• Proceedings of the Korean Society For Composite Materials Conference
• /
• 2003.10a
• /
• pp.46-49
• /
• 2003

Cu have been widely used as signal transmission materials for electrical electronic components owing to its high electrical conductivity. However, it's size have been limited to small ones due to its poor mechanical properties, Until now, strengthening of the copper at toy was obtained either by the solid solution and precipitation hardening by adding alloy elements or the work hardening by deformation process. Adding the at toy elements lead to reduction of electrical conductivity. In this aspect, if carbon nanofiber is used as reinforcement which have outstanding mechanical strength and electric conductivity, it is possible to develope Cu matrix nanocomposite having almost no loss of electric conductivity. It is expected to be innovative in electric conduct ing material market. The unidirectional alignment of carbon nanofiber is the most challenging task developing the copper matrix composites of high strength and electric conductivity In this study, the unidirectional alignment of carbon nanofibers which is used reinforced material are controlled by drawing process in order to manufacture the intermediary materials for the carbon nanofiber reinforced Cu matrix nanocomposite and align mechanism as well as optimized drawing process parameters are verified via experiments and numerical analysis. The materials used in this study were pure copper and the nanofibers of 150nm in diameter and of $10~20\mu\textrm{m}$ In length. The materials have been tested and the tensile strength was 75MPa with the elongation of 44% for the copper it is assumed that carbon nanofiber behave like porous elasto-plastic materials. Compaction test was conducted to obtain constitutive properties of carbon nanofiber. Optimal parameter for drawing process was obtained by experiments and numerical analysis considering the various drawing angles, reduction areas, friction coefficient, etc Lower reduction areas provides the less rupture of cu tube is not iced during the drawing process. Optimal die angle was between 5 degree and 12 degree. Relative density of carbon nanofiber embedded in the copper tube is higher as drawing diameter decrease and compressive residual stress is occurred in the copper tube. Carbon nanofibers are moved to the reverse drawing direct ion via shear force caused by deformation of the copper tube and alined to the drawing direction.

• Journal of the Korean Chemical Society
• /
• v.32 no.5
• /
• pp.443-451
• /
• 1988

New crown ether dye-Ⅰ and dye-Ⅱ having an azo group(-N=N-) were synthesized from monobenzo-15-crown-5 and dibenzo-18-crown-6. These dyes showed ${\lambda}_{max}$ of 377 and 383nm respectively. The complexes of alkali metal ions ($Na^+$, $K^+$, $Cs^+$) with dye ligands showed band shift (390~400nm) and intensity increased. For a given anion, the extraction constants are in the order of $K^+$ < $Cs^+$ < $Na^+$ for dye-Ⅰ and $Cs^+$ < $Na^+$ < $K^+$ for dye-Ⅱ. These results show that the selectivity of crown ethers toward the alkali metal ions is dependant on the charge density of cation and the size of crown ether cavity. For a given cation, the order of the extraction constant is $Cl^-$ < $Br^-$ < $I^-$ < picrate. This order coincides with the degree of anion solvation effect.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.3
• /
• pp.219-225
• /
• 2000

The spinel structured $LiMn_2O_4$was obtained by two consecutive heat treatment on xerogel; the first heat treatment was at $150^{\circ}C$ and the second at $350^{\circ}C$ was obtained by sol-gel process using an aqueous solution of lithium hydroxide and manganese acetate. The synthesized $LiMn_2O_4$ by the sol-gel process showed a discharge capacity of 88~56 mAh/g after 15 cycles in Li/lM $LiClO_4$(in PC)/$LiMn_2O_4$at a current density of 0.25 mA/$\textrm{cm}^2$ and the voltage ranged 3.5 V to 4.3 V. For the second heat treatment above $350^{\circ}C$, $Mn_2O_3$was formed as a by-product during the synthesis of $LiMn_2O_4$. The heat treatment at $500^{\circ}C$, for example, showed a lower discharge capacity 81~47 mAh/g, after the 15 charge/discharge cycles. The lower capacity was due to the increment of $Mn^{3+}$ ion and this phenomenon was in agreement with the Jahn-Teller distortion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.319-322
• /
• 2003

To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

• Journal of Surface Science and Engineering
• /
• v.41 no.6
• /
• pp.292-300
• /
• 2008

Dental implant system is composed of abutment, abutment screw and implant fixture connected with screw. The problems of loosening/tightening and stability of abutment screw depend on surface characteristics, like a surface roughness, coating materials and friction resistance and so on. For this reason, surface treatment of abutment screw has been remained research problem in prosthodontics. The purpose of this study was to investigate the stability of TiN and WC coated dental abutment screw, abutment screw was used, respectively, for experiment. For improving the surface characteristics, TiN and WC film coating was carried out on the abutment screw using EB-PVD and sputtering, respectively. In order to observe the coating surface of abutment screw, surfaces of specimens were characterized, using field emission scanning electron microscope(FE-SEM) and energy dispersive x-ray spectroscopy(EDS). The stability of TiN and WC coated abutment screw was evaluated by potentiodynamic, and cyclic potentiodynamic polarization method in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The corrosion potential of TiN coated specimen was higher than those of WC coated and non-coated abutment screw. Whereas, corrosion current density of TiN coated screws was lower than those of WC coated and non-coated abutment screw. The stability of screw decreased as following order; TiN coating, WC coating and non-coated screw. The pitting potentials of TiN and WC coated specimens were higher than that of non-coated abutment screw, but repassivation potential of WC coated specimen was lower than those of TiN coated and non-coated abutment screws due to breakdown of coated film. The degree of local ion dissolution on the surface increased in the order of TiN coated, non-coated and WC coated screws.

• Journal of Sensor Science and Technology
• /
• v.1 no.2
• /
• pp.173-181
• /
• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Journal of the Korean Vacuum Society
• /
• v.2 no.2
• /
• pp.188-198
• /
• 1993

We have developed a technique for growing thin oxides (6~10 nm) by the Last step TCA method. N-channel metal-oxide-semiconductor (n-MOS) capacitor and n-channel metal-oxide-semiconductor field-effect transistor's (MOSFET's) having a gate oxide with chlorine incorporated $SiO_2/Si$ interface have been analyzed by electrical measurements and physical methods, such as secondary ion mass spectrometry (SIMS) and electron spectroscopy for chemical analysis (ESCA). The gate oxide grown with the Last strp TCA method has good characteristics as follows: the electron mobility of the MOSFET's with the Last step TCA method was increased by about 7% and the defect density at the $SiO_2/Si$ interface decreases slightly compared with that with No TCA method. In reliability estimation, the breakdown field was 18 MV/cm, 0.6 MV/cm higher than that of the gate oxide with No TCA method, and the lifetime estimated by TDDB measurement was longer than 20 years. The device lifetime estimated from hot-carrier reliability was proven to be enhanced. As the results, the gate oxide having a $SiO_2/Si$ interface incorporated with chlorine has good characteristics. Our new technique of Last step TCA method may be used to improve the endurance and retention of MOSFET's and to alleviate the degradation of thin oxides in short-channel MOS devices.

• Applied Chemistry for Engineering
• /
• v.23 no.5
• /
• pp.474-479
• /
• 2012

Possibility of the selective removal of $Ca^{2+}$ ions from a mixed solution of $Na^{+}$ and $Ca^{2+}$ ions using membrane capacitive deionization (MCDI) was investigated. Adsorption equilibrium experiments were conducted to determine the selectivity of the CMX cation-exchange membrane toward $Ca^{2+}$ ions. In addition, desalination experiments for a mixed solution (5 meq/L NaCl + 2 meq/L $CaCl_{2}$) were performed using an MCDI cell. The adsorption equilibrium of CMX membrane showed that the equivalent fraction of $Ca^{2+}$ ions in the solution and the CMX membrane were 28.6 and 87.2%, respectively, which indicates the CMX membrane's high selectivity toward $Ca^{2+}$ ions. Desalination experiments were performed by applying a constant current to the MCDI cell until the cell potential reached 1.0 V. The amount of ions adsorbed did not significantly change as the applied current was changed. However, the equivalent fractions of $Ca^{2+}$ ions among the adsorbed ions were inversely proportional to the applied currents: 81.4, 78.4, 77.0, and 74.5% at 200, 300, 500, and $700\;A/m^{2}$ of applied current density, respectively. This result is attributed to the increased fraction of $Ca^{2+}$ ions adsorbed by the CMX membrane at lower applied current densities.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.134-134
• /
• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Applied Chemistry for Engineering
• /
• v.18 no.1
• /
• pp.24-28
• /
• 2007

The etching of zinc oxide (ZnO) thin films has been studied using a high density plasma in a $Cl_2/Ar$ gas. The etch characteristics of ZnO thin films were systematically investigated on varying $Cl_2$ concentration, coil rf power, dc-bias voltage, and gas pressure. With increasing $Cl_2$ concentration, the etch rate of ZnO thin film increased, the redeposition around the etched patterns decreased but the sidewall slope of the etched patterns slanted. As the coil rf power and dc-bias voltage increased, the etch rates of ZnO thin films increased and etch profiles of ZnO thin films were improved. With increasing gas pressure, the etch rate of ZnO thin films slightly increased but little change in etch profile was observed. Based on these results, the optimal etching conditions of ZnO thin film were selected. Finally, the etching of ZnO thin films with a high degree of anisotropy of approximately $75^{\circ}{\sim}80^{\circ}$ without the redepositions and residues was successfully achieved at the etching conditions of 20% $Cl_2$ concentration, coil rf power of 1000 W, dc-bias voltage of 400 V, and gas pressure of 5 mTorr.