• Journal of Convergence for Information Technology
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• v.10 no.6
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• pp.28-34
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• 2020

A structure in which GaAs and AlGaAs epilayers are formed with a metal organic chemical vapor deposition equipment on a GaAs wafer similar to the structure of making a vertical cavity surface emitting laser is used. Photonic Quantum Ring (PQR) devices that are naturally generated by 3D resonance are manufactured by chemically assisted ion beam etching technology, which is a dry etching method. A new technology that can be fabricated has been studied, and as a result, the possibility of wet etching of a solution containing phosphoric acid, hydrogen peroxide and methanol was investigated, and the device fabrication by applying this method are also discussed. In addition, the spectrum of the fabricated optical device was measured, and the results were theoretically analyzed and compared with the wavelength value obtained by the measurement. It is expected that the PQR device will be able to model cells in a three-dimensional shape or be applied to the display field.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.9-17
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• 1994

Optical properties of $TiO_2$ thin films prepared by ion-beam assisted deposition(1BAD) were investigated. The result shows that the refractive index of IBAD TiOL thin films measured by an envelope method is closer to that of the corresponding bulk than that of conventionally deposited $TiO_2$ thin films and the packing density of IBAD $TiO_2$ thin films measured by a vacuum-to-air spectral shift of films increases drastically. The vacuum-to-air spectral shift of an IBAD $(TiO_2/SiO_2)$ multilayer interference filter was negligible as compared to that of a conventional interference filter and so the IBAD filter is denser and more stable optically than the conventional filter. Also it is observed that the IBAD and conventional $TiO_2$ thin films are stoichiometric and amorphous.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.154-154
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• 1999

금속산화막은 전자부품 및 광학적 응용에 널리 사용되고 있다. 특히 알루미늄의 산화막은 유전체의 재료로 커패시터에 많이 사용되고 있다. 이러한 알루미늄 산화막을 plasma를 이용한 ion plating에 의해 형성하였다.Activated Reactive Evaporation은 화합물의 증착율을 높이는데 좋은 증착법이다. 이러한 증착법에는 reactive ion plating와 ion-assisted deposition 그리고 ion beam sputtering 등이 있다. 본 연구에서는 알루미늄 산화막을 증착시키기 위해 plasma를 이용한 electron-beam법을 사용하였다. Turbo molecular pump로 챔버 내의 진공을 약 10-7torr까지 낸린 후 5$\times$10-5torr까지 O2와 Ar을 주입시켰다. 각 기체의 분압은 RGA(residual gas analyzer)로 조사하여 일정하게 유지시켰다. plasma를 발생시키기 위해 filament에서 열전자를 방출시키고 1kV 정도의 electrode에 의해 가속시켜 이들 기체들과 반응시켜 plasma를 발생시켰다. 금속 알루미늄을 5kV정도의 고전압과 90mA의 전류로 electron beam에 의해 증발시켰다. 기판의 흡착율을 높ㅇ기 위해 기판에 500V로 bias 전압을 걸어 주었다. 증발된 금속 알루미늄 증기들이 plasmaso의 산소 이온들과 활성 반응을 이루어 알루미늄 기판 위에 Al2O3막을 형성하였다. 알루미늄 산화막을 분석하기 위해 XPS(X-ray Photoelectron Spectroscopy)로 화학적 조성을 조사하였는데, 알루미늄의 2p전자의 binding energy가 76.5eV로 측정되었다. 이는 대부분 증착된 알루미늄이 산소 이온과 반응하여 Al2O3로 형성된 것이다. SEM(Scanning electron Microscopy)과 AFM(Atomim Force microscopy)으로 증착박 표면의 topology와 roughness를 관찰하였다. grain의 크기는 10nm에서 150nm이었고 증착막의 roughness는 4.2nm이었다. 그리고 이 산화막에 전극을 형성하여 유전 상수와 손실률 등을 측정하였다. 이와 같이 plasma를 이용한 3-beam에 의한 증착은 금속의 산화막을 얻는데 유용한 기술로 광학 재료 및 유전 재료의 개발 및 연구에 많이 사용될 것으로 기대된다.

• Journal of Electrochemical Science and Technology
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• v.2 no.4
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• pp.193-197
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• 2011

The influences of the thickness and microstructure of Fe layer on the electrochemical performances of Fe/Si multilayer thin film anodes were investigated. The Fe/Si multilayer films were prepared by electron beam evaporation, in which Fe layer was deposited with/without simultaneous bombardment of Ar ion. The kinetics of Li insertion/extraction reactions in the early stage are slowed down with increasing the thickness of Fe layer, but such a slowdown seems to be negligible for thin Fe layers less than about $500{\AA}$. When the Fe layer was deposited with ion bombardment, even the $300{\AA}$ thick Fe layer significantly suppress Li diffusion through the Fe layer. This is attributed to the dense microstructure of Fe layer, induced by ion beam assisted deposition (IBAD). It appears that the Fe/Si multilayer films prepared with IBAD show good cyclability compared to the film deposited without IBAD.

• Progress in Superconductivity and Cryogenics
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• v.9 no.1
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• pp.18-21
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• 2007

Highly textured MgO template by ion-beam-assisted deposition(IBAD) was successfully fabricated using a continuous reel-to-reel(R2R) mode. To enlarge the deposition area, the previous IBAD system was modified into the system with 14-pass and five heating zone. Every processing step was carried out using this multi-turn IBAD system. The overall process consists of R2R electropolishing of a hastelloy C276 tape, deposition of $Al_2O_3$ diffusion barrier, $Y_2O_3$ seed layer, IBAD-MgO and homoepi-MgO layer. The IBAD-MgO templates were fabricated using the IBAD system with 216 cm-length deposition zone and 32 cm diameter ion source. The texture of MgO films developed during the IBAD process was monitored by in-situ reflection high energy electron diffraction(RHEED) to optimize the IBAD process. Recently, 100 m long IBAD-MgO tape with in-plane texture of $\Delta{\phi}<10^{\circ}$ was successfully fabricated using the modified IBAD system. In this report, the detailed deposition condition of getting a long length IBAD-MgO template with a good epitaxy is described.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.8
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• pp.11-17
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• 2001

Industrial use of physical vapor deposition(PVD) has been widely expanded during last two decades, and in the mean time plasma assistance in PVD has become an essential tool in preparing compound films with dense microstructure. The principles of electron beam-based plating, balanced and unbalanced magnetron sputtering and cathodic arc deposition. consisting three basic configuration of plasma assisted PVD(PAPVD)process, were reviewed. Recent technical development in PVD coating process were discussed. This paper tries to show tendency for developing new coating film on cutting tools.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1047-1055
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• 2006

We patterned nano-width lines on a super hard bulk diamond substrate by varying the ion beam current and ion beam sources with a dual beam field ion beam (FIB). In addition, we successfully fabricated two-dimensional nano patterns and three-dimensional nano plate modules. We prepared nano lines on a diamond and a silicon substrate at the beam condition of 30 kV, 10 pA $\sim$ 5 nA with $Ga^+$ ion and $H_2O$ assisted ion sources. We measured each of the line-width, line-depth, etched line profiles, etch rate, and aspect ratio, and then compared them. We confirmed that nano patterning was possible on both a bulk diamond and a silicon substrate. The etch rate of $H_2O$ source can be enhanced about two times than that of Ga source. The width of patterns on a diamond was smaller than that on a silicon substrate at the same ion beam power The sub-100 nm patterns on a diamond were made under the charge neutralization mode to prevent charge accumulation. We successfully made a two-dimensional, 240 nm-width text of the 300-lettered Lord's Prayer on a gem diamond with 30 kV-30 pA FIB. The patterned text image was readable with a scanning electron microscope. Moreover, three dimensional nano-thick plate module fabrication was made successfully with an FIB and a platinum deposition, and electron energy loss spectrum (EELS) analysis was easily performed with the prepared nano plate module.

• Progress in Superconductivity and Cryogenics
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• v.15 no.4
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• pp.1-5
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• 2013

This paper reviews recent progress in research and development (R&D) of reactive co-evaporation for high performance REBCO coated conductors in Korea. Two types of reactive co-evaporation methods were developed for the deposition of SmBCO and GdBCO superconducting layers respectively on the IBAD (Ion Beam Assisted Deposition)-MgO template in the Korean coated conductor project. Batch type reactive co-evaporation equipment and its processing were developed for SmBCO coated conductors at Korea Electrotechnology Research Institute (KERI) in conjunction with the Korea Advanced Institute of Science and Technology (KAIST), and a very high critical current exceeding 1,000 A/cm at 77 K in the self field was achieved through the optimization of deposition parameters. Reel-to-reel type reactive co-evaporation processing with a high conversion rate was also developed, while long length GdBCO coated conductors have been routinely produced by SuNAM Co. The minimum critical current of 422 A/cm-w at 77 K in self field was confirmed for 1 km-long GdBCO tape.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.209-212
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• 2011

Hafnium nitride (HfN) thin films were deposited onto a silicon substrate by inductive coupled nitrogen plasma-assisted radio frequency magnetron sputtering. The films were prepared without intentional substrate heating and a substrate negative bias voltage ($-V_b$) was varied from -50 to -150 V to accelerate the effects of nitrogen ions ($N^+$) on the substrate. X-ray diffractometer patterns showed that the structure of the films was strongly affected by the negative substrate bias voltage, and thin film crystallization in the HfN (100) plane was observed under deposition conditions of -100 $V_b$ (bias voltage). Atomic force microscopy results showed that surface roughness also varied significantly with substrate bias voltage. Films deposited under conditions of -150 $V_b$ (bias voltage) exhibited higher hardness than other films.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.50-56
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• 1998

Ion beam assisted deposition (IBAD) was successfully used to produce a dense and ultra-adherent Hydroxyapatite (HA) film on titanium alloy and alumina. Recently it is also proved that the HA coatings on alumina substrate treated with 20 ppm $AgNO_3$ had the structure of $(Ag, Ca)_10(PO_4)6(OH)_2$, which exhibited excellent antimicrobial effects. The present paper aims to morphlogically characterize the adhesion of macrophages on newly developed Ag-HA coated alumina and Ti6A14V substrates and to evaluate the biocompatibility of the coatings in vitro. It can be found that the cell number on alumina of the concentration of $AgNO_3$ in the treatment, the cell number on Ag-HA coatings decreased. Up to 20 ppm $AgNO_3$ by Ag-treatment, the morphological development of the cells on Ag-HA coating was similar to that of the cells on HA coating, suggesting the biotolerance of the Ag-HA coatings.