• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.787-791
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• 2004

We investigated field-effect ion-transport devices based on carbon nanotubes by using classical molecular dynamics simulations under applied external force fields, and we present model schematics that car be applied to the nanoscale data storage devices and unipolar ionic field-effect transistors. As the applied external force field is increased, potassium ions rapidly flow through the nanochannel. Under low external force fields, ther nal fluctuations of the nanochannels affect tunneling of the potassium ions whereas the effects of thermal fluctuations are negligible under high external force fields. Since the electric current conductivity increases when potassium ions are inserted into fullerenes or carbon nanotubes, the field effect due to the gate, which can modify the position of the potassium ions, changes the tunneling current between the drain and the source.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.241-242
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• 2008

The Velocity Autocorrelation Function (VAF) of the sodium ions is calculated for a range of temperature from 250K to 1000K and converted into the linear ac-conductivity and ac-susceptibility response via Fourier transformation. A peak is found in the conductivity around $6\times10^{12}$ Hz that has some of the character of a Poley absorption. Here it is shown to be due to an harmonically coupled site vibrations of the sodium atoms, which extend only over a limited range. At frequencies below the peak the conductivity tends towards a constant i.e. dc value corresponding to a constant flow of ions through the simulation cell. At high temperatures the conductivity due to this ion transport process behaves like a metal with an insulator to metal transition occurring around a specific temperature.

• Nuclear Engineering and Technology
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• 제54권7호
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• pp.2586-2591
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• 2022

In the present work, we have irradiated the DI-BSCCO superconducting tapes with the 100 keV deuterium ions to investigate the effect of ion irradiation on their critical current (Ic). The damage simulations are carried out using the binary collision approximation method to get the spatial distribution and depth profile of the damage events in the high temperature superconducting (HTS) tape. The point defects are formed near the surface of the HTS tape. These point defects change the vortex profile in the superconducting tape. Due to the long-range interaction of vortices with each other, the Ic of the tape degrades at the 77 K and self magnetic field. The radiation dose of 2.90 MGy degrades the 44% critical current of the tape. The results of the displacement per atom (dpa) and dose deposited by the deuterium ions are used to fit an empirical relation for predicting the degradation of the Ic of the tape. We include the dpa, dose and columnar defect terms produced by the incident particles in the empirical relation. The fitted empirical relation predicts that light ion irradiation degrades the Ic in the DI-BSCCO tape at the self field. This empirical relation can also be used in neutron irradiation to predict the lifetime of the DI-BSCCO tape. The change in the Ic of the DI-BSCCO tape due to deuterium irradiation is compared with the other second-generation HTS tape irradiated with energetic radiation.

• 멤브레인
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• 제28권6호
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• pp.388-394
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• 2018

탄소나노튜브(CNT) 기반의 멤브레인은 높은 물 전달률과 직경에 따른 이온 배제율로 해수담수, 물질 정화 등을 위한 분리막으로써의 가능성을 보여 주었다. 이온 선택성은 CNT 기반 멤브레인의 응용 분야를 확대하기 위한 중요한 요소이며, 기능기를 이용하여 이온 선택성의 조절이 가능함이 보고되었다. 다양한 원자가/크기의 이온이 혼합될 경우, 이온-기능기간 작용력 뿐만 아니라 이온-이온간의 작용력, 이온의 크기에 의한 반발력 등이 복합적으로 작용한다. 이에 본 연구에서는 분자동역학 전산모사를 통하여, 상이한 원자가/크기를 가진 이온의 혼합이 기능화된 CNT의 이온 선택성에 미치는 영향을 연구하였다. Potential of Mean Force 계산을 통하여 이온 투과에 대한 자유 에너지 장벽을 계산하였으며, CNT 크기 변화, 전하량 변화를 통하여 이온 선택성과 배제에 영향을 미치는 요소를 분석하였다. 본 연구는 CNT 멤브레인을 이용한 분리막 설계, 생체 이온 전달 채널 모사 등에 유용할 것으로 기대한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.379-380
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• 2008

Molecular Dynamics (MD) simulations have been used to model the dynamics of the charge-compensating sodium ions in the non-stoichiometric hollandite Nax$(Ti_{8-x}Cr_x)O_{16}$. These interstitial ions reside in 'tunnels' in the crystal structure and move under the forces of both the ions making up the cage structure and the many body interactions of the other sodium ions in the tunnel. The Velocity Autocorrelation Function (VAF) of the sodium ions is calculated for a range of temperature from 250K to 1000K and converted into the linear ac-conductivity and ac-susceptibility response via Fourier transformation. A peak is found in the conductivity around $6\times10^{12}$ Hz that has some of the character of a Poley absorption. Here it is shown to be due to an harmonically coupled site vibrations of the sodium atoms, which extend only over a limited range. At frequencies below the peak the conductivity tends towards a constant i.e. dc value corresponding to a constant flow of ions through the simulation cell. At high temperatures the conductivity due to this ion transport process behaves like a metal with an insulator to metal transition occurring around a specific temperature.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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• pp.110-123
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• 2005

This paper proposes an intelligent method for the optimal load distribution of two cooperating robots(TCRs) using fuzzy logic. The proposed scheme requires the knowledge of the robots' dynamics, which in turn depend upon the characteristics of large flat panel displays(LFPDs) carried by the TCRs. However, the dynamic properties of the LFPD are not known exactly, so that the dynamics of the robots, and hence the required joint torque, must be calculated for nominal set of the LFPD characteristics. The force of the TCRs is an important factor in carrying the LFPD. It is divided into external force and internal force. In general , the effects of the internal force of the TCRs are not considered in performing the load distribution in terms of optimal time, but they are essential in optimal trajectory planning: if they are not taken into consideration, the optimal scheme is no longer fitting. To alleviate this deficiency, we present an algorithm for finding the internal-force factors for the TCRs in terms of optimal time. The effectiveness of the proposed system is demonstrated by computer simulations using two three-joint planner robot manipulators.

• 에너지공학
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• 제20권4호
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• pp.278-285
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• 2011

본 연구에서는 리튬이온 전지의 충 방전 특성에 관한 모델링과 전산모사를 수행하였다. 전지의 시스템 구성은 단순화된 2차원 형태의 단일셀에 대하여 모델링하였고, 공학적 편미분방정식 풀이자인 FEMLAB을 이용하여 288 K와 318 K 범위내에서 충방전 특성에 대한 열적 모델링을 수행하였다. 모델링에 채택한 물성치 변수들에 대하여 온도특성을 고려하였으며, 이를 통하여 전지의 특징적인 충방전의 사이클 변화와 충방전 전하량의 변화를 체계적으로 전산모사하였다. 그 결과 충방전 속도에 상관없이 충방전의 주기가 온도가 낮아질수록 짧아짐을 정량적으로 해석할 수 있었다. 이에 부가하여 전지내에서 리튬이온의 물질전달 현상을 해석하여, 전지의 충방전 특성과의 상관관계를 고찰하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.421-424
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• 1998

In this paper are presented a newly proposed 3D monte carlo (MC) damage model for the dynamic simulation in order to more accurately and consistently predict the implant-induced point defect distributions of the various ions in crystalline silicon. This model was applied to phosphorus implants for the ULSI CMOS technology developement. In additon, a newly applied 3D-trajectory split method has been implemented into our model to reduce the statistical fluctuations of the implanted impurity and the defect profiles in the relatively large implanted area as compared to 1D or 2D simulations. Also, an empirical electronic energy loss model is proposed for phosphorus and silicon implants. The 3D formations of the amorphous region and the ultra-shallow junction around the implanted region could be predicted by using our model, TRICSI(Transport ions into crystal-silicon).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.565-567
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• 2000

In this paper, the discharge characteristics of AC PDP, one of the leading technologies currently under development for large-area flat displays, is computed by using Finite Element Method(FEM) combined with Flux-corrected Transport(FCT) algorithm. Up to now, many simulations of AC PDP have been mainly done by Finite Difference Method(FDM). But we simulated the AC PDP by using FEM-FCT method which discretizes the region of interest with unstructured grids. FEM-FCT method can reduce the computational cost because of refining locally where the physical quantities have steep gradients and is more efficient in solving discharge problems, such as a AC PDP. Results are presented in Ne-Xe(4%) gas mixture for a gas pressure of 400 Torr and as the discharge proceeds, the space and time variations of the electron and ion densities, potential and wall charges on the dielectric are described. Results from our simulation by FEM-FCT are similar to those from simulation by FDM and are more efficient in computational cost reduction.

• 한국산학기술학회논문지
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• 제7권2호
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• pp.168-174
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• 2006

본 연구는 분자동력학 시뮬레이션을 이용하여 탄소 나노튜브를 이용한 전계효과 이온-전송 소자를 분석하였다. 외부 전기장에 의해 단전자 전계효과 트랜지스터 및 나노크기의 데이터 저장 장치로 활용될 수 있는 원리를 규명하였다. 외부 전기장이 증가할수록 칼륨 원자는 채널을 빠르게 통과하였다. 낮은 외부 전계에서는 나노채널의 열적 파동이 칼륨 원자의 터널링에 영향을 주게 됨을 해석하였다. 이로서 외부 전계의 강도에 따라 칼륨원자의 채널을 터널링하는 효과를 제어할 수 있는 메커니즘을 도출하였다.