Effects of denudation anneals on the electrical properties of ULSI devices.

Denudation 열처리가 ULSI device의 전기적 특성에 미치는 영향의 평가

The effects of denudation anneals on the properties of 256Mega-bit level devices were investigated. Based on the three-step anneal model, the redistribution of oxygen atom and the defect free zone depth were calculated. A significant outdiffusion of oxygen atoms is occurred during the denudation anneals at high temperature. Junction leakage current of P+/N-Well and N+/P-Well junctions, as a function of denudation anneal temperature, was decreased with increase of anneal temperature and is closely related with the behaviors of oxygen atoms. Also it is found that the denudation anneal at high temperature very effective for the fabrication of reliable 256Mega-bit level devices.