• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.145-145
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• 2011

Light-emitting diodes (LEDs) based on III-nitrides compound semiconductors have achieved a high performance device available for display and illumination sector. However, the conventional c-plane oriented LED structures are still showing several problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. The QCSE results in spatial separation of electron and hole wavefunctions in quantum wells, thereby decreasing the internal quantum efficiency and red-shifting the emission wavelength. Due to demands for improvement of device performance, nonpolar structure has been attracting attentions, since the quantum wells grown on nonpolar templates are free from the QCSE. However, current device performance for nonpolar LEDs is still lower than those for conventional LEDs. In this study, we discuss the potential possibilities of nonpolar LEDs for commercialization. In this study, we characterized current-light output power relation of the a-plane InGaN/GaN LEDs structures with the variation of quantum well structures. On-wafer electroluminescence measurements were performed with short pulse (10 us) and low duty factor (1 %) conditions applied for eliminating thermal effects. The well and barrier widths, and indium compositions in quantum well structures were changed to analyze the efficiency droop phenomenon.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.27-32
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• 1993

Separate-confinement hetero-structure (SCH) broad area Laser Diodes (LD's) were fabricated from $Al_{0.07}$Ga$_{0.93}$/. As single-quantum-well (SQW) grown by metal organic chemical vapor deposition (MOCVD). Under pulsed operation, we obtained maximum output powers of about 0.8watt/facet and 1.83watt/facet from LD's with 60$\mu$m and 160$\mu$m channel width, respectively, without facet coatings. The differential quantum efficiency of the 60$\mu$m wide LD was about 21.7%/facet and its threshold current density was about 1k [A/cm$^{2}$]. The differential quantum efficiency of the 160$\mu$m wide LD was about 25.6%/facet and its threshold current density was about 1k[A/cm$^{2}$]. The minimum threshold current density of 60$\mu$m wide LD's was 620[A/cm$^{2}$] when the cavity length was 603$\mu$m and the minimum threshold current density of 160$\mu$m wide Ld's was 675[A/cm$^{2}$] when the cavity length was 752$\mu$m. The internal quantum efficienty and the internal loss of both LD's were 92.3% and 18.1cm$^{1}$, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.11a
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• pp.11.1-11.1
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• 2008

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.588-593
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• 2014

Current crowding problem can worsen the internal quantum efficiency and the negative-voltage ESD of InGaN-based LEDs. In this paper, by using photon emission microscope and thermal emission microscope measurement, we confirmed that the electric field and the current of the InGaN-based LED sample are crowded in specific regions where the distance between p-type metal contact and n-type metal contact is shorter than other regions. To improve this crowding problem of electric field and current, modified metal contact geometry having uniform distance between the two contacts is proposed and verified by a numerical simulation. It is confirmed that the proposed structure shows better current spreading, resulting in higher internal quantum efficiency and reduced reverse leakage current.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• Bulletin of the Korean Chemical Society
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• v.22 no.1
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• pp.63-67
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• 2001

The photophysical properties and the singlet oxygen generation efficiency of tetrathiarubyrin have been investigated to elucidate the possibility of its use as a photodynamic therapy (PDT) photosensitizer by steady-state and time-resolved spectroscopic methods. The observed photophysical properties were affected by various molecular aspects, such as extended ${\pi}conjugation$, structural distortion, and internal heavy atom. The steady-state electronic absorption spectrum was red-shifted due to the extended $\pi-conjugation$, and the spin orbital coupling was enhanced by the structural distortion and the internal heavy atom effect. As a result of the enhanced spin orbital coupling, the triplet quantum yield increased to 0.90 $\pm$ 0.10 and the triplet state lifetime was shortened to 7.0 $\pm$ 1.2 ${\mu}s$. Since the triplet state decays at a relatively faster rate, the efficiency of the oxygen quenching of the triplet state decreases. The singlet oxygen quantum yield was estimated to be 0.52 $\pm$ 0.02, which is somewhat lower than expected. On the other hand, the efficiency of singlet oxygen generation during the oxygen quenching of triplet state, $f{\Delta}^T$, is near unity. Such high efficiency of singlet oxygen generation can be explained by the following two possible factors: The hydrogen bonding of ethanol which impedes the deactivation pathway of the charge transfer complex with oxygen to the ground state, the less probability of the aggregation formation.

• Nuclear Engineering and Technology
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• v.52 no.5
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• pp.1043-1050
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• 2020

Radioactive aerosols are produced during the cutting of contaminated and activated metals. They must be collected and removed by a high-performing filtration system before releasing to the environment from the decommissioning workplace. The filtration system requires regular replacement to ensure the sufficient removal of radioactive aerosols because its filtration efficiency gradually decreases. This study evaluates the efficiency and lifetime of filters while cutting metals by using a plasma arc cutter. Particularly, this study considers the aerodynamic diameter distribution of number and mass concentrations for aerosols from 6 nm to 10 ㎛ when evaluating the performance of filters. After 20 time reuses for cutting operation performed in a cutting chamber, the removal efficiency is reduced from over 99 to below 93% at 2 ㎛. The results are used to analyze the lifetime of filters, the frequencies of their replacements, and impact on internal radiation dose.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.79-86
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• 1994

Gain-guided broad-area single quantum well separate confinement heterostructure diode lasers have been fabricated from structures grown by metal organic vapor phase epitaxy. The active layer of the epi-structure is InGaAs emitting 962-965nm and the guiding layer GaAs. The channel width is fixed to 150${\mu}$m and the cavity length varys within the range of 300~800${\mu}$m. For uncoated LD's, the output power of 0.7W has been obtaained at a pulsed current level of 2A, which results about 60% external quantum efficiency. The threshold current density is 200A/cm$^{2}$ for the cavity lengths of 800.mu.m LD's. The stain effect upon the transparent current density has been observed. The internal quantum efficiency is expected to be 88% and the internal loss to be 18$cm^{-1}$. The beam divergence has been measured to be 7$^{\circ}$to lateral and 40$^{\circ}$to transverse direction. finally, 1.2W continuous-wave output power has been obtained at a current level of 2A for AR/HR coated LD's die-bonded on Cu heat-sink and cooled by TEC.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.233-236
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• 2012

In this paper, the output characteristics of GaN-based LED considering blocking layer design variables are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering Al mole fraction of EBL, thickness of EBL, Al mole fraction of HBL and doping concentration of HBL are analyzed using ISE-TCAD.

• Journal of the Optical Society of Korea
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• v.2 no.1
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• pp.13-21
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• 1998

Based on the escape cone concepts, high-brightness light-emitting diodes (LEDs) have been analyzed. In AlGaAs or InGaAlP LEDs, photon absorption in the ohmic region under the electrode is known to be significant. Thus, ins general, a thick window layer (WL) and a transparent substrate (TS) would minimize photon shielding by the electrodes and considerably improve photon output coupling efficiency. However, the schemes do not seem to be necessary in InGaN system. Photon absorption in ohmic contact to a wide bandgap semiconductor such as GaN may be negligible and, as a result, the significant photon shielding by the electrodes will not degrade the photon output coupling efficiency so much. The photon output coupling efficiency estimated in InGaN LEDs is about 2.5 - 2.8 times that of the conventional high-brightness LED structures based on both WL and TS schemes. As a result, the extenal quantum efficiency in InGaN LEDs is as high as 9% despite the presumably very low internal quantum efficiency.