• Title/Summary/Keyword: Junction depth

Search Result 184, Processing Time 0.028 seconds

PC1D 기반의 2스텝 도핑을 통한 실리콘 태양전지의 최적화

  • Kim, Yeong-Pil;Jeong, U-Won;Lee, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.11a
    • /
    • pp.256-256
    • /
    • 2009
  • This paper presents a proper condition to achieve above 17 % conversion efficiency using PC1D simulator. Crystalline silicon wafer with thickness of $240{\mu}m$ was used as a starting material. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer. Among the investigated variables, we learn that 2nd doping concentration as a key factor to achieve conversion efficiency higher than 17 %.

  • PDF

Characterization of step-edge dc SQUID magnetometer fabricated on sapphire substrate (사파이어 기판 위에 제작된 step-edge dc SQUID magnetometer의 특성)

  • 임해용;박종혁;정구락;한택상;김인선;박용기
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
    • /
    • 2002.02a
    • /
    • pp.127-130
    • /
    • 2002
  • Step-edge dc SQUID magnetometers have been fabricated on sapphire substrate. Ce$O_{2}$ buffer layer and $YBa_{2}$$Cu_{3}$ $O_{7}$(YBCO) films were deposited in-situ on the low angle (~$35^{\circ}$)steps formed on the substrates. Typical 5-$\mu$m-wide junction has $R_{N}$ of 4 $\Omega$ and $I_{c}$ of 60 $\mu$A with $I_{c}$$R_{N}$ product of 240 $\mu$V at 77 K. According to applied bias current, depth of voltage modulation was changed and maximum voltage was measured 100~300 fT/$\checkmark$ Hz at 100 Hz, and about 1.5 pT/$\checkmark$ Hz at 1 Hz. For ac bias reversal method, field noise was decreased in the 1/f region. The QRS peak of magneto-cardiogram was measured 50 pT in the magnetically shielded room.

  • PDF

Effects of denudation anneals on the electrical properties of ULSI devices. (Denudation 열처리가 ULSI device의 전기적 특성에 미치는 영향의 평가)

  • 조원주;이교성송영민
    • Proceedings of the IEEK Conference
    • /
    • 1998.10a
    • /
    • pp.565-568
    • /
    • 1998
  • The effects of denudation anneals on the properties of 256Mega-bit level devices were investigated. Based on the three-step anneal model, the redistribution of oxygen atom and the defect free zone depth were calculated. A significant outdiffusion of oxygen atoms is occurred during the denudation anneals at high temperature. Junction leakage current of P+/N-Well and N+/P-Well junctions, as a function of denudation anneal temperature, was decreased with increase of anneal temperature and is closely related with the behaviors of oxygen atoms. Also it is found that the denudation anneal at high temperature very effective for the fabrication of reliable 256Mega-bit level devices.

  • PDF

Construction of Diagnosis System for Electric-fire Causes using Fuzzy Possibility Measure (퍼지가능성 척도를 이용한 전기화재 원인진단 시스템의 구축)

  • 김두현;김상철
    • Journal of the Korean Society of Safety
    • /
    • v.7 no.4
    • /
    • pp.105-114
    • /
    • 1992
  • This paper presents an study on the knowledge based system for diagnosing the fire causes using the Fuzzy Possibility Measure( FPM ) about the electric-fire ignition. The Ignition values needed for causes diagnosis is computed as FPM for electric-fire ignition based on the internal scale technique that assigns numerically the characteristic difference of facts to the-tin-ear scale. For the convinience of inference, ignition sources are classified into seven types : short, ground fault, leakge of electricity, overcurrent, cord junction overheating, bad Insulation and spark. The system for causes diagnosis of electric-fire is composed of Knowledge Acquisition System, Inference Engine and Man-Machine Interface, The diagnosis system is wrritten in an artificial intelligence langusge “PROLOG” which uses depth-first search and backward chaining schemes in reasoning process.

  • PDF

Reverse recovery and other electrical properties of an electron-irradiated silicon $p^--n^-$ junction diode (전자 조사된 실리콘 $p^--n^-$ 접합 다이오드의 transient 거동)

  • 엄태종;강승모;박현아;김상진;김현우;이종무;조중렬;김계령
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2003.03a
    • /
    • pp.118-118
    • /
    • 2003
  • 전력반도체 소자로 사용되는 p$^{-}$-n$^{-}$ 접합 다이오드의 스위칭 속도를 향상시키고 그에 따른 에너지 손실을 감소시키기 위해 전자 조사를 실시하였다. Reverse recovery time이 현저히 감소한 반면, 전자 조사에 의한 누설전류와 on-state 전압 강하와 같은 그 외의 전기적 특성 저하는 무시할 수 있는 정도였다. 그밖에 시료의 deep level transient spectroscpy(DLTS) 분석 결과와 secondary ion mass spectrometry(SIMS) depth profile을 근거로 결함 분포와 전자조사 유도결함의 유형을 논하였다.

  • PDF

An Analysis on the Charge Distribution on the Spacer Using Dust Figure (Dust Figure를 이용한 스페이서상의 대전전하 분포해석)

  • Choi, Jae-Gu;Seo, Kil-Soo;Kim, Young-Bae;Kim, Ik-Soo
    • Proceedings of the KIEE Conference
    • /
    • 1998.07e
    • /
    • pp.1681-1683
    • /
    • 1998
  • Unlike AC, DC dielectric characteristics of the spacer are very influenced by the quantity and the distribution of surface charges. A general impression of the distribution of surface charges is obtained if electrostatic powders are sprinkled over the surface. The distribution of surface charge was investigated with dust figures. Mechanism of charge accumulation on the spacer of $SF_6$ GIS has been studied using various types of model spacers which have different depths. As a result, it was found that charge accumulation was dominantly influenced by the normal component of the electric field and the usage of embedded electrodes was an adequate method to lessen field concentration around the triple junction. The guide of the optimum depth of the spacer was proposed.

  • PDF

Depth-based Pig Detection at Wall-Floor Junction (깊이 정보를 이용한 벽과 바닥 경계에서의 돼지 탐지)

  • Kim, J.;Kim, J.;Choi, Y.;Chung, Y.;Park, D.;Kim, H.
    • Proceedings of the Korea Information Processing Society Conference
    • /
    • 2017.04a
    • /
    • pp.955-957
    • /
    • 2017
  • 감시 카메라 환경에서 돈사 내 돼지들을 탐지 및 추적에 관한 연구는 효율적인 돈사 관리측면에서 중요한 이슈로 떠오르고 있다. 그러나 깊이 정보 내 노이즈와 돈방 내 돼지와 배경의 깊이 정보 값이 유사하여 개별 돼지만을 탐지하기란 쉽지 않다. 특히 천장에 설치된 센서로부터 획득된 벽과 바닥 경계에 위치한 돼지를 탐지하기 위한 방법이 요구된다. 본 논문에서는 노이즈에 덜 민감한 바닥 배경을 이용하여 바닥에 위치한 돼지의 부분을 먼저 탐지한 후, 벽에 위치한 돼지의 나머지 부분을 수퍼픽셀과 영역확장 기법으로 탐지하는 방법을 제안한다. 실험 결과 돈방 내 벽과 바닥 경계에 위치한 돼지를 정확히 탐지하였으며, 영상 1장 당 수행시간이 5msec로 실시간 처리에 문제가 없음을 확인하였다.

Characterization of Channel Electric Field in LDD MOSFET (LDD MOSFET 채널 전계의 특성해석)

  • Park, Min-Hyoung;Han, Min-Koo
    • Proceedings of the KIEE Conference
    • /
    • 1988.11a
    • /
    • pp.363-367
    • /
    • 1988
  • A simple analytical model for the lateral channel electric field in gate - offset structured Lightly Doped Drain MOSFET has been developed. The model's results agree well with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field as function of drain and gate bias conditions and process, design parameters. Advantages of analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate / drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot - electron phenomena, individually. We are able to find the optimum doping concentration of LDD minimizing the peak electric field and hot - electron effects.

  • PDF

A Study on the Characteristics of PSA Bipolar Transistor with Thin Base Width of 1100 ${\AA}$ (1100 ${\AA}$의 베이스 폭을 갖는 다결정 실리콘 자기정렬 트랜지스터 특성 연구)

  • Koo, Yong-Seo;An, Chul
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.30A no.10
    • /
    • pp.41-50
    • /
    • 1993
  • This paper describes the fabrication process and electrical characteristics of PSA (Polysilicon Self-Align) bipolar transistors with a thin base width of 1100.angs.. To realize this shallow junction depth, one-step rapid thermal annealing(RTA) technology has been applied instead of conventional furnace annealing process. It has been shown that the series resistances and parasitic capacitances are significantly reduced in the device with emitter area of 1${\times}4{\mu}m^{2}$. The switching speed of 2.4ns/gate was obtained by measuring the minimum propagation delay time in the I$^{2}$L ring oscillator with 31 stages.

  • PDF

Analytical modeling for the short-channel MOSFET (Short-Channel MOSFET의 해석적 모델링)

  • 홍순석
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.17 no.11
    • /
    • pp.1290-1298
    • /
    • 1992
  • In this paper, the Poisson's equation is solved two-dimensionally without employing any fitting parameters, and the model formulation of a short-channel MOSFET is accomplished fully analytically. It automatically derives a very accurate drain current expression that can be used simultaneously for strong inversion, subthreshold, and saturation regions. Furthermore, this model gives a unified explanation for the short-channel effect, the body effect, the DIBL effect, and even the variation of the effective carrier mobility. The obtained expression of the threshold voltage also includes the dependence on the oxide thickness, the n+ junction depth, and temperature.

  • PDF