• Nuclear Engineering and Technology
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• 제30권1호
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• pp.17-25
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• 1998

Transport of carbon and boron impurity ions parallel to magnetic field lines in the tokamak SOL (scrape-off layer) is numerically investigated for a one-dimensional steady state. The spatial distributions of density and velocity of the impurity ions in a steady state are calculated by finite difference method for a single-fluid model. The calculated results show that among forces acting on SOL particles thermal force produced tv plasma temperature gradient is a principal force determining the feature of impurity distribution profiles in the tokamak edge. However, strong collisional friction forces appearing dominant in front of the diverter plate restrain impurity ion flows due to temperature gradients from moving toward the midplane. Consequently, the stagnation point develops in the impurity flow by these two forces near the diverter region, in which ion flows change their directions. Impurity ions turn out to be accumulated at the stagnation points, where peaked profiles of highly-ionized state ions are relatively predominant over those of low-ionized state ions.

• 한국진공학회지
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• 제13권1호
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• pp.22-28
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• 2004

본 논문은 탄탈 박막의 증착시 음의 기판 바이어스에 의한 탄탈 박막내의 불순물 농도변화에 대해서 고찰하였다. 탄탈 박막은 실리콘 기판 위에 이온빔 증착장비를 이용하여 기판 바이어스를 걸지 않은 경우와 -125 V의 기판 바이어스를 건 상태에서 증착하였다. 탄탈 박막내의 불순물 농도를 관찰하기 위해서 이차이온 질량분석기(secondary ion mass spectrometry)를 이용하였다. 세슘 클러스터 이온에 의한 깊이분석에서, -125 V의 기판 바이어스를 걸어줌으로써 산소, 탄소, 그리고 실리콘 불순물의 농도가 기판 바이어스를 걸지 않은 경우에 비해 상당히 감소한 것을 알 수 있었다. 또한, 세슘 이온빔과 산소 이온빔을 이용한 전체 불순물의 농도분포에서도, 음의 기판 바이어스가 박막 증착시 각각의 불순물 농도에 영향을 준다는 결과를 얻었고 이에 대한 고찰을 하였다.

• 대한전자공학회논문지
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• 제25권3호
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• pp.294-301
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• 1988

A study on the lattice damages and impurity depth profiles have been performed with BF2 ion implanted silicon materials. Electrical measurement, SIMS and TEM analysis techniques were used in order to identify the reverse annealing phenomena, impurity depth profiles and lattice damages. A typical reverse annealing phenomena were shown at the dose of 1x10**15/cm\ulcorner and non-reverse annealing at the dose of 5x10**15/cm\ulcorner This was explained with the formation of the amorphous region at BF2+ ion implantation with high dose. That is, the amorphous reigons were recrystallized centrated at certain regions were measured by SIMS technique. The dislocation loops-like crystalline defects were observed with TEM cross sections, which were formed at the lattice damaged region during annealing process.

• 한국진공학회지
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• 제12권S1호
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• pp.63-66
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• 2003

It is experimentally shown that a $TiO_2$ film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with $Ar^{+}$ ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between $TiO_2$ film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 $\mu$m depth. The $TiO_2$-Si interface bombarded by $Ar^{+}$ ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the $TiO_2$-Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

• 대한전자공학회논문지
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• 제22권4호
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• pp.51-58
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• 1985

Ion-implanted E-IGFET의 도핑 profile을 임의로 가정하여 threshold 전압을 구하였고. short-channoel에 적용할 때 correction factor K의 개념을 사용하였다. Threshold전압의 이론치는 실험치와 잘 일치하였고, 또한 I-V특성도 실험치와 잘 일치하였다. 아울러 이 program을 package화 하여 실용화시켰다.

• 한국표면공학회지
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• 제45권5호
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• pp.206-211
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• 2012

Process analysis was carried out during deposition of MgO by inductively coupled plasma assisted reactive magnetron sputtering in Ar and $O_2$ ambient. At the initiation of Mg sputtering with bipolar pulsed dc power in Ar ambient, total pressure showed sharp increase and then slow fall. To analyse partial pressure change, QMS was used in downstream region, where the total pressure was maintained as low as $10^{-5}$ Torr during plasma processing, good for ion source and quadrupole operation. At base pressure, the major impurity was $H_2O$ and the second major impurity was $CO/N_2$ about 10%. During sputtering of Mg in Ar, $H_2$ soared up to 10.7% of Ar and remained as the major impurity during all the later process time. When $O_2$ was mixed with Ar, the partial pressure of Ar decreased in proportion to $O_2$ flow rate and that of $H_2$ dropped down to 2%. It was understood as Mg target surface was oxidized to stop $H_2$ emission by Ar ion sputtering. With ICP turned on, the major impurity $H_2$ was converted into $H_2O$ consuming $O_2$ and C was also oxidized to evolve CO and $CO_2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.222-225
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• 2000

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $Po_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$ (onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a smd amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in d of the obtained films.

• Mass Spectrometry Letters
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• 제12권1호
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• pp.26-30
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• 2021

The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 101~104 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done following standard relative sensitivity factor. The concentration of boron in silicon was determined 1017~1021 atoms/㎤. The technique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 춘계학술발표회
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• pp.15-15
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• 1997

• 대한전자공학회논문지
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• 제23권6호
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• pp.929-935
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• 1986

In this paper, we describe the physical modelling and numerical aspects of a program called PRECISE(Program for Efficient Calculation of Impurity Profile in Semiconductor by Elimination) which calcualtes a two-dimensional impurity profile in silicon due to diffusion and ion implantation steps. The PRECISE enables rapid prediction of the two-dimensional impurity profile near the mask edge-or the bird's beak during the local oxidation process. This has been developed by modifying the existing one-dimentional simulator, DIFSIM(DIFfusion SIMulator to include models for arsenic diffusion and emitter dip effect which were found out to agree fairly well with the xperimental data.