• Title/Summary/Keyword: Ion extraction

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Separation of Palladium(II) and Ruthenium(IV) from Hydrochloric Acid Solution by Solvent Extraction (염산용액에서 용매추출에 의한 팔라듐(II)과 루테늄(IV)의 분리)

  • Lee, Man-seung;Ahn, Jong-Gwan
    • Korean Journal of Metals and Materials
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    • v.47 no.6
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    • pp.349-355
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    • 2009
  • In the solvent extraction of Ru(IV) with Alamine336, it was found that Ru took part in the reaction as $RuCl_{6}_^{2-}$ in the HCl concentration range of 1 to 5 M. Interaction parameter between hydrogen ion and $RuCl_{6}_^{2-}$ was estimated by applying Bromley equation to the extraction data. From the mixed solutions of Pd(II) and Ru(IV), the distribution coefficients of Pd were found to be higher than those of Ru in the experimental ranges. Separation factor between Pd and Ru rapidly increased with the decrease of Alamine336 concentration. About 60% of the Ru from the mixed solutions was extracted by TBP at 8.3 M HCl, while Pd was not extracted in the HCl concentration range of 1.6 to 8.3 M.

Distribution of Zr(IV) Ion Species in Aqueous Solution (수용액(水溶液)에서 지르코늄이온의 농도분포(濃度分布))

  • Lee, Man-Seung;Lee, Hwa-Young
    • Resources Recycling
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    • v.20 no.6
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    • pp.56-62
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    • 2011
  • Zirconium is used in nuclear reactors as a structural material due to its excellent corrosion resistance and to low neutron crosssection. Variation in the distribution and solubility of Zr(IV) with solution pH was obtained. Distribution of Zr(IV) containing species in HCl and $HNO_3$ solution was analyzed by considering the complex formation of Zr(IV) species with the anion of the inorganic acid. Bromley interaction parameter between $ZrO^{2+}$ and nitrate ion was estimated by using the reported data on the solvent extraction of Zr(IV) by Cyanex272 from $HNO_3$ solution. This Bromley parameter can be utilized in calculating extraction isotherm of Zr(IV) and in predicting the separation factor between Zr(IV) and Hf(IV).

Spectrophotometric Determination of Platinum (IV) with 2-Oximino-1-indanone (2-Oximino-1-indanone을 이용한 Pt(IV) ion의 정량에 관한 연구)

  • 김정균;유미경;원미숙;심윤보;고영심
    • YAKHAK HOEJI
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    • v.28 no.2
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    • pp.61-67
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    • 1984
  • A method is described for the spectrophotometric determination of platinum (IV) with 2-oximino-1-indanone based on solvent extraction of Pt:2-oximino-1-indanone complex. The 2-oximino-1-indanone reacted with Pt(IV) to form a dark-orange complex which shows a characterisic maximum absorption at 342nm. The optimum PH for the platinum extraction lies between 5.4~8.0. Beer's law obeys up to 0.98-16.3ppm of platinum (IV) and the molar absorption coefficient is $1.06{\times}10^{-4}L.mol^{-1}.cm^{-1}$. The relative standard deviation of the method was $\times2.1%$. The composition of the complex is estimated to be Pt : In= 1 : 1, by the mole ratio method and ion exchange resin experiment. The optimum condition for the determination of platinum has been studied in detail. The 2-oximin-1-indanone is found to be a selectivereagent for the determination of platinum, since the synthesixed 2-oximino-1-indanone did not react with other metals such as cobalt, cadmium, copper, manganese nickel, iron, lead and zinc, to form the complex. In this studies, we have also clarified Sindhwani and Singh's spectrophotometric determination data of various metals with acenaphthenequinone monooxime (Talanta 20,248, 1973), whose results were not correct.

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Extraction of Mg ion and Fabrication of Mg Compound from Ferro-Nickel Slag (페로니켈 슬래그로부터 Mg 이온의 용출특성과 화합물 제조)

  • Chu, Yong-Sik;Lim, Yoo-Ree;Park, Hong-Bum;Song, Hun;Lee, Jong-Kyu;Lee, Seung-Ho
    • Journal of the Korean Ceramic Society
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    • v.47 no.6
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    • pp.613-617
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    • 2010
  • Ferro-Nickel slag is one of the by-products in Ferro-Nickel manufacturing process. The slag is composed of $SiO_2$, MgO, $Fe_2O_3$ and others. But the slag has been buried at landfill despite having valuable elements. This study tried to extract Mg ion and fabricate Mg compound from ferro-nickel slag using hydrochloric acid solution. Mg ion was extracted with Si, Fe and other ions in HCl solution. So reprocess was needed for gaining high purity Mg ion. It was thought that Si ion or $SiO_2$ precipitated in HCl solution and removed from solution in filtering process. Fe ion converted into $Fe(OH)_3$ after reacted with $NH_4OH$ and precipitated in HCl solution. After these process, the filtrate was composed of high purity Mg ion. $MgCl_2{\cdot}NH_4Cl{\cdot}6H_2O$ was obtained through drying of filtrate and this product was changed into MgO by burning process ($600^{\circ}C$-30 min). That is, 1st material or solution for manufacturing 2nd product was fabricated using acid dissolution method and other treatments.

Development and Testing of a Prototype Long Pulse Ion Source for the KSTAR Neutral Beam System

  • Chang Doo-Hee;Oh Byung-Hoon;Seo Chang-Seog
    • Nuclear Engineering and Technology
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    • v.36 no.4
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    • pp.357-363
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    • 2004
  • A prototype long pulse ion source was developed, and the beam extraction experiments of the ion source were carried out at the Neutral Beam Test Stand (NBTS) of the Korea Superconducting Tokamak Advanced Research (KSTAR). The ion source consists of a magnetic bucket plasma generator, with multi-pole cusp fields, and a set of tetrode accelerators with circular apertures. Design requirements for the ion source were a 120kV/65A deuterium beam and a 300 s pulse length. Arc discharges of the plasma generator were controlled by using the emission-limited mode, in turn controlled by the applied heating voltage of the cathode filaments. Stable and efficient arc plasmas with a maximum arc power of 100 kW were produced using the constant power mode operation of an arc power supply. A maximum ion density of $8.3{\times}10^{11}\;cm^{-3}$ was obtained by using electrostatic probes, and an optimum arc efficiency of 0.46 A/kW was estimated. The accelerating and decelerating voltages were applied repeatedly, using the re-triggering mode operation of the high voltage switches during a beam pulse, when beam disruptions occurred. The decelerating voltage was always applied prior to the accelerating voltage, to suppress effectively the back-streaming electrons produced at the time of an initial beam formation, by the pre-programmed fast-switch control system. A maximum beam power of 0.9 MW (i.e. $70\;kV{\times}12.5\;A$) with hydrogen was measured for a pulse duration of 0.8 s. Optimum beam perveance, deduced from the ratio of the gradient grid current to the total beam current, was $0.7\;{\mu}perv$. Stable beams for a long pulse duration of $5{\sim}10\;s$ were tested at low accelerating voltages.

Synergistic Solvent Extraction of Manganese(II) by using Cupferron and Tetrabutylammonium ion (Cupferron과 Tetrabutylammonium ion을 이용한 Mn(II)의 상승용매 추출에 관한 연구)

  • In, Gyo;So, Jin-Hwan;Choi, Jong-Moon;Kim, Young-Sang
    • Analytical Science and Technology
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    • v.17 no.1
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    • pp.1-7
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    • 2004
  • The synergistic solvent extraction of Mn(II) by N-nitroso-N-phenylhydroxylamineammonium salt (cupferron) and tetrabutylammonium ion ($TBA^+$) has been studied. In the presence of $TBA^+$, over 95% Mn(II) was extracted from an aqueous solution into chloroform by the cupferron in the pH range of 4 to 10. But a part of Mn(II) was extracted with only cupferron. The ternary complex of Mn(II) was more efficiently extracted into $CH_2Cl_2$ and $CHCl_3$ than other nonpolar solvents. The extracted Mn(II) was determined in the back-extracted $HNO_3$ solution by GF-AAS. This fixed procedure was applied to the determination of trace Mn(II) in tap water samples of pH 5.0. The detection limit equivalent to 3 times standard deviation of the background absorption was 0.37 ng/mL and Mn(II) was determined with the range of 0.4 to 1.01 ng/mL in our laboratory's tap water. And the recovery was 94 to 107% in samples in which 2.0 ng/mL Mn(II) was spiked. The interferences of common concomitant elements such as Cu(II), Ca(II), Fe(III) and so on were not shown up to $10{\sim}20{\mu}g/mL$. From these results, this procedure could be concluded to be applied for the determination of trace Mn(II) in other environmental water samples.

Recovery of phosphoric acid from the waste acids in semiconductor manufacturing process (반도체 제조공정에서 발생하는 혼산폐액으로부터 고순도 인산 회수)

  • Park, Sung-Kook;Roh, Yu-Mi;Lee, Sang-Gil;Kim, Ju-Yup;Shin, Chang-Hoon;Ahn, Jae-Woo
    • Proceedings of the Korean Institute of Resources Recycling Conference
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    • 2006.05a
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    • pp.90-94
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    • 2006
  • The waste solution discharged from the LCD manufacturing process contains acids like nitric, acetic and phosphoric acid and metal ions such as Al, Mo and other impurities. It is important to removal of impurities to tess than 1ppm in phosphoric acid to reuse as an etchant because the residual impurities even in sub-ppm concentration in semiconductor materials play a major role on the electronic properties. In this study, we have been clearly established that a mixed system of solvent extraction, diffusion dialysis and ion-exchange technique, which made individually the most of characteristics is developed to commercialize in an efficient system for recovering the high-purity phosphoric acid. By applying vacuum evaporation, the yield of the process are almost 99% removal of nitric acid and acetic acid was achieved. And by applying the solvent extraction method with tri-octyl phosphate(TOP) as an extractant, the removal of acetic and nitric acid from the acid mixture was achieved effectively at the ratio O/A=1/3 with four stages and the stripping of nitric acid from organic phase is attained at a ration of O/A=1 with six stages by distilled water. About 97% and 76% removal of Al and Mo were achieved by diffusion dialysis. Essentially complete less than 1ppm removal of Al, Mo by using ion exchange ion resin and purification of the phosphoric acid was obtain.

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High rate deposition of poly-si thin films using new magnetron sputtering source

  • Boo, Jin-Hyo;Park, Heon-Kyu;Nam, Kyung-Hoon;Han, Jeon-Geon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.186-186
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    • 2000
  • After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

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Recovery of high-purity phosphoric acid from the waste acids in semiconductor manufacturing process (반도체(半導體) 제조공정(製造工程)에서 발생하는 혼산폐액(混酸廢液)으로부터 고순도(高純度) 인산회수(燐酸回收))

  • Park, Sung-Kook;Roh, Yu-Mi;Lee, Sang-Gil;Kim, Ju-Yup;Shin, Chang-Hoon;Kim, Jun-Young;Ahn, Jae-Woo
    • Resources Recycling
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    • v.15 no.5 s.73
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    • pp.26-32
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    • 2006
  • The waste solution discharged from the LCD manufacturing process contains acids like nitric, acetic and phosphoric acid and metal ions such as Al, Mo and other impurities. It is important to remove impurities less than 1 ppm in phosphoric acid to reuse as an etchant because the residual impurities even in sub-ppm concentration in semiconductor materials play a major role on the electronic properties. In this study, a mixed system of solvent extraction, diffusion dialysis and ion-exchange was developed to commercialize in an efficient system fur recovering the high-purity phosphoric acid. By vacuum evaporation, almost 99% of nitric and acetic acid was removed. And by solvent extraction method with tri-octyl phosphate (TOP) as an extractant, the removal of acetic and nitric acid from the acid mixture was achieved effectively at the ratio A/O=1/3 with 4th stage of extraction stage. About 97.5% of Al and 36.7% of Mo were removed by diffusion dialysis. Essentially almost complete removal of metal ions and purification of high-purity phosphoric acid could be obtained by using ion exchange.

Optimization of solid phase extraction and simultaneous determination of trace anions in concentrated hydrofluoric acid by ion chromatography (불산 중 극미량 음이온 분석을 위한 고상 추출법 및 이온크로마토그래프를 이용한 동시분석법 확립)

  • Yoon, Suk-Hwan;Jo, Dong-ho;Kim, Hyun-Ji;Shin, Ho-Sang
    • Analytical Science and Technology
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    • v.29 no.5
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    • pp.219-224
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    • 2016
  • 불산 중 극미량 음이온의 고상추출과 이온크로마토그래프를 이용한 고감도 분석법이 개발되었다. 불산 중 불소이온이 고상에 의해 제거하였고 이어서 음이온 (F, CH3COO, Cl, Br, NO3, PO43−, SO42−)들이 이온크로마토그래프를 이용하여 연속적으로 분리하였다. 고상 추출법에 영향을 주는 각 인자들 (흡착제의 선택, 시료의 부피 및 pH, 용출 용액과 용출용액의 부피)을 결정하였으며 그 결과 흡착제로서 Oasis WAX 컬럼이 가장 우수하였고 1.0 mL의 시료부피, 용출용액으로 50 mM 초산암모늄염 5 mL가 분리능에서 가장 우수하였다. 개발한 방법에 의한 음이온 (Cl, Br, NO3, PO43−, SO42−)들의 방법검출한계는 25 % 불산용액 (w/w) 중에 0.04~0.30 µg/L의 범위를 보였고 정밀도는 20.0와 40.0 µg/L의 농도에서 5 % 이내를 보였다. 한 제조회사에 의한 25 % 불산 중 음이온의 4.2에서 47.5 µg/L의 범위로 모두 검출되었다. 이 방법은 시험절차가 간단하고, 재현성 및 감도가 좋아서 반도체회사에서 불산 중 음이온 불순물을 정도 관리하는데 매우 유용한 방법이 될 것으로 판단된다.