• Title/Summary/Keyword: Interfacial Roughness

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Magnetoresistance of ${[Co/Fe/Cu]}_20$ Multilayers (${[Co/Fe/Cu]}_20$ 다층박막의 자기저항 특성)

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    • Journal of the Korean Magnetics Society
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    • v.6 no.6
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    • pp.411-416
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    • 1996
  • We have studied the effect of a spin-dependence interface electron scattering on the giant magnetoresistance by adding a Fe magnetic material to the Co/Cu interfaces. The $Fe(50\;{\AA})/[Co(17\;{\AA})/Fe(t\;{\AA})/Cu(24\;{\AA})]_{20}$ multilayers are deposited on the Corning glass 2948 and 7059 substrates in a dc magnetron sputtering system. The magnetoresistance ratio is 22 % in the only Co/Cu multilayer, while it is increased to 26 % with inserted ultra thin Fe interface layer and reduced with increasing thickness of the Fe interface layer. It was investigated to the dependence of the magnetoresistance behaviors on annealing temperature. The magnetic properties of the multilayers were measured by vibrating sample magnetometer. Also, the structures and the surface roughness of samples were characterized by X-ray diffraction and atomic force microscope, respectively. The magnetoresistance ratio was increased to annealing temperature $300^{\circ}C$, but reduced at the temperature higher than $300^{\circ}C$ due to the interfacial diffuse.

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Study on the Direct Bonding of Silicon Wafers by Cleaning in $HNO_3:H_2_O2:HF$ (HNO$_3:H_2O_2$ : HF 세척법을 이용한 실리콘 직접 접합 기술에 관한 연구)

  • Joo, C.M.;Choi, W.B.;Kim, Y.S.;Kim, D.N.;Lee, J.S.;Sung, M.Y.
    • Proceedings of the KIEE Conference
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    • 1999.07g
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    • pp.3310-3312
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    • 1999
  • We have studied the method of silicon direct bonding using the mixture of $HNO_$, $H_2O_2$, and HF chemicals called the controlled slight etch (CSE) solution for the effective wafer cleaning. CSE, two combinations of oxidizing and etching agents, have been used to clean the silicon surfaces prior to wafer bonding. Two wafers of silicon and silicon dioxide were contacted each other at room temperature and postannealed at $300{\sim}1100^{\circ}C$ in $N_2$ ambient for 2.5 h. We have cleaned silicon wafers with the various HF concentrations and characterized the parameters with regard to surface roughness, chemical nature, chemical oxide thickness, and bonding energy. It was observed that the chemical oxide thickness on silicon wafer decreased with increasing HF concentrations. The initial interfacial energy and final energy postannealed at $1100^{\circ}C$ for 2.5h measured by the crack propagation method was 122 $mJ/m^2$ and 2.96 $mJ/m^2$, respectively.

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Surface alterations following instrumentation with a nylon or metal brush evaluated with confocal microscopy

  • Kim, Young-Sung;Park, Jun-Beom;Ko, Youngkyung
    • Journal of Periodontal and Implant Science
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    • v.49 no.5
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    • pp.310-318
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    • 2019
  • Purpose: Surface alterations of titanium discs following instrumentation with either a nylon brush or a metal brush were evaluated. Methods: A total of 27 titanium discs with 3 surface types (9 discs for each type), including machined (M) surfaces, sandblasted and acid-etched (SA) surfaces, and surfaces treated by resorbable blast media (RBM), were used. Three discs were instrumented with a nylon brush, another 3 discs were instrumented with a metal brush, and the remaining 3 discs were used as controls for each surface type. Surface properties including the arithmetic mean value of a linear profile (Ra), maximum height of a linear profile (Rz), skewness of the assessed linear profile (Rsk), arithmetic mean height of a surface (Sa), maximum height of a surface (Sz), developed interfacial area ratio (Sdr), skewness of a surface profile (Ssk), and kurtosis of a surface profile (Sku) were measured using confocal microscopy. Results: Instrumentation with the nylon brush increased the Ra, Sa, and Sdr of the M surfaces. On the SA surfaces, Ra, Sa and Sdr decreased after nylon brush use. Meanwhile, the roughness of the RBM surface was not affected by the nylon brush. The use of the metal brush also increased the Ra, Sa, and Sdr of the M surface; however, the increase in Sdr was not statistically significant (P=0.119). The decreases in the Rz, Sz, Ra, Sa, and Sdr of the SA surfaces were remarkable. On the RBM surfaces, the use of the metal brush did not cause changes in Ra and Sa, whereas Rz, Sz, and Sdr were reduced. Conclusions: Titanium surfaces were altered when instrumented either with a nylon brush or a metal brush. Hence, it is recommended that nylon or metal brushes be used with caution in order to avoid damaging the implant fixture/abutment surface.

Effects of Sputtering Conditions on the Growth of Ag/CoFeB Layer on MgO(100) Substrate (MgO(100) 기판 위에 증착된 Ag/CoFeB 박막의 스퍼터링 조건에 따른 미세성장구조 변화 연구)

  • Jeon, Bo-Geon;Jeong, Jong-Ryul;Takahashi, Hirokazu;Tsunoda, Masakiyo;Takahashi, Migaku
    • Journal of the Korean Magnetics Society
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    • v.21 no.6
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    • pp.214-218
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    • 2011
  • In this study, we have systematically investigated the effect of sputtering conditions on the microstructural properties of Ag/CoFeB thin film on MgO substrate. It was found that the crystallinity and surface roughness of the Ag film strongly depends on the Ar sputtering pressure and sputtering power. Epitaxial growth of Ag(100) film on MgO(100) substrate was achieved under the sputtering conditions of high sputtering power and elevated temperature. XRR (X-ray reflectivity) and high-resolution TEM (transmission electron microscopy) measurements also revealed the interfacial roughening in the Ag/CoFeB interface due to the island structure formation and intermixing between Ag and CoFeB.

H2 Plasma Pre-treatment for Low Temperature Cu-Cu Bonding (수소 플라즈마 처리를 이용한 구리-구리 저온 본딩)

  • Choi, Donghoon;Han, Seungeun;Chu, Hyeok-Jin;Kim, Injoo;Kim, Sungdong
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.4
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    • pp.109-114
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    • 2021
  • We investigated the effects of atmospheric hydrogen plasma treatment on Cu-Cu direct bonding. Hydrogen plasma was effective in reducing the surface oxide layer of Cu thin film, which was confirmed by GIXRD analysis. It was observed that larger plasma input power and longer treatment time were effective in terms of reduction and surface roughness. The interfacial adhesion energy was measured by DCB test and it was observed to decrease as the bonding temperature decreased, resulting in bonding failure at bonding temperature of 200℃. In case of wet treatment, strong Cu-Cu bonding was observed above bonding temperature of 250℃.

Fabrication of Reverse Osmosis Membrane with Enhanced Boron Rejection Using Surface Modification (표면개질을 이용하여 붕소 제거율이 향상된 역삼투막의 제조)

  • Lee, Deok-Ro;Kim, Jong Hak;Kwon, Sei;Lee, Hye-Jin;Kim, In-Chul
    • Membrane Journal
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    • v.28 no.2
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    • pp.96-104
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    • 2018
  • With the rapid increase in seawater desalination, the importance of boron rejection is rising. This study was conducted to investigate the effect of hydrophilic compounds on surface modification to maximize water flux and increase boron rejection. First, polyamide active layer was fabricated by interfacial polymerization of polysulfone ultrafiltration membrane with M-phenylenediamine (MPD) and trimesoyl chloride (TMC) to obtain Control polyamide membrane. Next, D-gluconic acid (DGCA) and D-gluconic acid sodium salt (DGCA-Na) were synthesized with glutaraldehyde (GA) and hydrochloric acid (HCl) by modifying the surface of Control polyamide membrane. XPS analysis was carried out for the surface analysis of the synthesized membrane, and it was confirmed that the reaction of surface with DGCA and DGCA-Na compounds was performed. Also, FE-SEM and AFM analysis were performed for morphology measurement, and polyamide active layer formation and surface roughness were confirmed. In the case of water flux, the membrane fabricated by the surface modification had a value of 10 GFD or less. However, the boron rejection of the membranes synthesized with DGCA and DGCA-Na compounds were 94.38% and 94.64%, respectively, which were 12.03 %p and 12.29 %p larger than the Control polyamide membrane, respectively.