• 제목/요약/키워드: Ionized

검색결과 582건 처리시간 0.027초

플라즈마를 이용한 신발소재의 환경 친화적인 접착 표면 처리(I) (Leather's Environment-friendly Adhesion Surface Treatment of shoe's material by Plasma)

  • 하선희;장유진;설수덕
    • 접착 및 계면
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    • 제6권2호
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    • pp.6-12
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    • 2005
  • 플라즈마는 고체, 액체, 기체와 더불어 제 4의 물질상태로 불리어지고 있는데, 기체의 일부가 전리된 가스상태이며 외부기장에 영향을 받고 전기를 통과시키면 발광하는 에너지가 높은 기체의 영역으로 정의된다. 인위적으로 에너지를 가하여 플라즈마를 발생시켜 많은 부분에서 새로운 첨단 연구가 활발하게 이루어지고 있으며, 많은 부분들이 우리의 생활에 들어와 있다. 플라즈마를 이용하여 고분자물의 표면을 처리하게 되면 몇 가지 장점이 있다. 먼저 플라즈마는 표면의 물성만을 변화시켜 고분자 본 물성을 유지시켜주고, 유기용제를 사용하지 않으며, 공정 운행 중 발생하는 폐기물이 없어 환경친화적이며, 상압 플라즈마의 경우 자동화 연속공정이 가능하다. 본 실험에서는 신발소재 고분자 재료의 상호 접착능력을 향상시키기 위하여 플라즈마를 사용하여 표면 개질을 시도하였고, 처리 시간과 사용한 가스의 유량에 따른 박리강도 시험을 통하여 접착력 향상을 확인하였고, 접촉각 측정과 SEM 측정을 통하여 고분자 표면 변화를 확인하였다.

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Poly(dimethylsiloxane) 변성 Maleated Polyethylene의 제조와 그 특성 (Preparation and Characteristics of Maleated Polyethylene Modified with Poly(dimethylsiloxane))

  • 이병철;강두환
    • 폴리머
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    • 제30권3호
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    • pp.224-229
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    • 2006
  • 3-Aminopropyldimethylethoxysilane (AS)과 methyliodide를 이용하여 4차 암모늄 실란을 제조하고 7,7,8,8-tetracyanoquinodimethane (TCNQ)과 methyliodide 및 요오드화 리튬을 이용하여 $Li^+TCNQ^-$를 제조하였다. 제조한 4차 암모늄 실란에 $Li^+TCNQ^-$를 가하여 4차 암모늄 실란-TCNQ adduct(ST)를 제조하고 이를 말단에 OH기를 갖는 poly(dimethylsiloxane) (PDMS)과 축합반응시켜 poly(dimethylsiloxane)-ST adduct(PST)를 제조하였다. PST 변성 말레화 폴리에틸렌(PST-g-MPE)은 말레화 폴리에틸렌과 PST를 internal mixer(Rheomix 600P)를 사용하여 용융중합으로 제조하였으며 여기에 카본블랙 (CB)의 함량을 변화시켜 PST-g-MPE/CB 및 MPE/CB 복합체를 제조하였다. 제조한 복합체의 열적 특성을 측정한 결과 유사한 열분해 온도를 나타내었다. PST-g-MPE/CB 복합체의 인장강도는 카본블랙의 함량 증가에 따라 $200\sim308MPa$로 증가하였으며 모폴로지를 측정한 결과 MPE/CB 복합체보다 PST-g-MPE/CB 복합체의 경우에서 카본블랙의 분산이 보다 더 잘 이루어졌음을 확인하였다.

DEVELOPMENT OF COMBIND WELDING WITH AN ELECTRIC ARC AND LOW POWER CO LASER

  • Lee, Se-Hwan;Massood A. Rahimi;Charles E. Albright;Walter R. Lempert
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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    • pp.176-180
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    • 2002
  • During the last two decades the laser beam has progressed from a sophisticated laboratory apparatus to an adaptable and viable industrial tool. Especially, in its welding mode, the laser offers high travel speed, low distortion, and narrow fusion and heat-affected zones (HAZ). The principal obstacle to selection of a laser processing method in production is its relatively high equipment cost and the natural unwillingness of production supervision to try something new until it is thoroughly proven. The major objective of this work is focused on the combined features of gas tungsten arc and a low-power cold laser beam. Although high-power laser beams have been combined with the plasma from a gas tungsten arc (GTA) torch for use in welding as early as 1980, recent work at the Ohio State University has employed a low power laser beam to initiate, direct, and concentrate a gas tungsten arcs. In this work, the laser beam from a 7 watts carbon monoxide laser was combined with electrical discharges from a short-pulsed capacitive discharge GTA welding power supply. When the low power CO laser beam passes through a special composition shielding gas, the CO molecules in the gas absorbs the radiation, and ionizes through a process known as non-equilibrium, vibration-vibration pumping. The resulting laser-induced plasma (LIP) was positioned between various configurations of electrodes. The high-voltage impulse applied to the electrodes forced rapid electrical breakdown between the electrodes. Electrical discharges between tungsten electrodes and aluminum sheet specimens followed the ionized path provided by LIP. The result was well focused melted spots.

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The Effect of Minocycline on Motor Neuron Recovery and Neuropathic Pain in a Rat Model of Spinal Cord Injury

  • Cho, Dong-Charn;Cheong, Jin-Hwan;Yang, Moon-Sul;Hwang, Se-Jin;Kim, Jae-Min;Kim, Choong-Hyun
    • Journal of Korean Neurosurgical Society
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    • 제49권2호
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    • pp.83-91
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    • 2011
  • Objective : Minocycline, a second-generation tetracycline-class antibiotic, has been well established to exert a neuroprotective effect in animal models and neurodegenerative disease through the inhibition of microglia. Here, we investigated the effects of minocycline on motor recovery and neuropathic pain in a rat model of spinal cord injury. Methods : To simulate spinal cord injury, the rats' spinal cords were hemisected at the 10th thoracic level (T10). Minocycline was injected intraperitoneally, and was administered 30 minutes prior surgery and every second postoperative day until sacrifice 28 days after surgery. Motor recovery was assessed via the Basso-Beattie-Bresnahan test Mechanical hyperalgesia was measured throughout the 28-day post -operative course via the von Frey test Microglial and astrocyte activation was assessed by immunohistochemical staining for ionized calcium binding adaptor molecule 1 (lba1) and glial fibrillary acidic protein (GFAP) at two sites: at the level of hemisection and at the 5th lumbar level (L5). Results : In rats, spinal cord hemisection reduced locomotor function and induced a mechanical hyperalgesia of the ipsilateral hind limb. The expression of lba1 and GFAP was also increased in the dorsal and ventral horns of the spinal cord at the site of hemisection and at the L5 level. Intraperitoneal injection of minocycline facilitated overall motor recovery and attenuated mechanical hyperalgesia. The expression of lba1 and GFAP in the spinal cord was also reduced in rats treated with minocycline. Conclusion : By inhibiting microglia and astrocyte activation, minocycline may facilitate motor recovery and attenuate mechanical hyperalgesia in individuals with spinal cord injuries.

Multicrystalline Silicon Texturing for Large Area CommercialSolar Cell of Low Cost and High Efficiency

  • Dhungel, S.K.;Karunagaran, B.;Kim, Kyung-Hae;Yoo, Jin-Su;SunWoo, H.;Manna, U.;Gangopadhyay, U.;Basu, P.K.;Mangalaraj, D;Yi, J.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.280-284
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    • 2004
  • Multicrystalline silicon wafers were textured in an alkaline bath, basically using sodium hydroxide and in acidic bath, using mainly hydrofluoric acid (HF), nitric acid $(HNO_3)$ and de-ionized water (DIW). Some wafers were also acid polished for the comparative study. Comparison of average reflectance of the samples treated with the new recipe of acidic solution showed average diffuse reflectance less than even 5 percent in the optimized condition. Solar cells were thus fabricated with the samples following the main steps such as phosphorus doping for emitter layer formation, silicon nitride deposition for anti-reflection coating by plasma enhanced chemical vapor deposition (PECVD) and front surface passivation, screen printing metallization, co-firing in rapid thermal processing (RTP) Furnace and laser edge isolation and confirmed >14 % conversion efficiency from the best textured samples. This isotropic texturing approach can be instrumental to achieve high efficiency in mass production using relatively low cost silicon wafers as starting material.

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급성 치성감염 병소에서 국소마취 중 유발된 과환기 -증례 보고- (Hyperventilation During Local Anesthesia in Acute Odontogenic Infectious Lesion - Report of two cases -)

  • 유재하;김현실;백성흠;유태민;이지웅;정원균
    • 대한치과마취과학회지
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    • 제2권2호
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    • pp.107-113
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    • 2002
  • Hyperventilation is defined as ventilation in excess of that required to maintain normal blood $PaO_2$ and $PaCO_2$. It is produced by several distinct causes: anxiety, respiratory alkalosis, increased blood catecholamine levels, and a decrease in the level of the ionized calcium in the blood. The dental fears about acute pain, needle, drill and dental surgery lead to the severe anxiety and increased blood catecholamine level. Therefore, the most dental patient should be cared gently as the stress reduction protocol. In spite of the gentle care, two cases of hyperventilation were occurred during local anesthesia for incision and drainage of acute odontogenic infectious lesions. We suggest that the dental patients with acute odontogenic infection must be attention for the manifestation of hyperventilation, especially in the medically compromised conditions.

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Analysis of Instability Mechanism under Simultaneous Positive Gate and Drain Bias Stress in Self-Aligned Top-Gate Amorphous Indium-Zinc-Oxide Thin-Film Transistors

  • Kim, Jonghwa;Choi, Sungju;Jang, Jaeman;Jang, Jun Tae;Kim, Jungmok;Choi, Sung-Jin;Kim, Dong Myong;Kim, Dae Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권5호
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    • pp.526-532
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    • 2015
  • We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}=13V$and $V_{DS}=13V$), the parallel shift of the transfer curve into a negative $V_{GS}$ direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (${\Delta}V_T$), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ${\Delta}V_T$ were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy ($V{_O}^{2+}$). In addition, it was also confirmed that the wider channel width corresponds with more negative ${\Delta}V_T$. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.

Three-Dimensional Structure of Star-Forming Regions in NGC 6822 Hubble V

  • Lee, Hye-In;Oh, Heeyoung;Le, Huynh Anh N.;Pak, Soojong;Lee, Sungho;Mace, Gregory;Jaffe, Daniel T.;Nguyen-Luong, Quang;Tatematsu, Ken'ichi
    • 천문학회보
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    • 제42권2호
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    • pp.43.3-43.3
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    • 2017
  • NGC 6822 is a dwarf irregular galaxy in the Local Group and it is located in 500 kpc, further than the Large Magellanic Cloud and the Small Magellanic Cloud. Therefore, we can study star-forming processes by local condition in NGC 6822 instead of tidal force of the Galactic gravitational field. Hubble V is the brightest of several H II complexes in this galaxy. We observed Hubble V by using IGRINS attached on the 2.7 m telescope at the McDonald Observatory in Texas, US in May 2016. We performed a spectral mapping of $15^{{\prime}{\prime}}{\times} 7^{{\prime}{\prime}}$area on H and K bands, and detected emission lines of bright $Br{\gamma}\;{\lambda}2.1661{\mu}m$ and weak He I ${\lambda}2.0587{\mu}m$. Molecular hydrogen lines of 1-0S(1) ${\lambda}2.1218{\mu}m$, 2-1 S(1) ${\lambda}2.2477{\mu}m$, and 1-0 S(0) ${\lambda}2.2227{\mu}m$ was also detected. These emission lines show the structure of an ionized core and excited surface of clouds by far-ultraviolet photons, photodissociation region (PDR). We present three-dimensional maps of emission line distributions through multi slit scanning data and compare these results with the previous study. This presentation shows the physical structure of the star-forming regions and we discuss a PDR model and an evolution of Hubble V complex.

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유한요소법을 이용한 실리콘 기판에서의 공핍 영역 해석 (Depletion region analysis of silicon substrate using finite element methods)

  • 변기량;황호정
    • 대한전자공학회논문지SD
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    • 제39권1호
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    • pp.1-11
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    • 2002
  • 본 논문에서는 나노영역의 고해상도 도핑 농도 측정 장비 개발을 위해 공핍 근사 조건하 복잡한 계산 영역에서 공핍 영역을 간단히 계산할 수 있는 방법을 개발하였다. 개발된 공핍영역 계산 방법은 유한요소법을 이용한 적응분할 포아송 방정식 해석기를 사용하여 대전된 영역의 경계에서 전위가 0인 등고선과 일치하도록 하여 계산하는 방법이다. 이 방법의 타당성을 검증하기 위해 계산된 대전영역 및 전위분포가 공핍영역의 정의에 맞는지 확인하였으며, pn 접합에서의 공핍영역 깊이 및 MOS 구조에서 정전용량을 계산하여 비교해 본 결과 이론치와 정확히 일치함을 알 수 있었다. 이러한 Pn 접합 및 MOS 에서 공핍영역 계산 검증을 바탕으로 나노영역의 탐침을 장착한 SCM에서 전압에 따른 실리콘 내의 공핍영역 모양과 전위를 분석하여, 정전용랑 모델링을 하였으며, 이로부터 CV 곡선과 SCM의 출력인 dC/dV곡선을 계산하였다.

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se2 Thin-film Solar Cell Measured at Different Irradiation Conditions

  • Lee, Kyu-Seok;Chung, Yong-Duck;Park, Nae-Man;Cho, Dae-Hyung;Kim, Kyung-Hyun;Kim, Je-Ha;Kim, Seong-Jun;Kim, Yeong-Ho;Noh, Sam-Kyu
    • Journal of the Optical Society of Korea
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    • 제14권4호
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    • pp.321-325
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    • 2010
  • We analyze the current density - voltage (J - V) curve of a Cu(In,Ga)$Se_2$ (CIGS) thin-film solar cell measured at different irradiation power densities. For the solar-cell sample investigated in this study, the fill factor and power conversion efficiency decreased as the irradiation power density (IPD) increased in the range of 2 to 5 sun. Characteristic parameters of solar cell including the series resistance ($r_s$), the shunt resistance ($r_{sh}$), the photocurrent density ($J_L$), the saturation current density ($J_s$) of an ideal diode, and the coefficient ($C_s$) of the diode current due to electron-hole recombination via ionized traps at the p-n interface are determined from a theoretical fit to the experimental data of the J - V curve using a two-diode model. As IPD increased, both $r_s$ and $r_{sh}$ decreased, but $C_s$ increased.