• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.198-202
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• 2018

In this work, we have investigated the effect of a 30-min thermal anneal at $550^{\circ}C$ on the electrical characteristics of neutron-irradiated 4H-SiC MOSFETs. Thermal annealing can recover the on/off characteristics of neutron-irradiated 4H-SiC MOSFETs. After thermal annealing, the interface-trap density decreased and the effective mobility increased in terms of the on-characteristics. This finding could be due to the improvement of the interfacial state from thermal annealing and the reduction in Coulomb scattering due to the reduction in interface traps. Additionally, in terms of the off-characteristics, the thermal annealing resulted in the recovery of the breakdown voltage and leakage current. After the thermal annealing, the number of positive trapped charges at the MOSFET interface was decreased.

• Journal of The Korean Society of Agricultural Engineers
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• v.54 no.5
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• pp.25-34
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• 2012

It has been well known that concrete structures exposed to acid and sulfate environments such as sewer etc. show significant decrease in their durability due to chemical attack. Such deleterious acid and sulfate attacks lead to expansion and cracking in concrete, and thus, eventually result in damage to cement mortar by forming expansive hydration products due to the reaction between cement hydration products and acid and sulfate ions. In this study, the effect of fly ash and blast furnace slag on the bond performances of structural synthetic fiber in latex modified cement mortar under sulfate environments. Fly ash and blast furnace slag contents ranging from 0 % to 20 % are used in the mix proportions. The latex modified cement mortar specimens were immersed in fresh water, 8 % sodium sulfate ($Na_2SO_4$) solutions for 28 and 50 days, respectively. Pullout tests are conducted to measure the bond performance of structural synthetic fiber from latex modified cement mortar after sulfate environments exposure. Test results are found that the incorporation of fly ash and blast furnace slag can effectively enhance the PVA fiber-latex modified cement mortar interfacial bond properties (bond behavior, bond strength and interface toughness) after sulfate environments exposure. The microstructural observation confirms the findings on the interface bond mechanism drawn from the fiber pullout test results under sulfate environments.

• Journal of the Korea institute for structural maintenance and inspection
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• v.16 no.1
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• pp.55-63
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• 2012

This paper presents materials and processing technique to manufacture low viscous strain-hardening cementitious composite which is suitable for structures requiring low viscosity of materials. The micromechanics and fracture mechanics tools coupled with processing techniques were adopted to achieve low viscosity of composites as well as high tensile strain capacity. Optimal volume and length of fibers and interfacial properties between fibers and matrix for composites with tensile strength of 2~3MPa were determined on the basis of the micromechanical analysis and the steady-state cracking theory. Then six mixtures were determined and the experiment was carried out to evaluate the viscosity and uniaxial tensile performance of those. From the test results, it is verified that the strain-hardening cementitious composite with low viscosity suitable for grouting applications in fresh state as well as high ductility over 1.5% in hardened state can be feasible.

• Polymer(Korea)
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• v.24 no.3
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• pp.382-388
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• 2000

Polymer electrolyte films consisting of poly(vinylidenefluoride-hexafluoropropylene) (PVdF-HFP), LiClO$_3$ and a mixture of ethylene carbonate (EC) and ${\gamma}$-butyrolactone (GBL) were examined in order to obtain the best compromise between high ionic conductivity, homogeniety, dimensional and electrochemical stability. Measurements of ionic conductivity, differential scanning calorimetry and linear sweep voltammetry have been carried out for various compositions. The highest conductivity of 3.8$\times$10$^{-3}$ S$cm^{-1}$ / at 3$0^{\circ}C$ were obtained for a film of 30(PVdF-HFP)+7.8LiClO$_4$+62.2EC/GBL. From the DSC study, it has been found that the PVdF-HFP gels are stable up to 10$0^{\circ}C$, and the salt lowers the melting temperature of crystalline part of PVdF by interacting sensitively with polymer segments. When Lithium metal is in contact with the gel films, it tends to undergo corrosion and the reaction products accumulate resulting in the formation of a passive film on Li electrode. As the aging time progresses, the interfacial resistance increases continuously. Anodic stability is measured to extend up to about 4.5 V vs. Li.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.180-180
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• 2010

Thin film transistors (TFTs) based on oxide semiconductors have emerged as a promising technology, particularly for active-matrix TFT-based backplanes. Currently, an amorphous oxide semiconductor, such as InGaZnO, has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and $SnO_2$, remain possible candidates as the channel layer. Inparticular, ZnO-based TFTs have attracted considerable attention, because of their superior properties that include wide bandgap (3.37eV), transparency, and high field effect mobility when compared with conventional amorphous silicon and polycrystalline silicon TFTs. There are some technical challenges to overcome to achieve manufacturability of ZnO-based TFTs. One of the problems, the stability of ZnO-based TFTs, is as yet unsolved since ZnO-based TFTs usually contain defects in the ZnO channel layer and deep level defects in the channel/dielectric interface that cause problems in device operation. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. Additionally, ZnO TFTs using a high quality interface fabricated by a two step atomic layer deposition (ALD) process showed improvement in device performance In this study, we report the fabrication of high performance ZnO TFTs with a $Si_3N_4$ gate insulator treated using plasma. The interface treatment using electron cyclotron resonance (ECR) $O_2$ plasma improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.380-380
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• 2010

Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.2-252.2
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• 2013

ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.362-365
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• 2005

Currently Chemical Mechanical Planarization (CMP) has become an essential step in the overall semiconductor wafer fabrication technology. Especially the CMP pad conditioner, one of the diamond tools, is required to have strong diamond retention. Strong cohesion between diamond grits and metal matrix prevents macro scratch on the wafer. If diamond retention is weak, the diamond will be pulled out of metal matrix. The pulled diamond grits are causative of macro scratch on wafer during CMP process. Firstly, some results will be reported of cohesion between diamond grits and metal matrix on the diamond tools prepared by three different manufacturing methods. A measuring instrument with sharp cemented carbide connected with a push-pull gauge was manufactured to measure the cohesion between diamond grits and metal matrix. The retention force of brazed diamond tool was stronger than the others. The retention force was also increased in proportion to the contact area of diamond grits and metal matrix. The brazed diamond tool has a strong chemical combination of the interlayer composed of chrome in metal matrix and carbon which enhance the interfacial cohesion strength between diamond grits and metal matrix. Secondly, we measured real-time data of the coefficient of friction and the pad wear rate by using CMP tester (CETR, CP-4). CMP pad conditioner samples were manufactured by brazed, electro-plated and sintered methods. The coefficient of friction and the pad wear rate were shown differently according to the arranged diamond patterns. Consequently, the coefficient of friction is increased according as the space between diamonds is increased or the concentration of diamonds is decreased. The pad wear rate is increased according as the degree of diamond protrusion is increased.

• Korean Journal of Metals and Materials
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• v.47 no.8
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• pp.500-507
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• 2009

Pb-free solder has recently been used in electronics in efforts to meet environmental regulations, and a number of Pb-free solder alloy choices beyond the near-eutectic SnAgCu solder are now available. With increased demand for thin and portable electronics, the high cost of alloys containing significant amounts of silver and their poor mechanical shock performance have spurred the development of low Ag SnAgCu solder, which provides improved mechanical performance at a reasonable cost. Although low Ag SnAgCu solder exhibits significantly higher fracture resistance under high-strain rates, little thermal fatigue data exist for this solder. Therefore, it is necessary to investigate thermal fatigue reliability of low Ag SnAgCu solder under variation of thermal stress in order to allow its implementation in electronic products with high reliability requirements. In this study, the reliability of Sn0.3Ag0.7Cu(SAC0307), a low Ag solder alloy, is discussed and compared with that of Sn3Ag0.5Cu(SAC305). Three sample types and six samples size are evaluated. Mechanical properties and microstructure of the solder joint are investigated under thermal shock cycles. It was observed that the mechanical strength of SAC0307 dropped slightly with thermal cycling relative to that of SAC305. This reveals that the failure mode of SAC0307 is different from that SAC305 under this critical condition.

• Journal of the Korean Magnetics Society
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• v.21 no.6
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• pp.214-218
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• 2011

In this study, we have systematically investigated the effect of sputtering conditions on the microstructural properties of Ag/CoFeB thin film on MgO substrate. It was found that the crystallinity and surface roughness of the Ag film strongly depends on the Ar sputtering pressure and sputtering power. Epitaxial growth of Ag(100) film on MgO(100) substrate was achieved under the sputtering conditions of high sputtering power and elevated temperature. XRR (X-ray reflectivity) and high-resolution TEM (transmission electron microscopy) measurements also revealed the interfacial roughening in the Ag/CoFeB interface due to the island structure formation and intermixing between Ag and CoFeB.