• 제목/요약/키워드: Junction Coupling

검색결과 64건 처리시간 0.025초

$NiFe/Co/Al_2O_3/Co/IrMn$ 접합의 터널링 자기저항효과

  • 홍성민;이한춘;김택기
    • 한국자기학회지
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    • 제9권6호
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    • pp.291-295
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    • 1999
  • IrMn을 반강자성체로 사용하고 순수한 Al을 자연산화시켜서 제작한 Al203를 절연층으로 사용한 spin-valve 형태의 NiFe/Co/Al2O3/Co/IrMn 터널링 접합의 자기저항효과를 조사하였다. IrMn의 두께가 약 100$\AA$이상일 경우 강자성체와의 교환상호작용이 발생하기 때문에 NiFe(183$\AA$)/Co(17$\AA$)/Al-oxide(16$\AA$)IrMn(100$\AA$) 터널링 접합에서 자기저항효과가 관찰되며 TMR비(%)는 $\pm$20 Oe의 인가자장에서 10% 이상의 값을 갖는다. 하부 자성층인 NiFe/Co의 길이방향으로 수행한 자장 중 열처리에 의해 저항은 다소 감소하고 TMR비(%)는 열처리온도에 따라 증가하여 20$0^{\circ}C$에서 23%의 최대값을 갖는다. 자성층의 폭을 변호시켜 접합면적을 달리한 시료의 TMR비(%)는 접합면적이 증가할수록 증가하고 저항은 감소한다.

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고효율 및 높은 격리 특성을 갖는 Ka 대역 도파관 결합기 설계 및 제작 (Design and Fabrication of Ka-band Waveguide Combiner with High Efficiency and High Isolation Characteristics)

  • 김효철;조흥래;이주흔;이덕재;안세환;이만희;주지한;김홍락
    • 한국인터넷방송통신학회논문지
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    • 제22권2호
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    • pp.35-42
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    • 2022
  • 본 논문에서는 SSPA(Solid state amplifier) 의 핵심 모듈인 결합기의 효율 및 격리 특성을 높이는 방법에 대해 연구하였다. 구체적으로 도파관 결합기에서 공용 포트와 격리 포트 정합을 이루어 격리도를 확보 하였다. 정합을 위한 매칭 구조는 원형 디스크 형태로 도파관 결합기 내부에서 음각으로 가공하게 된다. 구조는 매우 단순하여 안정적인 성능 확보가 가능하다. 그리고 이러한 구조는 이전 연구 대비 60배 이상의 높은 임계전력 성능을 보여 고출력에 적합함을 확인하였다. 그리고 1단의 T-junction과 2, 3단의 MagicT 결합기를 조합하여 소형화를 이루고, 삽입손실을 줄여 결합 효율을 최적화 하였다. 제작된 도파관 결합기는 16dB 이상의 격리도와 86.2% 의 결합 효율을 얻었다.

경계적분법과 세그멘테이션 기법에 의한 광대역 마이크로스트립 로트만 렌즈의 해석 및 설계 (An Analysis and Design of Wideband Microstrip Rotman Lens by Contour Integral and Segmentation Method)

  • 이광일;오승엽
    • 한국전자파학회논문지
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    • 제14권7호
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    • pp.769-776
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    • 2003
  • 본 논문은 경계적분법과 세그멘테이션 기법을 이용하여 광대역 주파수 및 광 조향각 범위에서 빔조향이 가능한 마이크로스트립 로트만 렌즈의 해석 및 설계를 제안하고 있다. 렌즈 각 포트간의 모든 상호결합과 다중반사 및 선로간 불연속 특성이 해석에 포함되었다. 등간격 포트 설계를 통해 광조향각 범위에서 배열포트의 출력 리플을 억제하는 구조를 구현하였다. 12 입력 12 출력의 각 포트에 지수함수 테이퍼를 적용하여 임피던스 정합 및 포트간 상호결합을 해석하고 최적화하였다. 제작된 렌즈는 측정결과 6~18 GHz의 광대역 주파수 범위와 $\pm$53$^{\circ}$의 조향각 범위에 대해 $\pm$1.8 dB 이하의 삽입손실 편차와 1$^{\circ}$이하의 조향 정확도를 가지며, 해석결과 와도 잘 일치함을 확인하였다.

Fabrication of Schottky Device Using Lead Sulfide Colloidal Quantum Dot

  • Kim, Jun-Kwan;Song, Jung-Hoon;An, Hye-Jin;Choi, Hye-Kyoung;Jeong, So-Hee
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.189-189
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    • 2012
  • Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

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BLT 방정식을 이용하 RF 검파 회로 해석 (RF Detecting Circuit Analysis by Using BLT Equation)

  • 황세훈;박윤미;정현교
    • 전기학회논문지
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    • 제56권9호
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    • pp.1643-1647
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    • 2007
  • Recently, there is a need for research concerning the technologies and precaution methods against electronic bomb assaults. There lays perplex constitution and much coupling phenomenon in this type of system, and thus requires much time and memory in order to translate the system with the existing translation methods. Applying the EMT (Electromagnetic Topology) would prove much more efficient. In this paper, EMT has been applied to the circuit-like micro system, previously employed in micro systems. Also, each section has been interpreted using the BLT (Baum, Liu, Tesche) equation using the EMT, then reconstructed, consequentially interpreting an entire system. In this paper, a simple circuit containing active and passive elements based on a CPW has been interpreted employing the BLT equation, and has been proven by experiment using the circuit simulation, a simulation officially recognized for its accuracy in interpreting small structures. The interpretation results have been presented by an S-parameter, and by comparing the interpretation results attained through the BLT equation and that from common simulation to that from experimentation, that the BLT equation turned out to be the most reliable interpretation method could be found.

A semispherical SQUID magnetometer system using high sensitivity double relaxation oscillation SQUIDs for magnetoencephalographic measurements

  • Lee, Yong-Ho;Hyukchan Kwon;Kim, Jin-Mok;Kim, Kwoong;Park, Yong-Ki
    • 한국초전도ㆍ저온공학회논문지
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    • 제5권1호
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    • pp.21-26
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    • 2003
  • We designed and constructed a multichannel superconducting quantum interference device (SQUID) magnetometer system to measure magnetic fields from the human brain. We used a new type of SQUID, the double relaxation oscillation SQUID (DROS). With high flux-to-voltage transfers of the DROS, about 10 times larger than the dc SQUIDs, simple flux-locked loop circuits could be used for SQUID operation. Also the large modulation voltage of the DROS, typically being 100 $mutextrm{V}$, enabled stable flux-locked loop operation against the thermal offset voltage drift of the preamplifier. The magnetometers were fabricated using the Nb/AlOx/Nb junction technology. The SQUID system consists of 37 signal magnetometers, distributed on a semispherical surface, and 11 reference channels were installed to pickup background noises. External feedback was used to eliminate the magnetic coupling with the adjacent channels. The liquid helium dewar has a capacity of 29 L and boil-off rate of about 4 L/d with the total 48 channel insert. The magnetometer system has an average noise level of 3 fT/√Hz at 100 Hz, inside a shielded loon, and was applied to measure auditory-evoked fields.

Experimental Investigations for Thermal Mutual Evaluation in Multi-Chip Modules

  • Ayadi, Moez;Bouguezzi, Sihem;Ghariani, Moez;Neji, Rafik
    • Journal of Power Electronics
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    • 제14권6호
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    • pp.1345-1356
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    • 2014
  • The thermal behavior of power modules is an important criterion for the design of cooling systems and optimum thermal structure of these modules. An important consideration for high power and high frequency design is the spacing between semiconductor devices, substrate structure and influence of the boundary condition in the case. This study focuses on the thermal behavior of hybrid power modules to establish a simplified method that allows temperature estimation in different module components without decapsulation. This study resulted in a correction of the junction temperature values estimated from the transient thermal impedance of each component operating alone. The corrections depend on mutual thermal coupling between different chips of the hybrid structure. A new experimental technique for thermal mutual evaluation is presented. Notably, the classic analysis of thermal phenomena in these structures, which was independent of dissipated power magnitude and boundary conditions in the case, is incorrect.

$MgB_2$ 결정립 나노브릿지 특성에 관한 연구 (Properties of $MgB_2$ Intragrain Nanobridges)

  • 홍성학;이순걸;성원경;강원남;김동호;김영국;정국채
    • Progress in Superconductivity
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    • 제10권2호
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    • pp.74-78
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    • 2009
  • Inter-grain nanobridges of the $MgB_2$ superconductor have been fabricated by focused-ion-beam(FIB) and their electrical transport properties were studied. The $MgB_2$ film was prepatterned into microbridges by a standard argon ion milling technique and then FIB-patterned into 100 nm$\times$100 nm bridges. Current-voltage characteristics showed a strong flux-flow type behavior at all temperatures with a trait of Josephson coupling near $T_c$. At low temperatures, the curves showed a two-step resistance-doubled transition with occasional hysteresis. The resistance-doubling transition is believed to be due to a two-channel flux-flow effect. The temperature-dependent critical current data showed $I_c(T){\propto}(1-T/T_c)^2$ near $T_c$, same as a normal barrier junction, and $I_c(T){\propto}(1-T/T_c)^{1.2}$ at low temperatures, similar to that of a film.

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Gain characteristics of SQUID-based RF amplifiers depending on device parameters

  • Lee, Y.H.;Yu, K.K.;Kim, J.M.;Lee, S.K.;Chong, Y.;Oh, S.J.;Semertzidis, Y.K.
    • 한국초전도ㆍ저온공학회논문지
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    • 제21권1호
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    • pp.10-14
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    • 2019
  • Radio-frequency (RF) amplifiers based on direct current (DC) superconducting quantum interference device (SQUID) have low-noise performance for precision physics experiments. Gain curves of SQUID RF amplifiers depend on several parameters of the SQUID and operation conditions. We are developing SQUID RF amplifiers for application to measure very weak RF signals from ultra-low-temperature high-magnetic-field microwave cavity in axion search experiments. In this study, we designed, fabricated and characterized SQUID RF amplifiers with different SQUID parameters, such as number of input coil turn, shunt resistance value of the junction and coupling capacitance in the input coil, and compared the results.

CoFe/NiFeSiB/CoFe 자유층을 갖는 이중장벽 자기터널접합의 바이어스전압 의존특성 (Bias Voltage Dependence of Magnetic Tunnel Junctions Comprising Double Barriers and CoFe/NiFeSiB/CoFe Free Layer)

  • 이선영;이장로
    • 한국자기학회지
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    • 제17권3호
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    • pp.120-123
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    • 2007
  • 이 연구에서는 Ta 45/Ru 9.5/IrMn 10/CoFe $3/AlO_x$/자유층/$AlO_x$/CoFe 7/IrMn 10/Ru 60(nm) 구조를 갖는 이중장벽 자기터널접합(double-barrier magnetic tunnel junction: DMTJ)를 다루었다. 자유층은 $Ni_{16}Fe_{62}Si_8B_{14}\;7nm$, $Co_{90}Fe_{10}(fcc)$ 7 nm 및 $CoFet_1$/NiFeSiB $t_2$/CoFe $t_1$으로 구성하였으며 두께 $t_1,\;t_2$는 변화시켰다. 즉 TMR비와 RA를 개선하기 위하여 부분적으로 CoFe층을 대체할 수 있는 비정질 NiFeSiB층이 혼합된 자유층 CoFe/NiFeSiB/CoFe을 갖는 DMTJ를 연구하였다. NiFeSiB($t_1=0,\;t_2=7$)만의 자유층을 갖는 DMTJ는 터널자기저항(TMR)비 28%, 면적-저항곱(RA) $86k{\Omega}{\mu}m^2$, 보자력($H_c$) 11 Oe 및 층간 결합장($H_i$) 20 Oe를 나타내었다. $t_1=1.5,\;t_2=4$인 경우의 하이브리드 DMTJ는 TMR비 30%, RA $68k{\Omega}{\mu}m^2$$H_c\;11\;Oe$를 가졌으나 $H_i$는 37 Oe로 증가하였다. 원자현미경(AFM)과 투과전자현미경(TEM)측정을 통하여 NiFeSiB층 두께가 감소하면 $H_i$가 증가하는 것을 확인하였다. 비정질 NiFeSiB층이 두꺼워지면 보통 계면의 기복을 유도하는 원주형성장(columnar growth)를 지연시키는데 유효하였다. 그러나 NiFeSiB층이 얇으면 표면거칠기는 증가하고 전자기적 Neel 결합 때문에 Hi는 커졌다.