• Journal of Satellite, Information and Communications
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• v.8 no.2
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• pp.36-43
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• 2013

In this study, the high current behaviors and double snapback mechanism of gate grounded_extended drain n-type MOSFET(GG_EDNMOS) device were analyzed in order to realize the robust electrostatic discharge(ESD) protection performances of high voltage operating display driver IC(DDIC) chips. Both the transmission line pulse(TLP) data and the thermal incorporated 2-dimensional simulation analysis as a function of ion implant conditions demonstrate a characteristic double snapback phenomenon after triggering of bipolar junction transistor(BJT) operation. Also, the background carrier density is proven to be a critical factor to affect the high current behavior of the GG_EDNMOS devices.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.22 no.1
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• pp.52-59
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• 2012

Objectives: The purpose of this study was to evaluate the exposure possibility of by-products during the semiconductor manufacturing processes. Methods: The authors investigated types of chemicals generated during semiconductor manufacturing processes by the qualitative experiment on generation of by-products at the laboratory and a literature survey. Results: By-products due to decomposition of photoresist by UV-light during the photo-lithography process, ionization of arsine during the ion implant process, and inter-reactions of chemicals used at diffusion and deposition processes can be generated in wafer fabrication line. Volatile organic compounds (VOCs) such as benzene and formaldehyde can be generated during the mold process due to decomposition of epoxy molding compound and mold cleaner in semiconductor chip assembly line. Conclusions: Various types of by-products can be generated during the semiconductor manufacturing processes. Therefore, by-products carcinogen such as benzene, formaldehyde, and arsenic as well as chemical substances used during the semiconductor manufacturing processes should be controlled carefully.

• The Journal of Advanced Prosthodontics
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• v.7 no.2
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• pp.172-177
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• 2015

PURPOSE. The purpose of this study was to evaluate cell toxicity due to ion release caused by galvanic corrosion as a result of contact between base metal and titanium. MATERIALS AND METHODS. It was hypothesized that Nickel (Ni)-Chromium (Cr) alloys with different compositions possess different corrosion resistances when contacted with titanium abutment, and therefore in this study, specimens ($10{\times}10{\times}1.5mm$) were fabricated using commercial pure titanium and 3 different types of Ni-Cr alloys (T3, Tilite, Bella bond plus) commonly used for metal ceramic restorations. The specimens were divided into 6 groups according to the composition of Ni-Cr alloy and contact with titanium. The experimental groups were in direct contact with titanium and the control groups were not. After the samples were immersed in the culture medium - Dulbecco's modified Eagle's medium[DMEM] for 48 hours, the released metal ions were detected using inductively coupled plasma mass spectrometer (ICP-MS) and analyzed by the Kruskal-Wallis and Mann-Whitney test (P<.05). Mouse L-929 fibroblast cells were used for cell toxicity evaluation. The cell toxicity of specimens was measured by the 3-{4,5-dimethylthiazol-2yl}-2,5-diphenyltetrazolium bromide (MTT) test. Results of MTT assay were statistically analyzed by the two-way ANOVA test (P<.05). Post-hoc multiple comparisons were conducted using Tukey's tests. RESULTS. The amount of metal ions released by galvanic corrosion due to contact between the base metal alloy and titanium was increased in all of the specimens. In the cytotoxicity test, the two-way ANOVA showed a significant effect of the alloy type and galvanic corrosion for cytotoxicity (P<.001). The relative cell growth rate (RGR) was decreased further on the groups in contact with titanium (P<.05). CONCLUSION. The release of metal ions was increased by galvanic corrosion due to contact between base metal and titanium, and it can cause adverse effects on the tissue around the implant by inducing cytotoxicity.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.353-360
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• 2005

Surface treatment play an important role in nucleating calcium phosphate deposition on surgical Ti implant. Therefore, the purpose of this study is to examine whether the precipitation of apatite on cp-Ti and Ti alloys are affected by surface modification in HCl and $H_2O_2$ solution. Specimens were then chemically treated with a solution containing 0.1 M HCl and 8.8M $H_2O_2$ at $80^{\circ}C$ for 30 mins, and subsequently heat-treated at $400^{\circ}C$ for 1 hour. All specimens were immersed in the HBSS with pH 7.4 at $36.5^{\circ}C$ for 15 days, and the surface was examined with XRD, SEM, EDX ana XPS. Also, pure Ti, Ti-6Al-4V and Ti-6Al-7Nb alloy specimens with and without surface treatment were implanted in the abdominal connective tissue of mice for 4 weeks. All specimens chemically treated with HCl and $H_2O_2$ solution have the ability to form a apatite layer in the HBSS which has inorganic ion composition similar to human blood plasma. The average thickness of the fibrous capsule surrounding the specimens implanted in the connective tissue was $38.57\;{\mu}m,\;62.27\;{\mu}m\;and\;45.64\;{\mu}m$ in the cp-Ti, Ti-6Al-4V ana Ti-6Al-7Nb alloy specimens with the chemical treatment respectively, and $52.20\;{\mu}m,\;75.62\;{\mu}m\;and\;66.56\;{\mu}m$ in the commercial specimens of cp-Ti, Ti-6Al-4V and Ti-6Al-7Nb without any treatment respectively. The results of this evaluation indicate that the chemically treated cp-Ti, Ti-6Al-4V ana Ti-6Al-7Nb alloys have better bioactivity and biocompatibility compared to the other metals tested.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.36-46
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• 1979

Using N_ Ch silicon gate technology . the capacitors and transistors with various dimenssion were fabricated. Although the applied process was somewhat standard the conditions of ion implantation for the gate were varied by changing the implant energies from 30keV to 60keV for B and from 100 keV to 175keV for P . The doses of the implant also changed from 3 $\times$ 10 /$\textrm{cm}^2$ to 5 $\times$ 10 /$\textrm{cm}^2$ for B and from 4$\times$ 10 /$\textrm{cm}^2$ to 7 $\times$ 10 /$\textrm{cm}^2$ for P . The D. C. parameters such as threshold voltage. substrate doping level, the degree of inversion, capacitance. flat band voltage, depletion layer width, gate oxide thickless, surface states, motile charge density, electron mobility. leakage current were evaluated and also compared with the corresponing theoretical values and / or good numbers for application. The threshold voltages measured using curve tracer and C-V plot gave good agreements with the values calculated from SUPREM II which has been developed by Stanford University process group. The threshold vol tapes with back gate bias were used to calculate the change of the substrate doping level. The measured subthreshold slope enabled the prediction of the degree of inversion The D. C. testing results suggest the realized capacitors and transistors are suited for the memory applications.

• Journal of Periodontal and Implant Science
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• v.29 no.2
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• pp.401-415
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• 1999

Root surfaces affected by periodontal disease undergo various forms of changes. Cementum exposure from gingival recession may result in absorption of calcium, phosphorus, and fluoride and subsequent hypermineralization and increased radiodensity. Although some reports have suggested that inorganic content with root cementum might show various changes depending upon age or extent of periodontal disease, but no consensus can be reached regarding the the distribution of various elements. The present study examines the difference in mineral content between healthy and periodontal diseased roots by analyzing three areas per tooth along the root surface in cervico-apical direction using electron probe and scanning electron microscope. Healthy tooth that was extracted for orthodontic purpose was used as control. Experimental teeth include those with periodontal pocket depth exceeding 6mm and those with gingival recession and periodontal pocket depth of 2-4mm. Levels of Ca, P, Mg and Na were measured using wavelength dispersive x-ray spectrometer at three areas per tooth. The examined areas were located apical to cemento-enamel junction in control and periodontal ligament-depleted areas in experimental teeth. The corresponding areas were also examined with scanning electron microscope(x70) The results are as follows. 1. Minerals were detected in order of Ca, P, Mg and Na. In all root surfaces, levels of Ca and P were higher in dentin than in cementum. 2. Level of Mg was twice as high in dentin than in cementum. There was no significant difference in the level of Mg and Na between normal and periodontal diseased roots or between the various locations in the same root. 3. Level of Ca and P in the surface cementum showed no difference between normal and periodontal diseased root, although the areas in dentin with high level of either ion also showed high level of corresponding ion in cementum. 4. Difference in the Ca and P content between various locations within the same root was noted, although no coherent pattern existed. These results suggest that although the mineral content of the root cementum in periodontitis-affected tooth is affected by exogenous ions from saliva and food, but there was no difference in the mineral contents between normal and periodontally diseased root.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.360.1-360.1
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• 2016

Hydroxyapatite (Ca10(PO4)6(OH)2, HAP) particles have attracted a great deal of attention in biomedical fields due to their good biocompatibility, bioactivity and fairly broad applications as drug delivery, dental implant, bone cement, and etc. Thus, many researchers have made an effort to add new functionalities such as luminescence, drug delivery, and bone regeneration properties up to HAP powders by controlling their nanostructure as well as composition. In this research, the mesoporous strontium substituted HAP (Sr-HAP) microspheres were synthesized using a hydrothermal method. In this synthesis, aspartic acid monomers were utilized to form microsphere by controlling surface energy of HAP particles and Sr ions were substituted into Ca ion sites, which induced luminescence property in HAP powders. Moreover, the change in the amount of Sr substitution was found to influence the particle size, morphology, and concurrently surface area, which led to changing drug loading as well as drug release property. The amount of Sr influences the morphology, luminescent properties, particle size, surface area cell viability and drug loading property, which are investigated by SEM, TEM, XRD, FTIR, BET, XPS and in vitro test such as MTT assay and drug release test. In particular, the multifunctional Sr-HAP with molar ratios of 0.25 (Sr/(Ca+Sr)) possessed the strongest luminescent property as well as the superior drug loading and sustained release properties that were correspondent with large surface area and pore size. Our study indicates that the fabricated multifunctional Sr-HAP microspheres are quite useful for bone regeneration and drug delivery.

• Journal of Periodontal and Implant Science
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• v.41 no.1
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• pp.30-43
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• 2011

Purpose: Under different culture conditions, periodontal ligament (PDL) stem cells are capable of differentiating into cementoblast-like cells, adipocytes, and collagen-forming cells. Several previous studies reported that because of the stem cells in the PDL, the PDL have a regenerative capacity which, when appropriately triggered, participates in restoring connective tissues and mineralized tissues. Therefore, this study analyzed the genes involved in mineralization during differentiation of human PDL (hPDL) cells, and searched for candidate genes possibly associated with the mineralization of hPDL cells. Methods: To analyze the gene expression pattern of hPDL cells during differentiation, the hPDL cells were cultured in two conditions, with or without osteogenic cocktails (${\beta}$-glycerophosphate, ascorbic acid and dexamethasone), and a DNA microarray analysis of the cells cultured on days 7 and 14 was performed. Reverse transcription-polymerase chain reaction was performed to validate the DNA microarray data. Results: The up-regulated genes on day 7 by hPDL cells cultured in osteogenic medium were thought to be associated with calcium/iron/metal ion binding or homeostasis (PDE1A, HFE and PCDH9) and cell viability (PCDH9), and the down-regulated genes were thought to be associated with proliferation (PHGDH and PSAT1). Also, the up-regulated genes on day 14 by hPDL cells cultured in osteogenic medium were thought to be associated with apoptosis, angiogenesis (ANGPTL4 and FOXO1A), and adipogenesis (ANGPTL4 and SEC14L2), and the down-regulated genes were thought to be associated with cell migration (SLC16A4). Conclusions: This study suggests that when appropriately triggered, the stem cells in the hPDL differentiate into osteoblasts/cementoblasts, and the genes related to calcium binding (PDE1A and PCDH9), which were strongly expressed at the stage of matrix maturation, may be associated with differentiation of the hPDL cells into osteoblasts/cementoblasts.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.91-91
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• 1999

광소자 기술은 정보 전달 및 저장 기술의 지속적인 증가 요구에 따라 발전을 거듭하여 왔다. 특히 광통신 및 저장 기술에서 광원으로 사용되는 레이저 다이오드는 안정되면서 쉽게 제작할 수 있어야 한다. 이온 주입 방법은 반도체 공정에서 광범위하게 사용되는 공정이며 이미 소자측면에서 안정성이 확보되었다고 볼 수 있으나 대부분 메모리 등의 실리콘 반도체에서 이용되어 왔다. 최근에는 화합물 반도체 분야에서도 적용하는 예가 증가되고 있으나 광원으로 사용되는 레이저 다이오드의 경우는 우수한 품질의 반도체 층이 요구되며 따라서 damage가 큰 이온 주입 방법을 이용한 연구는 아직 많이 이루어져 있지 않다. 본 연구에서는 레이저 다이오드 구조의 성장측에 국부적으로 Fe 이온을 주입하여 도파로를 형성하여 광을 구속하여 도파시키는 동시에 전기적으로도 도파로 부분으로만 다이오드가 형성되도록 하고자 한다. 먼저 p층의 전기적 절연에 필요한 조건을 확보하기 위하여 CBE를 사용하여 Fe가 doping 된 SI-InP wafer 위에 p-InP (Be:5x1017 cm-3)층을 1.2$mu extrm{m}$ 성장한 후 ohmic 층으로 p-InGaAs (Be:1x1019 cm-3)을 0.1$\mu\textrm{m}$ 성장한 시료에 고에너지 이온 주입 장치를 사용하여 Fe 이온을 1MeV, 1.6meV의 에너지에 각각 1x1014cm-2, 2x1014cm-2 의 dose로 전면에 implant 하였다. 이 시료를 tube furnace에서 500, 600, $700^{\circ}C$각각 10분씩 annealing 한 후 재성장을 확인하기 위하여 DCXRD을 측정하였다. 그림 1은 DCXRD rocking curve로 annealing 하기 전 후의 In rich에서 side peak의 감소를 확인 할 수 있었는데 이는 damage가 어느 정도 복구되었음을 의미한다. 또한 절연 특성을 확인하기 위하여 ohmic metal을 증착하여 Hall 효과를 측정하였다. 그림 2에 보이는 것과 같이 annealing 온도가 증가함에 따라 면저항이 크게 증가함을 볼 수 있으며 이온 주입하기 전의 시료에 비해 104 이상의 저항을 갖을 수 있다. 향후 이러한 결과를 바탕으로 1.55$\mu\textrm{m}$ LD 구조에서 발진 특성을 관찰할 계획이다.

• Analytical Science and Technology
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• v.5 no.2
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• pp.199-202
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• 1992

Ti-silicide was formed by using metal-Ti target and composite target on the silicon substrate that $BF_2$ were introduced into. Implant energies of $BF_2$ were 50keV and 90keV. The behavior of boron was investigated by SIMS. The redistribution of boron occurred during the formation of Ti-silicide by metal-Ti target and the sample implanted at the energy of 50keV showed severe out-diffusion. In the case that Ti-silicide was formed by composite target, there was little redistribution of boron.