• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.299-299
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• 2016

SiC는 넓은 에너지갭 (Eg=~3.4 eV)을 갖는 반도체로써, 고전압, 고온에서 동작이 가능하여 기존의 Si기반의 파워디바이스를 대체하기 위한 물질로 많은 연구가 이루어지고 있다. 파워 디바이스의 성능 향상을 위해서는 기판과 절연체 사이의 계면에 생성되는 계면 결함을 감소시켜야 한다. 따라서 본 연구에서는 SiC 기판에 high-k 물질인 HfO2를 증착하여 HfO2/SiC 계면에 유도된 결함을 분석하고 이를 감소시킬 수 있는 방법에 대한 연구를 수행하였다. HfO2 박막은 atomic-layer-deposition (ALD) 방법을 이용하여 SiC 기판 위에 $200^{\circ}C$에서 증착하였다. HfO2 박막 증착 후 NH3 분위기에서 rapid thermal annealing 방법을 이용하여 $600^{\circ}C$에서 1분 동안 열처리 진행하였다. Current-voltage (I-V) 측정을 통해 열처리 전 HfO2/SiC의 절연파괴 전압이 약 8.3 V 임을 확인하였다. NH3 열처리 후 HfO2/SiC의 절연파괴 전압이 10 V로 증가하였으며 누설 전류가 크게 감소하는 것을 확인하였다. 또한 capacitance-voltage (C-V) 측정을 통해 열처리 후 flat band voltage가 negative 방향에서 positive 방향으로 이동함을 확인하였고, 이를 통해 NH3 열처리 방법이 HfO2/SiC 계면에 존재하는 결함을 감소시킬 수 있음을 확인하였다. 전자 구조상의 conduction band edge에 존재하는 결함 준위를 분석하기 위해 x-ray absorption spectroscopy (XAS) 분석을 실시하였고, 열처리 전 HfO2/SiC 계면에 많은 결함 준위가 존재함을 확인하였으며, x-ray photoelectron spectroscopy (XPS) 분석을 통해 이 결함 준위가 oxygen deficiency state과 관련됨을 알 수 있었다. NH3 열처리 후 결과와 비교해보면, oxygen deficiency state가 감소함을 확인하였으며 이로 인해 conduction band edge에 존재하는 결함 준위가 감소함을 알 수 있었다. 따라서, NH3 열처리 방법을 이용하여 HfO2/SiC 계면에 존재하는 결함을 감소시킬 수 있으며, HfO2/SiC의 물리적, 전기적 특성을 향상시킬 수 있다는 결과를 도출하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.51.2-51.2
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• 2015

Understanding interfacial phenomena has been one of the main research issues not only in semiconductors but only in life sciences. I have been trying to meet the atomic scale surface and interface analysis challenges from semiconductor industries and furthermore to extend the application scope to biomedical areas. Optical imaing has been most widely and successfully used for biomedical imaging but complementary ion beam imaging techniques based on mass spectrometry and ion scattering can provide more detailed molecular specific and nanoscale information In this presentation, I will review the 27 years history of medium energy ion scattering (MEIS) development at KRISS and DGIST for nanoanalysis. A electrostatic MEIS system constructed at KRISS after the FOM, Netherland design had been successfully applied for the gate oxide analysis and quantitative surface analysis. Recenlty, we developed time-of-flight (TOF) MEIS system, for the first time in the world. With TOF-MEIS, we reported quantitative compositional profiling with single atomic layer resolution for 0.5~3 nm CdSe/ZnS conjugated QDs and ultra shallow junctions and FINFET's of As implanted Si. With this new TOF-MEIS nano analysis technique, details of nano-structured materials could be measured quantitatively. Progresses in TOF-MEIS analysis in various nano & bio technology will be discussed. For last 10 years, I have been trying to develop multimodal nanobio imaging techniques for cardiovascular and brain tissues. Firstly, in atherosclerotic plaque imaging, using, coherent anti-stokes raman scattering (CARS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) multimodal analysis showed that increased cholesterol palmitate may contribute to the formation of a necrotic core by increasing cell death. Secondly, surface plasmon resonance imaging ellipsometry (SPRIE) was developed for cell biointerface imaging of cell adhesion, migration, and infiltration dynamics for HUVEC, CASMC, and T cells. Thirdly, we developed an ambient mass spectrometric imaging system for live cells and tissues. Preliminary results on mouse brain hippocampus and hypotahlamus will be presented. In conclusions, multimodal optical and mass spectrometric imaging privides overall structural and morphological information with complementary molecular specific information, which can be a useful methodology for biomedical studies. Future challenges in optical and mass spectrometric imaging for new biomedical applications will be discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.225-228
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• 2002

Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.158-158
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• 1999

The post ion implantation has been applied to modify early-grown BN layer and improve the adhesion of the BN films. The effect of ion implantation doses on microstructure and interlayer was investigated by FTIR and HRTEM. And the hardness and delamination life time of N+-implanted BN films were measured. With increasing the ion dose up to 5.0×1015atoms/㎠, the change of IR spectrum is observed. At 5.0×1016atoms/㎠, a drastic transition of cubic phase into hexagonal phase is detected. The change of microstructure of early-grown layers by ion implantation is confirmed using HRTEM. Both microhardness and delamination life time of BN films increase with ion dose. The modification model of early-grown BN layers is briefly discussed based on the displacement per atom and excess boron in the BN film induced by ion irradiation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.832-835
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• 2001

We report the structural and electrical properties of hafnium oxide (HfO$_2$) films with tungsten silicide (WSi$_2$) metal gate. In this study, HfO$_2$thin films were fabricated by oxidation of sputtered Hf metal films on Si, and WSi$_2$was deposited directly on HfO$_2$by LPCVD. The hysteresis windows in C-V curves of the WSi$_2$HfO$_2$/Si MOS capacitors were negligible (<20 mV), and had no dependence on frequency from 10 kHz to 1 MHz and bias ramp rate from 10 mV to 1 V. In addition, leakage current was very low in the range of 10$^{-9}$ ~10$^{-10}$ A to ~ 1 V, which was due to the formation of interfacial hafnium silicate layer between HfO$_2$and Si. After PMA (post metallization annealing) of the WSi$_2$/HfO$_2$/Si MOS capacitors at 500 $^{\circ}C$ EOT (equivalent oxide thickness) was reduced from 26 to 22 $\AA$ and the leakage current was reduced by approximately one order as compared to that measured before annealing. These results indicate that the effect of fluorine diffusion is negligible and annealing minimizes the etching damage.

• Nuclear Engineering and Technology
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• v.24 no.1
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• pp.40-51
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• 1992

One of the important irradiation performance characteristics of the silicide dispersion fuel element in research reactors is the diameteral increase resulting from fuel swelling. This paper, will attempt to develop a physical model for the fuel swelling, DFSWELL, by analyzing the basic irradiation behaviours and some experimental evidences. From the experimental evidences, it was shown that the volume changes in irradiated U$_3$Si-Al were strongly dependent on temperature and fission rate. The quantitative-amount of swelling for silicide fuel is estimated by considering temperature, fission rate, solid fission product build-up and gas bubble behavior. The swelling for the silicide fuel is comprised of three major components : i ) a volume change due to the formation of an interfacial layer between the fuel particle and matrix. ii ) a volume change due to the accumulation of gas bubble nucleation iii ) a volume change due to the accumulation of solid fission products The DFSWELL model which takes into account the above three major physical components predicts well the absolute magnitude of silicide fuel swelling in accordance with the power histories in comparison with the experimental data.

• Journal of the Korean Wood Science and Technology
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• v.44 no.3
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• pp.315-322
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• 2016

Block-glued glulam is a structural material that can be used as a construction member of a large-section wooden building, which is produced by edgewise bonding of two or more glulam beam elements. The edgewise bonding performance of the block-glued glulam was examined through delamination test and block shear strength test. According to the test results, the block-glued glulam that was manufactured with 1.5 MPa of compressive pressure after applying $500g/m^2$ of Resorcinol adhesive showed the best edgewise bonding performance. The block-glued glulam produced in a good edgewise bonding condition was compared with a control glulam with the same section modulus for bending strength performance. The modulus of elasticity (MOE) in bending was similar to that of the control glulam. The modulus of rupture (MOR) of the block-glued glulam was higher by 27% than that of the control glulam. No interfacial failure or cohesive failure were observed in the edgewise bonding layer.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.71-77
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• 2007

In this study, the mechanical and electrical properties of three different ball grid array (BGA) solder joints, consisting of Sn-37Pb, Sn-3.5Ag and Sn-3.5Ag-0.75Cu (all wt.%), with organic solderability preservative (OSP)-finished Cu pads were investigated as a function of reflow number. Based on scanning electron microscopy (SEM) analysis results, a continuous $Cu_6Sn5$, intermetallic compound (IMC) layer was formed at the solder/substrate interface, which grew with increasing reflow number. The ball shear testing results showed that the shear force peaked after 3 reflows (in case of Sn-Ag solder, 4 reflows), and then decreased with increasing reflow number. The electrical property of the joint gradually decreased with increasing reflow number.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1429-1436
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• 1994

We have prepared Ba0.5Sr0.5TiO3 thin films on Si substrate without buffer layer. Deposition was carried out by off-axis rf magnetron sputtering method using Ba0.5Sr0.5TiO3 stoichiometric target. The substrate temperature was changed from 40$0^{\circ}C$ to $700^{\circ}C$ during deposition. As the substrate temperature increased, relative intensity of (110) peak increased up to $600^{\circ}C$, however preferred orientation changed from (110) to (h00) beyond $650^{\circ}C$ of substrate temperature. Deposited films showed microstructures with fine grains whose diameters are less than 100 nm, and columnar structure was observed in the cross-sectional SEM micrograph. AES depth profile showed no significant diffusion at the interfacial reaction area. The effective dielectric constant of films showed maximum value at $600^{\circ}C$, and the leakage current increased with increasing substrate temperature, which may be ascribed to the crystallization of amorphous phases at grain boundary.