• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 2005.05a
• /
• pp.19-23
• /
• 2005

In order to develop a high brightness ion source using plasma, the ion beam extraction system with an aperture of $100{\mu}m$ in diameter has been designed and constructed. It is observed that over 500nA of He ion beam current can be extracted. With such an optimized condition, $\~10^3\;A/cm^2sr$ beam brightness can be measured by emittance scanner, which is believed to be a promising result for developing next generation FIB.

• Korean Journal of Materials Research
• /
• v.10 no.7
• /
• pp.459-463
• /
• 2000

Direct use of negative ions for modification of materials has opened new research such as charging-free ion implantation and new materials syntheses by pure kinetic bonding reactions. For these purposes, a new solid-state ce-sium ion source has been developed in the laboratory scale. In this paper, diamond like carbon(DLC) films were prepared on silicon wafer by a negative cesium ion gun. This system does not need any gas in the chamber; deposition occurs under high vacuum. The ion source has good control of the C- beam energy(from 80 to 150eV). The result of Raman spectrophotometer shows that the degree of diamond-like character in the films, $sp^3$ fraction, increased as ion beam energy increases. The nanoindentation hardness of the films also increases from 7 to 14 GPa as a function of beam energy. DLC films showed ultra-smooth surface(Ra~1$\AA$)and an impurity-free quality.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2004.10a
• /
• pp.925-928
• /
• 2004

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper was carried out some experiments and verifications of mechanism on FIB-CVD using SMI8800 made by Seiko. FIB-CVD has in fact proved to be commercially useful for repair processes because the beam can be focused down to 0.05$\mu\textrm{m}$ dimensions and below and because the same tool can be used to sputter off material with sub-micrometer precision simply by turning off the gas ambient. Recently the chemical vapour deposition induced ion beam has been required more deposition rate and accurate pattern because of trying to manufacture many micro and nano parts. Therefore this paper suggested the optimization parameters and discussed some mechanism of chemical vapour deposition induced ion beam on FIB-CVD for simple pattern.

• Nuclear Engineering and Technology
• /
• v.23 no.4
• /
• pp.426-437
• /
• 1991

The $He^{++}$ beam transport system of the SNU 1.5-MV Tandem Van de Graaff accelerator is analysed by ion optical approach. The program OPTRANS is developed to determine the optimum operating conditions of each ion optical component and to simulate ion beam transport. First order matrix formalism is used and the space charge effect is neglected. Optimum operating conditions for the transport of 0.5~3.0 MeV $He^{++}$ beam are determined by the use of the program OPTRANS. Initial ion beam omittance is assumed to be 0.5$\times$80.0 mm.mrad from the structure of the extraction electrode and the experiment of ion beam extraction. ion beam transport characteristics of each ion optical component according to the variation of the operating conditions are investigated, and operating conditions to minimize the beam size at each slit, stripping foil, and target are calculated. Optimum operating conditions obtained from the experiment of ion beam transport show a discrepancy of less than 15% compared with the calculated ones. From the simulation and experiment of ion beam trans-port, the validity of the calculated optimum operating conditions and the usefulness of the program OPTRANS are verified.

• Applied Science and Convergence Technology
• /
• v.27 no.3
• /
• pp.47-51
• /
• 2018

We fabricated an anode-type ion beam source and studied its driving characteristics of the initial extraction of ions using two driving mechanisms: a diffusion phenomenon and a charge repulsion phenomenon. For specimen exposed to the ion beam in two methods, the surface impurity element was investigated by using X-ray photoelectron spectroscopy. Upon Ar gas injection for plasma generation the ion beam source was operated for 48 hours. We found a Fe 2p peak 5.4 at. % in the initial ions by the diffusion mechanism while no indication of Fe in the ions released in the charge repulsion mechanism. As for a long operation of 200 min, the temperature of ion beam sources was measured to increase at the rate of ${\sim}0.1^{\circ}C/min$ and kept at the initial value of $27^{\circ}C$ for driving by diffusion and charge repulsion mechanism, respectively. In this study, we confirmed that the ion beam source driven by the charge repulsion mechanism was very efficient for a long operation as proved by little electrode damage and thermal stability.

• Nuclear Engineering and Technology
• /
• v.36 no.4
• /
• pp.357-363
• /
• 2004

A prototype long pulse ion source was developed, and the beam extraction experiments of the ion source were carried out at the Neutral Beam Test Stand (NBTS) of the Korea Superconducting Tokamak Advanced Research (KSTAR). The ion source consists of a magnetic bucket plasma generator, with multi-pole cusp fields, and a set of tetrode accelerators with circular apertures. Design requirements for the ion source were a 120kV/65A deuterium beam and a 300 s pulse length. Arc discharges of the plasma generator were controlled by using the emission-limited mode, in turn controlled by the applied heating voltage of the cathode filaments. Stable and efficient arc plasmas with a maximum arc power of 100 kW were produced using the constant power mode operation of an arc power supply. A maximum ion density of $8.3{\times}10^{11}\;cm^{-3}$ was obtained by using electrostatic probes, and an optimum arc efficiency of 0.46 A/kW was estimated. The accelerating and decelerating voltages were applied repeatedly, using the re-triggering mode operation of the high voltage switches during a beam pulse, when beam disruptions occurred. The decelerating voltage was always applied prior to the accelerating voltage, to suppress effectively the back-streaming electrons produced at the time of an initial beam formation, by the pre-programmed fast-switch control system. A maximum beam power of 0.9 MW (i.e. $70\;kV{\times}12.5\;A$) with hydrogen was measured for a pulse duration of 0.8 s. Optimum beam perveance, deduced from the ratio of the gradient grid current to the total beam current, was $0.7\;{\mu}perv$. Stable beams for a long pulse duration of $5{\sim}10\;s$ were tested at low accelerating voltages.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.259-259
• /
• 2008

The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

• Journal of Korean Vacuum Science & Technology
• /
• v.6 no.2
• /
• pp.101-104
• /
• 2002

Er doped SiOx films have been synthesized by ion beam assisted deposition (IBAD). The morphology and microstructure of films and their annealing behaviors have been examined by using scanning electron microscopy and x-ray diffraction. The composition and properties of films have been systematically investigated.

• Journal of Korean Vacuum Science & Technology
• /
• v.7 no.1
• /
• pp.1-7
• /
• 2003

The pressure distributions in the test stand built for developing KSTAR NBI ion sources were obtained using a network system composed of conductance elements modeling the ion source, the neutralizer, and other beam line components. The allowable regime was defined on the coordinates of the gas supply rate to the ion source and the neutralizer, considering the proper conditions of the three critical parameters, the ion source pressure for good arc discharge, the pressure integral in the neutralizer for sufficient neutralization, and the chamber pressure for minimum neutral beam loss. The neutral beam evolution along the path from the ion source extraction grid to the calorimeter through the neutralizer, the bending magnet and the vacuum chamber was estimated for typical pressure distributions.

• Journal of the Korean Society for Precision Engineering
• /
• v.28 no.8
• /
• pp.966-974
• /
• 2011

The use of ion beams in the micro/nano scale is greatly increased by technology development. Especially, focused ion beams (FIBs) have a great potential to fabricate the device in sub micro scale. Nevertheless, FIB has several limitations, surface swelling in low ion dose regime, precipitation of incident ions, and the redeposition effect due to the sputtered atoms. In this research, we demonstrate a way which can be used to fabricate mold structures on a silicon substrate using FIBs. For the purpose of the demonstration, two essential subjects are necessary. One is that focused ion beam diameter as well as shape has to be measured and verified. The other one is that the accurate rotational symmetric model of ion-solid interaction has to be mathematically developed. We apply those two, measured beam diameter and mathematical model, to fabricate optical lenses mold on silicon. The characteristics of silicon mold fabrication will be discussed as well as simulation results.