• The Journal of Korean Society for Radiation Therapy
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• v.32
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• pp.61-71
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• 2020

Purpose: To investigate the effect of collimator angle on plan quality of PAN-Pelvis Multi-isocenter VMAT plan, dose reproducibility at the junction and impact on set-up error at the junction. Material and method: 10 adult patients with whole pelvis cancer including PAN were selected for the study. Using Trubeam STx equipped with HD MLC, we changed the collimator angle to 20°, 30°, and 45° except 10° which was the default collimator angle in the Eclipse(version 13.7) and all other treatment conditions were set to be the same for each patient and four plans were established also. To evaluate these plans, PTV coverage, coverage index(CVI) and homogeneity index (HI) were compared and clinical indicators for each treatment sites in normal tissues were analyzed. To evaluate dose reproducibility at the junction, the absolute dose was measured using a Falmer type ionization chamber and dose changes at the junction were evaluated by moving the position of the isocenter in and out 1~3mm and setting up the virtual volume at the junction. Result: CVI mean value was PTV-45 0.985±0.004, PTV-55 0.998±0.003 at 45° and HI mean value was PTV-45 1.140±0.074, and PTV-55 1.031±0.074 at 45° which were closest to 1. V20Gy of the kidneys decreased by 9.66% and average dose of bladder and V30 decreased by 1.88% and 2.16% at 45° compared to 10° for the critical organs. The dose value at the junction of the plan and the actual measured were within 0.3% and within tolerance. At the junction, due to set-up error the maximum dose increased to 14.56%, 9.88%, 8.03%, and 7.05%, at 10°, 20°, 30°, 45°, and the minimum dose decreased to 13.18%, 10.91%, 8.42%, and 4.53%, at 10°, 20°, 30°, 45° Conclusion: In terms of CVI, HI of PTV and critical organ protection, overall improved values were shown as the collimator angle increased. The impact on set-up error at the junction by collimator angle decreased as the angle increased and it will help improve the anxiety about the set up error. In conclusion, the collimator angle should be recognized as a factor that can affect the quality of the multi-isocenter VMAT plan and the dose at the junction, and be careful in setting the collimator angle in the treatment plan.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.193-193
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• 2012

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

• Radiation Oncology Journal
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• v.7 no.1
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• pp.93-100
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• 1989

Several combinations of measuring devices and phantoms were studied to measure electron beams. Silicon Pmt junction diode was used to find the dependence of depth dose profile on field size on axis of electron beam Depths of 50, 80 and $90\%$ doses increased with the field size for small fields. For some larger fields, they were nearly constant. The smallest of field sizes over which the parameters were constant was enlarged with increase of the energy of electron beams. Depth dose distributions on axis of electron beam of $10\times10cm^2$ field were studied with several combinations of measuring devices and phantoms. Cylindrical ion chamber could not be used for measurement of surface dose, and was not convenient for measurement of near surface region of 6MeV electron. With some exceptions, parameters agreed well with those studied by different devices and phantoms. Surface dose in some energies showed $4\%$ difference between maximum and minimum. For 18MeV, depths of 80 and $90\%$ doses were considerably shallower by film than by others. Parallel-plate ion chamber with polystyrene phamtom and silicon PN junction would be recommended for measurement of central axis depth dose of electron beams with considerably large field size. It is desirable not to use cylindrical ion chamber for the purpose of measurement of surface dose or near surface region for lower energy electron beam. It is questionable that film would be recommended for measurement of dose distribution of electron with high energy like as 18MeV.

• Journal of Radiation Protection and Research
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• v.36 no.3
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• pp.168-173
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• 2011

This study investigated characteristics of dose distribution at junction field of X-ray and electron beams according to the method for fabricating the insert block on the electron cone. Insert block were fabricated to the divergency cutout block and the straight cutout block. For the 6 MV X-ray and 10 MeV nominal energy of electron beam, we was adjacent to the light field of X-ray and electron beam at a surface of matrix chamber and measured to beam profile of abutted field in the 0, 1, 2, 3 cm measurement depth. As a result, characteristics of dose distribution at junction field, straight block was existent that over dose area exceed the give dose more than 5% and under dose area with a rapid change in dose distribution. However, divergency block had remarkably decreased the over dose area caused by the lateral scattering effects of decrease, and being existed uniformity dose distribution in the junction field. Therefore, divergency block were the benefits of radiation dose delivery, in order to applied the clinical, measurement of electron beams according to the fabrication method of the block should be considered carefully.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.107-108
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• 2006

ZnO is a promising material for UV or blue LEDs p-Type ZnO thin films which are imperative for the p-n junction of LEDs are difficult to achieve because of strong compensation of intrinsic defects such as zinc interstitial and oxygen vacancy. The method of codoping group three elements and group five elements is effective for the realization of p-type ZnO films. In this study, We codoped N and Al m ZnO thin films by RF magnetron sputtering and annealed the films in sputtering chamber. Some films showed p-type conductivity m Seeback effect measurement.

• Journal of Electrochemical Science and Technology
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• v.4 no.4
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• pp.153-156
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• 2013

Charge transfer between STM tip and Au(100) has been investigated by using a Scanning Tunneling Microscopy (STM) technique in dry, $H_2O$, and $D_2O$ atmospheres. Dry atmosphere was indicated by humidity as low as 5 % and high humidity as high as 98% was managed by injecting $H_2O$ and $D_2O$ to the chamber. The current decayed more slowly in high humidity than in dry atmosphere. The plateau currents were found to appear at separations larger than ca. $5{\AA}$ where the current decay stopped depending on applied bias voltages. The polarity dependence was observed at the STM junction between Pt-Ir tip and the gold. On the contrary, little dependence was seen at the one between Au tip and the substrate electrode.

• 제어로봇시스템학회:학술대회논문집
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• 1995.10a
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• pp.79-82
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• 1995

The problem of temperature control for rapid thermal processing (RTP) in semiconductor manufacturing is discussed in this paper. Among sub=micron technologies for VLSI devices, reducing the junction depth of doped region is of great importance. This paper investigates existing methods for manufacturing wafers, focusing on the RPT which is considered to be good for formation of shallow junctions and performs the wafer fabrication operation in a single chamber of annealing, oxidation, chemical vapor deposition, etc., within a few minutes. In RTP for semiconductor manufacturing, accurate and uniform control of the wafer temperature is essential. In this paper, a robustr controller is designed using a recently developed optimization technique. The controller designed is then tested via computer simulation and compared with the other results.

• Restorative Dentistry and Endodontics
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• v.2 no.1
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• pp.38-49
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• 1976

Central and lateral incisors of 20, 40 and 60 age groups were bisected pararelly to long axis and middle portion of mesio-distal of teeth. And author measured the hardness of various areas in enamel and dentin with vickers hardness tester. Measured levels were divided into the labio-middle portion, middle portion of incisal edge and linguo-middle portion in enamel and dentin of all age groups. The results were as follows; 1) Total average hardness of enamel for 20, 40 and 60 age groups were respectively Hv. 366.5${\pm}$5.75, Hv. 372.9${\pm}$8.16 and Hv. 389.8${\pm}$10.27. 2) Total average hardness of dentin for 20, 40 and 60 age groups were respectively Hv. 51.0${\pm}$2.14, Hv. 54.0${\pm}$1.87 and Hv. 55.3${\pm}$2.23. 3) Total microhardness values in enamel and dentin of 60 age group was highered than 20 and 40 age groups. 4) The hardness values of enamel and dentin in all age groups were detected lower value on the middle portion of incisal edge than the labio-middle portion and linguo-middle portion. 5) Microhardness values of enamel was highered gradually from the dentinoenamel junction to the outer surface and it lowered at the outermost surface in all age groups. The microhardness values of dentin were the highest values at 600${\mu}$ from dentino-enamel junction and the lowest values at near the pulp chamber in all age groups.

• Restorative Dentistry and Endodontics
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• v.23 no.2
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• pp.656-669
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• 1998

Hydrogen peroxide at high concentration during walking bleaching may cause damage to the tooth structure and to the surrounding periodontal tissues and may develop external root resorption. Clinically, It is so important to find a method of prevention or minimization of these complications. The efficacy of various chamber-irrigating agents to eliminate residual hydrogen peroxide after walking bleaching was examined and compared with water rinse in this study. Extracted human 46 premolars without any cementoenamel junction defects were treated endodontically and based with IRM to 1 mm below CEJ and totally bleached 3 times for each tooth with 30% hydrogen peroxide and sodium perborate. Upon completion of the 3rd walking bleaching procedure, the cervical portion and pulp chamber of each group of teeth were irrigated with catalase, 70% ethylalcohol, acetone, and distilled water. And then, a radicular hydrogen peroxide penetration was measured with spectrophotometer immediately after each bleaching and following treatment with each chamber-irrigating agents, and the significance of their eliminating efficacy of residual hydrogen peroxide was analyzed by Kruskal-Wallis test. The results were obtained as follows. 1. Cervical root penetration of hydrogen peroxide was increased as the bleaching procedure was repeated(P<.01). 2. The most effective irrigant that removed residual hydrogen peroxide was the catalase, and the least effective one was water rinsing (P<.01).; there was no significant difference between the acetone and ethanol group. 3. The Irrigation with antioxidant enzyme or water-displacement solutions can eliminate residual oxygen radicals from the pulp chamber effectively after walking bleaching. So, these agents can reduce adverse effects such as cervical external resorption and periapical inflammation and prevent residual $O_2$ from impeding composite resin polymerization, thus increase the bonding strength of composite resin. This, in turn reduces microleakage and discoloration of the esthetic restoration, extending its service-life.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.230-230
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• 2013

In amorphous or microcrystalline thin-film silicon solar cells, p-i-n structure is used instead of p/n junction structure as in wafer-based Si solar cells. Hence, these p-i-n structured solar cells inevitably consist of many interfaces and the cell efficiency critically depends on the effective control of these interfaces. In this study, in-situ plasma treatment process of the interfaces was developed to improve the efficiency of a-Si:H solar cell. The p-i-n cell was deposited using a single-chamber VHF-PECVD system, which was driven by a pulsed-RF generator at 80 MHz. In order to solve the cross-contamination problem of p-i layer, high RF power was applied without supplying SiH4 gas after p-layer deposition, which effectively cleaned B contamination inside chamber wall from p-layer deposition. In addition to the p-i interface control, various interface control techniques such as thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, multiple applications of thin i-layer deposition and H2 plasma treatment, H2 plasma treatment of i-layer prior to n-layer deposition, etc. were developed. In order to reduce the reflection at the air-glass interface, anti-reflective SiO2 coating was also adopted. The initial solar cell efficiency over 11% could be achieved for test cell area of 0.2 $cm^2$.