• 대한방사선기술학회지:방사선기술과학
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• 제19권2호
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• pp.71-77
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• 1996

Studies were conducted to determine the clinical application of photodiode. We compared photodiode with ion-chamber as to change of tube potential, tube current, mAs and measured decreasing rate of penetration dose. When tube potential was changed from 60 kVp to 120 kVp, output of photodiode and ion-chamber were changed from 0.4 to 1.625, and 1.018 to 4.268, respectively. This was a good agreement to theory that $I=Kv^2it$(I is intensity, K is constant, v is tube potential, i is tube current, t is time). Characteristics for change of tube current and mAs were also a good agreement to theory. And comparison in decreasing rate of penetration dose was similar except above 6 cm in depth. Our results indicated that photodiode was a good instrument for relative measurement of radiation exposure, but we can not use the photodiode for absolute radiation dose.

• 한국진공학회지
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• 제8권4B호
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• pp.541-547
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• 1999

Reactive ion etching process for InP using BCl3/O2/Ar high density inductively coupled plasma was investigated. The experimental design method proposed by the Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power and the chamber pressure were the two dominant parameters affectsing etch results. It was also observed that the etch rate decreased and the surface roughness improved as the ICP power and the bias voltage increased and as the chamber pressure decreased. The Addition of oxygen to the gas mixture drastically improved surface roughness by suppressing the formation of the surface reaction product. The optimum condition was ICP power 600W, bias voltage -100V, 10% $O_2$, 6mTorr, and $180^{\circ}C$, resulting in about 0.15$\mu\textrm{m}$ etch rate with smooth surfaces and vertical mesa sidewalls Also, the maximum etch rate of abut 4.5 $\mu\textrm{m}$/min was obtained at the condition of ICP power 800W, bias voltage -150V, 15% $O_2$, 8mTorr and $160^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• 제6권6호
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• pp.262-271
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• 2005

In order to achieve timely and accurate fault detection of plasma etching process, neural network based time series modeling has been applied to reactive ion etching (RIE) using two different in-situ plasma-monitoring sensors called optical emission spectroscopy (OES) and residual gas analyzer (RGA). Four different subsystems of RIE (such as RF power, chamber pressure, and two gas flows) were considered as potential sources of fault, and multiple degrees of faults were tested. OES and RGA data were simultaneously collected while the etching of benzocyclobutene (BCB) in a $SF_6/O_2$ plasma was taking place. To simulate established TSNNs as incipient fault detectors, each TSNN was trained to learn the parameters at t, t+T, ... , and t+4T. This prediction scheme could effectively compensate run-time-delay (RTD) caused by data preprocessing and computation. Satisfying results are presented in this paper, and it turned out that OES is more sensitive to RF power and RGA is to chamber pressure and gas flows. Therefore, the combination of these two sensors is recommended for better fault detection, and they show a potential to the applications of not only incipient fault detection but also incipient real-time diagnosis.

• 한국의학물리학회지:의학물리
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• 제31권4호
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• pp.153-162
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• 2020

Purpose: We aim to evaluate the accuracy and effectiveness of an automatically converted radiation therapy plan between Radixact machines by comparing the original plan with the transferred plan. Methods: The study involved a total of 20 patients for each randomly selected treatment site who received radiation treatment with Radixact. We set up the cheese phantom (Gammex RMI, Middleton, WI, USA) with an Exradin A1SL ion chamber (Standard Imaging, Madison, WI, USA) and GAFCHROMIC EBT3 film (International Specialty Products, Wayne, NJ, USA) inserted. We used three methods to evaluate an automatically converted radiation therapy plan using the features of the Plan transfer. First, we evaluated and compared Planning target volume (PTV) coverage (homogeneity index, HI; conformity index, CI) and organs at risk (OAR) dose statistics. Second, we compared the absolute dose using an ion chamber. Lastly, we analyzed gamma passing rates using film. Results: Our results showed that the difference in PTV coverage was 1.72% in HI and 0.17% in CI, and majority of the difference in OAR was within 1% across all sites. The difference (%) in absolute dose values was averaging 0.74%. In addition, the gamma passing rate was 99.64% for 3%/3 mm and 97.08% for 2%/2 mm. Conclusions: The Plan transfer function can be reliably used in appropriate situations.

• Applied Microscopy
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• 제50권
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• pp.24.1-24.11
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• 2020

The development of the femtosecond laser (fs laser) with its ability to provide extremely rapid athermal ablation of materials has initiated a renaissance in materials science. Sample milling rates for the fs laser are orders of magnitude greater than that of traditional focused ion beam (FIB) sources currently used. In combination with minimal surface post-processing requirements, this technology is proving to be a game changer for materials research. The development of a femtosecond laser attached to a focused ion beam scanning electron microscope (LaserFIB) enables numerous new capabilities, including access to deeply buried structures as well as the production of extremely large trenches, cross sections, pillars and TEM H-bars, all while preserving microstructure and avoiding or reducing FIB polishing. Several high impact applications are now possible due to this technology in the fields of crystallography, electronics, mechanical engineering, battery research and materials sample preparation. This review article summarizes the current opportunities for this new technology focusing on the materials science megatrends of engineering materials, energy materials and electronics.

• 한국진공학회지
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• 제2권3호
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• pp.304-313
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• 1993

집속 이온빔 기술은 고해상도의 이온빔 리토그라피, 마스크가 필요없는 이온주입, 그리고 Ion beam induced deposition 등 반도체 소자의 미세가공에 널리 이용되어 왔다. 좋은 안정도와 높은 전류밀도, 적은 에너지 퍼짐 그리고 낮은 에미턴스와 높은 선명도를 갖는 집속 이온빔 장비를 위한 액체 갈륨 이온원이 한국에서 개발 시업되었다. 이온빔의 전압이 15kV, 렌즈전압이 7kV 그리고 렌즈상단에 위치한 aperture의 직경이 0.2mm일 때, 0.1$mu extrm{m}$의 빔 직경으로 집속되는 정전 einzel렌즈가 설계 조립되었고, FIB 진공 chamber는 렌즈부와의 차 등 진공시스템으로 구성되어 설계제작되었다. FIB 장비가 조만간 한국에서 이온빔 밀링, ion beam induced deposition 그리고 잘못된 부분의 수정 등 반도체 제작공정에서의 응용에 큰 기여를 할 것이라 기대된다.

• 한국자동차공학회논문집
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• 제8권6호
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• pp.1-8
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• 2000

A new method of knock detection in SI engines, using a change of ion concentration in the combustion chamber, was developed. In order to measure in-cylinder ionization current, ionization probes were installed at spark plug and cylinder head of production engine. It was found that the electric current generated by ionized gas in core burned gas region of knocking cycle is between 2 and 10 times larger than that of normal cycle, because the burned gas temperature which is the dominant parameter of a change of ion concentration increases. However, a change of ionization current in boundary region of burned gas is relatively weak. Hence a change of ion concentration in core burned gas region can be used for knock detection.

• Transactions on Electrical and Electronic Materials
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• 제11권6호
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• pp.266-270
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• 2010

The effect of an Ar plasma treatment on polycarbonate substrates was investigated using $TiO_2$ coatings produced by reactive ion-beam assisted sputtering. The typical pressure used during sputtering was about $10^{-4}$ Torr. After the Ar plasma treatment, the contact angle of a water droplet was reduced from $88^{\circ}$ to $52^{\circ}$ and then further decreased to $12^{\circ}$ with the addition of oxygen into the chamber. The surface of the polycarbonate substrate hanged from hydrophobic to hydrophilic with these treatments and revealed its changing nano-scale roughness. The $TiO_2$ films on the treated surface showed various colors and periodic ordering dependant on the film thickness due to optical interference.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.994-1000
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• 2001

In this paper, using micro-stereolithography technology, I fabricated a liquid analyzer to measure ion concentration of a solution. Micro-stereolithography is a technology to fabricate 3-dimensional structure by applying laser beam on liquid photo-polymer. This technology makes it possible to do preassemble fabrication without any extra assembling step after the process. So, the liquid analyzer could be fabricated at very low cost with very simple process by micro-stereolithography technology. The liquid analyzer consists of a chamber for containing the solution, a pump using piezoelectric effect of PZT disk, a static mixer and a sensor for measuring ion concentration using Pt electrodes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.140-143
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• 2006

차세대 반도체 공정을 위한 많은 노력 중 미세가공의 중요성이 날로 증가함에 따라 reactive ion etching (RIE)에 대한 연구 또한 그 중요성이 커지고 있으며, 현재 제조공정 라인에서는 공정상의 오류를 줄이는 노력에 주목하고 있다. 본 논문에서는 RIE 과정에서 etch rate과 uniformity에 영향을 줄 수 있는 요인 4 가지 즉, $CHF_3$, $O_2$ chamber pressure, RF power의 변화에 대해 실험 계획법 (DOE)을 통해 실험을 계획하고, 실험한 후 neural networks. 를 통해 학습함으로서 RIE 공정상의 최적화률 모색하였다.