• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1083-1088
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• 2003

Molecular dynamics simulations on the deformation behavior of single-walled carbon nanotube are performed. Formation energies of CNT's by interatomic potentials are computed and compared with ab initio results. Bending and axial compression are applied under lattice statics and NVT ensemble conditions. Specifically, we focus on the mechanism of kink formation in bending. The simulation results are comprehensively explained in the framework of atomistic energetics. The effects of temperature and chirality on the deformation of carbon nanotube are also studied.

• Journal of the Semiconductor & Display Technology
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• v.14 no.2
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• pp.41-45
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• 2015

From 20nm technology node, the finFET has become standard device for ULSI's. However, the finFET process made stacking gate non-volatile memory obsolete. Some reported capacitor-less DRAM structure by utilizing the FBE. We present possible non-volatile memory device structure similar to the dual gate MOSFET. One of the gates is left floating. Since body of the finFET is only 40nm thick, control gate bias can make electron tunneling through the floating gate oxide which sits across the body. For programming, gate is biased to accumulation mode with few volts. Simulation results show that the programming electron current flows at the interface between floating gate oxide and the body. It also shows that the magnitude of the programming current can be easily controlled by the drain voltage. Injected electrons at the floating gate act similar to the body bias which changes the threshold voltage of the device.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.126-132
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• 1995

The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

• Journal of ILASS-Korea
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• v.9 no.2
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• pp.41-49
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• 2004

Liquid breakup under the variation of AC frequency has been studied experimentally in the electrohydrodynamic atomization. The effect of parameters such as charging voltage, flow rate, nozzle tip inner diameter and power frequency have been considered. This work was performed to investigate the experimental analysis for the effect of AC frequency on breakup process, the mapping of occurrence of disintegration region, and the relationship between the applied power and the droplet radius. The experimental results show that the increase of applied voltage in a certain frequency band leads to a reduction in the droplet size within the limits from 50Hz to 400Hz. The transition phenomena from dripping mode to spindle mode were observed under the band of sudden fall of droplet radius changing ratio, and the synchronous region were produced within the range of applied voltage from 5kV to 6kV.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1142-1143
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• 2006

Kinik Company pioneered diamond pad conditioners protected by DLC barrier ($DiaShield^{(R)}$ Coating) back in 1999 (Sung & Lin, US Patent 6,368,198). Kink also evaluated Cermet Composite Coating (CCC or $C^3$, patent pending) with a composition that grades from a metallic (e.g. stainless steel) interlayer to a ceramic (e.g. $Al_2O_3$ or SiC) exterior. The metallic interlayer can form metallurgical bond with metallic matrix on the diamond pad conditioner. The ceramic exterior is both wear and corrosion resistant. The gradational design of $C^3$ coating will assure its strong adherence to the substrate because there is no weak boundary between coating and substrate.

• Bulletin of the Korean Space Science Society
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• 2009.10a
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• pp.43.4-44
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• 2009

electron, ion, heavy ion으로 구성 된 plasma에서 hump type과 kink type(double layer)의 electrostatic solitary waves이 존재할 수 있다는 것을 pseudopotential method를 이용한 결과와 1d PIC(Particle-In-Cell) simulation method의 결과에서 각각 확인하였다. 1d PIC simulation에서 초기에 각각의 입자 종(species; electron, ion, heavy ion)의 밀도섭동(density perturbation)은 Gaussian 형태로 주었으며, 각각의 입자들의 drift velocity는 각각의 plasma 입자 종들의 thermal velocity로 나란한 방향으로 주었다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.89-95
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• 1996

In this ppaer, temeprature dependent transport and heat transport models have been incorperated to the two dimensional device simulator SNU-2D provides a solid bse for nonisothermal device simulation. As an example to study the nonisothermal problem. we consider SOI MOSFET's I-V characteristics have been simulated and compared with the measurements. It is shown that negative slopes in the Ids-Vds characteristics are casused by the temperature dependence of the saturation velocity and the degradation of the temperature dependence mobility. Also it is shown that the kink effect occurs when impact ionization near the drain produces a buildup of holes in this isolated device island, and the hysteresis is caused by the creation of holes in the channel and their flow to the source.

• Advanced Composite Materials
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• v.18 no.3
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• pp.251-264
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• 2009

Nonlinear mechanical behaviors of unidirectional carbon fiber-reinforced plastic (CFRP) laminates using cup-stacked carbon nanotubes (CSCNTs) dispersed epoxy are evaluated and compared with those of CFRP laminates without CSCNTs. Off-axis compression tests are performed to obtain the stress-strain relations. One-parameter plasticity model is applied to characterize the nonlinear response of unidirectional laminates, and nonlinear behaviors of laminates with and without CSCNTs are compared. Clear improvement in stiffness of off-axis specimens by using CSCNTs is demonstrated, which is considered to contribute the enhancement of the longitudinal compressive strength of unidirectional laminates and compressive strength of multidirectional laminates. Finally, longitudinal compressive strengths are predicted based on a kink band model including the nonlinear responses in order to demonstrate the improvement in longitudinal strength of CFRP by dispersing CSCNTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.26-29
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• 1999

The I-V characteristics of the n-channel offset gated poly-Si TETs have been systematically investigated in order to analyse the effects of offset region. The on currents are reduced due to the series resistance by the offset length and there is no kink phenomenon in offset devices. The off currents of the offset gated TFTs are remarkably reduced to 10$^{-12}$ A independent of gate and drain voltage because the electric field is weakened by the increase of the depletion region width near the drain region. It is shown that the offset regions behave as a series resistance and reduce lateral and vertical electric field.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.53-58
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• 1998

A buried channel poly-Si TFT (BCTFT) for application of high performance integrated circuits has been proposed and fabricated. BCTFT has unique features, such as the moderately-doped buried channel and counter-doped body region for conductivity modulation, and the fourth terminal entitled back bias for preventing kink effect. The n-type and p-type BCTFT exhibits superior performance to conventional poly-Si TFT in ON-current and field effect mobility due to moderate doping at the buried channel. The OFF-state leakage current is not increased because the carrier drift is suppressed by the p-n junction depletion between the moderately-doped buried channel and the counter-doped body region.