• Title/Summary/Keyword: Internal Matching Circuit

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Hand-effect compensation circuit design using the low-voltage MEMS switch in the handset (저전압 MEMS 스위치를 적용한 휴대단말기의 인체효과 보상회로 설계)

  • Kim, Wang-Jin;Lee, Kook-Joo;Park, Yong-Hee;Kim, Moon-Il
    • Journal of IKEEE
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    • v.13 no.3
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    • pp.1-6
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    • 2009
  • In this paper, the external matching circuits were designed in order to compensate the efficiency which decreases by human body effect in the internal antenna phone. Comparing the two types of matching circuit, we selected the structure to minimize the switch stress. RF MEMS switch using low voltage was compared with FET switch and measured the performance in the handset. Here, the detection circuit which can couple th reflection power from antenna was added in the handset and we set up the demonstration system that can compensate the loss of hand effect automatically. In this system, when hand effect occurred, the radiation power increased 2.5dB by operation the matching circuit.

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Planar DVB-T Antenna Using a Patterned Helical Line and Matching Circuit

  • Lim, Jong-Hyuk;Yun, Tae-Yeoul
    • ETRI Journal
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    • v.34 no.3
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    • pp.454-457
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    • 2012
  • A miniaturized planar digital video broadcasting terrestrial (DVB-T) antenna, which is composed of a patterned helical line, an open stub, and an impedance matching circuit on an FR4 (${\varepsilon}_r$=4.4) substrate for portable media player applications, is presented in this letter. The antenna has monopole-like, omni-directional radiation characteristics and a wide impedance bandwidth (VSWR<3) in the DVB-T band from 174 MHz to 230 MHz at the VHF band.

Internal Pattern Matching Algorithm of Logic Built In Self Test Structure (Logic Built In Self Test 구조의 내부 특성 패턴 매칭 알고리즘)

  • Jeon, Yu-Sung;Kim, In-Soo;Min, Hyoung-Bok
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1959-1960
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    • 2008
  • The Logic Built In Self Test (LBIST) technique is substantially applied in chip design in most many semiconductor company in despite of unavoidable overhead like an increase in dimension and time delay occurred as it used. Currently common LBIST software uses the MISR (Multiple Input Shift Register) However, it has many considerations like defining the X-value (Unknown Value), length and number of Scan Chain, Scan Chain and so on for analysis of result occurred in the process. So, to solve these problems, common LBIST software provides the solution method automated. Nevertheless, these problems haven't been solved automatically by Tri-state Bus in logic circuit yet. This paper studies the algorithm that it also suggest algorithm that reduce additional circuits and time delay as matching of pattern about 2-type circuits which are CUT(circuit Under Test) and additional circuits so that the designer can detect the wrong location in CUT: Circuit Under Test.

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Implementation of Front End Module for 2.4GHz WLAN Band (2.4GHz 무선랜 대역을 위한 Front End Module 구현)

  • Lee, Yun-Sang;Ryu, Jong-In;Kim, Dong-Su;Kim, Jun-Chul;Park, Jong-Dae;Kang, Nam-Kee
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.1
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    • pp.19-25
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    • 2008
  • In this paper, the front end module (FEM) was proposed for 2.4GHz WLAN band by LTCC multilayer application. The FEM was composed of power amplifier IC, switch IC, and LTCC module. LTCC module consists of output matching circuit and lowpass filter as Tx part, bandpass filter as Rx part. Design of output matching circuit for LTCC was used matching parameter from output matching circuit based on lumped circuit on the PCB board. The dielectric constant of LTCC substrate is 9. The substrate was composed of total 26 layers with each 30um thickness. Ag paste was used for the internal pattern as the conductor material. The size of the module is $4.5mm{\times}3.2mm{\times}1.4mm$. The fabricated FEM showed the gain of 21dB, ACPR of less than -31dBc first side lobe and Less than -59dBc second side lobe and the output power of 23Bm at P1dB.

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Design of temperature sensing circuit measuring the temperature inside of IC (IC내부 온도 측정이 가능한 온도센서회로 설계)

  • Kang, Byung-jun;Kim, Han-seul;Lee, Min-woo;Son, Sang-hee;Jung, Won-sup
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.838-841
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    • 2012
  • To avoid the damage to circuit and performance degradation by temperature changes, temperature sensing circuit applicable to the IC is proposed in this paper. Temperature sensing is executed by PTAT circuit and power saving mode is activated by internal switch if internal temperature is in high. Also, characteristics of current matching are increased by using current mirror and cascode circuits. From the simulation results, this circuit is operating in action mode if input signal is in low. But it immediately goes into power saving mode if output signal is in high. It shows the output voltage of 1V at $75^{\circ}C$ and 1.75V at $125^{\circ}C$ in action mode and near 0 V(0V~ 7uV) in power saving mode.

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Design of Miniaturized Microwave Amplifier Using Capacitively-Coupled Match Circuit(CCMC) under Conditionally Stable State (조건 안정 상태에서의 용량성 결합 정합 회로를 이용한 소형 마이크로파 증폭기 설계에 관한 연구)

  • Ryu, Seung-Kab;Hwang, In-Ho;Kim, Yong-Hoon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.10 s.113
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    • pp.929-934
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    • 2006
  • In the paper, we suggest a simpler synthesis technique for capacitively-coupled match circuit(CCMC) which have a function of DC block and impedance matching simultaneously, and introduce a stability margin analysis technique for designing microwave amplifier under conditionally stable state. Stability margin analysis is used to determine optimum match point that ensure maximum gain under the given stability margin. It can reduce time consuming work for selecting match points in the conditionally stable state. Also, suggested miniaturization scheme of matching network is distinguished from previous work with respect to reducing deterministic parameters for CCMC synthesis. To verify utility of suggested method, 24 GHz gain block is fabricated under conditionally stable state using an internal thin-film fabrication process, Measured results show a stable gain of 10 dB and flatness of 1 dB, which is well coincident with simulated one.

A 2.65 GHz Doherty Power Amplifier Using Internally-Matched GaN-HEMT (내부정합된 GaN-HEMT를 이용한 2.65 GHz Doherty 전력증폭기)

  • Kang, Hyunuk;Lee, Hwiseob;Lim, Wonseob;Kim, Minseok;Lee, Hyoungjun;Yoon, Jeongsang;Lee, Dongwoo;Yang, Youngoo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.3
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    • pp.269-276
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    • 2016
  • This paper presents a 2.65 GHz Doherty power amplifier with internally-matched GaN HEMT. Internal matching circuits were adopted to match its harmonic impedances inside the package. Simultaneously, due to the partially matched fundamental impedance, input and output matching networks become simpler. Bond wires and parasitic elements of transistor package were predicted by EM simulation. For the LTE signal with 6.5 dB PAPR, the implemented Doherty power amplifier shows a power gain of 13.0 dB, a saturated output power of 55.4 dBm, an efficiency of 49.1 %, and ACLR of -26.3 dBc at 2.65 GHz with an operating voltage of 48 V.

Effects on Impedance Mismatch by Dk Variation with Operating Frequency (동작 주파수에 따른 Dk의 변화가 임피던스 부정합에 미치는 영향)

  • Lee, Jong-Hak;Kim, Chang-Gyun;Ra, Young-Eun;Lee, Keon-Min;Lee, Seongsoo
    • Journal of IKEEE
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    • v.23 no.4
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    • pp.1473-1476
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    • 2019
  • Accurate material information is very important in PCB (Printed Circuit Board) design. In an integrated mast of a battleship, heat reduction is essential for stealth functionality. So heat dissipation from internal control equipments should be reduced as much as possible. Control equipments mostly consist of PCBs, but it often suffers from impedance mismatching due to imprecise Dk (Dielectric Constant), which significantly increases heat dissipation. In this paper, measurement methods of Dk is investigated. Also, effects on impedance mismatch by Dk variation with operating frequency is investigated.

Light Output Characteristics of an Electrodeless Discharge Lamp Using H-Discharge of External Coil Configuration (외부코일형 전자유도결합방전을 이용한 무전극 램프의 광출력 특성)

  • Kim, Hyun-Gwan;Gwark, Jae-Young;Song, Sang-Bin;Yeo, In-Seon
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1401-1403
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    • 1995
  • This paper investigates the light output characteristics of an electrodeless H-discharge lamp. The existing cylindrical fluorescent lamps were wound around with an induction coil of varying size, and were driven by RF power. The light output and the luminous efficacy were measured according to variations of the induction coil gap and the lamp power, respectively. The experimental results show that the luminous efficacy of the lamp is as much as existing electrodeless lamps and the luminous efficacy of lamps are high between 10W and 20W. Theoretical analyses using computer simulation show that the circuit matching is easier in the external coil configuration than in the internal one, and that the current and the power distributions near the coil are shower in t.

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Wideband Class-J Power Amplifier Design Using Internal Matched GaN HEMT (내부정합된 GaN HMET를 이용한 광대역 J-급 전력증폭기 설계)

  • Lim, Eun-Jae;Yoo, Chan-Se;Kim, Do-Gueong;Sun, Jung-Gyu;Yoon, Dong-Hwan;Yoon, Seok-Hui;Rhee, Young-Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.2
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    • pp.105-112
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    • 2017
  • In order to satisfy the diffusion of multimedia service in mobile communication and the demand for high-speed communication, it is essential to modify and improve high efficiency, wideband and nonlinear characteristic of multiband power amplifier. This research is designed to implement a single-stub matching circuit as a 2nd harmonic one that meets conditions of the Class-J power amplifier. Low characteristic impedance of the single-stub line is necessary to suit conditions of wideband Class-J. This research uses ceramic substrates having high permittivity to implement the single-stub line with low characteristic impedance, which eventually results in an amplifier satisfying the output impedance terms of Class-J in wideband frequency range. This result attributes to use of GaN HEMT packaged with a 2nd harmonic matching circuit and external fundamental circuit. The measurement results of the Class-J amplifier confirms the following characteristics: more than output power of 50 W(47 dBm) in bandwidth of 1.8~2.7 GHz(0.9GHz), maximum drain efficiency of 72.6 %, and maximum PAE characteristic of 66.5 %.