• Journal of the Korean Ceramic Society
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• v.14 no.3
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• pp.163-168
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• 1977

As a wet chemical drying process "hot petroleum drying method" was applied and developed for preparing uniformly fine oxide powder with high purity and sinterreactivity. Using this method solution of sulfates was dried in hot petroleum bath (~17$0^{\circ}C$) to sulfate powder from which corresponding mullite doped by Fe3+ ion was formed. Particle size, shape, decomposition by heat, and phase identification of sulfate andoxide powders determined by DTA, TGA, X-ray diffraction, analysis and electron microscopy: sulfate powder prepared by this drying method is an intimate mixture of the amorphous form of uniformly and finely distributed spherical particles (0.05-0.1$\mu$). Mullitization with the sulfate powder occurs at 110$0^{\circ}C$ in air. The morphology of mullite particle made by firing the sulfate powder at 135$0^{\circ}C$ in oxygen atmosphere is granular of 0.1-0.3$\mu$ in size. This drying process proved to be a very effective method for preparing fine, homogeneous, and highly sinterreactive multicomponent oxide powder without conventional ceramic process of mixing, milling, and granulating. This process can be also applied for preparing electronic ceramic materials which are requisite for high purity and homogeneity.mogeneity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.248-248
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• 2010

리튬이온 2차전지의 대체 양극 후보 물질인 $LiFePO_4$를 합성하기 위하여 출발원료로 $Li_2CO_3$, $Fe_2O_3$, $NH_4H_2PO_4$를 사용하여 볼밀 방법으로 혼합 분쇄한 후 열처리를 실시하였다. 합성 시에 3가 Fe를 2가로 환원시키기 위하여 $C_{12}H_{22}O_{11}$(흑설탕)을 출발원료와 함께 5 ~ 12 wt%로 나눠서 첨가하였다. 합성 후 XRD로 결정구조의 양질성을 확인하였고. FE-SEM으로 나노미터 크기의 구형 입자를 관찰하였다. XRF를 이용하여 3 ~ 10 wt%의 탄소 잔량을 확인하였다. 전기화학적 특성을 충 방전시험기로 평가한 결과, 8wt%의 탄소원을 첨가한 $LiFePO_4$에서 가장 좋은 수명 특성을 얻었고, 최대 145 mAh/g의 방전용량을 얻었다.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.179-183
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• 2000

For a ground plane in high-temperature superconducting ramp-edge junction devices, YBa$_2$Cu$_3$O$_{7-{\delta}}$/SrTiO$_3$/YBa$_2$Cu$_3$O$_{7-{\delta}}$ multilayer structures were fabricated using pulsed laser deposition and ECR ion milling. Various process parameters were adjusted to enhance the device characteristics. By etching the STO layer to form a tapered edge of about 15$^{\circ}$ and in-situ RF plasma treatment of bottom YBCO surface prior to deposition of top YBCO, the top-to-bottom YBCO showed T$_c$ of 75${\sim}$80 K and I$_c$ of about 40 mA through holes. It was found that the deposition of bottom YBCO at a reduced laser repetition rate of 1Hz increased the T$_c$ of top YBCO to 79.9 K. The resistivity of 570 layer was about 10$^6$ ${\Omega}$cm at 60 K, which ensures good electrical isolation between successive YBCO layers.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.645-648
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• 2010

The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by the Czochralski method were studied using focused ion beam (FIB) milling, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Epitaxial growth was carried out in a horizontal reactor at atmospheric pressure. The p-type Si wafers were loaded into the reactor at about $800^{\circ}C$ and heated to about $1150^{\circ}C$ in $H_2$. An epitaxial layer with a thickness of $4{\mu}m$ was grown at a temperature of 1080-$1100^{\circ}C$. Octahedral void defects, the inner walls of which were covered with a 2-4 nm-thick oxide, were surrounded mainly by $\{111\}$ planes. The formation of octahedral void defects was closely related to the agglomeration of vacancies during the growth process. Cross-sectional TEM observation suggests that the carbon impurities might possibly be related to the formation of oxide defects, considering that some kinds of carbon impurities remain on the Si surface during oxidation. In addition, carbon and oxygen impurities might play a crucial role in the formation of void defects during growth of the epitaxial layer.

• Progress in Superconductivity
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• v.1 no.2
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• pp.146-150
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• 2000

Step edge Josephson junctions in c-axis oriented $YBa_2Cu_3O_7$ films were fabricated on $CeO_2$ buffered sapphire substrates. The step angle was controlled in the wide range of $20^{\circ}\sim75^{\circ}$ by the Ar ion milling technique. I-V curves of junction fabricated on the thickness ratio of $\sim$0.8 and the step angle of $35^{\circ}$ were exhibited RSJ-like behavior with $I_CR_N$ product of $\sim250{\mu}A$ and critical current density of $\sim2\times10^4A/cm^2$ at 77 K. Critical current of step edge junction was increased linearly with decreasing temperature but the normal resistance was almost constant. Total samples of step edge Josephson junction was satisfied a scaling behavior of $I_CR_N{\propto}(J_C)^{0.5}$.

• Applied Microscopy
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• v.29 no.4
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• pp.493-498
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• 1999

With increasing demand for fast and reliable, yet economical data storage devices, the role of optical disk technology is becoming more important. In recent years, advanced laser technology combined with new materials has given the competitive edge over the traditional magnetic memory devices both in memory capacity and reliability of data retrieval. Continuing effort is being put into developing smaller and more complex structures for optical disks to increase their memory density. Characterization of such multilayered structure requires not only high spatial resolution for observation but also laborious specimen preparation. In this paper, the method of preparing optical disk specimens for TEM characterization is described in detail. The microstructural features in optical disks observed by TEM are also discussed.

• Journal of Magnetics
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• v.8 no.2
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• pp.89-92
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• 2003

The tunneling magnetoresistance (TMR) of a ramp-edge type junction with SrTiO$_3$barrier layer has been stud-ied. The samples with a structure of glass/NiO(600${\AA}$)/Co(100${\AA}$)/SrTiO$_3$(400 ${\AA}$)/SrTiO$_3$(20-100${\AA}$)/NiFe(100${\AA}$) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics were obtained from a ramp-type tunneling junctions, having the dominant difference between two different external magnetic fields (${\pm}$100 Oe) perpendicular to the junction edge line. In the SrTiO$_3$ barrier thickness of 40${\AA}$, the TMR was 52.7% at a bias voltage of -50 mV The bias voltage dependence of resistance and TMR in a ramp-type tunneling junction was similar with those of the layered TMR junction.

• Journal of the Optical Society of Korea
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• v.16 no.3
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• pp.305-312
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• 2012

We numerically demonstrate the performance of a plasmonic lens composed of an array of nanoslits perforated on thin metallic film with slanted cuts on the output surface. Embedding Kerr nonlinear material in nanoslits is employed to modulate the output beam. A two dimensional nonlinear-dispersive finite-difference time-domain (2D N-D-FDTD) method is utilized. The performance parameters of the proposed lens such as focal length, full-width half-maximum, depth of focus and the efficiency of focusing are investigated. The structure is illuminated by a TM-polarized plane wave and a Gaussian beam. The effect of the beam waist of the Gaussian beam and the incident light intensity on the focusing effect is explored. An exact formula is proposed to derive electric field E from electric flux density D in a Kerr-Dispersive medium. Surface plasmon (SPs) modes and Fabry-Perot (F-P) resonances are used to explain the physical origin of the light focusing phenomenon. Focused ion beam milling can be implemented to fabricate the proposed lens. It can find valuable potential applications in integrated optics and for tuning purposes.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.119-123
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• 2005

Lithium titanium oxide as anode material for energy storage prepared by novel synthesis method. Li$_{4}$Ti$_{5}$O$_{12}$ based spinel-framework structures are of great interest material for lithium-ion batteries. We describe here Li$_{4}$Ti$_{5}$O$_{12}$ a zero-strain insertion material was prepared by novel sol-gel method and by high energy ball milling (HEBM) of precursor to from nanocrystalline phases. According to the X-ray diffraction and scanning electron microscopy analysis, uniformly distributed Li$_{4}$ Ti$_{5}$O$_{12}$ particles with grain sizes of 100nm were synthesized. Lithium cells, consisting of Li$_{4}$ Ti$_{5}$O$_{12}$ anode and lithium cathode showed the 173 mAh/g in the range of 1.0 $\~$ 3.0 V. Furthermore, the crystalline structure of Li$_{4}$ Ti$_{5}$O$_{12}$ didn't transform during the lithium intercalation and deintercalation process.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1989-1991
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• 2005

Lithium titanium oxide as anode material for energy storage prepared by novel synthesis method. $Li_4Ti_5O_{12}$ based spinel-framework structures are of great interest material for lithium-ion batteries. We describe here $Li_4Ti_5O_{12}$ a zero-strain insertion material was prepared by novel sol-gel method and by high energy ball milling (HEBM) of precursor to from nanocrystalline phases. According to the X-ray diffraction and scanning electron microscopy analysis, uniformly distributed $Li_4Ti_5O_{12}$ particles with grain sizes of 100nm were synthesized. Lithium cells, consisting of $Li_4Ti_5O_{12}$ anode and lithium cathode showed the 173 mAh/g in the range of $1.0{\sim}3.0V$. Furthermore, the crystalline structure of $Li_4Ti_5O_{12}$ didn't transfer during the lithium intercalation and deintercalation process.