• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.33 no.1
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• pp.45-52
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• 2001

Recycling of wastepaper is very important for the environmental protection. However inferior strength and slower drainage characteristic that are brought by the hornification and the increase of fines respectively limited the increase of wastepaper recycling. The purpose of this study is to obtain some fundamental information that is helpful to develop the technologies which can improve the characteristics of recycled fibers. Softwood bleached kraft pulp was curlated with Hobart mixer at several different consistency. The curlation of fibers can cause the internal fibrillation and decreasing the crystallinity without serious damage of fiber surface. Curl index, kink index, freeness and WRV were increased, but crystallinity was decreased with the increase of curlation consistency.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1038-1040
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• 2005

Linear kink effect (LKE) induced mainly by selfheating on the reliability of divided channel poly-Si TFTs has been studied. The LKE was enhanced for compact designed structure to achieve narrow bezel, which was explained by the difference in heat dissipation capability, thus self-heating immunity in TFT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.345-345
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• 2010

1T-DRAM cell with solid phase (SPC) crystallized poly-Si thin film transistor was fabricated and electrical characteristics were evaluated. The fabricated device showed kink effect by negative back bias. Kink current is due to the floating body effect and it can be used to memory operation. Current difference between "1" state and "0" state was defined and the memory properties can be improved by using gate induced drain leakage (GIDL) current.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.1018-1022
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• 2000

Enhancement of the accuracy of products and productivity are essential to survive in a global industrial competition. This trend requires tighter dimensional tolerance specifications. To actively cope with the rapid change of the workpiece material and cutter geometry, a general method that can predict and analyze the machined surface is needed. Surface generation model for the prediction of the topography of machined surfaces is developed based on cutting force model considering cutter deflection and runout. This paper presents the method that constructs the three-dimensional machined surface error following the movement of a cutter, irrespective of the variations of cutting conditions. In addition, the effects of the cutting forces and the kink shape on the machined surface are extensively investigated.

• ETRI Journal
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• v.17 no.4
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• pp.1-12
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• 1996

A novel body-tied silicon-on-insulator(SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such as kink phenomena on the drain current curves, single-transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current ($I_{DS}-V_{DS}$) curves, substrate resistance effect on the $I_{DS}-V_{DS}$ curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high-speed and low-voltage VLSI circuits.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.5
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• pp.54-59
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• 1995

We have proposed a novel self-aligned offset gated polysilicon TFTs device without an offset mask in order to reduce a leakage current and suppress a kink effect. The photolithographic process steps of the new TFTs device are identical to those of conventional non-offset structure TFTs and an additional mask to fabricate an offset structure is not required in our device due to the self-aligned process. The new device has demonstrated a lower leakage current and a better ON/OFF current ratio compared with the conventional non-offset device. The new TFT device also exhibits a considerable reduction of the kink effect because a very thin film TFT devices may be easily fabricated due to the elimination of contact over-etch problem.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.971-973
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• 1999

채널길이에 따른 n-채널과 p-채널 poly-Si TFT's를 제작하고 그 전기적 특성을 분석하였다. n-채널과 p-채널소자는 공통적으로 기생바이폴라트 랜지스터현상(parasitic bipolar transistor action)에 의한 kink 효과, 전하공유(charge sharing)에 의한 문턱전압의 감소, 소오스와 드레인 근처의 결함에 의한 RSCE(reverse short channel effect) 효과, 수직전계에 의한 이동도의 감소, 그리고 avalanche 증식에 의한 S-swing의 감소가 나타났다. n-채널은 p-채널 보다 더 큰 kink, 이동도, S-swing의 변화가 나타났으며, 높은 드레인 전압에서의 문턱전압의 이동은 avalanche 증식(multiplication)에 의한 것이 더 우세한 것으로 나타났다. 누설전류의 경우, 채널 길이가 짧아짐에 따라 n-채널은 큰 증가를 나타냈으나 p-채널의 경우는 변화가 나타나지 않았다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.293-293
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• 2005

The differences between floating and grounded body effects in polycrystalline silicon thin-film transistors (polysilicon TFTs) are investigated by making a body contact. The floating body effects such as kink effect, subthreshold slope change, and body current characteristics are explained and modeled by impact ionization, which causes source body turn on, and activates the parasitic bipolar junction transistors (BJTs). These effects become crucial for channel lengths of 4㎛ or shorter. Our data show that making a body contact reduces kink effects significantly and identifies impact ionization mechanism in polysilicon TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.342-344
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• 2005

We have simulated a symmetric dual-gate TFT which has triple floating n+ channel to improve the on-current of the dual-gate TFT. We achieved a low hole concentration at the source and channel junction causes the improvement the potential barrier so that we observed the reduction of the kink-effect. In this paper, we observed the reduction of the kink-effect compared with the conventional single-gate TFT and the improvement of the on-current compared with the conventional dual-gate TFT.

• The Bulletin of The Korean Astronomical Society
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• v.44 no.1
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• pp.83.2-83.2
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• 2019

We study the stability of the magnetic structure in active region (AR) 12371 producing an M6.5 flare on June 22 2015. We first perform a nonlinear force-free fields (NLFFFs) extrapolation to derive three-dimensional (3D) magnetic fields based on time series of observed photospheric magnetic fields. The NLFFFs well describe an observed sigmoidal structure with the shape of a double arc magnetic configuration. Next, we examine three possible instabilities (kink, torus, and double arc) to investigate how the M6.5 flare is triggered in the double arc loops. Consequently, the double arc loops are stable against kink and torus instabilities, but possibly unstable against the double arc instability before the flare occurrence. Finally, we discuss a probable scenario for the M6.5 flare.