• Title/Summary/Keyword: Junction Coupling

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Quantitative identification of the fluxon-flow modes in a stack of intrinsic Josephson junctions of $Bi_2$$Sr_2$Ca$Cu_2$$O_{8+x}$ single crystals

  • Bae, Myung-Ho;Lee, Hu-Jong
    • Progress in Superconductivity
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    • v.5 no.1
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    • pp.9-12
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    • 2003
  • We observed the splitting of the fluxon-flow branches in the current-voltage characteristics of serially stacked intrinsic Josephson junctions (IJJs) formed in $Bi_2$$Sr_2$$CaCu_2$$O_{ 8+x}$ single crystals in the long-junction limit. Stacks of IJJs were sandwiched between two Au electrodes deposited on the top and the bottom of the stack using the ‘double-side cleaving technique’. In all the samples studied, the branch splitting started occurring for a dense fluxon configuration around 2 T and became more distinct in a higher magnetic field range. This observation can be explained in terms of switching between different Josephson fluxon modes in resonance with the collective plasma oscillations induced by both inductive and capacitive coupling between stacked IJJs. This is the first detailed and quantitative identification of the coherent flux-flow modes in stacked..

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A transport model for high-frequency vibrational power flows in coupled heterogeneous structures

  • Savin, Eric
    • Interaction and multiscale mechanics
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    • v.1 no.1
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    • pp.53-81
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    • 2008
  • The theory of microlocal analysis of hyperbolic partial differential equations shows that the energy density associated to their high-frequency solutions satisfies transport equations, or radiative transfer equations for randomly heterogeneous materials with correlation lengths comparable to the (small) wavelength. The main limitation to the existing developments is the consideration of boundary or interface conditions for the energy and power flow densities. This paper deals with the high-frequency transport regime in coupled heterogeneous structures. An analytical model for the derivation of high-frequency power flow reflection/transmission coefficients at a beam or a plate junction is proposed. These results may be used in subsequent computations to solve numerically the transport equations for coupled systems, including interface conditions. Applications of this research concern the prediction of the transient response of slender structures impacted by acoustic or mechanical shocks.

Superconductivity and physics (초전도와 물리학)

  • 오범환
    • Electrical & Electronic Materials
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    • v.9 no.3
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    • pp.304-309
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    • 1996
  • 본 고에서는 초전도에 관한 학문적 연구내용의 추이와 그 응용기술의 개발내용을 간략히 살펴보았다. 고온 초전도의 형성원리에 대한 학문적 관심과 응용기술 개발사이의 괴리를 이해하려는 노력의 일환으로 고온 초전도체를 주대상으로 한 각종 연구결과들을 소개하면서 순수학문과 공학기술과의 긴밀한 연관성을 찾았다. 전자와 정공의 도핑 대칭성을 확립한 Nd-Ce-Cu-O의 발견은 물성의 정확한 이해에 기초한 성공이었고, 산화물 고온 초전도체들의 전자쌍 파동함수의 대칭성에 관한 논의들에서 최근 연구의 주종을 이루고 있는 Josephson-coupling과 Photoemission등의 직관적인 결과를 주는 측정 실험들은 고도의 첨단기술과 죠셉슨 접합 등의 새로운 초전도 물성개념의 정확한 이해를 요하는 연구들이었다. 이러한 새로운 초전도 개념들의 토대위에 현 응용분야들의 추세를 대략 살핌으로써 부실하나마 미래의 차원 높은 수요에 대비한 학문적, 기술적 준비를 시도해 보았다.

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Nano-Optical Investigation of Enhanced Field at Gold Nanosphere-Gold Plane Junctions

  • Ahn, Sung-Hyun;Park, Won-Hwa;Kim, Zee-Hwan
    • Bulletin of the Korean Chemical Society
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    • v.28 no.12
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    • pp.2200-2202
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    • 2007
  • The local field distribution around gold nanosphere-gold plane junction has been studied using the finitedifference time-domain (FDTD) electrodynamics calculation procedure. We find that both the in-plane and out-of-plane polarized excitation produce enhanced field strong enough to explain the observed SERS activities of the junctions. Comparison with a simple dipole-image dipole model shows that the enhanced field primarily originates from the multipole-image multipole interaction, which indicates that the detailed fine-structures of the nanoparticles also play a significant role in the SERS activities as well.

Placement Optimization of Power Components in Static Power Converters under Spatial and Thermal Constraints

  • Larouci, Cherif;Ejjabraoui, Kamal;Lefranc, Pierre;Marchand, Claude
    • Journal of Power Electronics
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    • v.12 no.2
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    • pp.368-376
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    • 2012
  • This paper deals with an optimization approach of 3D space placement of power components under volume and thermal constraints. It consists in optimizing semiconductors positions on a heat sink by respecting the components junction temperatures and minimizing the heat sink size. The aim is to remove risks on the 3D converter components placement and ensure their effective integration before carrying out the first physical prototype. This approach is based on coupling an optimization environment with a thermal finite element simulation tool. A pre-sizing step using analytical models is performed to set the optimization computations coupled to numerical simulation.

Simulation and Modelling of the Write/Erase Kinetics and the Retention Time of Single Electron Memory at Room Temperature

  • Boubaker, Aimen;Sghaier, Nabil;Souifi, Abdelkader;Kalboussi, Adel
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.2
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    • pp.143-151
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    • 2010
  • In this work, we propose a single electron memory 'SEM' design which consist of two key blocs: A memory bloc, with a voltage source $V_{Mem}$, a pure capacitor connected to a tunnel junction through a metallic memory node coupled to the second bloc which is a Single Electron Transistor "SET" through a coupling capacitance. The "SET" detects the potential variation of the memory node by the injection of electrons one by one in which the drainsource current is presented during the memory charge and discharge phases. We verify the design of the SET/SEM cell by the SIMON tool. Finally, we have developed a MAPLE code to predict the retention time and nonvolatility of various SEM structures with a wide operating temperature range.

Numerical study of topological SQUIDs

  • Soohong, Choi;Yeongmin, Jang;Sara, Arif;Yong-Joo, Doh
    • Progress in Superconductivity and Cryogenics
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    • v.24 no.4
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    • pp.11-15
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    • 2022
  • We conducted numerical calculations to obtain the critical current as a function of the magnetic flux through the topologically trivial and non-trivial superconducting quantum interference devices (SQUIDs), with varying the capacitive and inductive couplings of Josephson junctions (JJs). Our calculation results indicate that a nontrivial SQUID is almost indistinguishable from trivial SQUID, considering the effective capacitance coupling. When the SQUID contains 2π- and 4π-periodic supercurrents, the periodicity of the current-flux relation can be distinguished from the purely trivial or nontrivial SQUID cases, and its difference is sensitive to the relative ratio between the topologically trivial and nontrivial supercurrents. We believe that our calculation results would provide a practical guide to quantitatively measure the portion of the topologically nontrivial supercurrents in experiments.

MR Characteristics of CoO based Magnetic tunnel Junction (CoO를 절연층으로 이용한 스핀 의존성 터널링 접합에서의 자기저항 특성)

  • 정창욱;조용진;안동환;정원철;조권구;주승기
    • Journal of the Korean Magnetics Society
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    • v.10 no.4
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    • pp.159-163
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    • 2000
  • MR characteristics in magnetic tunnel junction using CoO as the oxide barrier were investigated. Spin-dependent tunnel junctions were fabricated on 4$\^$o/ tilt-cut (111)Si substrates in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni$\_$80/Fe$\_$20/(300 $\AA$) and Co(300 $\AA$), respectively. The oxide barriers (CoO) were formed by the thermal oxidation at room temperature in an O$_2$ atmosphere and the plasma oxidation. The increase of coercive field due to antiferromagnetic-ferromagnetic coupling has been observed in O$_2$plasma-oxidized CoO based junctions at room temperature. At a sensing current of 1 mA, MR ratios of O$_2$plasma-oxidized CoO based junction and thermal-oxidized CoO based junction at room temperature were 1% and 5%, respectively. Larger MR ratios are observed in magnetic tunnel juctions with thermal oxidized CoO when sensing current more than applied 1.5 mA. At a sensing current of 1.5 mA, we have observed MR value of 28 % and specific resistance (RA=R$\times$A) value of 10.9 ㏀$\times$$^2$. When specific resistance values reached 2.28 ㏀$\times$$^2$, we have observed that MR ratios become as high as 120%.

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Development of an SIS(Superconductor-Insulator-Superconductor) Junction Mixer over 120∼180 GHz Band (120∼180 GHz 대역 SIS (Superconductor-Insulator-Superconductor) 접합 믹서의 개발)

  • Chung, Moon-Hee;Lee, Changhoon;Kim, Kwang-Dong;Kim, Hyo-Ryoung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.8
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    • pp.737-743
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    • 2004
  • A fixed-tuned SIS(Superconductor-Insulator-Superconductor) mixer across 120∼180 GHz band has been developed. This mixer employs an SIS chip fabricated by Nobeyama radio observatory which consists of a series array of 6 Nb/Al-Al$_2$O$_3$/Nb junctions in a microstrip line on a fused quartz substrate. The SIS chip is placed at the center of the half-height waveguide mixer mount to have a good incoming signal coupling over the whole frequency band. No mechanical tuner was used in the SIS mixer and the RF signal and local oscillator power are injected to the mixer via a cooled cross-guide coupler. In order to prevent the IF signal loss, the If output impedance of the SIS mixer was matched to the 50 $\Omega$ input impedance of the IF chain. Measured double sideband noise temperatures of a receiver using the SIS mixer are 32∼131 K over 120∼180 GHz band. The developed SIS mixer is now in use for radio astronomical observations on the TRAO 14 m radio telescope.