• 한국광학회지
• /
• 제9권3호
• /
• pp.162-167
• /
• 1998

CF4 이온빔보조증착법으로 굴절률이 유리보다 낮은 SiOxFy 박막을 제작하고 광학적, 구조적 및 화학적 특성을 연구하였다. End-Hall 이온총의 양극전압의 간소에 따라 SiOxFy 박막의 굴절률은 1.455까지 변하였으며, 이온빔 전류밀도의 증가에 따라서 굴절률은 1.462에서 1.430까지 변하였다. XPS와 FT-IR 분석으로부터 SiOxFy 박막의 F양이 증가함에 따라 Si-O 결합은 파수가 높은 쪽으로 이동하였고, F이 약 8.5at.%인 SiOxFy 박막은 OH 결합이 매우 감소하였으여, 박막 표면의 F이 H2O와 결합하여 탈착되는 것을 알았다. SiOxFy 박막의 응력은 0.3GPa 이하의 압축응력이었으며, 결정구조는 비정질이었다. SiOxFy 박막의 응용으로서 SiOxFy 박막과 흡수층 Si 박막을 이용하여 2층 반사방지막을 제작하였다.

• 한국재료학회지
• /
• 제14권12호
• /
• pp.835-839
• /
• 2004

The diamond thin films was deposited on Si(100) substrate by Hot Filament Chemical Vapor Deposition (HFCVD) method using supplied the $CH_{3}OH/H_{2}O$ mixtured gas with excess H_{2} gas. The role of hydrogen ion as the growth mechanism of the diamond deposit was examined and compared the $CH_{3}OH/H_{2}O$ with the $CH_4/H_2$. Pressures in the range of $1.1\sim290{\times}10^2$ Pa were applied and using $3.4\sim4.4$ kw power. It was investigated by Scanning Electron Microscopy(SEM) and Raman spectroscopy The H ion was etching the graphite and restrained from $sp^3\;to\;sp^2$. But excess $H_2$ gas was not helped diamond deposit using $CH_{3}OH/H_{2}O$ mixtured gas. It was shown that the role of hydrogen ion of deposited diamond films using $CH_{3}OH/H_{2}O$ was different from $CH_4/H_2$.

• 한국광학회지
• /
• 제11권5호
• /
• pp.306-311
• /
• 2000

본 논문에서는 초음파영역에서 진동하는 물체의 진동주파수와 크기를 측정할 수 있는 레이저 도플러 진동계(Laser Doppler Vibrometer, 이하 LDV)를 설계, 제작하였다. LDV의 광원으로는 파장이 632.8 nm인 He-Ne 레이저를 사용하였으며 Bragg셀에 의해 주파수가 천이되도록 한 마이켈슨형 간섭게 (Michelson interferometer)로 구성하였다. PIN다이오드의 출력은 중심주파수가 40 MHz인 주파수 변조된 신호이며, 이 신호를 증폭하고 주파수를 2.5MHz로 낮춘 후 디지털로 변환하였다. Digital Phase Locked Loop(이하 DPLL)를 사용하여 진동하는 표면의 속도에 비례하는 전압출력을 얻었으며, 이 신호로부터 진동주파수와 크기를 추출하고 주파수특성을 보상하기 위하여 마이크로프로세서를 사용하였다. 그 결과 300 kHz까지의 진동을 측정할 수 있었으며 300 kHz로 진동하는 경우 측정 가능한 최소진폭은 1 nm이었다. 본 연구에서 개발된 LDV는 대용량 전기기기의 부분방전에 의해 발생되는 초음파진동으로부터 최소형 전기 기기의 미세진동까지 측정하는 비접촉식 진동 측정에 사용할 수 있다고 사료된다.

• Nuclear Engineering and Technology
• /
• 제51권5호
• /
• pp.1428-1435
• /
• 2019

The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.

• 한국광학회:학술대회논문집
• /
• 한국광학회 1990년도 제5회 파동 및 레이저 학술발표회 5th Conference on Waves and lasers 논문집 - 한국광학회
• /
• pp.115-120
• /
• 1990

The spectroscopic properties of Cr3+-doped sapphire and Ti3+-doped sapphire fibers are reported. Tensile stress produces blue shifts of the R lines and changes in their radiative lifetimes and integrated intensities which can be correlated to stress-induced changes of the crystal-field parameters in a Cr3+-doped sapphire fiber. A net red shift of the zero phonon fluorescence line of 2Eg state and a decrease of the splittings of 2T2g state with uniaxial stress are observed in a Ti3+-doped sapphire. In excitation spectra the two peaks from the 2Eg state are shifted to the blue with different rates. The changes are attributed to the stress-induced changes of crystal field and Jahn-Teller effect.

• 한국가시화정보학회지
• /
• 제1권1호
• /
• pp.75-81
• /
• 2003

A custom micro-PIV optics assembly has been used to measure the flow fold inside a T-junction of a microchannel. The micro-PIV system consists of microscope objectives of various magnifications, a dichroic cube, and an 8-bit CCD camera. Fluorescent particles of diameters 620 nm have been used with a Nd:YAG laser and color filters. A programmable syringe pump with Teflon tubings were used to inject particle-seeded distilled water into the channel at flow rates of 2.0, 4.0, 6.0 mL/hr. The micro-channels are fabricated with PDMS with a silicon mold, then O$_{2}$ -ion bonded onto a slide glass. Results show differences in flow characteristics and resolution according to fluid injection rates, and magnifications, respectively. The results include PIV data with vector-to-vector distances of 2 $\mu$m with 32 pixel-square interrogation windows at 50$\%$ overlap.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2002년도 학술대회지
• /
• pp.423-426
• /
• 2002

A custom micro-PIV optics assembly has been used to measure the flow field inside a T-shaped microchannel. The micro-PIV system consists of microscope objectives of various magnifications, a dichroic cube, and an 8-bit CCD camera. Fluorescent particles of diameters 620nm have been used with a Nd:YAG laser and color filters. A programmable syringe pump with Teflon tubings were used to inject particle-seeded distilled water into the channel at flow rates of $420,\;40,\;60{\mu}L/hr$. The microchannels are fabricated with PDMS with a silicon mold, then $O_2-ion$ bonded onto a slide glass. Results show differences in flow characteristics and resolution according to fluid injection rates, and magnifications, respectively. The results show PIV results with vector-to-vector distances of $2{\mu}m$ with 32 pixel-square interrogation windows at $50{\%}$ overlap.

• 한국세라믹학회지
• /
• 제49권2호
• /
• pp.142-145
• /
• 2012

In order to investigate the surface SHG, (110) pure STO single crystals were exposed to a reducing atmosphere to induce the reduction of the Ti ion and the release of oxygen from the lattice compensating the reduction of the Ti ions. The anisotropy and asymmetry of SHG intensity explains a slight shrinkage. The incoming fundamental wave was polarized either in the $p$-in or $s$-in to the plane of incidence for the reflection geometry. The SH polarization diagram could be described by the electric dipole and/or quadrupole contribution of reduced STO single crystal surface.

• 한국광학회지
• /
• 제2권2호
• /
• pp.59-66
• /
• 1991

표면 플라즈몬 공명이 일어나는 공명각과 최적 두께를 여러 금속 박막에 대해 어드미턴스 다이어그램을 이용하여 계산하였으며, 표면 플라즈몬 공명에서 측정한 반사율과 이론치를 곡선 맞춤하여 은박막과 알루미늄 박막의 광학 상수와 두께를 결정하였다. 한 파장에 대해 두 개의 해가 존재하므로 알곤 레이저의 두 파장에서 같은 두께를 갖는 해를 광학 상수의 유일 해로 선택하였으며, 금속 박막을 공기 중에 노출시킬 경우, 박막의 표면 변화에 의해 이동된 표면 플라즈몬 공명으로부터 변화된 금속 박막의 광학 상수를 결정하였다.

• 한국재료학회지
• /
• 제17권5호
• /
• pp.256-262
• /
• 2007

Effects of interlayer and the combination of different coating methods on the mechanical and corrosion behaviors of TiN and CrN coated on 420 stainless steel have been studied. STS 420 specimen were tempered at $300^{\circ}C$ for 1 hr in vacuum furnace. The TiN and CrN thin film with 2 ${\mu}m$ thickness were coated by arc ion plating and DC magnetron sputtering following the formation of interlayer for pure titanium and chromium with 0.2 ${\mu}m$ thickness. The microstructure and surface analysis of the specimen were conducted by using SEM, XRD and roughness tester. Mechanical properties such as hardness and adhesion also were examined. XRD patterns of TiN thin films showed that preferred TiN (111) orientation was observed. The peaks of CrN (111) and $Cr_2N$ (300) were only observed in CrN thin films deposited by arc ion plating. Both TiN and CrN deposited by arc ion plating had the higher adhesion and hardness compared to those formed by magnetron sputtering. The specimen of TiN and CrN on which interlayer deposited by magnetron sputtering and thin film deposited by arc ion plating had the highest adhesion with 22.2 N and 19.2 N. respectively. TiN and CrN samples shown the most noble corrosion potentials when the interlayers were deposited by using magnetron sputtering and the metal nitrides were deposited by using arc ion plating. The most noble corrosion potentials of TiN and CrN were found to be approximately -170 and -70 mV， respectively.