• 제목/요약/키워드: Interfacial layer

검색결과 676건 처리시간 0.035초

계면중합 반응과정 고찰 및 박막의 두께 측정 (Interfacial Polymerization Formation and Thickness of Thin Film)

  • 박종원;민병렬
    • 한국막학회:학술대회논문집
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    • 한국막학회 1997년도 추계 총회 및 학술발표회
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    • pp.87-89
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    • 1997
  • 1. 서론 : 막을 이용한 분리기술의 실용화의 최대 과제는 선택성이 높고 용매의 투과용매의 투과속도가 높은 막재질 및 처리 면적이 큰 막의 개발이 필요하게 되었다. 이러한 성능 개발은 1960년대 cellulose acetate 계통의 막개발 이후 1980년대 지지층 고분자위에 다른 고분자 물질을 도포한 복합막(thin film composite layer)이 개발되어 막의 성능을 급격히 발전시켰다. 그 중에서 초박막화(ultrathin membrane)는 분리막에 의한 분리공정의 최대 결점인 낮은 투과량의 개선을 꾀할 수 있다는 장점 때문에 다양한 시도가 이루어지고 있다. 이러한 박막 제조 방법에는 박층분산법, 침지코팅법, 기상증착법, 계면중합법이 있으나, 섞이지 않는 두 계면 사이에서 고분자를 형성시키는 계면중합법은 수용상에 함침된 지지막위에 유기상을 계변에서 중합시켜 박막을 얻는 기술이다. 중합과정에서 일어나는 계면의 형성과정에 대한 연구는 미흡하기에 이에 본 연구는 시간에 따른 계면중합 반응 형성과정을 고찰하는 방법을 소개하고, 형성된 박막의 아론적, 실험적 두께 측정을 비교하였다.

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열처리 조건이 PECVD 방식으로 증착된 $Ta_2$$O_5$ 박막 특성에 미치는 영향 (Effect of Annealing Conditions on $Ta_2$$O_5$ Thin Films Deposited By PECVD System)

  • 백용구;은용석;박영진;김종철;최수한
    • 전자공학회논문지A
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    • 제30A권8호
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    • pp.34-41
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    • 1993
  • Effect of high temperature annealing conditions on Ta$_{2}O_{5}$ thin films was investigated. Ta$_{2}O_{5}$ thin films were deposited on P-type silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using tantalum ethylate. Ta(C$_{2}H_{5}O)_{5}$, and nitrous oxide. N$_{2}$O. The microstructure changed from amorphous to polycrystalline above 700.deg. C annealing temperature. The refractive index, dielectric onstant and leakage current of the film increased as annealing temperature increased. However, annealing in oxygen ambient reduced leakage currents and dielectric constant due to the formation of interfacial SiO$_{2}$ layer. By optimizing annealing temperature and ambient, leakage current lower than 10$^{-8}$ A/cm$^{2}$ and maximum capacitance of 9 fF/${\mu}m^{2}$ could be obtained.

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기체분리용 세라믹 복합분리막의 개발: I. 극미세 입자 실리카 졸의 코팅 특성 (Development of Ceramic Composite Membranes for Gas Separation: I. Coating Characteristics of Nanoparticulate SiO2 Sols)

  • 현상훈;;윤성필
    • 한국세라믹학회지
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    • 제29권6호
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    • pp.496-504
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    • 1992
  • Alumina tubes suitable for the support of gas separation membranes have been prepared by the slipcasting technique. These supports have the average pore size of 0.1 ${\mu}{\textrm}{m}$ within the narrow distribution. The sol-gel dipcoating process of nanoparticulate sols is very sensitive to microstructure of the support, and the coating on the inside surface of the tube is found to be more successful than on the outside surface. Nanoparticulate silica sols (0.82 mol/ι) have been synthesized by an interfacial hydrolysis reaction between TEOS and high alkaline water. When coating an alumina tube with these sols, the minimum limits of the particle size and the aging time required for forming the coated gel layer at the given pH are provided. It is optimum to coat the support with less concentrated sols stabilized through aging for the appropriate time (more than 22 days) at the lower pH (pH 2.0) for producing a reproducible crack free thin film coating in composite membranes.

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Improving performance of organic thin film transistor using an injection layer

  • Park, K.M.;Lee, C.H.;Hwang, D.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1413-1415
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    • 2005
  • The OTFT performance depends strongly on the interfacial properties between an organic semiconductor and ${\alpha}$ metal electrode. The contact resistance is critical to the current flow in the device. The contact resistance arises mainly from the Schottky barrier formation due to the work function difference between the semiconductor and electrodes. We doped pentacene/source-drain interfaces with $F_4TCNQ$ (2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane), resulting in p-doped region at the SD contacts, in order to solve this problem. We found that the mobility increased and the threshold voltage decreased.

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Titanium thin film modified silica substrate to enhance the bonding properties of nanosilver

  • Lin, H.M.;Liu, Y.T.;Lin, K.N.;Chang, W.S.;Wu, C.Y.;Liu, P.Y.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1733-1736
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    • 2006
  • Nanosilver has intrinsic problem to adhesion on the surface of silica. To improve interfacial properties between nanosilver and silica substrate, a thin titanium film is introduced in this study. The titaniumcoated silica substrates are prepared by sputter technique. The commercial silver nanopaste with size around 3-7nm is used in this study. The results indicate thin layer of titanium can improve the bonding properties of nanosilver and expect to be used in fabrication of TFT display panel.

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$\gamma$-알루미나/KCl 수용액의 전기 이중층에서 계면 물성 (Interfacial Properties of $\gamma-Alumina/KCI^{(ag)}$ Electrical Double Layer)

  • 홍영호;함영민;장윤호
    • 한국세라믹학회지
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    • 제31권6호
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    • pp.678-684
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    • 1994
  • The surface of alumina is capable of acquiring a change when it is in an aqueous solution. This surface change will have a strong influence on the surrounding ions, particularly those of opposite change known as the counter ions. A site-binding model of the {{{{ gamma }}-alumina/KCl(aq) interface was used to calculated theoretical surface ionization constants and P.Z.C.(Point of zero change) of {{{{ gamma }}-alumina. This paper was carried out to investigate the effect of calcination temperature on the acidic and electrical properties of pure {{{{ gamma }}-alumina prepared by the precipitation method from the Al(NO3)3.9H2O and NH4OH. From the experimental data it was shown that {{{{ gamma }}-alumina have a mainly Br nsted acid site. However, the acidity of {{{{ gamma }}-alumina decreased with increasing calcination temperature at strength Ho +9.3. The surface charge density of {{{{ gamma }}-alumina was increased with electrolyte ionic strength and calcination temperature.

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중간재가 질화규소/스테인레스 스틸 접합체의 굽힘강도에 미치는 영향 (Effect of Interlayers on the Bending Strength of Silicon Nitride/Staineless Steel Joints)

  • 박상환;최영화;김태우
    • 한국세라믹학회지
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    • 제33권3호
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    • pp.251-258
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    • 1996
  • The reactions between an active metal brazing alloy and interlayers together with the effects of interlayer type on the interfacial microstructure change were investiaged for silicon nitride/stainless steel joint. The bending strengths were measured for joints with Mo, Cu, Ni interlayer type of different thicknesses. It was found that the interlayer with a low yield strength value is effective to improve the bending strength of the Si3N4/stainless steel joint. The maximum joint strength obtained at room temperature for a laminated Cu/Mo interlayer was about 460 MPa. The combined use of Mo and thin Cu layer was found to be effective in enhancing the bending strength for the Si3N4/S.S.316 joint.

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Sn-Ag-Bi/Cu 솔더 조인트의 aging시 금속간화합물 성장 거동 (Growth Behavior of Intermetallic Compounds in Sn-Ag-Bi/Cu Solder Joints during Aging)

  • 한상욱;박창용;허주열
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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    • pp.133-137
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    • 2003
  • The effect of Bi additions to the eutectic Sn-3.5Ag solder alloy on the growth kinetics of the intermetallic compound (IMC) layers during solid-state aging of Sn-Ag-Bi/Cu solder joints has been Investigated. The Bi additions enhanced the growth rate of the total IMC layer comprising of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers. This enhanced IMC growth rate was primarily due to the rapid increase In the growth rate of $Cu_6Sn_5$ sublayer. The growth rate of $Cu_3Sn$ sublayers was little influenced and appeared to be retarded by the Bi additions. The observed growth behavior of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers could be understood if the interfacial reaction barrier at the $Cu_6Sn_5/solder$ interface were reduced by the segregation of Bi at the interface.

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The Effects of Oxygen Plasma and Cross-link Process on Quantum-dot Light Emitting Diodes

  • Cho, Nam-Kwang;Kang, Seong Jun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.215-215
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    • 2014
  • Red color light emitting diodes (LEDs) were fabricated using CdSe/CdZnS quantum dots (QDs). During the device fabrication process, oxygen plasma treatment on the ITO surface was performed to improve the interfacial contact between ITO anode and the hole injection layer. CdSe/CdZnS quantum dots were cross-linked to remove their surrounded organic surfactants. The device shows red emission at 622 nm, which is consistent with the dimension of the QDs (band gap=1.99 eV). The luminance shows 6026% improvement compared with that of LEDs fabricated without oxygen plasma treatment and quantum dots cross-linking process. This approach would be useful for the fabrication of high-performance QLEDs with ITO electrode and PEDOT:PSS hole injection layers.

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Solution-processed Organic Trilayer Solar Cells Incorporating Conjugated Polyelectrolytes

  • Cha, Myoung Joo;Walker, Bright;Seo, Jung Hwa
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.192.1-192.1
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    • 2014
  • We report solution-processed organic trilayer solar cells consisting of poly (3-hexylthiophene) (P3HT), a conjugated polyelectrolyte (CPE) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), wherein the effect CPE layer thickness on device properties was investigated. The current-voltage characteristics under illumination and dark as well as photoluminescence were characterized using various concentrations (0.02, 0.1, and 0.3wt%) of to deposit the CPE interlayer between the donor and acceptor layers. We also investigated the influence of molecular dipole moments in the trilayer solar cells by external stimuli. These results provide an experimental approach for investigating the influence of interfacial dipoles on solar cell parameters when placed between the donor and acceptor and allow us to obtaining fundamental information about the donor/acceptor interface in organic solar cells.

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