• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.425.2-425.2
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• 2014

$TiO_2$ possesses great photocatalytic properties but absorbs only UV light owing to high band gap energy (Eg = 3.2 eV). By narrowing the band gap through doping a metal ion, the photocatalytic activity can be enhanced in condition of the light of a higher than 365 nm wavelength. Main purpose for this study is to evaluate the activities of metal doped $TiO_2$ for degrading the volatile organic compounds (VOCs); p-xylene is chosen in the VOC removal test. Vanadium is selected in this study because an ionic radius of vanadium is almost the same as titanium ion and vanadium can be easily doped into $TiO_2$. V-doped $TiO_2$ was synthesized by sol-gel methods and compared with pure $TiO_2$. Pure TiO2 powder and V-doped $TiO_2$ powder were coated on glasses by spray coating method. UV-Visible spectrophotometer was used for the measurement of the band gap changes. VOC concentration degradation level was tested with using various UV light sources in an enclosed chamber. Catalytic activities of prepared samples were evaluated based on the experimental results and compared with coated pure $TiO_2$ sample.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.6-12
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• 2000

In this study, molybdenum thin films were etched with Cl\ulcorner/(Cl\ulcorner+SF\ulcorner) gas mixing ratio in an magneti-cally enhanced reactive ion etching(MERIE) by the etching parameters such as rf power of 250 watts, chamber pressure of 100 mTorr and B-field of 30 gauss. The etch rate was 150nm/min under Cl\ulcorner/(Cl\ulcorner+SF\ulcorner) gas mixing ratio of 0.25. At this time, the selectivity of Mo to SiO\ulcorner, photoresist were respectively 0.94, 0.05. The surface reaction of the etched Mo thin films was investigated with X-ray photoelectron spectroscopy(XPS). It was analyzed that Mo peaks was mainly observed in Mo-O bonds formed MoO\ulcorner compounds and F was detected in Mo-F and O-F bonds. Cl peaks were detected by the peak of Cl 2p\ulcorner in Cl-Mo bonds of MoCl\ulcorner or MoO\ulcornerCl\ulcorner formulas. Almost all of both Cl and S atoms had been com-bined with Mo, respectively.

• Particle and aerosol research
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• v.5 no.3
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• pp.123-131
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• 2009

This paper presents simulation results of particle transport in low-pressure, low-temperature plasma environment. The size dependent transport of particles in the plasma is investigated with a two-dimensional simulation tool developed in-house for plasma chamber analysis and design. The plasma model consists of the first two and three moments of the Boltzmann equation for ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The particle transport model takes into account all important factors, such as gravitational, electrostatic, ion drag, neutral drag and Brownian forces, affecting the motion of particles in the plasma environment. The particle transport model coupled with both neutral fluid and plasma models is simulated through a Lagrangian approach tracking the individual trajectory of each particle by taking a force balance on the particle. The size dependant trap locations of particles ranging from a few nm to a few ${\mu}m$ are identified in both electropositive and electronegative plasmas. The simulation results show that particles are trapped at locations where the forces acting on them balance. While fine particles tend to be trapped in the bulk, large particles accumulate near bottom sheath boundaries and around material interfaces, such as wafer and electrode edges where a sudden change in electric field occurs. Overall, small particles form a "dome" shape around the center of the plasma reactor and are also trapped in a "ring" near the radial sheath boundaries, while larger particles accumulate only in the "ring". These simulation results are qualitatively in good agreement with experimental observation.

• Journal of Radiation Protection and Research
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• v.16 no.2
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• pp.17-26
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• 1991

Beta ray $(^{90}Sr+^{90}Y)$ absorbed dose at tissue surface was measured from the distance of 30cm by use of extrapolation chamber. In the measurement, following factors were considered: effective area of collecting electrode, polarity effect, ion recombination and window attenuation. The measured absorbed dose rate at tissue surface was $1.493{\mu}Gy/sec$ with ${\pm}2.9%$.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.47 no.2
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• pp.108-115
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• 2002

The effects of long-term fertilization on soil properties and nutrient availability are not well documented for cassava cultivation in Vietnam. In 1990, a field research plots were established with 12 treatments to test the effect of different rates of nitrogen (N), phosphorus (P) and potassium (K) on soil properties in Acrisols at Thai Nguyen University in Northern Vietnam. In 1999, composite soil samples (0 to 20cm depth) were collected from eight selected plots for measurements of nutrient supply rates by ion exchange membrane probes and for growing corn and canola in a growth chamber with and without added lime. Generally, long-term nitrogen (N) fertilization increased available N supply rates but decreased available potassium (K) and magnesium (Mg). Long-term phosphorus(P) applications increased canola N, calcium (Ca) and Mg uptake. Canola P uptake increased with increased P rates only when lime was added. Long-term K applications increased canola N, K, Ca, Mg uptake but only significantly increased corn N uptake. Liming significantly increased uptake of N, P, K, Ca, Mg and S for both corn and canola. However, N $H_{4-}$N, K and Mg soil supply rates were reduced when lime was added, due to competition between Ca from the added lime and other nutrients.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.8
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• pp.1376-1382
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• 2016

The discharge characteristics of inductively coupled $Ar/CH_4$ plasma were investigated by fluid simulation. The inductively coupled plasma source driven by 13.56 Mhz was prepared. Properties of $Ar/CH_4$ plasma source are investigated by fluid simulation including Navier-Stokes equations. The schematics diagram of inductively coupled plasma was designed as the two dimensional axial symmetry structure. Sixty six kinds of chemical reactions were used in plasma simulation. And the Lennard Jones parameter and the ion mobility for each ion were used in the calculations. Velocity magnitude, dynamic viscosity and kinetic viscosity were investigated by using the fluid equations. $Ar/CH_4$ plasma simulation results showed that the number of hydrocarbon radical is lowest at the vicinity of gas feeding line due to high flow velocity. When the input power density was supplied as $0.07W/cm^3$, CH radical density qualitatively follows the electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.24-24
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• 1998

반도체장비를 포함하는 초고진공장비의 園훌化가 급속히 그리고 절실히 요구되고 있는 것이 현실정이다. 當面해서 실현할 국산진공장비의 대상은 廣範圍하다. 즉, 각종 진공 pump ( (rotary, dry, diffusion, cryo, ion, turbo melecular pump), 진공 chamber, 진공 line, gate valve 를 위 시 한 진공 V머ve, flange, gasket, fl않d야lU, mainpulater 퉁 진공 部品이 다. 진공계 의 핵심 은 適切하고 優良한 진공재료의 선태파 사용이다. 진공장비는 사용자가 원하는 진공도를 원하 는 시간 동안 륨空度를 유지해 주어야 한다. 진공재료 선태의 기준사항은:(1) 기체의 透過성 (2) 薰했훌 (3) 혔體放出특성 - -outgassing과 degassing- (4) 機械的 량훌度 (5) 온도 의존성 (6) 化學톡성 (7) 加I성 및 鎔接 성 (8) 課電특성 (9) 磁氣특성 (10) 高速함子 및 放射線 특성 (11) 經濟성 및 調達생 둥이 다. 우량한 초고진공계재료는 풍부하게 개발되어 왔고, 또 新材料들이 개발되고 있다. 여기에서는 주로 초고진공 내지는 극고진공계의 構造材料, 機能材料, 部品材料 일반파 몇가지 신재료의 특 성에 관해서 記述한다. M Mild SteeHSAE, 1112, 1010, 1020, 1022, etc)., S Stainless SteeHAlSI, 304, 304L, 310, 316, 321, 347): 구조재료, chamber, fl하1ges A Aluminum과 Alloys (1060, 1100, 2014, 4032, 6(뻐1): 구조재료, chamber, flanges, gaskets A AI, Al 떠loy는 SS에 代替하는 역 할올 시 작하고 있다. C Copper, Copper Alloys(C11$\alpha$)0, C26800, C61400, Cl7200): 내장인자, gasket, cryopanel, tubing T Titanium, Ziriconium, Haf띠um 및 Alloys: 특히 Ti은 10n pump 용 getter material 이 외 에 U UHV,XHV용 chamber계로서 관심올 끌고 있다. N Nickel, Nickel Alloys (200, 204, 211, monel, nichrome): 부식 방지 , 전자장치 , 자기 장치 귀 금속(Ag, Au, Pt, Pd, Rh, Ir, Os, Ru): 보조부품, gasket, filament, coating, thermocouple, 접 합부위 T TiC, SiC, zrC, HfC, TaC 둥의 탄화물과, BN, TiN, AlN 동의 질화물, 붕화물이 둥장하고 었 다. 유리: Soda Lime, Borosilicate, Potash Soda Lead: View Port, Chamber envelope C Ceramics: AlZ03, BeO, MgO, zrOz, SiOz, MgOzSiOz, 3Alz032SiOz, Z$textsc{k}$hSiOz S상N4: e electrical, thermal insulators, crucibles, boats, single crystals, sepctr려 windows 저자는 최근 저자들이 발견한 Zr-Ti-Cu-Ni-Be amorphous alloys coated cham뾰r가 radiation p proof로 이용될 수 있는 사실을 점검하고 었다 .. Z.Y. Hua 들은 Cs3Sb를 새로운 photocathode 재료로 보고하고 있다.

• Journal of Korean Society on Water Environment
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• v.24 no.6
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• pp.718-724
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• 2008

The ion selective microelectrode (ISME) has been used for measuring the ion profile of DO, $NH_4{^+}-N$, $NO_2{^-}-N$ and $NO_3{^-}-N$ in biofilm. In this study we evaluated the detection limit and validity of ISME and applied ISME for the continuous measurement of $NH_4{^+}-N$ and $NO_3{^-}-N$ concentration in the modified Ludzack-Ettinger (MLE) process. Average detection limits of $NH_4{^+}-N$ and $NO_3{^-}-N$ ISME were $10^{-4.44}M$ and $10^{-4.62}M$, respectively. Since the ISME with $5{\sim}10{\mu}m$ of tip diameter showed a faster response time than that of $1{\sim}5{\mu}m$, the ISME with a tip diameter of $5{\sim}10{\mu}m$ was fabricated and used to make real-time ion detections. Direct monitoring of $NH_4{^+}-N$ and $NO_3{^-}-N$ concentrations in the aerobic (2) tank causes the instability of the electromotive force (EMF) for the initial 5~8 hours and also causes remarkable error values of $NH_4{^+}-N$ and $NO_3{^-}-N$ concentration. This phenomenon is caused by aeration and mixing in the reactor. Thus, the measuring chamber was newly designed for the aerobic (2) tank and then the EMF of the ISME were stabilized in less than 1 hour. Errors of $NH_4{^+}-N$ and $NO_3{^-}-N$ concentration were decreased after stabilization of the EMF. The ISME analysis were well corresponded to the results of auto analyzer and ion chromatography. Consequently, the concentration of $NH_4{^+}-N$ and $NO_3{^-}-N$ could be continuously measured for 178 hours by the ISME.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.41-47
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• 1999

In this paper, we report 3D-simulations of a plasma etching process by employing cell-removal algorithm takes into account the mask shadow effect os well as spillover errors. The developed simulator haas an input interface to take not only an analytic form but a Monte Carlo distribution of the ions. The graphic user interface(GUI) was also built into the simulator for UNIX environment. To demonstrate the capability of 3D-SURFILER(SURface proFILER), we have simulated for a typical contact hole structure with 36,000($30{\times}40{\times}30$) cells, which takes about 20 minutes with 10 Mbytes memory on sun ultra sparc 1. as an exemplary case, we calculated the etch profile during the reactive ion etching(RIE) of a contact hole wherein the aspect ratio is 1.57. Furthermore, we also simulated the dependence of a damage parameter and the evolution of topography as a function of the chamber pressure and the incident ion flux.