• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.112-120
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• 1996

With the MOsES (mask oxide sidewall etch scheme)process which uses the conventional i-line stepper and isotropic wet etching, CMOSFET's with fine gate pattern of 0.1.mu.m CMOSFET device, the screening oxide is deposited before the low energy ion implantation for source/drain extensions and two step sidewall scheme is adopted. Through the characterization of 0.1.mu.m CMOSFET device, it is found that the screening oxide deposition sheme has larger capability of suppressing the short channel effects than two step sidewall schem. In cse of 200.angs.-thick screening oxide deposition, both NMOSFET and PMOSFET maintain good subthreshold characteristics down to 0.1.mu.m effective channel lengths, and show affordable drain saturation current reduction and low impact ionization rates.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.708-714
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• 1995

We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose($D_c$), channel length(L), gate oxide thickness($T_ox$) and junction depth of source/drain($X_j$) using device simulation. The buried channel behavior with these process prarameter variation were showed apparent difference. Also, the fabricated pMOSFET device having different channel length represented good S.S value and low leakage current with increasing drain voltage.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.830-832
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• 2010

본 논문에서는 MicroTec을 이용하여 D-MOS(double-diffusion MOS) 트랜지스터의 접합깊이에 변화를 주어 그에 따른 전류-전압 특성 곡선을 분석하였다. D-MOS는 채널의 길이를 줄이고 높은 항복 전압을 얻기 위해 이중 확산 도핑을 하는 것을 특징으로 하며 연속적으로 확산 공정을 두 번 진행하여 채널 길이를 짧게 하고 이에 의해 고전압과 고전류를 인가할 수 있는 장점을 가진다. 본 연구에서는 D-MOS의 접합깊이에 변화를 주고 이에 따른 전류와 전압의 특성을 비교하여 분석하였다.

• Imaging Science in Dentistry
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• v.42 no.4
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• pp.243-247
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• 2012

Purpose: This study was performed to compare the inverted digital images and film-based images of dry pig mandibles to measure the periodontal bone defect depth. Materials and Methods: Forty 2-wall bone defects were made in the proximal region of the premolar in the dry pig mandibles. The digital and conventional radiographs were taken using a Schick sensor and Kodak F-speed intraoral film. Image manipulation (inversion) was performed using Adobe Photoshop 7.0 software. Four trained examiners made all of the radiographic measurements in millimeters a total of three times from the cementoenamel junction to the most apical extension of the bone loss with both types of images: inverted digital and film. The measurements were also made in dry mandibles using a periodontal probe and digital caliper. The Student's t-test was used to compare the depth measurements obtained from the two types of images and direct visual measurement in the dry mandibles. A significance level of 0.05 for a 95% confidence interval was used for each comparison. Results: There was a significant difference between depth measurements in the inverted digital images and direct visual measurements (p>|t|=0.0039), with means of 6.29 mm ($IC_{95%}$:6.04-6.54) and 6.79 mm ($IC_{95%}$:6.45-7.11), respectively. There was a non-significant difference between the film-based radiographs and direct visual measurements (p>|t|=0.4950), with means of 6.64mm($IC_{95%}$:6.40-6.89) and 6.79mm($IC_{95%}$:6.45-7.11), respectively. Conclusion: The periodontal bone defect measurements in the inverted digital images were inferior to film-based radiographs, underestimating the amount of bone loss.

• Journal of Magnetics
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• v.11 no.1
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• pp.25-29
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• 2006

Recent experiments have demonstrated high TMR ratios in MTJs with the MgO barrier [1,2]. The CoFeB/MgO/CoFeB junctions showed better properties than the CoFe/MgO/CoFe junctions because the MgO layer had a good crystalline structure with (001) texture and smooth and sharp interface between CoFeB/MgO [3]. The amorphous CoFeB with 20 at%B starts the crystallization at $340^{\circ}C$ [4] and this crystallization of the CoFeB helps obtaining the high TMR ratio. In this work, the compositional changes in the MgO barrier and at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization were studied in annealed MTJs. XPS depth profiles were utilized. TEM analyses showed that the MgO barrier had (100) texture on CoFeB in the junctions. B in the bottom CoFeB layer diffused into the MgO barrier and B-oxide was formed at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.27-33
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• 1999

We have investigated the ultra-low energy B, P, and As ion implantation using upgraded MDRANGE code to study formation of nanometer junction depths. Even at the ultra-low energies simulated in this paper, it was revealed that ion channeling should be carefully considered. It was estimated that ion channelings have much effect on dopant profiles when B ion implant energies were more than 500 eV, P more than 2 keV and As approximately more than 4 keV. When we compared 2-dimensional dopant profiles of 1 keV B with that of tilted one, 2 keV P with tilt, and 5 keV As with tilt, we could find that most channeling cases occurred not lateral directions but depth directions.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.3
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• pp.134-140
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• 2002

Deep submicron NMOSFETs with elevated source/drain can be fabricated using self-aligned selective epitaxial growth(SEG) of silicon for enhanced device characteristics with shallow junction compared to conventional MOSFETs. Shallow junctions, especially with the heartily-doped S/D residing in the elevated layer, give hotter immunity to Yt roll off, drain-induced-barrier-lowering (DIBL), subthreshold swing (SS), punch-through, and hot carrier effects. In this paper, the characteristics of both deep submicron elevated source/drain NMOSFETs and conventional NMOSFETs were investigated by using TSUPREM-4 and MEDICI simulators, and then the results were compared. It was observed from the simulation results that deep submicron elevated S/D NMOSFETs having shallower junction depth resulted in reduced short channel effects, such as DIBL, SS, and hot carrier effects than conventional NMOSFETs. The saturation current, Idsat, of the elevated S/D NMOSFETs was higher than conventional NMOSFETs with identical device dimensions due to smaller sheet resistance in source/drain regions. However, the gate-to-drain capacitance increased in the elevated S/D MOSFETs compared with the conventional NMOSFETs because of increasing overlap area. Therefore, it is concluded that elevated S/D MOSFETs may result in better device characteristics including current drivability than conventional NMOSFETs, but there exists trade-off between device characteristics and fate-to-drain capacitance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.244-244
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• 2010

Doping process of crystalline silicon solar cell process is very important which is as influential on efficiency of solar. Doping process consists of pre -deposition and diffusion. Each of these processes is important in the process temperature and process time. Through these process conditions variable, p-n junction depth can be controled to low and high. In this paper, we studied a optimized doping pre-deposition temperature for high solar cell efficiency. Using a $200{\mu}m$ thickness multi-crystalline silicon wafer, fixed conditions are texture condition, sheet resistance($50\;{\Omega}/sq$), ARC thickness(80nm), metal formation condition and edge isolation condition. The three variable conditions of pre-deposition temperature are $790^{\circ}C$, $805^{\circ}C$ and $820^{\circ}C$. In the $790^{\circ}C$ pre-deposition temperature, we achieved a best solar cell efficiency of 16.2%. Through this experiment result, we find a high efficiency condition in a low pre-deposition temperature than the high pre-deposition temperature. We optimized a pre-deposition temperature for high solar cell efficiency.

• Journal of Korean Academy of Oral and Maxillofacial Radiology
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• v.28 no.2
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• pp.461-470
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• 1998

The comparative detectability of the artificial periapical defects among Ektaspeed Plus film. digitized and digora images was evaluated. The artifical defects were made in the cancellous bone and cancellous-cortical junction with the size of 1.0×0.8mm², 1.4×1.1mm² and 2.8×2.2mm². The defects in cancellous-cortical junction extended into cortical bone with the depth of 0, 0.5 and 1.0 mm. The results were as follows : 1. In junctional defects Ektaspeed Plus film for 2.8×12.2mm² defect showed the highest detectability. But significant difference were only found between Ektaspeed Plus films and digitized images (p<0.05). 2. Almost all defects within cacellous bone were not detected except a few digitized and Digora images for the size of 2.8×2.2mm². Digora images for them showed significant differences with Ektaspeed Plus films and digitized images (p<0.05). 3. The sensitinity of all imaging modalities were 0.9 or 1.0 in junctional defects for the size of 1.4×2.2mm² and 2.8×2.2mm². For cancellous defects, Digora image showed the highest sensitivity of 0.6 for the size of 2.8×2.2mm². 4. Significant differences for change of exposure time were found in most group of Ektaspeed Plus films and digitized images (p<0.05) . But there was no significant differences in Digora images for cacellous defects.

• Journal of Microbiology and Biotechnology
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• v.29 no.6
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• pp.863-876
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• 2019

Farm animals such as piglets are often affected by environmental stress, which can disturb the gut ecosystem. Antibiotics were commonly used to prevent diarrhea in weaned piglets, but this was banned by the European Union due to the development of antibiotic resistance. However, the use of probiotics instead of antibiotics may reduce the risk posed by pathogenic microorganisms and reduce the incidence of gastrointestinal diseases. Therefore, this study was conducted to investigate the effects of Lactobacillus casei Zhang on the mechanical barrier and immune function of early-weaned piglets infected using Escherichia coli K88 based on histomorphology and immunology. Fourteen-day-old weaned piglets were divided into a control group and experimental groups that were fed L. casei Zhang and infected with E. coli K88 with or without prefeeding and/or postfeeding of L. casei Zhang. The L. casei Zhang dose used was $10^7CFU/g$ diet. Jejunum segments were obtained before histological, immunohistochemical, and western blot analyses were performed. In addition, the relative mRNA expression of toll receptors and cytokines was measured. Piglets fed L. casei Zhang showed significantly increased jejunum villus height, villus height-crypt depth ratio, muscle thickness, and expression of proliferating cell nuclear antigen and tight junction proteins ZO-1 and occludin. The use of L. casei Zhang effectively reduced intestinal inflammation after infection. We found that L. casei Zhang feeding prevented the jejunum damage induced by E. coli K88, suggesting that it may be a potential alternative to antibiotics for preventing diarrhea in early-weaned piglets.