• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권4호
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• pp.204-208
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• 2006

In this study, we investigated the ion energy distributions in a chlorine based inductively coupled plasma by quadrupole mass spectrometer with an electrostatic ion energy analyzer. Ion energy distributions are presented for various plasma parameters such as $BCl_3/Ar$ gas mixing ratio, RF power, and process pressure. As the $BCl_3/Ar$ gas mixing ratio and process pressure decreases, and RF power increases, the saddle-shaped structures is enhanced. The reason is that there are ionized energy difference between $BCl_3$ and Ar, change of plasma potential, alteration of mean free path. and variety of ion collision in the sheath.

• 천문학논총
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• 제30권2호
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• pp.499-502
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• 2015

Starburst galaxies have strong star formation activity and generate large scale outflows which eject a huge amount of gas mass. This process affects galaxy activity, and therefore, the detailed study of nearby starburst galaxies could provide valuable information for the study of distant ones. So far there have been only a few studies of galactic-scale molecular outflows due to the sensitivity limitation of telescopes. Our study provides two nearby examples, NGC 2146 and NGC 3628. We used Nobeyama Millimeter Array (NMA) CO(1-0) data, Chandra soft X-ray data, and NMA 3 mm data to study the kinematics of molecular outflows, their interaction with ionized outflows, and the star forming activity in the starburst region. We found that the gas ejected through molecular outflows is much more significant than that used to form stars.

• 반도체디스플레이기술학회지
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• 제15권1호
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• pp.70-75
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• 2016

GZO films prepared on ITO glasses were annealed at various temperatures in a vacuum condition to research the relationship between oxygen vacancies and optical properties. GZO films after annealing in a vacuum showed the various optical-chemical properties depending on the annealing temperatures and oxygen gas flow rate during the deposition. The oxygen vacancy of GZO film prepared by oxygen gas flows of 22 sccm increased with increasing the annealing temperatures, because of the extraction of oxygen by the annealing. But the intensity of photoluminance of GZO with 22 sccm decreased in accordance with the annealing temperature, because of the reduction of ionized charge carriers. The oxygen vacancy by the extraction of oxygen enhanced a depletion, so the widen depletion had the strong Schottky barrier and the PL intensity due to the low carrier density decreased.

• 천문학회보
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• 제36권1호
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• pp.53.1-53.1
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• 2011

We investigate the radial properties of the narrow-line region (NLR) in two radio-quiet quasars, PG1012+008 and PG1307+085, using the spectra obtained with the FORS1 at the Very Large Telescope. These high quality spectra with seeing < 0.6" enable us to extract seven two-pixel (0.4") spectra as a function of the radial distance from the accretion disk. In contrast to [OIII] narrow-band imaging, which can be contaminated by starbursts, shock-ionized gas, and tidal tails, we use emission-line diagnostic to determine the true size of the AGN-excited NLR. In this poster, we present the results based on the radial variance of $H{\beta}$ to [OIII] ${\lambda}5007$ ratio. For both targets, the [OIII] emission line exhibits a blue wing, suggesting an outflow of gas. In the case of PG1307+085, the blue wing disappears at the distance of 1". We will discuss the properties of the NLR in detail.

• 천문학회보
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• 제36권1호
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• pp.48.2-48.2
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• 2011

Using the newly commissioned Fiber-Multi-Object-Spectrograph at the Subaru telescope, we obtained near-IR spectra of a sample of 19 AGNs at 0.6 < z < 2.6, selected from the NOAO Deep Wide-Field Survey (NDWFS) Bootes field, in order to calibrate high-z black hole mass (MBH) estimators. MBHs are generally determined through the kinematics of ionized gas clouds around the black hole assuming virial equilibrium. The velocity profiles of $H{\beta}/H{\alpha}$, MgII and CIV are used to infer the gas kinematics of low-z, mid-z, and high-z quasars, respectively. However, the MBH based on MgII and CIV is not very well calibrated. We compare the $H{\alpha}$ - based MBH estimates from the new FMOS near-IR spectra, with the MgII-based MBH estimates from our existing optical spectra, and investigate the systematic differences.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권10호
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• pp.564-569
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• 2000

This paper analyzed single AlGaAs/GaAa heterojunction energy band structures by solving Schr dinger's equation and Poisson's equation self-consistently. Four different concentrations, positively ionized donors, holes in the valence band, free electrons in the conduction band and 2DEG are taken into account for the whole system. 2DEG from both of the structures are obtained and compared with the date available in the literatures. Differential capacitances are also calculated from the concentration profiles obtained to prove the validity of the single AlGaAs/GaAs system. Finally, theoretical predictions for both of 2DEGs and the capacitances show good agreement with the experimental data referred in this study. It has only an error of les than 10 percent.

• 열처리공학회지
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• 제14권3호
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• pp.151-154
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• 2001

$TiO_2$ thin film has wide application because of its high capacitanca, reflection, and good transmissivity in visible range. $TiO_2$ thin film can be made by thermal deposition method, reactive evaporation method, activated reactive evaporation(ARE) method. In the case of thermal deposition, the oxygen deficiency can occur because the melting point of Ti is very high. While in the case of reactive evaporation, high density $TiO_2$ can not be made, because reactive gas($O_2$) and evaporated material(Ti) are not fully combined, activated reactive evaporation, $TiO_2$ is easily deposited at lower gas pressure compared with reactive evaporation because the ionized reactive gas is made by plasma. Therefore, activated reactive evaporation is very useful to deposit the material having the high melting point. In this work, we formed $TiO_2$ thin film by activated reactive evaporation method. The surface of $TiO_2$ thin film was analyzed by X-ray photoelectron spectroscopy. The surface morphology which was analyzed by atomic force microscopy(AFM) shows that feature of the film surface is uniform. The dielectric capacitance, withstanding voltage were $600{\mu}F/cm^2$, 0.4V respectively. In further work, we can increase the withstanding voltage by improving the deposition parameter of substrates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 유기절연재료 방전 플라즈마연구회
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• pp.73-76
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• 2003

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients in pure Xenon gas by using two-term approximation of Boltzmann equation. Therefore, in this paper, we calculated the electron transport coefficients(W, $N{\cdot}D_L$ and $D_{L/{\mu}}$) in pure Xenon gas for range of E/N values from 0.01 ~ 500[Td] at the temperature was 300[K] and pressure was 1[Torr] by using multi-term approximation of the Boltzmann equation by Robson and Ness, The results of two-term and multi-term approximation of the Boltzmann equation has been compared with the experimental data by L. S. Frost and A. V. Phelps for a range of E/N.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.185-188
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• 2002

This paper describes the information for quantitative simulation of weakly ionized plasma. We should grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. In this paper, the drift velocity of electron in $SF_6+O_2$ mixture gas calculated for range E/N values l~900[Td] at the temperature is 300[$^{\circ}K$] and pressure is 1[Torr], using a set of electron collision cross sections determined by the authors and the values of drift velocity of electrons are obtained for TOF, PT, SST sampling method of Backward Prolongation by two term approximation Boltzmann equation method. It has also been used to predict swarm parameter using the values of cross section as input. The result of Boltzmann equation, the drift velocity of electrons, has been compared with pure $SF_6$, pure $O_2$ and mixture gas.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.773-778
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• 2001

In this dissertation the results of the combined experimental and theoretical studies designed to understand and predict the spatial growth and transport coefficients for electrons in SF$_{6}$ and SF$_{6}$-Ar mixtures have described. The ionization and attachment coefficients in pure SF$_{6}$ and SF$_{6}$-Ar mixtures have been calculated over the range of 10$_{6}$ molecule and for Ar atom proposed by other authors. The transport coefficients for electrons in (0.2%)SF$_{6}$-Ar and (0.5%)SF$_{6}$-Ar mixtures were measured by time-of-flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy. The results obtained in this work will provide valuable information on the fundamental haviors of electrons in weakly ionized gases and the role of electron attachment in the choice of better gases and unitary gas dielectrics or electro negative components in dielectric gas mixtures. gas mixtures.