• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.873-877
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• 2007

In order to apply a complex multilayer chip LC filter, this study has estimated the interfacial reaction and coupling properties of dielectric materials $Pb(Fe_{1/2}Nb_{1/2})O_3$ and Ni-Zn-Cu ferrite materials through low-temperature co-sintering (LTCS). PFN powders were fabricated using double calcinated at $700^{\circ}C$ and then $850^{\circ}C$. While the perovskite phase rate was found to be 91 %, after heat treatment at $900^{\circ}C$ for 6h, the perovskite phase rate and density exhibited a value of 100 % and 7.46$g/cm^3$, respectively. The PFN/Ni-Zn-Cu ferrite, PFN/CUO (or $Pb_2Fe_2O_5$) and ferrite/CuO (or $Pb_2Fe_2O_5$) were mechanically coupled through interfacial reactions after the specimen was co-sintered at $900^{\circ}C$ for 6 h. No intermediate layer exists for the mutual coupling reaction. This result indicates the possibility of low-temperature co-sintering without any interfacial reaction layer for a multilayer chip LC filter.

• Journal of Korea Foundry Society
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• v.25 no.2
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• pp.80-87
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• 2005

The microstructure and mechanical property of the Ni and Ni-Cr porous metal reinforced AC4C matrix composites fabricated by squeeze casting were investigated. In this study Ni, Ni-Cr porous metals which are estimated to be easy to fabricate by squeeze casting are used as strengtheners for composite materials. As a matrix material, Al-7wt.%Si-0.3wt.%Mg(AC4C) has been used. In case of Ni/AC4C and Ni-Cr/AC4C composite, $750^{\circ}C$ melt temperature and minimum 25MPa squeezing pressure are needed to produce sound composite materials. The observation of interfacial reaction zone at various heat treatment condition shows that atsolutionizing temperature of above $520^{\circ}C$, the interfacial reaction zone increases proportionally with heat treatment time and the reaction products formed by interfacial reactions are mainly composed by $Al_{3}Ni$ and $Al_{3}Ni_{2}$ phases.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.06a
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• pp.95-95
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.18-18
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• 1995

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.11a
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• pp.61-61
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• 2004

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.215-217
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• 2006

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.40-42
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• 2005

• Journal of the Korean Ceramic Society
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• v.42 no.10 s.281
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• pp.665-671
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• 2005

LSGM is known to show very serious interfacial reaction with other unit cell components, such as electrode, electrode functional or buffering layers. Especially, the formation of very resistive LaSr$Ga_{3}$$O_{7}$ phase at the interface of an anode and an electrolyte is the most problematic one in LSGM-based SOFCs. In this study, we investigated the interfacial reactions in LSGM-based SOFCs under different unit cell configurations. According to the microstructural analysis on the interfacial layer between an electrolyte and its neighboring component, serious interfacial reaction zone was observed. From the electrical and electrochemical characterization of the cell, we found such an interfacial reaction zone not only increased the internal ohmic resistance but also decreased the OCV(Open Cell Voltage) of the unit cell, and thus consequently deteriorated the unit cell performance.

• Journal of the Korean Ceramic Society
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• v.42 no.7 s.278
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• pp.509-515
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• 2005

Interfacial reactions at LSGM electrolyte and NiO-GDC anode interfaces were thoroughly investigated with Environmental Scanning Electron Microscopy (ESEM-PHlLIPS XL-30) and Energy Dispersive X-ray (EDX-Link XL30). According to the analysis, serious reaction zone was observed at LSGM/NiO-GDC interface. It was found that the reaction layer was originated from the chemical reaction between NiO and LSGM. The reaction products were identified as La deficient form of LSGM based perovskite and Ni-La-O compounds such as LaSrGa$_{3}$O$_{7}$ and LaNiO$_{3}$ from the X-Ray Diffraction (XRD, Philips) analysis. According to the electrical characterization, interfacial layer was very electrically resistive which would be the cause of high internal resistance and low power generating characteristic of the unit cell.

• Journal of the Korean Electrochemical Society
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• v.4 no.1
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• pp.21-25
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• 2001

This article is concerned with the application of the fractal geometry to interfacial electrochemistry. Especially, we dealt with diffusion kinetics at the fractal electrodes. This article first explained the basic concepts of the Sacral geometry which has proven to be fruitful for modelling rough and irregular surfaces. Finally this article examined the electrochemical responses to various signals under diffusion-limited reactions during diffusion towards the fractal interfaces: The generalised forms, including the fractal dimension of the electrode surfaces, of Cottrell, Sand and Randles-Sevcik equations were theoretically derived and explained in chronoamperomety, chronopotentiometry and linear sweep/cyclic voltammetry, respectively.