• 한국초전도학회:학술대회논문집
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• v.16
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• pp.58-58
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• 2006

• 한국초전도학회:학술대회논문집
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• 2007.07a
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• pp.42-42
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• 2007

• Progress in Superconductivity
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• v.9 no.1
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• pp.18-22
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• 2007

For interlayer tunneling spectroscopy using a small stack of $Bi_2Sr_2CaCu_2O_{8+x}$ (Bi-2212) intrinsic junctions in a high-bias range, large self-heating takes place due to the poor thermal conductivity of Bi-2212. In this study, we numerically estimate the self-heating around a Bi-2212 sample stack for I-V or dI/dV-V measurements. Our results show that the temperature discrepancy between the Bi-2212 sample stack and top Au electrodes due to bias-induced self-heating is small enough along the c-axis direction of Bi-2212. On the other hand, the lateral temperature discrepancy between the sample stack and the Bi-2212 on-chip thermometer stack can be as large as ${\sim}20\;K$ for the highest bias required to observe the pseudogap hump structure. We thus suggest a new in-situ ac thermometry, employing the Au current-bias electrode itself deposited on top of the sample stack as the resistive thermometer layer, which is supposed to allow safe temperature measurements for the interlayer tunneling spectroscopy.

• Progress in Superconductivity
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• v.7 no.1
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• pp.1-5
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• 2005

A pseudogap in the normal-state quasiparticle density of states of $high-T_c$ superconductors has been revealed in many different kinds of experiments. The existence of the pseudogap and the superconducting gap, and the correlation between them has attracted considerable attention because they are believed to be a key to understanding the mechanism of the $high-T_c$ superconductivity. The interlayer tunneling spectroscopy, excluding the surface-dependent effect, is one of the most accurate means to examine the electron spectral characteristics both in the superconducting and the normal states. In this study, a new constant-temperature intrinsic tunneling spectroscopic technique, excluding the overheating effect using the in-situ temperature monitoring combined with the digital proportional-integral-derivative control, is introduced. The implication on the $high-T_c$ superconductivity of the detailed temperature dependencies of the observed spectral weight in $Bi_{2}Sr_{2}CaCu_{2}O_{8+x}\;high-T_c$ material for overdoped and underdoped levels is discussed.

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.13-13
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• 2005

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.36-36
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• 2005

• 한국초전도학회:학술대회논문집
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• 2007.07a
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• pp.40-40
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• 2007

• Progress in Superconductivity
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• v.3 no.1
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• pp.41-44
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• 2001

We report the current transport properties of a normal metal/organic conductor/ superconductor tunnel junction as a novel high- $T_{c}$ superconducting three terminal device. The organic copper (II) phthalocyanine (Cu-Pc) layer was used far a polaronic quasiparticle (QP) injector. The injection of polaronic QP from the Cu-Pc interlayer into a superconductor $Bi_2$$Sr_2$$CaCu_2$ $O_{8+}$ $\delta$/(BSCCO) thin film generated a substantially larger nonequilibrium effect as compared to the normal QP injection current. The tunneling spectroscopy of an Au/cu-PC/BSCCO junction exhibited a zero bias conductance peak which may be due to Andreev reflection at a Cu-Pc/d-wave superconductor junction.n..

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.299-299
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• 2011

A dipolar interlayer can cause dramatic changes in the device characteristics of organic field-effect transistors (OFETs) or photovoltaics. A shift in the threshold voltage, for example, has been observed in an OFET where the organic semiconductor active layer is deposited on SiO2 modified with a dipolar monolayer. Dipolar molecules can similarly be used to change the current-voltage characteristics of organic-inorganic heterojunctions. We have conducted a series of experiments in which different molecular linkages are placed between a pentacene thin film and a silicon substrate. Interface modifications with different linkages allow us to predict and examine the nature of tunneling through pentacene on modified Si surfaces with different dipole moment. The molecular-scale structure and the tunneling properties of pentacene thin films on modified Si (001) with nitrobenzene and styrene were examined using scanning tunneling spectroscopy. Electronic interfaces using organic surface dipoles can be used to control the band lineups of a semiconductor at organic/inorganic interfaces. Our results can provide insights into the charge transport characteristics of organic thin films at electronic interfaces.