• Title/Summary/Keyword: Ion transport simulations

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Field-effect Ion-transport Devices with Carbon Nanotube Channels: Schematics and Simulations

  • Kwon Oh Kuen;Kwon Jun Sik;Hwang Ho Jung;Kang Jeong Won
    • Proceedings of the IEEK Conference
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    • 2004.08c
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    • pp.787-791
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    • 2004
  • We investigated field-effect ion-transport devices based on carbon nanotubes by using classical molecular dynamics simulations under applied external force fields, and we present model schematics that car be applied to the nanoscale data storage devices and unipolar ionic field-effect transistors. As the applied external force field is increased, potassium ions rapidly flow through the nanochannel. Under low external force fields, ther nal fluctuations of the nanochannels affect tunneling of the potassium ions whereas the effects of thermal fluctuations are negligible under high external force fields. Since the electric current conductivity increases when potassium ions are inserted into fullerenes or carbon nanotubes, the field effect due to the gate, which can modify the position of the potassium ions, changes the tunneling current between the drain and the source.

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Ion Transport and High Frequency Dielectric of the Hollandite Nax$(Ti_{8-x}Cr_x)O_{16}$ (Hollandite Nax$(Ti_{8-x}Cr_x)O_{16}$의 이온 전송과 고유전율 특성)

  • Yun, Ju-Ho;Li, Ying;Choi, Yong-Sung;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.241-242
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    • 2008
  • The Velocity Autocorrelation Function (VAF) of the sodium ions is calculated for a range of temperature from 250K to 1000K and converted into the linear ac-conductivity and ac-susceptibility response via Fourier transformation. A peak is found in the conductivity around $6\times10^{12}$ Hz that has some of the character of a Poley absorption. Here it is shown to be due to an harmonically coupled site vibrations of the sodium atoms, which extend only over a limited range. At frequencies below the peak the conductivity tends towards a constant i.e. dc value corresponding to a constant flow of ions through the simulation cell. At high temperatures the conductivity due to this ion transport process behaves like a metal with an insulator to metal transition occurring around a specific temperature.

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Deuterium ion irradiation impact on the current-carrying capacity of DI-BSCCO superconducting tape

  • Rajput, M.;Swami, H.L.;Kumar, R.;Bano, A.;Vala, S.;Abhangi, M.;Prasad, Upendra;Kumar, Rajesh;Srinivasan, R.
    • Nuclear Engineering and Technology
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    • v.54 no.7
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    • pp.2586-2591
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    • 2022
  • In the present work, we have irradiated the DI-BSCCO superconducting tapes with the 100 keV deuterium ions to investigate the effect of ion irradiation on their critical current (Ic). The damage simulations are carried out using the binary collision approximation method to get the spatial distribution and depth profile of the damage events in the high temperature superconducting (HTS) tape. The point defects are formed near the surface of the HTS tape. These point defects change the vortex profile in the superconducting tape. Due to the long-range interaction of vortices with each other, the Ic of the tape degrades at the 77 K and self magnetic field. The radiation dose of 2.90 MGy degrades the 44% critical current of the tape. The results of the displacement per atom (dpa) and dose deposited by the deuterium ions are used to fit an empirical relation for predicting the degradation of the Ic of the tape. We include the dpa, dose and columnar defect terms produced by the incident particles in the empirical relation. The fitted empirical relation predicts that light ion irradiation degrades the Ic in the DI-BSCCO tape at the self field. This empirical relation can also be used in neutron irradiation to predict the lifetime of the DI-BSCCO tape. The change in the Ic of the DI-BSCCO tape due to deuterium irradiation is compared with the other second-generation HTS tape irradiated with energetic radiation.

Molecular Dynamics Study to Investigate Ion Selectivity of Functionalized Carbon Nanotube Membranes (기능화된 탄소나노튜브 멤브레인의 이온 선택성에 관한 분자동역학 연구)

  • Suk, Myung Eun
    • Membrane Journal
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    • v.28 no.6
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    • pp.388-394
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    • 2018
  • Carbon nanotube (CNT) based membranes are promising candidates for separation membranes by showing high water transport rate and ion rejection rate according to their radii. The ion selectivity is an important factor to discover the full potential of CNT membranes, and it is affected by the functionalization of CNTs. With multivalent/size ion mixtures, the ion selectivity is affected by not only ion-functional groups interaction but also ion-ion interactions and ion size exclusion in a complex manner. In this study, molecular dynamics simulations are performed to study the ion selectivity of functionalized carbon nanotubes when multivalent/size ions are contained. The permeation energy barriers are calculated by plotting potential of mean force profiles, and various factors, such as CNT size and partial charges, affecting ion selectivity are investigated. The results presented here will be useful for designing CNT membranes for ion separation, biomimetic ion channels, etc.

Ion Transport and High Frequency Dielectric Absorption (이온 전송 및 고주파 유전 흡수)

  • Yun, Ju-Ho;Choi, Yong-Sung;Hwang, Jong-Sun;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.379-380
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    • 2008
  • Molecular Dynamics (MD) simulations have been used to model the dynamics of the charge-compensating sodium ions in the non-stoichiometric hollandite Nax$(Ti_{8-x}Cr_x)O_{16}$. These interstitial ions reside in 'tunnels' in the crystal structure and move under the forces of both the ions making up the cage structure and the many body interactions of the other sodium ions in the tunnel. The Velocity Autocorrelation Function (VAF) of the sodium ions is calculated for a range of temperature from 250K to 1000K and converted into the linear ac-conductivity and ac-susceptibility response via Fourier transformation. A peak is found in the conductivity around $6\times10^{12}$ Hz that has some of the character of a Poley absorption. Here it is shown to be due to an harmonically coupled site vibrations of the sodium atoms, which extend only over a limited range. At frequencies below the peak the conductivity tends towards a constant i.e. dc value corresponding to a constant flow of ions through the simulation cell. At high temperatures the conductivity due to this ion transport process behaves like a metal with an insulator to metal transition occurring around a specific temperature.

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Optimal Load Distribution of Transport ing System for Large Flat Panel Displays

  • Kim Jong Won;Jo Jang Gun;Cho Hyun Chan;Kim Doo Yong
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2005.09a
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    • pp.110-123
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    • 2005
  • This paper proposes an intelligent method for the optimal load distribution of two cooperating robots(TCRs) using fuzzy logic. The proposed scheme requires the knowledge of the robots' dynamics, which in turn depend upon the characteristics of large flat panel displays(LFPDs) carried by the TCRs. However, the dynamic properties of the LFPD are not known exactly, so that the dynamics of the robots, and hence the required joint torque, must be calculated for nominal set of the LFPD characteristics. The force of the TCRs is an important factor in carrying the LFPD. It is divided into external force and internal force. In general , the effects of the internal force of the TCRs are not considered in performing the load distribution in terms of optimal time, but they are essential in optimal trajectory planning: if they are not taken into consideration, the optimal scheme is no longer fitting. To alleviate this deficiency, we present an algorithm for finding the internal-force factors for the TCRs in terms of optimal time. The effectiveness of the proposed system is demonstrated by computer simulations using two three-joint planner robot manipulators.

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Computational Modeling of Charge-Discharge Characteristics of Lithium-Ion Batteries (리튬이온 전지의 충방전 특성에 대한 전산 모델링)

  • Lee, Dae-Hyun;Yoon, Do-Young
    • Journal of Energy Engineering
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    • v.20 no.4
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    • pp.278-285
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    • 2011
  • Computational modelling and simulation for the charge-discharge characteristics of Lithium-ion batteries have been carried out. The battery system consists of a simplified 2-dimensional single cell for the modelling, in which the thermal modelling on the charge-discharge characteristics was conducted in the temperature range from 288 K through 318 K by using FEMLAB as an engineering PDE solver. While material parameters adopted in the present modelling were dependent on the system temperature, their thermal modelling were applied on the simulations of the charge-discharge period and the rate of transferring charges systematically. The resulting simulation shows that the cycle of the charge-discharge shorten itself by reducing the system temperature, regardless of the charge-discharge rates. In addition, the mass-transport phenomena of Lithium ion have been discussed in connection with the charge-discharge characteristics in the battery.

Atomistic modeling for 3D dynamci simulation of ion implantation into crystalline silicon

  • 손명식;강정원;변기량;황호정
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.421-424
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    • 1998
  • In this paper are presented a newly proposed 3D monte carlo (MC) damage model for the dynamic simulation in order to more accurately and consistently predict the implant-induced point defect distributions of the various ions in crystalline silicon. This model was applied to phosphorus implants for the ULSI CMOS technology developement. In additon, a newly applied 3D-trajectory split method has been implemented into our model to reduce the statistical fluctuations of the implanted impurity and the defect profiles in the relatively large implanted area as compared to 1D or 2D simulations. Also, an empirical electronic energy loss model is proposed for phosphorus and silicon implants. The 3D formations of the amorphous region and the ultra-shallow junction around the implanted region could be predicted by using our model, TRICSI(Transport ions into crystal-silicon).

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A study on 2-dimensional simulation of AC PDP using FEM-FCT method (FEM-FCT 기법을 이용한 AC PDP 2차원 시뮬레이션에 관한 연구)

  • Kim, Yong-Jin;Min, Woong-Gee;Lee, Seok-Hyun
    • Proceedings of the KIEE Conference
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    • 2000.11c
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    • pp.565-567
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    • 2000
  • In this paper, the discharge characteristics of AC PDP, one of the leading technologies currently under development for large-area flat displays, is computed by using Finite Element Method(FEM) combined with Flux-corrected Transport(FCT) algorithm. Up to now, many simulations of AC PDP have been mainly done by Finite Difference Method(FDM). But we simulated the AC PDP by using FEM-FCT method which discretizes the region of interest with unstructured grids. FEM-FCT method can reduce the computational cost because of refining locally where the physical quantities have steep gradients and is more efficient in solving discharge problems, such as a AC PDP. Results are presented in Ne-Xe(4%) gas mixture for a gas pressure of 400 Torr and as the discharge proceeds, the space and time variations of the electron and ion densities, potential and wall charges on the dielectric are described. Results from our simulation by FEM-FCT are similar to those from simulation by FDM and are more efficient in computational cost reduction.

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A Study of Carbon Nanotube Channel Field-Effect Devices (탄소 나노튜브 채널을 이용한 전계효과 이온-전송 소자 연구)

  • Lee, Jun-Ha;Lee, Hoong-Joo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.7 no.2
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    • pp.168-174
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    • 2006
  • We investigated field-effect ion-transport devices based on carbon nanotubes by using classical molecular dynamics simulations under applied external force fields, and we present model schematics that can be applied to the nanoscale data storage devices and unipolar ionic field-effect transistors. As the applied external force field is increased, potassium ions rapidly flow through the nanochannel. Under low external force fields, thermal fluctuations of the nanochannels affect tunneling of the potassium ions whereas the effects of thermal fluctuations are negligible under high external force fields. Since the electric current conductivity increases when potassium ions are inserted into fullerenes or carbon nanotubes, the field effect due to the gate, which can modify the position of the potassium ions, changes the tunneling current between the drain and the source.

  • PDF