• Title/Summary/Keyword: Internal Interfaces

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A Tactical Model for the Economic Justification of Flexible Manufacturing System Installation (유연생산(柔軟生産) 시스템 도입(導入)의 경제적 타당성 평가(經濟的 妥當性 評價)를 위한 전술적(戰術的) 모델)

  • Kim, Seong-In;Kim, Seung-Gwon;Gang, Seok-Hyeon;Park, Tae-Hyeong
    • IE interfaces
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    • v.1 no.2
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    • pp.1-12
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    • 1988
  • A justification methodology which evaluates the tactical aspects of an FMS project is proposed. For evaluation of quantifiable tactical costs/savings a method of internal rate of return on incremental investment is developed while for the tactical ones which are difficult to quantify a weighted factor scoring model is proposed.

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Effect of Ceramic-Electrode Interface on the Electrical Properties of Multilayer Ceramic Actuators (적층형 세라믹 액츄에이터의 세라믹-전극간 계면이 전기적 특성에 미치는 영향에 대한 연구)

  • 하문수;정순종;송재성;이재신
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.10
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    • pp.896-901
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    • 2002
  • The polarization and strain behavior of multilayer ceramic actuators fabricated by tape casting using a PNN-PZT ceramics were investigated in association with electrode size and internal layer number. Spontaneous polarization and strain decreased with increasing electrode size. In addition, the increase of internal layer number brought reduced spontaneous polarization and increased the field-induced strain. Because the actuators structure is designed to stack ceramic layer and electrode layer alternatively, the ceramic-electrode interfaces may act as a resistance to motion of domain wall. To analyze the effect of ceramic-electrode interface, the diffraction intensity ratio of (002) to (200) planes was calculated from X-ray diffraction patterns of samples subjected to a voltage of 200 V. The diffraction intensity ratio of (002) to (200) planes was decreased with increasing electrode size and internal layer number. The diffraction intensity ratio and straining behavior analyses indicate that the Polarization and strain were affected by the amount of 90°domain decreasing with increasing electrode size and internal layer number. Consequently, the change of polarization and displacement with respect to electrode size and layer number is likely to be caused by readiness of the domain wall movement around the interface.

Implementation of a Speaker-independent Speech Recognizer Using the TMS320F28335 DSP (TMS320F28335 DSP를 이용한 화자독립 음성인식기 구현)

  • Chung, Ik-Joo
    • Journal of Industrial Technology
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    • v.29 no.A
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    • pp.95-100
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    • 2009
  • In this paper, we implemented a speaker-independent speech recognizer using the TMS320F28335 DSP which is optimized for control applications. For this implementation, we used a small-sized commercial DSP module and developed a peripheral board including a codec, signal conditioning circuits and I/O interfaces. The speech signal digitized by the TLV320AIC23 codec is analyzed based on MFCC feature extraction methed and recognized using the continuous-density HMM. Thanks to the internal SRAM and flash memory on the TMS320F28335 DSP, we did not need any external memory devices. The internal flash memory contains ADPCM data for voice response as well as HMM data. Since the TMS320F28335 DSP is optimized for control applications, the recognizer may play a good role in the voice-activated control areas in aspect that it can integrate speech recognition capability and inherent control functions into the single DSP.

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An MVP-based XML Language for User Interfaces (사용자 인터페이스를 위한 MVP기반의 XML 언어)

  • 최종명;신경희;유재우
    • Journal of KIISE:Software and Applications
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    • v.29 no.12
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    • pp.947-956
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    • 2002
  • It is advantageous to use XML in developing user interfaces, since XML is independent from platforms and languages and it is easy to learn and use. The existing XML-based languages do not adopt formal model, and they are developed in ad hoc manner. Moreover, they provide limited facilities to handle user events, and combine user interface components with internal logics. In this paper, we introduce an extended MVP (EMVP) model, which is extended from MVP (Model-View-Presenter), and XUIML, which is a new XML application based on the EMVP to support user interface. XUIML provides useful methods to build user interface, including methods to describe actions on user events, data flows between objects, and internal logics. The XUIML system provides two style editors - text editor and graphic editor. It also provides two code generators. One generates Java source, and the other generate C# code from XUIML document. The XUIML graphic editor allows users to manipulate XML elements directly, and we can gain high productivity with the graphic editor.

A Study on Accelerated Built-in Self Test for Error Detecting in Multi-Gbps High Speed Interfaces (수 Gbps 고속 인터페이스의 오류검출을 위한 자가내장측정법의 가속화 연구)

  • Roh, Jun-Wan;Kwon, Kee-Won;Chun, Jung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.12
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    • pp.226-233
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    • 2012
  • In this paper, we propose a 'linear approximation method' which is an accelerated BER (Bit Error Rate) test method for high speed interfaces, based on an analytical BER model. Both the conventional 'Q-factor estimation method' and 'linear approximation method' can predict a timing margin for $10^{-13}$ BER with an error of about 0.03UI. This linear approximation method is implemented on a hardware as an accelerated Built-In Self Test (BIST) with an internal BERT (BET Tester). While a direct measurement of a timing margin in a 3Gbps interface takes about 5.6 hours with $10^{-13}$ BER requirement and 95% confidence level, the accelerated BIST estimates a timing margin within 0.6 second without a considerable loss of accuracy. The test results show that the error between the estimated timing margin and the timing margin from an actual measurement using the internal BERT is less than 0.045UI.

A Thermal Model for Silicon-on-Insulator Multilayer Structure in Silicon Recrystallization Using Tungsten Lamp (텅스텐 램프를 이용한 실리콘 재결정시의 SOI 다층구조에 대한 열적모델)

  • 경종민
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.21 no.5
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    • pp.90-99
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    • 1984
  • A onetimensional distribution of the temperature and the heat source in the SOI (silicon-on-insulator) multi-layer structure illuminated by tungsten lamps from both sides was obtained by solving the heat equation in steady state on a finite difference grid using successive over-relaxation method. The heat source distribution was obtained by considering such features as spectral components of the light source, multiple reflection at the internal interfaces, temperature and frequency dependence of the light absorption coefficient, etc. The front and back surface temperatures, which are boundary conditions for the heat equation, were derived from a requirement that they satisfy the radiation conditions. The radiation flux as well as the conduction flux was considered in modelling the thermal behaviour at the internal interfaces. Since the temperature and the heat source profiles are strongly dependent upon each other, the calculation of each profile was iterated using the updated profile of the other until they are consistent with each other. The experimental temperature at the front surface of the wafer as measured by Pyrometer was about 1200$^{\circ}$K, while the simulated temperature was 1120$^{\circ}$K.

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Cavity and Interface effect of PI-Film on Charge Accumulation and PD Activity under Bipolar Pulse Voltage

  • Akram, Shakeel;Wu, Guangning;Gao, GuoQiang;Liu, Yang
    • Journal of Electrical Engineering and Technology
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    • v.10 no.5
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    • pp.2089-2098
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    • 2015
  • With the continuous development in insulation of electrical equipment design, the reliability of the system has been enhanced. However, in the manufacturing process and during operation under continues stresses introduce local defects, such as voids between interfaces that can responsible to occurrence of partial discharge (PD), electric field distortion and accumulation of charges. These defects may lead to localize corrosion and material degradation of insulation system, and a serious threat to the equipment. A model of three layers of PI film with air gap is presented to understand the influence of interface and voids on exploitation conditions such as strong electrical field, PD activity and charge movement. The analytical analysis, and experimental results are good agreement and show that the lose contact between interfaces accumulate more residual charges and in consequences increase the electric field intensity and accelerates internal discharges. These residual charges are trapped charges, injected by the electrodes has often same polarity, so the electric field in cavities increases significantly and thus partial discharge inception voltage (PDIV) decreases. Contrary, number of PD discharge quantity increases due to interface. Interfacial polarization effect has opposite impact on electric field and PDIV as compare to void.

A Novel 3-Level Transceiver using Multi Phase Modulation for High Bandwidth

  • Jung, Dae-Hee;Park, Jung-Hwan;Kim, Chan-Kyung;Kim, Chang-Hyun;Kim, Suki
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.791-794
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    • 2003
  • The increasing computational capability of processors is driving the need for high bandwidth links to communicate and store the information that is processed. Such links are often an important part of multi processor interconnection, processor-to-memory interfaces and Serial-network interfaces. This paper describes a 0.11-${\mu}{\textrm}{m}$ CMOS 4 Gbp s/pin 3-Level transceiver using RSL/(Rambus Signaling Logic) for high bandwidth. This system which uses a high-gain windowed integrating receiver with wide common-mode range which was designed in order to improve SNR when operating with the smaller input overdrive of 3-Level. For multi-gigabit/second application, the data rate is limited by Inter-Symbol Interference (ISI) caused by low pass effects of channel, process-limited on-chip clock frequency, and serial link distance. In order to detect the transmited 4Gbps/pin with 3-Level data sucessfully ,the receiver is designed using 3-stage sense amplifier. The proposed transceiver employes multi-level signaling (3-Level Pulse Amplitude Modulation) using clock multi phase, double data rate and Prbs patten generator. The transceiver shows data rate of 3.2 ~ 4.0 Gbps/pin with a 1GHz internal clock.

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Elimination of the Fabry-Perot effect in a $4{\times}4$ matrix method ($4{\times}4$ 행렬 연사에서 Fabry-Perot 간섭효과의 제거방법)

  • 우성일;백흠일;박구현;박세민;이기동;윤태훈;김재창
    • Korean Journal of Optics and Photonics
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    • v.9 no.1
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    • pp.5-8
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    • 1998
  • In calculating the light propagation in inhomogeneous uniaxial materials by using a conventional $4{\times}4$ matrix method, Fabry-Perot effect is caused by inherent multiple internal reflections at interfaces for monochromatic light source. In this paper we propose an apodization method by which we can eliminate in negligible time the interference fringe in the $4{\times}4$ matrix optics. For a cell with k abrupt interfaces, the new apodization method can be implemented simply by, at maximum, (k+1) addtional $4{\times}4$ matrix multiplications in calculating the complete transfer matrix of the cell.

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Fit of Fixture/Abutment/Screw Interface of Internal Connection Implant Systems (수종의 내측연결 임플랜트 시스템에서 고정체-지대주-나사계면의 적합에 관한 연구)

  • Shim, Deok-Bo;Kim, Hee-Jung;Oh, Sang-Ho;Chung, Chae-Heon
    • Journal of Dental Rehabilitation and Applied Science
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    • v.24 no.3
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    • pp.283-298
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    • 2008
  • The purpose of this study was to evaluate mechanical fit of fixture- abutment-screw interface in the internal connection implant systems. In this study, each two randomly selected internal implant fixture- abutment assemblys from Certain, Xive, Replace, Ankylos, SS II. were used. The implants were perpendicularly mounted in liquid unsaturated polyester by use of dental surveyor. Each abutment was connected to the implant with recommended torque value using a torque controller. All samples were cross-sectioned with grinder-polisher unit after embeded in liquid unsaturated polyester, and then fixture-abutment-screw interfaces of all samples by using optical microscope and scanning electron microscope were analyzed. Conclusively, although a little variation in machining accuracy and consistency was noted in the samples, important features of all internal connection systems were the deep, internal fixture-abutment connections which provides intimate contact with the implant walls to resist micromovement, resulting in a strong stable interface.