density. Finally, in the thermal cycling test, thermal cycling failure mainly occurred at Si chip/Cu column interface which was found out the highest stress concentration site in the finite element analysis. As a result, Al pad was displaced out under thermal cycling. This failure mode was caused by normal compressive strain acting Cu column bumps along perpendicular direction of a Si chip.