• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.262-268
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• 1999

Polycarbonate (PC) and Polymethylmethacrylate (PMMA) surface was modified by ion assisted reaction (IAR) technique to obtain the hydrophilic functional groups and improve the wettability. In conditions of ion assisted reaction, ion beam energy was changed from 500 to 1500eV, and ion dose and oxygen gas blown rate were fixed $1\times10^{16}$ ions/$\textrm{cm}^2$ and 4ml/min, respectively. Wetting angle of water on PC and PMMA surface modified by $Ar^+$ ion without blowing oxygen at 4ml/mon showed $5^{\circ}$ and $10^{\circ}$. Changes of wetting angle with oxygen gas and $Ar^+$ ion irradiation were explained by considering formation of hydrophilic group due to a reaction between irradiated polymer chain by energetic ion irradiation and blown oxygen gas. X-ray photoelectron spectroscopy analysis shows that hydrophilic groups such as -C-O, -(C=O)- and -(C=O)-O- are formed on the surface of polymer by chemical interaction. The polymer surface modification using ion assisted reaction only changed the surface physical properties and sept the bulk properties. In comparison with other modification methods, the surface modification by IAR treatment was chemically stable and enhanced the adhesion between metal and polymer surface. The applications of various kinds of polymer surface modification methods, metal and polymer surface. The applications of various kinds of polymer surface modification could be appled to the new materials about hydrophilic surface properties by IAR treatment. The adhesion between metal film and polymer measured by Scotch tape test whether the hydrophilic surfaces could improve the adhesion strength or not.

• Journal of Advanced Marine Engineering and Technology
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• v.25 no.3
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• pp.631-635
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• 2001

The major problems associated with the manufacturing processes of the microaccelerometer based on the tunneling current concept is the residual stress. This paper deals with finite element analysis of residual stress causing pop up phenomenon which are induced in micromachining processes for a microaccelerometers sensor using silicon on insulator(SOI) wafer. After heating the tunnel gap up to $100^{\circ}C$and get it through cooling process and the additional beam up to $80^{\circ}C$get it through the cooling process. We learn the residual stress of each shape and compare the results with each other, after heating the tunnel gap up to $400^{\circ}Cduring$ the Pt deposition process. The equivalent stresses produced during the heating process of focused ion beam(FIB) cut was also to be about $0.02~0.25Pa/^{\circ}C$and cooling process the gradient of residual stresses of about $8.4\{times}10^2Pa/{\mu}m$ still at cantilever beam and connected part of paddle. We want to seek after the real cause of this pop up phenomenon and diminish this by change manufacturing processes of microaccelerometer sensors.

• Korean Journal of Optics and Photonics
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• v.9 no.3
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• pp.162-167
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• 1998

$SiO_xF_y$ optical thin films of lower refractive indices than glass substrates were fabricated by the CF$_4$ ion beam assisted deposition method and the optical, structural and chemical properties of them were investigated. Refractive index of $SiO_xF_y$ films was varied from 1.455 to 1.394 by decreasing the anode voltage or from 1.462 to 1.430 by increasing the current density of end-Hall ion source. FT-IR and XPS analyses show that as the F concentration increases, the Si-O bond at $1080m^{-1}$ shifts to higher wavenumber, the OH bonds are reduced drastically, and the fluorine atoms at the air-film interface are desorbed out by reacting with $H_2O$ in the atmosphere. $SiO_xF_y$ thin films are amorphous by the XRD analysis and have the compressive stress below 0.3 GPa. As an application of $SiO_xF_y$ thin films a two-layer antireflection coating was fabricated using a $SiO_xF_y$ film as a low refractive index layer and a Si film as an absorbing one.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.36-42
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• 1999

Field emission behaviors from diamond-like carbon films were investigated. The films were deposited on n-type Si wafer by ion beam sputtering method using 3 cm Kaufman type ion source. Regardless of the film thicknesses and atomic bond structure, the emission current was much enhanced by electrical breakdown between anode and the film surface. The effective work function was estimated to be about 0.1 eV. In order to identify the emission site, tungsten tip was scanned the damaged region damaged region but localized to a specific site. Analysis using Auger electron spectroscopy and SEM shows that SiC compound was not a sufficient condition for the electron emission. This result showed that the enhanced emission was mainly due to the changes in the chemical bond of the damaged region rather than the enhanced electric field caused by the morphological change.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.533-534
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• 2006

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05b
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• pp.935-940
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• 1998

The Korea Superconducting Tokamak Research (KSTAR) tokamak will have 6 MW of radio-frequency (rf) heating in the ion cyclotron range of frequencies (ICRF). The response of the antenna to the heat loads is analyzed and the resulting stresses in the Faraday shield during the normal operation is calculated. Various heat loading conditions including in the analyzes are the heat loads from the plasma, the ripple-trapped beam particles and the rf loss.

• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.699-702
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• 1997

The cross sectional image of thin oxide failure of MOS device could be observed by Emission Microscope and Focused Ion Beam at the weak point. The oxide failures in low electric field was associated with the presence of a particle or abnormal pattern. The failures occuring at medium field are related to a pit of Si substrate. The pits could be originated from the microdefects of Cz Si wafer.

• Korean Journal of Materials Research
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• v.6 no.6
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• pp.605-609
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• 1996

MOS 소자의 얇은산화막(thin oxide)불량을 화학적으로 식각하지 않고 불량부위를 광전자방사(photon emission)반응을 이용하여 위치를 확인하고, 이곳을 FIB로 절단하여 불량부위의 단면을 관찰했다. 20nm 두께의 SiO2불량은 셀(cell)영역의 위치에 따른 의존성은 없고, 불량은 저전계의 입자(particle)성 불량과 중간전계의 Si 기판 핏(pit)과 관련된 불량이 주였다. 고전계에서는 전형적인 SiO2 산화막의 절연파괴가 일어난 것이 관찰된다.

• Korean Journal of Plant Tissue Culture
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• v.26 no.4
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• pp.245-250
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• 1999

Plantlets derived from leaf blade-segment culture of a variegated tobacco (Nicotiana tabacum L. cv. BY-4) that was induced by a heavy-ion ($^{14}N$) beam irradiation to proembryos, were characterized. When explants from both white and green sections of leaves of the variegated plant were cultured on MS medium containing 0.1 mg/L NAA and 1.0 mg/L BAP, the white sections yielded only white shoots, whereas the green sections generated approximately 47.2% green, 37.4% white and 15.4% variegated shoots. In the F1 generation of a green tobacco derived from the leaf blade-segment culture, the segregation ratio of green to white was 1,651:54. Furthermore, reciprocal crosses showed that all of the progenies was green, indicating that the variegation is not maternally inherited. When the signal intensity of photosynthesis genes was determined by DNA gel blot analysis using the variegated leaves derived from green sections of variegated leaves, there were more of the rbcL, psbA, 16S rDNA and 23S rDNA chloroplast genes in the white sections than the chloroplast genes in wild type and green sections of the variegated plants.

• Applied Microscopy
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• v.45 no.4
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• pp.218-224
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• 2015

A technical overview on the various sample preparation methods for electron backscattered diffraction (EBSD) analysis is carried out. The mechanical polishing with colloidal silica finish, electro-chemical polishing, dual layer coating and ion beam milling are introduced for the common sample preparation methods for EBSD observation and some issues that are frequently neglected by the common EBSD users but should be considered to get a reliable EBSD data are discussed. This overview would be especially helpful to the people who know what EBSD technique is but do not get a reliable EBSD data because of difficulties in sample preparation.