• Title/Summary/Keyword: Ion mixing

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Etch Properties of HfO2 Thin Films using CH4/Ar Inductively Coupled Plasma

  • Woo, Jong-Chang;Kim, Gwan-Ha;Kim, Dong-Pyo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.6
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    • pp.229-233
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    • 2007
  • In this study, we carried out an investigation of the etching characteristics(etch rate, selectivity) of $HfO_2$ thin films in the $CH_4/Ar$ inductively coupled plasma. It was found that variations of input power and negative dc-bias voltage are investigated by the monotonic changes of the $HfO_2$ etch rate as it generally expected from the corresponding variations of plasma parameters. At the same time, a change in either gas pressure or in gas mixing ratio result in non-monotonic etch rate that reaches a maximum at 2 Pa and for $CH_4(20%)/Ar(80%)$ gas mixture, respectively. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4-containing$ plasmas.

Pulsed Magnet ron Sputtering Deposit ion of DLC Films Part II : High-voltage Bias-assisted Deposition

  • Chun, Hui-Gon;Lee, Jing-Hyuk;You, Yong-Zoo;Ko, Yong-Duek;Cho, Tong-Yul;Nikolay S. Sochugov
    • Journal of Surface Science and Engineering
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    • v.36 no.2
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    • pp.148-154
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    • 2003
  • Short ($\tau$=40 $mutextrm{s}$) and high-voltage ($U_{sub}$=2~8 kV) negative substrate bias pulses were used to assist pulsed magnetron sputtering DLC films deposition. Space- and time-resolved probe measurements of the plasma characteristics have been performed. It was shown that in case of high-voltage substrate bias spatial non-uniformity of the magnetron discharge plasma density greatly affected DLC deposition process. By Raman spectroscopy it was found that maximum percentage of s $p^3$-bonded carbon atoms (40 ~ 50%) in the coating was attained at energy $E_{c}$ ~700 eV per deposited carbon atom. Despite rather low diamond-like phase content these coatings are characterized by good adhesion due to ion mixing promoted by high acceleration voltage. Short duration of the bias pulses is also important to prevent electric breakdowns of insulating DLC film during its growth.wth.

An Experimental Study on Flame Structure and Combustion Characteristics of Turbulent Diffusion Flame(I) (난류확산화염의 화염구조와 연소특성에 관한 실험적 연구)

  • Choe, Byeong-Ryun;Jang, In-Gap;Choe, Gyeong-Min
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.20 no.3
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    • pp.1028-1039
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    • 1996
  • This study was focused on the examination of the flame structure and the combustion characteristics of diffusion flame which was formed the turbulent shear flow of a double coaxial air jet system. The shear flow was formed by the difference velocity of surrounding air jet(U$\_$s/) and center air jet (U$\_$c/). So experimental condition was divided S-type flame (.lambda. > 1) and C-type flame (.lambda. < 1) by velocity ratio .lambda. (=U$\_$s//U$\_$c/). For examination of the flame structure and the combustion characteristics in diffusion flame, coherent structure was observed in flame by schlieren photograph method. We measured fluctuating temperature and ion current simultaneously and accomplished the statistical analysis of its. According to schlieren photograph, the flame was stabilized in the rim of the direction of lower velocity air jet, coherent eddy was produced and developed by higher velocity air jet. The statistical data of fluctuating temperature and ion current was indicated that reaction was dominated by higher velocity air jet. The mixing state of burnt gas and non-burnt gas was distributed the wide area at Z = 100 mm of C-type flame.

THE FABRICATION OF A PROCESS HEAT EXCHANGER FOR A SO3 DECOMPOSER USING SURFACE-MODIFIED HASTELLOY X MATERIALS

  • Park, Jae-Won;Kim, Hyung-Jin;Kim, Yong-Wan
    • Nuclear Engineering and Technology
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    • v.40 no.3
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    • pp.233-238
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    • 2008
  • This study investigates the surface modification of a Hastelloy X plate and diffusion bonding in the assembly of surface modified plates. These types of plates are involved in the key processes in the fabrication of a process heat exchanger (PHE) for a $SO_3$ decomposer. Strong adhesion of a SiC film deposited onto Hastelloy X can be achieved by a thin SiC film deposition and a subsequent N ion beam bombardment followed by an additional deposition of a thicker film that prevents the Hastelloy X surface from becoming exposed to a corrosive environment through the pores. This process not only produces higher corrosion resistance as proved by electrolytic etching but also exhibits higher endurance against thermal stress above 9$900^{\circ}C$. A process for a good bonding between Hastelloy X sheets, which is essential for a good heat exchanger, was developed by diffusion bonding. The diffusion bonding was done by mechanically clamping the sheets under a heat treatment at $900^{\circ}C$. When the clamping jig consisted of materials with a thermal expansion coefficient that was equal to or less than that of the Hastelloy X, sound bonding was achieved.

The Fabrication of an Applicative Device for Trench Width and Depth Using Inductively Coupled Plasma and the Bulk Silicon Etching Process

  • Woo, Jong-Chang;Choi, Chang-Auck;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.1
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    • pp.49-54
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    • 2014
  • In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to $SiO_2$ in $SF_6/O_2$ plasma. The etch rate of the Si film was decreased on adding $O_2$ gas, and the selectivity of Si to $SiO_2$ was increased, on adding $O_2$ gas to the $SF_6$ plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of $SF_6/O_2$ (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

Highly Porous Pillared Clay with Multistacked $SiO_2/TiO_2$ Nanosols

  • 조진호;박주형;윤주병
    • Bulletin of the Korean Chemical Society
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    • v.19 no.11
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    • pp.1185-1188
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    • 1998
  • Layered nanocomposite, SiO2/TiO2 sol pillared clay, has been prepared by the ion exchange reaction of Na' ion in montmorillonite with positively charged mixed SiO2/TiO2 sol. The nanosized sol particles were synthesized by mixing SiO2 sol solution with TiO2 one, which is obtained by acidic hydrolysis of TEOS and TiCl4, respectively. From powder XRD, the basal spacing (d001) of the sample calcined at 400 ℃ was found to be ca. 60 Å, due to the multistacking of nanosized SiO2 and TiO2 sol particles, which was confirmed by the pore size analysis from 129Xe NMR and micropore analysis calculated from nitrogen adsorption. The BET specific surface area shows the value of 684 m2g-1 (Langmuir 1115 m2g-1), which is the highest among various pillared clays ever reported previously, and the total porosity is found to be 0.51 mlg-1, and the pores are mainly composed of micropore with a size of ca. 11.8 Å. This result agrees with the adsorption capacity obtained from water adsorption. According to diffuse reflectance ultraviolet-visible spectroscopy, it is found that the TiO2 particles stabilized in the interlayer space of montmorillonite are quantum-sized of ca. 20 Å.

Removal of Cu and Sr Ions using Adsorbent Obtained by Immobilizing Zeolite Synthesized from Jeju Volcanic Rocks in Polyacrylonitrile (제주 화산석으로 합성한 제올라이트를 Polyacrylonitrile에 고정화한 흡착제를 이용한 구리와 스트론튬 이온의 제거)

  • Lee, Chang-Han;Lee, Min-Gyu
    • Journal of Environmental Science International
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    • v.27 no.12
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    • pp.1215-1226
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    • 2018
  • In this study, PAN-SZ (polyacrylonitrile scoria zeolite) beads were prepared by immobilizing Na-A zeolite (SZ-A) synthesized from Jeju volcanic rocks (scoria) on the polymer PAN. FT-IR and TGA analysis results confirmed that the SZ-A was immobilized in the PAN-SZ beads. SEM images showed that the PAN-SZ beads are a spherical shape with 2 mm diameter and exhibit a porous inner structure inside the bead. The most suitable mixing ratio of PAN to SZ-A as the adsorbent for removing Sr ions was PAN/SZ-A = 0.2 g/0.3 g. The adsorption kinetic data for Cu and Sr ions were fitted well with the pseudo-second-order model. The Cu and Sr ion uptakes followed a Langmuir isotherm model and the maximum adsorption capacities at $20^{\circ}C$ were 84.03 mg/g and 75.19 mg/g, respectively. The amount of Sr ion adsorbed by SZ-A on the PAN-SZ beads was about 160 mg/g, which was similar to that adsorbed by SZ-A powder. Thus, the PAN-SZ beads prepared in this study are considered to be effective adsorbents for removing metal ions in aqueous solutions.

Spectrophotometric Determination of Aluminium Ion in Drinking Water by Flow Injection Analysis (흐름주입분석법에 의한 음용수 중 알루미늄 이온의 분광광도법 정량)

  • Choi, Yong-Wook;Jin, Jae-Young
    • Journal of the Korean Chemical Society
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    • v.44 no.5
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    • pp.422-428
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    • 2000
  • Optimum analytical conditions of the aluminium ion were established by flow injection analysis. Eriochrome Cyanine R(ECR) dye reacts with the aluminium ion at pH 6.0 to form a complex that exhibits maximum absorption at 535 nm. Reaction conditions including the mixing and the reaction coil length, the concentration and the pH of the buffer solutio, temperature, and injection loop volume were optimized to intro-duce this reaction into flow injection analysis. The results were as follows. A mixing coil length of 0.5 m and a reaction coil length of 4.0 m, the pH 6.0 and 1M of acetate buffer solution, the ECR concentration of 0.56 mM, the reaction temperature of 40$^{\circ}C$, the injection loop volume of 300${\mu}L$ were chosen as optimum conditions. Under these conditions the detection limit of the aluminiumion was less than 0.05 mg/L and the repeatability was better than 1%. A sampling frequency of 24 times for an hour was achieved. Interfering ions such as $F^-$, HP$O_4^{2-}$, $Fe^{2+}$, $Fe^{3+}$, $Mn^{2+}$, and other anions were tested, interference did not occur up to 1,000mg/L of ion concentration and up to 2,CO0mg/L of sulfate ion con-centration. This method was applied for the determination of aluminium ion in tap water and ground water of Jeonju and the Gochang area. The results showed that the aluminium residual in tap water of the Jeonju area was at a mean of 0.478mg/L and that in tap water of the Gochang area was at a mean of 0.278mg/L. Aluminium ion residual of the tap waters in the Jeonju area was higher level than that in the Gochang area. Aluminium residual in the ground water of the Jeonju area was 0.386 mg/L and was lower compared to 0.564 mg/L for the Gochang area.

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Effect of Carbon on Electrode Characteristics of $LiCoO_2$ Resynthesis ($LiCoO_2$의 재합성시(再合成時) 전극특성(電極特性)에 미치는 탄소(炭素)의 영향(影響))

  • Lee, Churl-Kyoung;Park, Jeong-Kil;Sohn, Jeong-Soo
    • Resources Recycling
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    • v.16 no.6
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    • pp.10-19
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    • 2007
  • The mechanical process followed by hydrometallurgical treatment has been developed in order to recover cobalt and lithium from spent lithium ion battery. In the previous study, a citrate precursor combustion process to prepare cathodic active materials from the leaching solution was elucidated. Resynthesis of electrode materials should be more valuable in spent battery recycling. Conventional slurry mixing of $LiCoO_2$ and carbon cannot make uniform distribution, and therefore the cathode cannot reach the theoretical charge-discharge capacity and is easily degraded during the charge-discharge cycling. In this study, ultra-fine $LiCoO_2$ powders has been prepared by modification of the combustion process and fabricated the enhanced cathode by modification of mixing method of $LiCoO_2$ and carbon added.

Etch Characteristics of TiN Thin Films in the Inductively Coupled Plasma System (유도 결합 플라즈마를 이용한 TiN 박막의 식각 특성)

  • Um, Doo-Seung;Kang, Chan-Min;Yang, Xue;Kim, Dong-Pyo;Kim, Chang-Il
    • Journal of Surface Science and Engineering
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    • v.41 no.3
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    • pp.83-87
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    • 2008
  • This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to $SiO_2$ with $BCl_3$/Ar gas mixture. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) with other conditions were fixed, the maximum etch rate of TiN thin film was 170.6 nm/min. When the DC bias voltage increased from -50 V to -200 V, the etch rate of TiN thin film increased from 15 nm/min to 452 nm/min. As the RF power increased and chamber pressure decreased, the etch rate of TiN thin film showed an increasing tendency. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) under others conditions were fixed, the intensity of optical emission spectra from radical or ion such as Ar(750.4 nm), $Cl^+$(481.9 nm) and $Cl^{2+}$(460.8 nm) was highest. The TiN thin film was effectively removed by the chemically assisted physical etching in $BCl_3$/Ar ICP plasma.