• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.613-616
• /
• 2001

Bi$_2$Sr$_2$CuO$_{x}$ thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 and 90 wt%-ozone/oxygen mixture gas of typical pressure of 1~9$\times$10$^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.n.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.77-80
• /
• 1999

Bi$_2$Sr$_2$CuO$\sub$x/ thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) method. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• Korean Journal of Optics and Photonics
• /
• v.14 no.3
• /
• pp.331-337
• /
• 2003

This paper represents 50 ㎓ narrow band pass filters for fiber optical communication fabricated by dual ion beam sputtering method. We have analyzed the characteristics of the TA$_2$ $O_{5}$ and $SiO_2$ single layers in order to optimize the process conditions for the 50 ㎓ narrow band pass filters, and controlled the film thickness uniformity to less than 0.1 nm deviation by dual peak spike filter pre-deposition. We designed and fabricated 50 ㎓ narrow band pass filters that consist of 216 layers including 4 cavities based on quarter wave optical thickness. Class substrates with high thermal expansion coefficients were used to reduce the film stress. Anti-reflection coating at the rear side of the substrate was also needed to reduce the optical thickness errors of the Optical Monitoring System caused by multiple beam interference between the front side and the rear side of substrate. The optical characteristics of this 50 ㎓ narrow band pass filters are insertion loss of 0.40 ㏈, pass band ripple of 0.20 ㏈, and pass bandwidth at -0.5 ㏈ of 0.20 nm. and isolation bandwidth at -25 ㏈ of 0.6 nm, which satisfy specifications of dense WDM system in fiber optical communications.tions.

• Journal of the Korean Vacuum Society
• /
• v.8 no.1
• /
• pp.36-42
• /
• 1999

Field emission behaviors from diamond-like carbon films were investigated. The films were deposited on n-type Si wafer by ion beam sputtering method using 3 cm Kaufman type ion source. Regardless of the film thicknesses and atomic bond structure, the emission current was much enhanced by electrical breakdown between anode and the film surface. The effective work function was estimated to be about 0.1 eV. In order to identify the emission site, tungsten tip was scanned the damaged region damaged region but localized to a specific site. Analysis using Auger electron spectroscopy and SEM shows that SiC compound was not a sufficient condition for the electron emission. This result showed that the enhanced emission was mainly due to the changes in the chemical bond of the damaged region rather than the enhanced electric field caused by the morphological change.

• Proceedings of the KIEE Conference
• /
• 1999.07e
• /
• pp.2236-2238
• /
• 1999

This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by RF unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP. The minimum discharge voltage is obtained for the sample of substrate holder bias voltage -10V. The main factors that improves the discharge characteristics by applied bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process Moreover, the anti-sputtering characteristics of MgO thin film by UBMS is more excellent than that of balanced magnetron sputtering(BMS) and E-beam evaporation method.

• Nuclear Engineering and Technology
• /
• v.55 no.4
• /
• pp.1287-1299
• /
• 2023

A new Monte-Carlo-based computer program (RDS-BASIC) is developed to simulate the transport of energetic ions in pure matter. This computer program is utilizing an algorithm that uses detailed numerical solutions for the classical scattering integral for evaluating the outcomes of the binary collision processes. This approach is adopted by several prominent similar simulation programs and is known to provide results with higher accuracy compared to other approaches that use approximations to shorten the simulation time. Furthermore, RDS-BASIC simulation program contains special methods to reduce the displacement energy threshold of surface atoms. This implementation is found essential for accurate simulation results for sputtering yield in the case of very low energy ions irradiation (near sputtering energy threshold) and also successfully solve the problem of simultaneously obtaining an acceptable number of atomic displacements per incident ions. Results of our simulation for several irradiation systems are presented and compared with their respective TRIM (SRIM-2013) and the state-of-the-art SDTrimSP simulation results. Our sputtering simulation results were also compared with available experimental data. The simulation execution time for these different simulation programs has also been compared.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2001.11a
• /
• pp.35-35
• /
• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• Journal of the Korean Vacuum Society
• /
• v.12 no.2
• /
• pp.112-117
• /
• 2003

MgO films is widely used in plasma display panel (PDP) technology. In this work, structural and optical properties of the MgO films deposited by e-beam evaporation, reactive magnetron sputtering, which are commercially used, and arc deposition were compared. MgO thin films were deposited on glass substrates by vacuum arc deposition equipment using a magnesium metal target at various oxygen gas flows. In order to investigate the packing density by ellipsometer, to measure reasonable erosion-rates of the MgO protective layers, we introduced an acceleration test method, namely, Ar+ ion beam induced erosion test. Also, XPS and UV test were adopted to examine the effect of the moisture on the optical transmittance of the MgO protective layers, which showed that these of MgO films by arc deposition method sustained more 90% and were insensitive to effect of the moisture. XRD and AFM have been also used to study behaviors of the structure and surface morphology.

• Korean Journal of Optics and Photonics
• /
• v.22 no.2
• /
• pp.90-95
• /
• 2011

We propose a super-thin and light-weight liquid crystal cell, in which glass substrates are eliminated and polarizers are used as substrates. We fabricate a polarizer substrate by depositing a-SiOX as a buffer layer, indium-tin-oxide as a transparent conducting layer, and a-SiOX as an alignment layer on a polarizer sequentially at a low temperature. We use the ion-beam method to align liquid crystals on polarizer substrates.

• Journal of the Korean Society for Heat Treatment
• /
• v.16 no.6
• /
• pp.329-334
• /
• 2003

Microstructure and mechanical properties of $(Ti_{1-x}Alx)N$ films, Produced by the the Ion Beam Sputtering(IBS) method, were studied by changing the Ti, Al contents. The compositions of films determined by RBS were $(Ti_{0.75}Al_{0.25})N$, $(Ti_{0.61}Al_{0.39})N$ and $(Ti_{0.5}Al_{0.5})N$, and XPS binding energies of Ti2P, A12p and N1s shifted to higher energies than those of pure Ti, Al and N, which indicated that nitrides were formed. XRD results indicated that the NaCl structure for $$x{\leq_-}0.39$$ changed into amorphous structure at x=0.5. For films with $$x{\leq_-}0.39$$, the lattice parameter decreased in proportion to the Al content. Nanoindentation hardness value were above HV=3300 at Al content up to x=0.39. However, the hardness of films with x=0.5 abruptly decreased to HV=1800, and this lower hardness values were attributed to different crystal structure. Critical load(Lc) in scratch test showed 23N at x=0.25, 22N at x=0.39 and 22N at x=0.5, which indicated that films with different Al contents showed similar adhesion behavior.