• 한국세라믹학회지
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• 제42권4호
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• pp.287-291
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• 2005

나노인덴테이션 시험시의 알루미늄의 팝인 변형에 대하여 연구하였다. 팝인 현상은 알루미늄의 표면 상태에 따라서 발생 유무가 결정되었다. 기계연마한 알루미늄에서는 팝인이 일어나지 않았고, 전해연마한 시편에서만이 팝인이 일어났다. 팝인이 일어나는 경우에는 나노인덴테이션 초기단계에서 탄성변형이 일어났으며 그 후에 갑자기 팝인 변형이 일어났으며 팝인 후에는 탄소성 변형이 일어났다. 전위 활동에 근거한 팝인 발생 메카니즘을 제시하였으며 이는 FIB와 TEM에 의한 미세구조 분석 결과와 일치하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.351-352
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• 2006

BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of $Bi_2O_3$. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of $Bi_2O_3$.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.997-1002
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• 2002

BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about 730$^{\circ}C$ and decreased linearly over about 730$^{\circ}C$ In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$\sub$2/O$\sub$3/. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of Bi$\sub$2/O$\sub$3/.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.143-147
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• 2004

Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_{2}O_{3}$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.252-255
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• 2002

BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of $Bi_{2}O_{3}$. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of $Bi_{2}O_{3}$.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 춘계종합학술대회
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• pp.623-626
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• 2002

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, Tsub, and ozone gas pressures, pO$_3$. The correlation diagrams of the BSCCO phases with Tsub and pO$_3$are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputterina Bi2201 and Bi2223 as well as Bi2212 phases come out as stable phases depending on Tsub and pO$_3$. From these results, the thermodynamic evaluation of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase, was performed.

• 반도체디스플레이기술학회지
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• 제1권1호
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• pp.1-7
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• 2002

Modem technology depends on the reliability of extremely high precision equipments. In the production of semiconductor wafer, optical and electron microscopes, ion-beam, laser device must maintain their alignments within a sub-micrometer. This equipment requires a vibration free environment to provide its proper function. Therefore, this high technology equipments require very strict environmental vibration criteria because it is used as basic data for the design of building structure and structural dynamics of equipment. In this paper, the new approach is proposed to investigate the mismatch problem of time and frequency domain for vibration criteria of sensitive equipment. The proposed approach is based on a vibration measurement data and a relative transfer function which can be obtained by experiment or analysis.

• 대한인간공학회지
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• 제7권2호
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• pp.23-30
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• 1988

The methods suggested up to now for 3-dimensional anthroponetry require much efforts and costs in measuring and analysing. To solve these problems, we adopt the methods such as Moire Interferometry, Image processing and Computer Vision Technique which are efficient in processing anthropomorphic data. Moire contourgraph was constructed by using Ar-ion laser as a light source (2 Watt power and 5145 A wavelength) and laser beam expander(20X). Image data can be 3-dimensionally reconstructed as the surface patch and geographical relation between faces expressed by mash-point and edges as units. This research is focused on the followings; 1) Development of an economical and reliable measuring method. 2) Design of reproduction methods of 3-dimensional human body data. Therefore, our research makes it possible to study further advanced quantitative analysis of human body.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.3-7
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• 1998

The rare-earth ions (R3+, R=Nd, Er) doped CaF2 layers have been grown on CaF2(111) substrate by molecular beam epitaxy. The epitaxial relationship and the crystallinity of CaF2:R3+ layers depending on the concentration of R3+ were studied by reflection high-energy electron diffraction (RHEED). In aspect of application as buffer layer in semiconductor-related hybrid structure, the lattice displacement between CaF2:R3+ layers and CaF2(111) substrate was investigated by X-ray rocking curve analysis.