• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.358-358
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• 2010

Ion beam bombardment at low energy forms nanosize patterns such as ripples, dots or wrinkles on the surface of polymers in ambient temperature and pressure. It has been known that the ion beam can alter the polymer surface that induces skins stiffer or the density higher by higher compressive stress or strain energies associated with chain scissions and crosslinks of the polymer. Atomic scale structure evolution in polymers is essential to understand a stress generation mechanism during the ion beam bombardment, which governs the nanoscale surface structure evolution. In this work, Molecular Dynamics (MD) simulations are employed to characterize the phenomenon occurred in bombardment between the ion beam and polymers that forms nanosize patterns. We investigate the structure evolution of Low Density Polyethylene (LDPE) at 300 K as the polymer is bombarded with Argon ions having various kinetic energies ranging from 100 eV to 1 KeV with 50 eV intervals having the fluence of $1.45\;{\times}\;1014 #/cm2$. These simulations use the Reactive Force Field (ReaxFF), which can mimic chemical covalent bonds and includes van der Waals potentials for describing the intermolecular interactions. The results show the details of the structural evolution of LDPE by the low energy Ar ion bombardment. Analyses through kinetic and potential energy, number of crosslinks and chain scissions, level of local densification and motions of atoms support that the residual strain energies on the surface is strongly associated with the number of crosslinks or scissored chains. Also, we could find an optimal Ar ion beam energy to make crosslinks well.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.134-136
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• 1993

Microelectronic fabrication technology .is based on the use of lithsgraphy to create small linewidths and patterns that make up ULSI. In previous papers, we discussed the theoretically calculated values such as ion range, ion concentration,ion transmission coefficient and the defocused ion beam-induced characteristics in a-Se$_{75}$Ge$_{25}$. In this paper, the typical Monte Carlo (MC) simulation results and p개cedures for the focused ion beam lithography were presented. The interaction and scattering of ions with the resist depend on the beam energy, impact parameter arid resist parameters. For ion exposure simulations, the quantity of interest is the spatial distribution of energy deposited by ions in the resist due to interaction phenomena with resist ions.s.s.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2005.05a
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• pp.30-34
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• 2005

This paper describes the design and manufacturing of a focused-ion-beam machining system which can make small features of nano size. We use a SIMION simulator in order to obtain the design data of an ion column. The simulation result shows that the focal length of ion beam decreases as the applied voltage of object lens increases. Finally, we obtained the good images of a mesh of 50 micrometers by using the adjustment of applied voltage, acceleration power, and dimension of each elements.

• Design & Manufacturing
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• v.14 no.3
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• pp.63-70
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• 2020

As the consumer market in the VR(virtual reality) and the head-up display industry grows, the demand for 5-axis machines and grooving machines using on a ultra-precision machining increasing. In this paper, ultra-precision diamond tools satisfying the cutting edge width of 500 nm were developed through the process research of a focused ion beam. The material used in the experiment was a single-crystal diamond tool (SCD), and the equipment for machining the SCD used a focused ion beam. In order to reduce the influence of the Gaussian beam emitted from the focused ion beam, the lift-off process technology used in the semiconductor process was used. 2.9 ㎛ of Pt was coated on the surface of the diamond tool. The sub-micron tool with a cutting edge of 492.19 nm was manufactured through focused ion beam machining technology. Toshiba ULG-100C(H3) equipment was used to process fine-pattern using the manufactured ultra-precision diamond tool. The ultra-precision machining experiment was conducted according to the machining direction, and fine burrs were generated in the pattern in the forward direction. However, no burr occurred during reverse machining. The width of the processed pattern was 480 nm and the price of the pitch was confirmed to be 1 ㎛ As a result of machining.

• Nuclear Engineering and Technology
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• v.35 no.3
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• pp.226-233
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• 2003

The discharge characteristics of a prototype ion source was investigated, which was developed and upgraded for the NBI (Neutral Beam Injection) heating system of KSTAR (Korea Superconducting Tokamak Advanced Research). The ion source was designed for the arc discharge of magnetic bucket chamber with multi-pole cusp fields. The ion source was discharged by the emission-limited mode with the control of filament heating voltage. The maximum ion density was 4 times larger than the previous discharge controlled by a space-charge-limited mode with fully heated filament. The plasma (ion) density and arc current were proportional to the filament voltage, but the discharge efficiency was inversely proportional to the operating pressure of hydrogen gas. The maximum ion density and arc current were obtained with constant arc voltage ($80{\sim}100V$), as $8{\times}10^{11}cm^{-3}$ and 1200 A, respectively. The estimated maximum beam current was about 35 A, extracted by the accelerating voltage of 80kV.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.262-269
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• 2013

Though focused ion beam (FIB) is one of the candidates to fabricate the nanoscale patterns, precision milling of nanoscale structures is not straightforward. Thus this poses challenges for novice FIB users. Optimal determination in FIB parameters is a crucial step to fabricate a desired nanoscale pattern. There are two main FIB parameters to consider, beam current (beam size) and dose (beam duration) for optimizing the milling condition. After fixing the dose, the proper beam current can be chosen considering both total milling time and resolution of the pattern. Then, using the chosen beam current, the metal nano hole structure can be perforated to the required depth by varying the dose. In this experiment, we found the adequate condition of $0.1nC/{\mu}m^2$ dose at 1 pA Ga ion beam current for 100 nm thickness perforation. With this condition, we perforated the periodic square array of elliptical nano holes.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.76-76
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• 2012

Surface engineering of polymers has a broad array of scientific and technological applications that range from tissue engineering, regenerative medicine, microfluidics and novel lab on chip devices to building mechanical memories, stretchable electronics, and devising tunable surface adhesion for robotics. Recent advancements in the field of nanotechnology have provided robust techniques for controlled surface modification of polymers and creation of structural features on the polymeric surface at submicron scale. We have recently demonstrated techniques for controlled surfaces of soft and relatively hard polymers using ion beam irradiation and plasma treatment, which allows the fabrication of nanoscale surface features such as wrinkles, ripples, holes, and hairs with respect to its polymers. In this talk, we discuss the underlying mechanisms of formation of these structural features. This includes the change in the chemical composition of the surface layer of the polymers due to ion beam irradiation or plasma treatment and the instability and mechanics of the skin-substrate system. Using ion beam or plasma irradiation on polymers, we introduce a simple method for fabrication of one-dimensional, two-dimensional and nested hierarchical structural patterns on polymeric surfaces on various polymers such as polypropylene (PP), polyethylene (PE), poly (methyl methacrylate) PMMA, and polydimethylsiloxane (PDMS).

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.482-486
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• 2004

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies, such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper presents that the recent development and our research goals in FIB nano machining technology are given. The emphasis will be on direct milling, or chemical vapor deposition techniques (CVD), and this can distinguish the FIB technology from the contemporary photolithography process and provide a vital alternative to it. After an introduction to the technology and its FIB principles, the recent developments in using milling or deposition techniques for making various high-quality devices and high-precision components at the micro/nano meter scale are examined and discussed. Finally, conclusions are presented to summarize the recent work and to suggest the areas for improving the FIB milling technology and for studying our future research.

• Nuclear Engineering and Technology
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• v.56 no.1
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• pp.70-77
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• 2024

A low energy ion irradiation system based on the deuterium arc ion source with a high perveance of 1 µP for a single extraction aperture has been successfully developed for the investigation of ion irradiation on plasma-facing components including the first mirror of plasma optical diagnostics system. Under the optimum operating condition for mirror testing, the ion source has a beam energy of 200 eV and a current density of 3.7 mA/cm². The ion source comprises a magnetic cusp-type plasma source, an extraction system, a target system with a Faraday cup, and a power supply control system to ensure stable long time operation. Operation parameters of plasma source such as pressure, filament current, and arc power with D₂ discharge gas were optimized for beam extraction by measuring plasma parameters with a Langmuir probe. The diode electrode extraction system was designed by IGUN simulation to optimize for 1 µP perveance. It was successfully demonstrated that the ion beam current of ~4 mA can be extracted through the 10 mm aperture from the developed ion source. The target system with the Faraday cup is also developed to measure the beam current. With the assistance of the power control system, ion beams are extracted while maintaining a consistent arc power for more than 10 min of continuous operation.

• Applied Microscopy
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• v.49
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• pp.4.1-4.2
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• 2019

We applied the advanced bitmap-assisted patterning function of focused ion beam to fabricate microscale sculpture of the 'BangTanSoNyeonDan' known as BTS members, the world-wide famous K-pop boyband. With the help of an electron microscope, you can carve your idols on your accessories at micro scale. Fun applications of electron microscopes are not limited to science.