• 한국분무공학회지
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• 제3권1호
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• pp.19-26
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• 1998

The effect of mixture component makes a nelay time and a long total combustion period $\tau_{p\;max}$. The flame propagation delay $\tau_{df}$ was determined by the record of current ion. The pressure release delay $\tau_{dp}$ and $\tau_{p\;max}$ were determined by the indicated pressure diagram in constant volume of the combustion chamber. The results are as follows: 1) The ignition delay $\tau_t$ time takes the minimum value around $\Phi=1.15$. 2) $\tau_{df}$ and $\tau_t$ time increased according to the increases of the concentrated dilution gases, because the adiabatic flame temperature decreased due to the increases of the heat capacity. But dilution gases have little effect on flame nucleus formation delay 3) The relation between $\tau_t$ time and reciprocal laminar burning velocity is almost linear. 4) The increase of the propagation length is accompanied with increased ratio of the $\tau_{df},\;\tau_{dp},\;\tau_{t},\;\tau_{p\;max}$.

• Journal of Magnetics
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• 제6권3호
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• pp.90-93
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• 2001

Co/$Al_O_3$/NiFe and CO/$Al_O_3$/Co tunnel junctions were fabricated by a radio frequency magnetron sputtering at room temperature with hard mask on glass and $4^{\circ}$ tilt cut Si (111) substrates. The barrier layer was formed through two steps. After the Al layer was deposited, it was oxidized in the chamber of a reactive ion etching system (RIE) with $O_2$plasma at various conditions. The dependence of the TMR value and junction resistance on the thickness of Al layer (before oxidation) and oxidation parameters were investigated. Magnetoresistance value of 7% at room temperature was obtained by optimizing the Al layer thickness and oxidation conditions. Circular shape junctions on $4^{\circ}$tilt cut Si (111) substrate showed 4% magnetoresistance. Photovoltaic energy conversion effect was observed with the cross-strip geometry junctions on Si substrate.

• 한국세라믹학회지
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• 제49권6호
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• pp.556-560
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• 2012

Nanocrystalline CrN coatings were deposited by DC and ICP-assisted magnetron sputtering on Si (100) substrates. The influences of the ICP power on the microstructural and crystallographic properties of the coatings were investigated. For the generation of the ICP, radio frequency was applied using a dielectric-encapsulated coil antenna installed inside the deposition chamber. As the ICP power increased from 0 to 500W, the crystalline grain size decreased. It is believed that the decrease in the crystal grain size at higher ICP powers is due to resputtering of the coatings as a result of ion bombardment as well as film densification. The preferential orientation of CrN coatings changed from (111) to (200) with an increase in the ICP power. The ICP magnetron sputtering CrN coatings showed excellent surface roughness compared to the DC magnetron sputtering coatings.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.278-280
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• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 Phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820$^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0x10$\^$-6/ and 2.3x10$\^$-5/ Torr. Bi 2212 Phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$\sub$c/(onset) of about 70 K and T$\sub$c/(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$ was observed in all of the obtained films.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.564-568
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• 2003

The etching of Au thin films have been performed in an inductively coupled CF$_4$/Cl$_2$/Ar plasma. The etch rates were measured as CF$_4$ contents added from 0 to 30 % to Cl$_2$/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. The highest etch rate of the Au thin film was 3700 $\AA$m/min at a 10% additive CF$_4$ into Cl$_2$/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.

• 대한디지털의료영상학회논문지
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• 제13권4호
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• pp.145-151
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• 2011

The purpose of this study is to know some changes of resolution and image if we remove scattered ray using lead plate when doing lumbar lateral projection. Using 3 DR system(2 FD types, 1 CCD type) equipments and 2 film system equipments, we gain the image whether the phantom of abdomen equivalent sticking resolution chart has lead plate or not, whether we do collimation or not. Also, we use ion chamber, measure radiation exposure rate and change to entrance surface dose from it. we gain that images in the greatest condition of taking in clinic. 5 people in this group decoded resolution with our eyes, measured thickness of images and compared them from each equiments. Resolution has difference to size of collimation in DR FD type. Also there is no difference the original image with the new image which we abbreviated mAs. In DR CCD type, resolution didn't have difference whether lead plate is or not and whether we do collimation or not. In film type, existing or nonexisting of lead plate didn't influence on resolution. Lead plate makes the quality of image higher due to reducing scattered ray, it doesn't influence on resolution.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.345-345
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• 2007

본 연구는 x선 영상검출기 적용을 위한 $HgI_2$ 필름의 누설전류 특성 향상을 위한 연구로서, $HgI_2$기반의 다양한 물질을 이용하여 다층구조 방식으로 제작된 필름의 누설전류 특성평가 및 제작된 다층구조의 상부전극물질의 변화에 따른 누설전류 특성을 평가하였다. $HgI_2$기반 다층구조의 제작 물질은 Parylene, $PbI_2$, a-Se을 사용하여 시편(parylene/ITO, ITO/$HgI_2/PbI_2$/ITO, ITO/$HgI_2$/a-Se/ITO)을 제작하였으며, 필름 제작공정은 Screen print, PVD공정으로 다층구조 필름을 제작하였다. 또 한, 다층구조로 제작된 필름에 상부 전극물질은 Au, In, ITO를 사용하여 누설전류의 특성을 평가하였다. 측정 장치로 DC Power Supply(556H. EG&G : 50~200V), X 선 발생장치(Toshiba KXO-50N), 차폐체 (Al 및 Cu), Oscilloscope (LeCroy, LC334AM, USA), Electrometer (Keithley, 6517), Ion chamber 2060 (Radical Co.)을 이용하여, 제작된 $HgI_2$기반 다층구조 sample의 누설전류 특성을 실험하였다. 이 결과로 다층구조에 제작된 물질 및 상부전극에 따른 누설전류의 특성을 평가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.109-110
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• 2007

Plasma etching process에서 magnetic field 영향에 관한 연구이다. High level dry etch process를 위해서는 high density plasma(HDP)가 요구된다. HDP를 위해서 MERIE(Magnetical enhancement reactive ion etcher) type의 설비가 사용되며 process chamber side에 4개의 magnetic coil을 사용한다. 이런 magnetic factor가 특히 wafer edge부문에 plasma charging에 의한 damage를 유발시키고 이로 인해 device Vth(Threshold voltage)가 shift 되면서 제품의 program 동작 문제의 원인이 되는 것을 발견하였다. 이번 연구에서 magnetic field와 관련된 plasma charge damage를 확인하고 damage free한 공정조건을 확보하게 되었다.

• 대한기계학회논문집
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• 제11권2호
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• pp.271-278
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• 1987

본 논문에서는 공기밸브형 진동연소기에 관한 이해를 더 증진시키기 위해서 기본적인 공기밸브형 진동연소기를 제작해서 압력진동 및 발생되는 소음특성, 작동주 파수, 그리고 연소특성에 관해 실험적 고찰을 행했다.

• 한국표면공학회지
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• 제31권3호
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• pp.142-150
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• 1998

Stainless steel is being used widely for various purposes due to its good corrosion resistance. There has been much research to produce colored stainless steel by several methods such as anodizing and ion plating. In this experiment, we coated TiN(C,O,H)films SUS304 substraate with the DC magnetron spttering system made by Leybold Heraeus and studied the interlater structure and abhesive strength of the films as a function of additional gases, acetylene, hydrogen and oxygen. When the acetylene gas was added into the chamber, the specimen with the interlayer phase had good adhesion due to the toughness of the $\gamma'-Fe_4N$ plase induced from a solid solution of carbon atoms, while low adhesion appeared on the specimen of the non interlayer phase. The formation of the interlayer phase($\gamma'-Fe_4N$) was due to hydrogen embrittlement and internal stress induced by $\gamma'-Fe_4N$ formation in the interlayer. We could fine the interlayer phase ($\gamma'-Fe_4N$) at the interface between the film and the substrate of the TEM image when $\gamma'-Fe_4N$ was detected by the X-ray duffraction metheod.