• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.380-386
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• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.

• Journal of radiological science and technology
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• v.39 no.4
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• pp.643-649
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• 2016

When a cyclotron produces $^{18}F^-$, accelerated protons interact with metal parts of the cyclotron machine and induces radioactivity. Especially, the target window and chamber of the target assembly are the main parts where long-lived radionuclides are generated as they are incident by direct beams. It is of great importance to identify radionuclides induced in the target assembly for the safe operation and maintenance of a cyclotron facility. In this study, we analyzed major radionuclides generated in the target assembly by an operation of the Cyclotron 18/9 machine and measured dose rates after the operation to establish the radiation safety guideline for operators and maintenance personnel of the machine. Gamma spectroscopy with HPGe was performed on samples from the target chamber and Havar foil target window to identify the radionuclides generated during the operation for production of $^{18}F^-$- isotope and their specific activity. Also, the dose rates from the target were measured as a function of time after an operation. These data will help improve radiological safety of operating the cyclotron facilities.

• Radiation Oncology Journal
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• v.20 no.4
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• pp.391-395
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• 2002

Purpose : To confirm the accuracy of the radiation dose at the isocenter by the standard linear accelerator-based stereotactic radiosurgery technique which was developed at Seoul National University Hospital. Materials and Methods : Radiation dosimetry was undertaken during standard 5-arc radiosurgery using 6 MV X-ray beam from CL2100C linac. The treatment head was attached with circular tertiary collimators of 10 and 20 mm diameter. We measured the absorbed dose at the isocenter of a multi-purpose phantom using two kinds of detector : a 0.125 co ionization chamber and a silicon diode detector. Results : The dose differences at each arc plane between the planned dose and the measured dose at the isocenter raged from $-0.73\%\;to\;-2.69\%$ with the 0.125 cc ion chamber, and from $-1.29\%\;to\;-2.91\%$ with the diode detector during radiosurgery with the tertiary collimator of 20 mm diameter. Those with the 10-mm tertiary collimator ranged from $-2.39\%\;to\;-4.25\%$ with the diode. Conclusion : The dose accuracy at the isocenter was ${\pm}3\%$. Therefore, further efforts such ws modification in processing of the archived image through DICOM3.0 format are required to lessen the dose difference.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.408-418
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• 2008

The rectangular resonant cavity was designed and characterized as a microwave plasma source for focused ion beam. The optimum cavity was calculated analytically and analyzed in detail by using HFSS(High Frequency Structure Simulator). Since the resonant cavity can be affected by the permittivity of quartz chamber and plasma, the cavity is designed to be changeable in one direction. By observing the microwave input power at which the breakdown begins, the optimum cavity length for breakdown is measured and compared with the calculated one, showing in good agreement with the optimum length reduced by 10cm according to the permittivity change in the presence of quartz chamber. The shape of breakdown power curve as a function of pressure appears to be similar to Paschen-curve. After breakdown, plasma densities increase with microwave power and the reduced effective permittivity in the cavity with plasma results in larger optimum length. However, it is not possible to optimize the cavity condition for high density plasmas with increased input power, because too high input power causes expansion of density cutoff region where microwave cannot penetrate. For more accurate microwave cavity design to generate high density plasma, plasma column inside and outside the density cutoff region needs to be treated as a conductor or dielectric.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.8-13
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• 2001

Cerium oxide ($CeO_2$) thin film has been proposed as a buffer layer between the ferroelectric thin film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS) structures for ferroelectric random access memory (FRAM) applications. In this study, $CeO_2$ thin films were etched with $Cl_2$/Ar gas mixture in an inductively coupled plasma (ICP). Etch properties were measured for different gas mixing ratio of $Cl_2$($Cl_2$+Ar) while the other process conditions were fixed at RF power (600 W), dc bias voltage (-200 V), and chamber pressure (15 mTorr). The highest etch rate of $CeO_2$ thin film was 230 ${\AA}$/min and the selectivity of $CeO_2$ to $YMnO_3$ was 1.83 at $Cl_2$($Cl_2$+Ar gas mixing ratio of 0.2. The surface reaction of the etched $CeO_2$ thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is a Ce-Cl bonding by chemical reaction between Ce and Cl. The results of secondary ion mass spectrometer (SIMS) analysis were compared with the results of XPS analysis and the Ce-Cl bonding was monitored at 176.15 (a.m.u). These results confirm that Ce atoms of $CeO_2$ thin films react with chlorine and a compound such as CeCl remains on the surface of etched $CeO_2$ thin films. These products can be removed by Ar ion bombardment.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.186-196
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• 2009

Since it is difficult to extract a high flux ion beam directly at an energy of hyperthermal range ($1{\sim}100\;eV$), especially, lower than 50 eV, the ions should be neutralized into neutral particles and extracted as a neutral beam. A plasma source required to generate and efficiently transport high flux hyperthermal neutral beams should be easily scaled up and produce a high ion density (${\ge}10^{11}\;cm^{-3}$) even at a low working pressure (${\le}$ 0.3 mTorr). It is suggested that the required plasma source can be realized by Electron Cyclotron Resonance (ECR) plasmas with diverse magnetic field configurations of permanent magnets such as a planar ECR plasma source with magnetron field configuration and cylindrical one with axial magnetic fields produced by permanent magnet arrays around chamber wall. In both case of the ECR sources, the electron confinement is based on the simple mirror field structure and efficiently enhanced by electron drifts for producing the high density plasma even at the low pressure.

• Korean Journal of Materials Research
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• v.17 no.12
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• pp.642-647
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• 2007

We investigated dry etching of acrylic (PMMA) in $O_2/N_2$ plasmas using a multi-layers electrode reactive ion etching (RIE) system. The multi-layers electrode RIE system had an electrode (or a chuck) consisted of 4 individual layers in a series. The diameter of the electrodes was 150 mm. The etch process parameters we studied were both applied RIE chuck power on the electrodes and % $O_2$ composition in the $N_2/O_2$ plasma mixtures. In details, the RIE chuck power was changed from 75 to 200 W.% $O_2$ in the plasmas was varied from 0 to 100% at the fixed total gas flow rates of 20 sccm. The etch results of acrylic in the multilayers electrode RIE system were characterized in terms of negatively induced dc bias on the electrode, etch rates and RMS surface roughness. Etch rate of acrylic was increased more than twice from about $0.2{\mu}m/min$ to over $0.4{\mu}m/min$ when RIE chuck power was changed from 75 to 200 W. 1 sigma uniformity of etch rate variation of acrylic on the 4 layers electrode was slightly increased from 2.3 to 3.2% when RIE chuck power was changed from 75 to 200 W at the fixed etch condition of 16 sccm $O_2/4\;sccm\;N_2$ gas flow and 100 mTorr chamber pressure. Surface morphology was also investigated using both a surface profilometry and scanning electron microscopy (SEM). The RMS roughness of etched acrylic surface was strongly affected by % $O_2$ composition in the $O_2/N_2$ plasmas. However, RIE chuck power changes hardly affected the roughness results in the range of 75-200 W. During etching experiment, Optical Emission Spectroscopy (OES) data was taken and we found both $N_2$ peak (354.27 nm) and $O_2$ peak (777.54 nm). The preliminarily overall results showed that the multi-layers electrode concept could be successfully utilized for high volume reactive ion etching of acrylic in the future.

• Progress in Medical Physics
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• v.8 no.2
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• pp.45-57
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• 1997

It is mandatory to measure accurately the dose distribution and the total absorbed dose of fast neutron for putting it to the clinical use. At present the methods of measurement of fast neutron are proposed largely by American Associations of Physicists in Medicine, European Clinical Neutron Dosimetry Group, and International Commission on Radiation Units and Measurements. The complexity of measurement, however, induces the methodological differences between them. In our study, therefore, we tried to establish a unique technique of measurement by means of measuring the emitted doses and the dose distribution of fast neutron beam from neutron therapy machine, and to invent a standard method of measurement adequate to our situation. For measuring the absorbed doses and the dose distribution of fast neutron beam, we used IC-17 and IC-18 ion chambers manufactured by A-150 plastic(tissue-equivalent material), IC-17M ion chamber manufactured by magnesium, TE gas and Ar gas, and RDM 2A electrometer. The magnitude of gamma-contamination intermingled with fast neutron beam was about 13％ at 5cm depth of standard irradiated field, and increased as the depth was increased. At the central axis the maximum dose depth and 50％ dose depth were 1.32cm and 14.8cm, respectively. The surface dose rate was 41.6-54.1％ throughout the entire irradiated fields and increased as the irradiated fields were increased. Beam profile was that the horn effect of about 7.5％ appeared at 2.5cm depth and the flattest at 10cm depth.

• Journal of Plant Biotechnology
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• v.35 no.1
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• pp.55-61
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• 2008

Previous studies on genetic transformation of chrysanthemum using cold regulated gene (BN115) have been conducted and the PCR and Real-Time PCR based method to determine the presence of the transferred cold regulated gene in the chrysanthemum was established. To check whether over-expression of BN115 gene in transgenic chrysanthemum will enhance their tolerance to cold stress, the transgenic chrysanthemum were grown under low temperature condition and several cold signalling including growth characteristics, stoma size and shape, SPAD value and ion leakage test were investigated. The transgenic chrysanthemum in the low temperature growth chamber grow much faster in term of the height, number and size of the leaves than those of wild-type plants and damage of transgenic plant caused by the low temperature was much less than that of wild-type plants. The stoma type and size of transgenic plant leaves grown at $5^{\circ}C$ were much similar to of wild-type plant cultured on $25^{\circ}C$ It has been found that SPAD value of transgenic plants was much higher than those of wild-type, but the EC density being lower under low temperature condition.

• Clean Technology
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• v.16 no.3
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• pp.191-197
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• 2010

Repair reaction of plasma damaged porous methyl doped SiOCH films was carried out with silylation agents dissolved in supercritical carbon dioxide ($scCO_2$) at various reaction time, pressure, and temperature. While a decrease in the characteristic bands at $3150{\sim}3560cm^{-1}$ was detectable, the difference of methyl peaks was not identified apparently in the FT-IR spectra. The surface hydrophobicity was rapidly recovered by the silylation. In order to induce effective repair in bulk phase, the wafer was heat treated before reaction under vacuum or ambient condition. The contact angle was slightly increased after the treatment and completely recovered after the subsequent silylation. Methyl groups were decreased after the plasma damage, but their recovery was not identified apparently from the FT-IR, spectroscopic ellipsometry, and secondary ion mass spectroscopy analyses. Furthermore, Ti evaporator was performed in a vacuum chamber to evaluate the pore sealing effect. The GDS analysis revealed that the open pores in the plasma damaged films were efficiently sealed with the silylation in $scCO_2$.