• Title/Summary/Keyword: IrMn

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Magnetization Process in Vortex-imprinted Ni80Fe20/Ir20Mn80 Square Elements

  • Xu, H.;Kolthammer, J.;Rudge, J.;Girgis, E.;Choi, B.C.;Hong, Y.K.;Abo, G.;Speliotis, Th.;Niarchos, D.
    • Journal of Magnetics
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    • v.16 no.2
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    • pp.83-87
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    • 2011
  • The vortex-driven magnetization process of micron-sized, exchange-coupled square elements with composition of $Ni_{80}Fe_{20}$ (12 nm)/$Ir_{20}Mn_{80}$ (5 nm) is investigated. The exchange-bias is introduced by field-cooling through the blocking temperature (TB) of the system, whereby Landau-shaped vortex states of the $Ni_{80}Fe_{20}$ layer are imprinted into the $Ir_{20}Mn_{80}$. In the case of zero-field cooling, the exchange-coupling at the ferromagnetic/antiferromagnetic interface significantly enhances the vortex stability by increasing the nucleation and annihilation fields, while reducing coercivity and remanence. For the field-cooled elements, the hysteresis loops are shifted along the cooling field axis. The loop shift is attributed to the imprinting of displaced vortex state of $Ni_{80}Fe_{20}$ into $Ir_{20}Mn_{80}$, which leads to asymmetric effective local pinning fields at the interface. The asymmetry of the hysteresis loop and the strength of the exchange-bias field can be tuned by varying the strength of cooling field. Micromagnetic modeling reproduces the experimentally observed vortex-driven magnetization process if the local pinning fields induced by exchange-coupling of the ferromagnetic and antiferromagnetic layers are taken into account.

Rotatable Anisotropy Field in Exchange Coupled CoFe/MnIr(2.5 nm) Thin Films (교환 결합력을 갖는 CoFe/MnIr(2.5 nm) 박막의 회전 이방성 자기장 특성)

  • Yoon, Seok Soo;Kim, Dong Young
    • Journal of the Korean Magnetics Society
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    • v.27 no.3
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    • pp.77-81
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    • 2017
  • The rotatable anisotropy effect was observed in the ferromagnetic resonance measurement in exchange coupled ferromagnetic/antiferromagnetic thin films and it was due to rotation of antiferromagnetic layer by the exchange coupling energy. We analyzed the CoFe thickness dependence of rotatable anisotropy field and ferromagnetic resonance linewidth in exchange coupled $CoFe(t_F)/MnIr(2.5nm)$ thin films. The rotatable anisotropy field was inversely propositional to the CoFe thickness and it was well fitted by the rotatable anisotropy energy of $0.96erg/cm^2$. The ferromagnetic resonance linewidth were linearly propositional to the rotatable anisotropy field in $t_F$ < 50 nm, while it was more dominated by the eddy current effect in $t_F$ > 50 nm.

Characteristics of La0.2Ca0.8MnO3 Powder and Pellet Prepared by Sol-Gel Process (졸-겔법으로 합성한 La0.2Ca0.8MnO3의 분말과 펠렛의 특성)

  • Jung, Miewon;Lee, Jiyun;Kim, Hyunjung
    • Applied Chemistry for Engineering
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    • v.16 no.1
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    • pp.150-152
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    • 2005
  • $La_{0.2}Ca_{0.8}MnO_3$ colossal magnetoresistance (CMR) powders and pellets were synthesized by sol-gel process involving a stable metal chelate complex with acetylacetone. The structural changes of reaction mixture were monitored by FT-IR spectroscopy and X-ray diffractometry. The microstructure of sintered samples and the cation composition of gel powder were studied by FE-SEM/EDS and ICP-AES. The magnetic property was investigated as a function of temperature.

Effects of Thickness of Ferromagnetic Co Layer and Annealing on the Magnetic Properties of Co/IrMn Bilayers. (Co/IrMn 이층막의 자기적 특성과 Co 두께 및 어닐링의 영향)

  • Jung, Jung-Gyu;Lee, Chan-Gyu;Koo, Bon-Heun;Lee, Gun-Hwan;Hayashi, Yasunori
    • Korean Journal of Materials Research
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    • v.13 no.7
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    • pp.447-452
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    • 2003
  • Effects of annealing and thickness of Co layer in Co/IrMn bilayers on the magnetic properties have been investigated. The highest interfacial exchange coupling energy($J_{K}$ = 0.12 erg/$\textrm{cm}^2$) was obtained for 10 nm Co layer thickness. Exchange bias field is inversely proportional to the magnetization, the thickness of the pinned layer, and the grain size of antiferromagnetic layer. Also it is related to the interfacial exchange energy difference, which is expected to depend on the surface roughness. These results almost agree with the random-field model of exchange anisotropy proposed by Malozemoff. Exchange bias field decreased slowly with increasing annealing temperature up to X$300^{\circ}C$. However, exchange bias field increased above $300^{\circ}C$.

Effect of Proton Irradiation on the Magnetic Properties of Antiferromagnet/ferromagnet Structures

  • Kim, Dong-Jun;Park, Jin-Seok;Ryu, Ho Jin;Jeong, Jong-Ryul;Chung, Chang-Kyu;Park, Byong-Guk
    • Journal of Magnetics
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    • v.21 no.2
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    • pp.159-163
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    • 2016
  • Antiferromagnet (AFM)/ferromagnet (FM) bilayer structures are widely used in the magnetic devices of sensor and memory applications, as AFM materials can induce unidirectional anisotropy of the FM material via exchange coupling. The strength of the exchange coupling is known to be sensitive to quality of the interface of the AFM/FM bilayers. In this study, we utilize proton irradiation to modify the interface structures and investigate its effect on the magnetic properties of AFM/FM structures, including the exchange bias and magnetic thermoelectric effect. The magnetic properties of IrMn/CoFeB structures with various IrMn thicknesses are characterized after they are exposed to a proton beam of 3 MeV and $1{\sim}5{\times}10^{14}ions/cm^2$. We observe that the magnetic moment is gradually reduced as the amount of the dose is increased. On the other hand, the exchange bias field and thermoelectric voltage are not significantly affected by proton irradiation. This indicates that proton irradiation has more of an influence on the bulk property of the FM CoFeB layer and less of an effect on the IrMn/CoFeB interface.

CoFeB과 IrMn 자성 박막의 고밀도 반응성 이온 식각

  • Kim, Eun-Ho;So, U-Bin;Gong, Seon-Mi;Jeong, Yong-U;Jeong, Ji-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.232-232
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    • 2010
  • 정보화 산업의 발달은 DRAM, flash memory 등을 포함한 기존의 반도체 메모리 소자를 대체할 수 있는 차세대 메모리 소자에 대한 개발을 요구하고 있다. 특히 magnetic random access memory (MRAM)는 SRAM과 대등한 고속화 그리고 DRAM 보다 높은 기록 밀도가 가능하고 낮은 동작 전압과 소비전력 때문에 대표적인 차세대 비휘발성 메모리로 주목받고 있다. 또한 MRAM소자의 고집적화를 위해서 우수한 프로파일을 갖고 재증착이 없는 나노미터 크기의 magnetic tunnel junction (MTJ) stack의 건식 식각에 대한 연구가 선행되어야 한다. 본 연구에서는 고밀도 반응성 이온 식각법(Inductively coupled plasma reactive ion etching; ICPRIE)을 이용하여 재증착이 없이 우수한 식각 profile을 갖는 CoFeB과 IrMn 박막을 형성하고자 하였다. Photoresist(PR) 및 Ti 박막의 두 가지 마스크를 이용하여 HBr/Ar, HBr/$O_2$/Ar 식각 가스들의 농도를 변화시키면서 CoFeB과 IrMn 박막의 식각 특성들이 조사되었다. 자성 박막과 동일한 조건에 대하여 hard mask로서 Ti가 식각되었다. 좋은 조건을 얻기 위해 HBr/Ar 식각 가스를 이용 식각할 때 pressure, bias voltage, rf power를 변화시켰고 식각조건에서 Ti 하드마스크에 대한 자성 박막들의 selectivity를 조사하고 식각 profile을 관찰하였다. 식각 속도를 구하기 위해 alpha step(Tencor P-1)이 사용되었고 또한 field emission scanning electron microscopy(FESEM)를 이용하여 식각 profile을 관찰함으로써 최적의 식각 가스와 식각 조건을 찾고자 하였다.

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Magnetoresistive and Pinning Direction Behaviors of Synthetic Spin Valves with Different Pinning Layer Thickness

  • Cho, Ho-Gun;Kim, Young-Keun;Lee, Seong-Rae
    • Journal of Magnetics
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    • v.7 no.4
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    • pp.147-150
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    • 2002
  • The pinning direction, the spin flop behaviors and the magnetoresistive properties in top synthetic spin valve structure [NiFe/CoFe/Cu/CoFe (t$_{p2}$)/Ru/CoFe (t$_{p1}$)/IrMn] were investigated. The magnetoresistive and pinning characteristics of synthetic spin valves strongly depended on the differences in the two pinning layer thickness, ${\Delta}t(=t_{p2}-t_{p1})$. In contrast to the conventional spin valves, the pinning direction (P1) was canted off with respect to the growth field axis with ${\Delta}t$. We found that the canting angle ${\Phi}$ had different values according to the annealing field direction and ${\Delta}t$. When the samples were annealed at above the blocking temperature of IrMn with zero fields, the canted pinned layer could be set along the growth field axis. Because the easy axis which was induced by the growth field during deposition is still active in all ferromagnetic layers except the IrMn at $250{^{\circ}C}$, the pinning direction could be aligned along the growth field axis, even in 0 field annealing.

Synthesis of the Fe2O3-CoO-Cr2O3-MnO2 pigments by co-precipitation method (공침법에 의한 Fe2O3-CoO-Cr2O3-MnO2계 안료 연구)

  • Choi, Soo-Nyong;Lee, Byung-Ha
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.6
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    • pp.264-271
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    • 2007
  • The inorganic pigments of $Fe_2O_3-CoO-Cr_2O_3-MnO_2$ were synthesized by the co-precipitation method. $FeCl_3,\;CoCl_2,\;CrCl_3\;and\;MnCl_2$ are used for the starting raw materials, and 2 N-KOH for precipitator. $MnCl_2$ is secured with 10 mole%, and 6 composition ratios are used with three ingredients to synthesize the pigments. The samples were calcined at $1350^{\circ}C/1.5h$. The resulting pigments were characterized by using XRD, FT-IR, SEM, and UV spectrophotometer. 6wt% pigments were applied to lime glaze and lime-barium glaze respectively firing at $1260^{\circ}C$ for oxidation atmosphere and $1240^{\circ}C$ for reduction one. The results of color analysis by using UV spectrophotometer showed black, bluish black and dark grayish green.

Synthesis and Characterization of Mn(Ⅲ) Chloro Complexes with Salen-Type Ligands (Mn(Ⅲ) Chloro-Salen형 리간드 착물의 합성과 특성)

  • Byeon, Jong Cheol;Han, Chung Hun;Park, Yu Cheol;Lee, Nam Ho;Baek, Jong Seok
    • Journal of the Korean Chemical Society
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    • v.46 no.3
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    • pp.194-204
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    • 2002
  • Aseries of novel salen-type complexes {[Mn(III)($L_{acn}$)CI]: n=1~11} containing CI- ion were obtained by reactions of the Mn(CH$_3$COO)$_2$· 4H$_2$O with the potentially tetradentate compartmental ligand {$H$_2$L_{acn}$} prepared by condensation the of one mole of diamine {ethylenediamine, 1,3-propnediamine, o-phenylenediamine and 2,2-dimethyl-1,3-propanediamine} with two moles of aldehyde {alicylaldehyde, 5-chloro-salicylaldehyde, 3,5-dichlorosalicylaldethyde, and 3,5-di-tert-butyl-2-hydroxy-benzaldehyde} in a methanol solution. The resulting salen-type lignds and their Mn(III) complexes were identified and characterized by elemental analysis, conductivity, themogravimetry and UV-VIS, IR and NMR spectroscopy.

Characteristics of the Angular-dependent Exchange Coupling Bias in Multilayer [Pt/Co]N-IrMn with Toward-in Plane Applied Fields (박막수직방향에서 면방향으로 회전하는 인가자기장에 대한 다층박막 [Pt/Co]N-IrMn의 교환바이어스의 각도의존특성)

  • Kim, S.S.;Yim, H.I.;Rhee, J.R.;Lee, S.S.;Hwang, D.G.
    • Journal of the Korean Magnetics Society
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    • v.18 no.4
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    • pp.142-146
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    • 2008
  • The angular dependence of the exchange bias($H_{ex}$) and coercivity($H_c$) in multilayer $[Pt/Co]_N-IrMn$ with applied measuring field rotated toward in-plane at angle $\theta$ from perpendicular-to-plane, has been measured. Multilayer films consisting of $Si/SiO_2/Ta(50)/Pt(4)/[Pt(15)/Co(t_{Co})]_N/IrMn(50)/Ta(50)(in\;{\AA})$ were prepared by magnetron sputtering under typical base pressure below $2{\times}10^{-8}$ Torr at room temperature. Magnetization measurements were performed on a vibrating sample magnetometer and extraordinary Hall voltage measurement systems after cooling from 550 K under a field of 2 kOe applied along the perpendicular to film direction. The hysteresis loop shifts from the origin not only along the field axis but also along the magnetization axis. $H_{ex}$ and $H_c$ show a $1/cos{\theta}$ and $1/|cos{\theta}|$ dependence on the angle($\theta$) between the applied measuring field and the perpendicular-film direction, respectively. This $1/cos{\theta}$ dependence can be accounted for by considering the angular dependence of strong out-of-plane magnetic anisotropy introduced during the field cooling.