• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.124-128
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• 2018

Titanium doping is employed to enhance the structural strength of a high-Ni layered cathode material in lithium ion batteries during high temperature cycling. After Ti-doping, the external morphology remains similar, but the lattice parameters of the layered structure are slightly shifted toward larger values. With application of the prepared materials as cathodes in lithium-ion batteries, the initial capacities are similar but the cycling performance at $25^{\circ}C$ is enhanced by Ti-doping. During high temperature cycling at $60^{\circ}C$, furthermore, highly improved capacity retention is achieved with the Ti-doped material (95% of initial capacity at 50th cycles), while cycle fading is accelerated with the bare electrode. This enhancement is attributed to better retention of the compressive strength of the particles and retarded crack formation within the particles. In addition, impedance increase is reduced in the Ti-doped electrode, which is attributed to an improvement in the structural strength of the high-Ni cathode material with Ti-doping.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.140-140
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• 2010

Non-mass analyzed ion shower doping (ISD) technique with a bucket-type ion source or mass-analyzed ion implantation with a ribbon beam-type has been used for source/drain doping, for LDD (lightly-doped-drain) formation, and for channel doping in fabrication of low-temperature poly-Si thin-film transistors (LTPS-TFT's). We reported an abnormal activation behavior in boron doped poly-Si where reverse annealing, the loss of electrically active boron concentration, was found in the temperature ranges between $400^{\circ}C$ and $650^{\circ}C$ using isochronal furnace annealing. We also reported reverse annealing behavior of sequential lateral solidification (SLS) poly-Si using isothermal rapid thermal annealing (RTA). We report here the importance of implantation conditions on the dopant activation. Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.25-30
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• 2000

Ion mass doping method has been implemented for the fabrication of large area electronic devices such as TFT-LCD. In this work, the effect of ion mass doping on the velocity and the behavior of MILC was investigated. When amorphous silicon was either doped or bombarded by accelerated ions, MILC velocity was reduced by over 50% and the front edge of MILC became coarse. In order to analyze the dependence of silicon film's properties on ion mass doping, ultraviolet reflectance and sulfate roughness were investigated. Both the velocity and the behavior of MILC were found to be related with the increase of surface roughness by ion bombardment.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.5
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• pp.45-51
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• 1997

Low temperature activation of dopants which were doped using ion mass doping system in amorphous silicon(a-Si) thin films was investigated. With a 20.angs.-thick Ni film on top of the a-Si thin film, the activation temperature of dopants lowered to 500.deg. C. When the doping was performaed after the deposition of Ni thin film on the a-Si thin films (post-doping), the activation time was shorter than that of dopants mass, the activation time of the dopants doped by pre-doping method increased. It turned NiSi2 formation, while the decrease of activation time was mainly due to the enhancement of the NiSi2 formation by mixing of Ni and a-Si at the interface of Ni and a -Si thin during the ion doping process.

• Resources Recycling
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• v.16 no.5
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• pp.46-50
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• 2007

Blue phosphor calcium aluminate, $CaAl_2O_4:Eu^{2+}$ co-doped with $Nd^{3+}$ was prepared by solid state synthesis method. Phosphor materials with 1 mol% $Eu^{2+}$ and varying compositions of $Nd^{3+}$ show high brightness and long persistent luminescence. The synthesized phosphor materials were investigated by powder x-ray diffraction (XRD), SEM, TEM, photoluminescence excitation and emission studies. Broad band UV excited luminescence of the $CaAl_2O_4:Eu^{2+}:Nd^{3+}$ was observed in the blue region (${\lambda}_{max}=440\;nm$) due to transitions from the $4f^65d^1$ to the $4f^7$ configuration of the $Eu^{2+}$ ion. $Nd^{3+}$ ion doping in the phosphor results in long afterglow phosphorescence when the excitation light is cut off.

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.24-31
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• 2005

Ion shower doping with a main ion source of $P_2H_x$ using a source gas mixture of $PH_3/H_2$ was conducted on excimer-laser-annealed (ELA) poly-Si.The crystallinity of the as-implanted samples was measured using a UV-transmittance. The measured value using UV-transmittance was found to correlate well with the one measured using Raman Spectroscopy. The sheet resistance decreases as the acceleration voltage increases from 1kV to 15kV at the moderate doping conditions. It, however, increases as the acceleration voltage increases under the severe doping conditions. The reduction in carrier concentration due to electron trapping at uncured damage after activation annealing seems to be responsible for the rise in sheet resistance. Three different annealing methods were investigated in terms of dopant-activation and damage-recovery, such as furnace annealing, excimer laser annealing, and rapid thermal annealing, respectively.

• Journal of Hydrogen and New Energy
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• v.26 no.5
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• pp.416-422
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• 2015

Lithium Ion capacitor (LIC) is a new storage device which combines high power density and high energy density compared to conventional supercapacitors. LIC is capable of storing approximately 5.10 times more energy than conventional EDLCs and also have the benefits of high power and long cycle-life. In this study, LICs are assembled with activated carbon (AC) cathode and pre-doped graphite anode. Cathode material of natural graphite and artificial graphite kinds of MAGE-E3 was selected as the experiment proceeds. Super-P as a conductive agent and PTFE was used as binder, with the graphite: conductive agent: binder of 85: 10: 5 ratio of the negative electrode was prepared. Lithium doping condition of current density of $2mA/cm^2$ to $1mA/cm^2$, and was conducted by varying the doping. Results Analysis of Inductively Coupled Plasma Spectrometer (ICP) was used and a $1mA/cm^2$ current density, $2mA/cm^2$, when more than 1.5% of lithium ions was confirmed that contained. In addition, lithium ion doping to 0.005 V at 10, 20 and $30^{\circ}C$ temperature varying the voltage variation was confirmed, $20^{\circ}C$ cell from the low internal resistance of $4.9{\Omega}$ was confirmed.

• 한국전기화학회:학술대회논문집
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• 2001.04a
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• pp.39-39
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• 2001

• Current Photovoltaic Research
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• v.2 no.3
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• pp.120-123
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• 2014

Thermal doping method using furnace is generally used for solar-cell wafer doping. It takes a lot of time and high cost and use toxic gas. Generally selective emitter doping using laser, but laser is very high equipment and induce the wafer's structure damage. In this study, we apply atmospheric pressure plasma for solar-cell wafer doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (1 kHz ~ 100 kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer (120 ohm/square). SIMS (Secondary Ion Mass Spectroscopy) are used for measuring wafer doping depth and concentration of phosphorus. We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.