• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.1-8
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• 2004

The SOI wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by TRIM simulation that 65 keV proton implantation is required for the standard SOI wafer (200 nm SOI, 400 nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the 6∼$9\times10^{16}$ $H^{+}/\textrm{cm}^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. The depth distribution of implanted hydrogen has been experimentally confirmed by ERD and SIMS measurements. The microstructure evolution in the damaged layer was also studied by X-TEM analysis.

• Journal of Radiation Protection and Research
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• v.18 no.1
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• pp.25-35
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• 1993

To develop a technique of theoretical alpha track density calculation for comparison with measured track density, an electrostatic ion spectrometer was specially designed and fabricated. The mobility spectrum of first radon daughter(Po-218) in the range of $0.07{\sim}5.0cm^2/V\;s$ from the radon chamber was measured using-the electrostatic ion spectrometer. Measurement was taken in a radon chamber operated using dry particle free air passed through silica gel, activated charcoal and molecular sieve filters. The mobility of a new-born Po-218 ion measured by the electrostatic ion spectrometer was determined to be $1.92cm^2/V\;s$. A comparison of the theoretical and measured alpha track densities was completed and uncertainties concerning the shape of the spectrum were analyzed. It was found that the discrepancies in track densities are primarily Que to the neglect of wall loss of ions in the theoretical track density calculation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.143-150
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• 1997

The electrical properties of polysilicon thin films implanted with $B_2H_6$ diluted in $H_2$ as dopant source using ion mass doping technique and the effect of radiation damage on the dopant activation behavior were investigated. Comparing the SIMS profiles of boron in polysilicon films with that obtained from computer simulation using TRIM92 the most probable ion species were $B_2H_x\;^+$(x＝1, 2, 3‥‥) type molecular ions. As a result of the Implantation of energetic massive ions, a continuous amorphized layer was created in polysilicon films where the fraction of amorphized layer varied with doping time. This amorphization comes from the fact that mass separation of implanting species is not employed in this ion mass doping technique. In the dopant activation behavior, reverse annealing phenomenon appeared in the intermediate annealing temperature range for a severely damaged specimen. The experimental result showed that the off-state current of the p-channel polysilicon thin film transistor is dependent on the degree of radiation damage.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.537-537
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• 2013

Cyclotron-accelerated ion beams are used for various researches, such as nuclear physics, nuclear chemistry, biotechnology, and material sciences including radio-isotope production. Recently considerable applications are asked to the cyclotron development undertaken to meet user requirements of various ions'energies, intensities, and their pulsed beams. For instance, a cocktail beam acceleration technique rapidly changing the ion species and energies was developed to irradiating integrated circuit chips. Also a chopping system in a cyclotron injection line is considered for producing a pulsed ion beam with a relatively long period compared with that generated by the resonance frequency. For the research in neutron time-of-flight measurement, a single-pulsed beam with a repetition interval of the order of mili-seconds or longer is necessary to have a good resolution and to remove background events. In this paper a feasibility of pulsed beam with an external ion source is simulated by adopting a combination system of a chopper accompanying with a bunching stage in the injection line and an additional chopper after the exit of the cyclotron in order to produce beam pulses with a range of $1{\mu}s{\sim}1ms$ periods from a resonance RF cycle. The pulseperiod will be adjusted by chopping the number of beam bunches from the injected pulses in the injection line. However, the longer pulses will have reduced number of beam pulses and sacrificed beam currents. Because the beam users need an intense single pulsed beam, a careful tuning of the acceleration phase and a high-intense external ion source are necessary to achieve an intense single-pulsed beam from the cyclotron. It is essential to strictly match the acceleration phase of injected beams in the central region of the cyclotron to improve its efficiency. An effect of space charge at each pulse from the ion source will be also considered.

• Transactions of the Korean Society of Automotive Engineers
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• v.21 no.6
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• pp.49-57
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• 2013

In this study, we fabricated a parallelly connected Li-ion battery/supercapacitor hybrid cell to combine the advantageous characteristics of Li-ion battery and supercapacitor, high energy density and high power density, respectively, and investigated its discharging characteristics over a wide temperature range from -40 to $25^{\circ}C$. At the initial state of discharging of the hybrid cell, the power was mostly provided by the supercapacitor and then the portion of the Li-ion battery was gradually increased. By installing a switching system into the hybrid cell, which controls the discharging sequence of Li-ion battery and supercapacitor, the maximum power was improved by 40% compared with non switching system. In addition at low temperatures, the power and discharging time of the hybrid cell were significantly enhanced compared to a battery-alone system. The hybrid cell is expected to be applied in electric vehicles and small domestic appliances that require high power at initial discharging state.

• Journal of the Korean Chemical Society
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• v.27 no.5
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• pp.311-319
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• 1983

The dissociation constants of anilinium ion, o-toluidinium ion, phenol and o-chlorophenol were measured spectroscopically in aqueous solution over the temperature range of 10∼40$^{\circ}C$ and at the pressures up to 2,000 bars. The effects of temperature and pressure on the dissociation of the phenols are the same as those of the ordinary weak acids. Meanwhile the dissociation constants of anilinium ions are increased with temperature raising and decreased with pressure elevation. The effects of pressure on the constants can be explained by taking account of change of charge during dissociation reaction; there are increase in charge in the dissociation of phenols but anilinium ions are not. Several thermodynamic properties, ${\Delta}H^{circ}$,${\Delta}G^{circ}$, ${\Delta}S^{circ}$,${\Delta}V^{circ}$ and ${\beta}$ are calculated from those constants, and the dissociation reactions are discussed by them.

• Polymer(Korea)
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• v.30 no.6
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• pp.471-477
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• 2006

Ion exchange metal composite(IPMC) has toughness equivalent to the range of human's muscle, transformation-actuation force by relatively low voltage and the fast response time. Thus, as a new method for preparing thicker IPMC, the solution casting method to make the films of various thicknesses out of liquid nation was attempted in this study. To reduce the surface resistance of electrode, the first plated electrode prepared by Oguro method was replated with Au and Ir using ion beam assisted deposition(IBAD). The microstructures of electrode surfaces before and after IBAD plating were investigated using SEM. The change of water and ion-conductivity in IPMC were measured under applied voltage. The displacement and driving force of IPMCs with various thicknesses were measured to evaluate the driving properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.533-538
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• 2003

It has been shown that ion implantation produces remarkable improvements in surface-sensitive physical and chemical properties as well as other mechanical properties, in polymers. In this study, ion implantation was performed onto polymer, PC(polycarbonate), in order to investigate surface hydrophilic property through contact angle measurement using distilled water. PC was irradiated with N, Ar, Xe ions at the irradiation energy of $20\;{\sim}\;50keV$ and the dose range of $5{\times}10^{15},\;1{\times}10^{16},\;7{\times}10^{16}\;ions/cm^2$. The contact angle of water has been reduced with increasing fluence and ion mass but increased with increasing implanted energy. The changes of chemical and structural property are discussed in view of infrared spectroscopy and FT-IR, XPS, which shows increasing C-O bonding and C-C bonding. The root mean square of surface roughness examined by means of AFM changed smoothly from 0.387nm to 0.207nm and the change of wettability was discussed with respect to elastic and inelastic collisions obtained as results of TRIM simulation. It was found that wettability of the modified PC surface was affected on change of functional group and nuclear stopping or linear energy transfer(LET, energy deposited per unit track length per ion) that causes chain scission by displacing atom from polymer chains, but was not greatly dependant on surface morphology.

• Analytical Science and Technology
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• v.6 no.5
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• pp.489-499
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• 1993

Some sorption behaviors of U(VI) ion on Arsenazo I-XAD-2 chelating resin were investigated. This chelating resin was synthesized by the diazonium coupling of Amberlite XAD-2 resin with Arsenzo I chelating reagent and characterized by elementary analysis method and IR spectrometry. The optimum conditions for the sorption of U(VI) ion were examined with respect to pH, U(VI) ion concentration and shaking time. Total sorption capacity of this chelating resin on U(VI) ion was 0.39mmol U(VI)/g resin in the pH range of 4.0~4.5. This chelating resin was showed increased sorption capacity on the increased pH value. It was confirmed that sorption mechanism of U(VI) ion on the Arsenazo I-XAD-2 chelating resin was competition reacting between U(VI) ion and $H^+$ ion. Breakthrough volume and overall capacity of U(VI) ion measured by column were was 600 ml and 0.38 mmol U(VI)/g resin, respectively. The desorption of U(VI) ion was showed recovery of 90~96% using 3M $HNO_3$ and 3M $Na_2CO_3$ as a desorption solution. The separation and concentration of U(VI) ion from natural water and sea water was performed successfully by Arsenazo I-XAD-2 chelating resin.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.243-244
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• 2013

Over the past 15 years, several groups have incorporated radio-frequency quadrupole (RFQ) based instruments before the accelerator in accelerator mass spectrometry (AMS) systems for ion-gas interactions at low kinetic energy (＜40 eV). Most AMS systems arebased on a tandem accelerator, which requires negative ions at injection. Typically, AMS sensitivity abundance ratios for radioactive-to-stable isotope are limited to Xr/Xs ＞10^-15, and the range of isotopes that can be analyzed is limited because of theneed to produce rather large negative ion beams and the presence of atomic isobaric interferences after stripping. The potential of using low-kinetic energy ion-gas interactions for isobar suppression before the accelerator has been demonstrated for several negative ion isobar systems with a prototype RFQ system incorporated into the AMS system at IsoTrace Laboratory, Canada (Ontario, Toronto). Requisite for any such RFQ system applied to very rare isotope analysis is large transmission of the analyte ion. This requires proper phase-space matching between the RFQ acceptance and the ion beam phase space (e.g. 35 keV, ${\varphi}3mm$, +-35 mrad), and the ability to control the average ion energy during interactions with the gas. A segmented RFQ instrument is currently being designed at Korea Institute for Science and Technology (한국과학기술연구원, KIST). It will consist of: a) an initial static voltage electrode deceleration region, to lower the ion energy from 35 keV down to ＜40 eV at injection into the first RFQ segment; b) the segmented quadrupole ion-gas interaction region; c) a static voltage electrode re-acceleration region for ion injection into a tandem accelerator. Design considerations and modeling will be discussed. This system should greatly lower the detection limits of the 6 MV AMS system currently being commissioned at KIST. As an example, current detection sensitivity of 41Ca/Ca is limited to the order of 10^-15 while the 41Ca/Ca abundance in modern samples is typically 41Ca/Ca~10^-14 - 10^-15. The major atomic isobaric interference in AMS is 41K. Proof-of-principal work at IsoTrace Lab. has demonstrated that a properly designed system can achieve a relative suppression of KF3-/41CaF3- ＞4 orders of magnitude while maintaining very high transmission of the 41CaF3- ion. This would lower the 41Ca detection limits of the KIST AMS system to at least 41Ca/Ca~10^-19. As Ca is found in bones and shells, this would potentially allow direct dating of valuable anthropological archives and archives relevant to our understanding of the most pronounced climate change events over the past million years that cannot be directly dated with the presently accessible isotopes.