• Nuclear Engineering and Technology
• /
• v.29 no.6
• /
• pp.459-467
• /
• 1997

The steady-state behavior of recycling neutral atoms in a tokamak edge region has been analyzed through a two-dimensional Monte Carlo simulation. A particle tracking algorithm used in earlier research on the neutral particle transport is applied to this Monte Carlo simulation in order to perform more accurate calculations with the EDGETRAN code which was previously developed for a two-dimensional edge plasma transport in the authors' laboratory. The physical model of neutral recycling includes charge-exchange and ionization interactions between plasmas and neutral atoms. The reflection processes of incident particles on the device wall are described by empirical formulas. Calculations for density, energy, and velocity distributions of neutral deuterium-tritium atoms have been carried out for a medium-sized tokamak with a double-null configuration based on the KT-2 conceptual design. The input plasma parameters such as plasma density, ion and electron temperatures, and ion fluid velocity are provided from the EDGETRAN calculations. As a result of the present numerical analysis, it is noticed that a significant drop of the neutral atom density appears in the region of high plasma density and that the similar distribution of neutral energy to that of plasma ions is present as frequently reported in other studies. Relations between edge plasma conditions and the neutral recycling behavior are discussed from the numerical results obtained herein.

• Journal of the Korean Vacuum Society
• /
• v.14 no.1
• /
• pp.17-23
• /
• 2005

Glow discharge mass spectrometry(GDMS) was used to determine the impurity concentrations of the deposited Cu films and the 6N Cu target. Cu films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -50 V using a non-mass separated ion beam deposition method. Since do GDMS has a little difficulty to apply to thin films because of the accompanying non-conducting substrate, we have used an aluminum foil to cover the edge of the Cu film in order to make an electrical contact of the Cu film deposited on the non-conducting substrate. As a result, the Cu film deposited at the substrate bias voltage of -50 V showed lower impurity contents than the Cu film deposited without the substrate bias voltage although both the Cu films were contaminated during the deposition. It was found that the concentration change of each impurity in the Cu films by applying the negative substrate bias voltage is related to the difference in their ionization potentials. The purification effect by applying the negative substrate bias voltage might result from the following reasons: 1) Penning ionization and an ionization mechanism proposed in the present study, 2) difference in the kinetic energy of accelerated Cu+ ions toward the substrate with/without the negative substrate bias voltage.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 1999.11a
• /
• pp.53-57
• /
• 1999

To investigate the discharge dynamics of alternating current plasma display panel (ACPDP), we measured the spatio-temporally resolved VUV and IR emission by an intensified charge coupled device (CCD). The breakdown beings around the anode inner edge and moves towards the cathode surface. As the ionization intensifies in front of the cathode surface, another emission region appears on the anode surface. While the anode side emission does not move but grows, the cathode side emission moves out and spreads over the entire cathode surface. The discharge dynamics emission by a 2 dimensional numerical simulation suggests that a cathode-directed streamer formation play an important role.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.267-267
• /
• 2012

최근 국내 반도체 장비 업체들에 의해서 차세대 반도체용 450 mm 웨이퍼 공정용 장비 개발이 진행 중에 있다. 반도체 산업은 계속해서 반도체 칩의 크기를 작게 하고, 웨이퍼 크기를 늘리면서 웨이퍼 당 칩수를 증가시켜 생산성을 향상해오고 있다. 현재 300 mm 웨이퍼에서 450 mm 웨이퍼를 도입하게 되면, 생산성 뿐만 아니라 30%의 비용절감과 50%의 cycle-time 단축이 기대되고 있다. 장비에 대한 이해와 공정에 대한 해석 능력을 위해 비용과 시간이 많이 들기 때문에 최근 컴퓨터를 활용한 수치 모델링이 진행되고 있다. 또한, 수치 모델링은 실험 결과와의 비교가 필수적이다. 본 연구에서는 450 mm 웨이퍼 공정용 장비의 전자밀도를 cut off probe를 통해 100 mTorr에 서 Ar 플라즈마를 파워에 따라 측정했다. 13.56 MHz 200 W, 500 W, 1,000 W로 입력 파워가 증가하면서 웨이퍼 중심에서 $6.0{\times}10^9#/cm^3$, $1.35{\times}10^{10}#/cm^3$, $2.4{\times}10^{10}#/cm^3$로 증가했다. 450 mm 웨이퍼 영역에서 전자 밀도의 불균일도는 각각 10.31%, 3.24%, 4.81% 였다. 또한, 이 450 mm 웨이퍼용 CCP 장비를 축대칭 2차원으로 형상화하고, 전극에 13.56 MHz를 직렬로 연결된 blocking capacitor ($1{\times}10^{-6}$ F/$m^2$)를 통해 인가할 수 있도록 상용 유체 모델 소프트웨어(CFD-ACE+, EXI corp)를 이용하여 계산하였다. 주요 전자-중성 충돌 반응으로 momentum transfer, ionization, excitation, two-step ionization을 고려했고, $Ar^+$와 $Ar^*$의 표면 재결합 반응은 sticking coefficient를 1로 가정했다. CFD-ACE+의 CCP 모델을 통해 Poisson 방정식을 풀어서 sheath와 wave effect를 고려하였다. Stochastic heating을 고려하지 않았을 때, 플라즈마 흡수 파워가 80 W, 160 W, 240 W에서 실험 투입 전력 200 W, 500 W, 1,000 W일 때와 유사한 반경 방향의 플라즈마 밀도 분포를 보였다. 200 W, 500 W, 1,000 W일 때의 전자밀도 분포는 수치 모델링과 전 범위에서 각각 10%, 3%, 2%의 오차를 보였다. 450 mm의 전극에 13.56 MHz의 전력을 인가할 때, 파워가 증가할수록 전자밀도의 최대값의 위치가 웨이퍼 edge에서 중심으로 이동하고 있음을 실험과 모델링을 통해 확인할 수 있었다.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.10 no.12
• /
• pp.2258-2263
• /
• 2006

In this parer, hump characteristics of short-channel nMOSFETs induced by moistures of the ILD(inter-layer dielectric) layer in the shallow trench isolation (STI) process are investigated and the method for hump suppression is proposed Using nMOSFETs with various types of the gate and a measurement of TDS-APIMS (Thermal Desorption System-Atmospheric Pressure ionization Mass Spectrometry), hump characteristics were systematically analyzed and the systemic analysis based hump model was presented; the ILD layer over poly-Si gate of nMOSFET generates moistures, but they can't diffuse out of the SiN layer due to the upper SiN layer. Consequently, they diffuses into the edge between the gate and STI and induces short-channel hump. In order to eliminate moisture in the ILD layer by out-gassing method, the annealing process prior to the deposition of the SiN layer was carried out. As the result, short-channel humps of the nMOSFETs were successfully suppressed.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.66 no.4
• /
• pp.659-665
• /
• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.

• Progress in Medical Physics
• /
• v.20 no.4
• /
• pp.191-198
• /
• 2009

In this study, we evaluated an edge detector for small-beam dosimetry. We measured the dose linearity, dose rate dependence, output factor, beam profiles, and percentage depth dose using an edge detector (Model 1118 Edge) for 6-MV photon beams at different field sizes and depths. The obtained values were compared with those obtained using a standard volume ionization chamber (CC13) and photon diode detector (PFD). The dose linearity results for the three detectors showed good agreement within 1%. The edge detector had the best linearity of ${\pm}0.08%$. The edge detector and PFD showed little dose rate dependency throughout the range of 100~600 MU/min, while CC13 showed a significant discrepancy of approximately -5% at 100 MU/min. The output factors of the three detectors showed good agreement within 1% for the tested field sizes. However, the output factor of CC13 compared to the other two detectors had a maximum difference of 21% for small field sizes (${\sim}4{\times}4\;cm^2$). When analyzing the 20~80% penumbra, the penumbra measured using CC13 was approximately two times wider than that using the edge detector for all field sizes. The width measured using PFD was approximately 30% wider for all field sizes. Compared to the edge detector, the 10~90% penumbras measured using the CC13 and PFD were approximately 55% and 19% wider, respectively. The full width at half maximum (FWHM) of the edge detector was close to the real field size, while the other two detectors measured values that were 8~10% greater for all field sizes. Percentage depth doses measured by the three detectors corresponded to each other for small beams. Based on the results, we consider the edge detector as an appropriate small-beam detector, while CC13 and PFD can lead to some errors when used for small beam fields under $4{\times}4\;cm^2$.

• Journal of Powder Materials
• /
• v.14 no.3 s.62
• /
• pp.157-164
• /
• 2007

An electron energy loss spectroscopy (EELS) instrument attached on transmission electron microscopy (TEM) becomes a powerful and analytical tool for extracting the noble information of materials using the enhancement of TEM images, elemental analysis, elemental or chemical mapping images, electron energy loss near edge structure (ELNES), and extended energy-loss fine structure (EXELFS). In this review, the principle and applications of EELS which is widely used in material, life, and electronic sciences were introduced.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.2C no.5
• /
• pp.246-252
• /
• 2002

Two-dimensional steady state simulations of planar type radio frequency inductively coupled plasma (RFICP) have been performed. The characteristics of RFICP were investigated in terms of power transfer efficiency, equivalent circuit analysis, spatial distribution of plasma density and electron temperature. Plasma density and electron temperature were determined from the equations of ambipolar diffusion and energy conservation. Joule heating, ionization, excitation and elastic collision loss were included as the source terms of the electron energy equation. The electromagnetic field was calculated from the vector potential formulation of ampere's law. The peak electron temperature decreases from about 4eV to 2eV as pressure increases from 5 mTorr to 100 mTorr. The peak density increases with increasing pressure. Electron temperatures at the center of the chamber are almost independent of input power and electron densities linearly increase with power level. The results agree well with theoretical analysis and experimental results. A single turn, edge feeding antenna configuration shows better density uniformity than a four-turn antenna system at relatively low pressure conditions. The thickness of the dielectric window should be minimized to reduce power loss. The equivalent resistance of the system increases with both power and pressure, which reflects the improvement of power transfer efficiency.

• Journal of the Korean Society for Aeronautical & Space Sciences
• /
• v.45 no.7
• /
• pp.574-580
• /
• 2017

Static dischargers should be installed on air vehicle to emit a static electricity during flight. Especially, If static electricity is not removed by static discharger on the air vehicle, it makes ionization and corona effect on the edge of antenna and wing. Those phenomenon bring about performance degradation for radio communication and equipment operation. In this paper, the conditions such as climate, air vehicle's speed and frontal area were analyzed to design static dischargers. As a result, the static dischargers would be optimally designed for air vehicles and the performance of the static dischargers can verify according to the functional experiment. Therefore the result of this research will be used to make static discharger installation design for new air vehicle that have different size and mission.