• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.3
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• pp.1-11
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• 2022

In this study, an electric resistance dual-spot welding process using a copper electrode inserted in a heating electrode is suggested for the spot welding of AZ31 magnesium sheets. This spot-welding process involves two heating methods for welding at the interfacial zone between the magnesium sheets, one of which is the heating method by thermal conduction from the heating electrode heated by the welding current induced to the steel electrode, and the other heating method uses the electric resistance between the contacted surfaces of the two sheets by the welding current induced to the copper electrode. This welding process includes the welding variables, such as the current induced in the heating electrode and the copper electrode, and the outer diameters of the heating electrode. This is because the heat conducted from the heating electrode can be maintained at a higher temperature in the welding zone, which has a slow cooling effect on the nugget of the melted metal after the welding step. The pressure exerted during the pressing of the magnesium sheets by the heating electrode can be increased around the nugget zone at the spot-welding zone. Thus, it not only reduces the warping effect of the elastoplastic deformation of sheets, but also the corona bond can make it less prone to cracking at the welded zone, thereby reducing the number of nuggets expelled out of the corona bond. In conclusion, it was known that an electric resistance dual spot welding process using the copper electrode inserted in the heating electrode can improve the welding properties in the electric resistance spot welding process of AZ31 magnesium sheets.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.28-32
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• 2023

Recently, the use of stable lithium nanostructures as substrates and electrodes for secondary batteries can be a fundamental alternative to the development of next-generation system semiconductor devices. However, lithium structures pose safety concerns by severely limiting battery life due to the growth of Li dendrites during rapid charge/discharge cycles. Also, enabling long cyclability of high-voltage oxide cathodes is a persistent challenge for all-solid-state batteries, largely because of their poor interfacial stabilities against oxide solid electrolytes. For the development of next-generation system semiconductor devices, solid electrolyte nanostructures, which are used in high-density micro-energy storage devices and avoid the instability of liquid electrolytes, can be promising alternatives for next-generation batteries. Nevertheless, poor lithium ion conductivity and structural defects at room temperature have been pointed out as limitations. In this study, a low-dimensional Graphene Oxide (GO) structure was applied to demonstrate stable operation characteristics based on Li+ ion conductivity and excellent electrochemical performance. The low-dimensional structure of GO-based solid electrolytes can provide an important strategy for stable scalable solid-state power system semiconductor applications at room temperature. The device using uncoated bare NCA delivers a low capacity of 89 mA h g-1, while the cell using GO-coated NCA delivers a high capacity of 158 mA h g−1 and a low polarization. A full Li GO-based device was fabricated to demonstrate the practicality of the modified Li structure using the Li-GO heterointerface. This study promises that the lowdimensional structure of Li-GO can be an effective approach for the stabilization of solid-state power system semiconductor architectures.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.41-47
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• 2022

Ag sintering technologies have received great attention as it was applied to the inverter of Tesla's electric vehicle Model III. Ag sinter bonding technology has advantages in heat dissipation design as well as high-temperature stability due to the intrinsic properties of the material, so it is useful for practical use of SiC and GaN devices. This study was carried out to understand the sinter joining temperature effect on the robust Ag sintered joints in air without pressure within 10 min. Electroplated Ag finished Cu dies (3 mm × 3 mm × 2 mm) and substrates (10 mm × 10 mm × 2 mm) were introduced, respectively, and nano Ag paste was applied as a bonding material. The sinter joining process was performed without pressure in air with the bonding temperature as a variable of 175 ℃, 200 ℃, 225 ℃, and 250 ℃. As results, the bonding temperature of 175 ℃ caused 13.21 MPa of die shear strength, and when the bonding temperature was raised to 200 ℃, the bonding strength increased by 157% to 33.99 MPa. When the bonding temperature was increased to 225 ℃, the bonding strength of 46.54 MPa increased by about 37% compared to that of 200 ℃, and even at a bonding temperature of 250 ℃, the bonding strength exceeded 50 MPa. The bonding strength of Ag sinter joints was directly influenced by changes in the necking thickness and interfacial connection ratio. In addition, developments in the morphologies of the joint interface and porous structure have a significant effect on displacement. This study is systematically discussed on the relationship between processing temperatures and bonding strength of Ag sinter joints.

• Composites Research
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• v.37 no.3
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• pp.190-196
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• 2024

The bipolar plate is a crucial element of the vanadium redox flow battery (VRFB) as it serves as both the electrical conduit and the structural support for the cell within the VRFB stack. Although, the graphite material is primarily used for the bipolar plate due to its excellent electrical conductivity, a significant limitation of performance of the VRFB is present due to high interfacial contact resistance (ICR) arises between the electrode and bipolar plate in the cell stack. This study aims to develop an integrated electrode-bipolar plate assembly that will address the limitations of the ICR. The integrated assembly was constructed using a single carbon felt with thermoplastic and thermoset polymers utilizing hot press method. Experimental results verify that the bipolar plate assembly exhibits reduced area specific resistance (ASR) due to the continuous electrical path. Additionally, from the charge/discharge cell test results, the integrated assembly shows improved cell performance. Therefore, the developed integrated electrode-bipolar plate assembly can serve as a substitute for the conventional bipolar plate and electrode assembly.

• Journal of Sensor Science and Technology
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• v.33 no.4
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• pp.224-229
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• 2024

Quantum dot light-emitting diodes (QD-LEDs) are emerging as next-generation displays owing to their high color purity, wide color gamut, and solution processability. Enhancing the efficiency of QD-LEDs involves preventing non-radiative recombination mechanisms, such as Auger and interfacial recombination. Generally, ZnO serves as the electron transport layer, which is known for its higher mobility compared to that of organic semiconductors and can lead to excessive electron injection. Some of the injected electrons pass through the quantum dot emissive layer and undergo non-radiative recombination near or within the organic hole transport layer (HTL), resulting in HTL degradation. Therefore, the implementation of electron blocking layers (EBLs) is essential; however, studies on all-solution-processed inverted InP QD-LEDs are limited. In this study, poly(9-vinylcarbazole) (PVK) is introduced as an EBL to mitigate HTL degradation and enhance the emission efficiency of inverted InP QD-LEDs. Using a single-carrier device, PVK was confirmed to effectively inhibit electron overflow into the HTL, even at extremely low thicknesses. The optimization of the PVK thickness also ensured minimal disruption of the hole-injection properties. Consequently, a 1.5-fold increase in the maximum luminance was achieved in the all-solution-processed inverted InP QD-LEDs with the EBL.

• Korean Journal of Organic Agriculture
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• v.23 no.4
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• pp.963-974
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• 2015

This study was conducted to determine the effects of organic vegetable cultivation on the soil physical properties in 33 farmlands under plastic greenhouse in Korea. We were investigated 5~8 farms per organic vegetable crops during the period from August to November 2014. The main cultivated vegetables were leafy lettuce (Lactuca sativa L.), Perilla leaves (Perilla frutescens var. Japonica Hara), cucumber (Cucumis sativus L.), strawberry (Fragaria ananassa L.) and tomato (Lycopersicon spp.). We have analyzed soil physical properties. The measured soil physical parameters were soil plough layer, soil hardness, penetration resistance, three soil phase, bulk density and Porosity. The measurement of the soil plough layer, soil hardness and penetration resistance were carried out direct in the fields, and the samples for other parameters were taken using the soil core method with approximately 20 mm diameter core collected from each organic vegetable field. Soil plough layer was average 36 cm and ranged between 30 and 50 cm, and slightly different depending on the sorts of vegetable cultivation. The soil hardness was $0.17{\pm}0.15{\sim}1.34{\pm}1.02$ in the topsoil, $0.55{\pm}0.34{\sim}1.15{\pm}0.62$ in the subsoil. It was not different between topsoil and subsoil, but showed a statistically significant difference between the leafy and fruit vegetables. Penetrometer resistance is one of the important soil physical properties that can determine both root elongation and yield. The increase in density under leafy vegetables resulted in a higher soil penetrometer resistance. Soil is a three-component system comprised of solid, liquid, and gas phases distributed in a complex geometry that creates large solidliquid, liquid-gas, and gas-solid interfacial areas. The three soil phases were dynamic and typically changed in organic vegetable soils under greenhouse. Porosity was characterized as range of $54.2{\pm}2.2{\sim}60.3{\pm}2.4%$. Most measured soils have bulk densities between 1.0 and $1.6gcm^{-3}$. To summarize the above results, Soil plough layer has been deepened in organic vegetable cultivation soils. Solid hardness (the hardness of the soil) and bulk density (suitable for the soil unit mass) have been lowered. Porosity (soil spatial content) was high such as a well known in organic farmlands. Important changes were observed in the physical properties according to the different vegetable cultivation. We have demonstrated that the physical properties of organic cultivated soils under plastic greenhouse were improved in the results of this study.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Journal of the Korean Applied Science and Technology
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• v.32 no.2
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• pp.215-225
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• 2015

Recently, the importance of energy saving and alternative energy is significantly increasing due to energy depletion and the phase change material (PCM) research for saving energy is also actively investigating. In this research, the membrane emulsification using SPG membrane was used to make various microencapsulated phase change material (MPCM) particles which were comprised of $Rubitherms^{(R)}$ (RT-21 and RT-24) core and silica coating. We investigated the pressure of the dispersion phase, the concentration of surfactant, and the ratio of $Rubitherm^{(R)}$ and silica to prepare various MPCM particles. The DSC and TGA were used to examine the heat stability and latent heat properties. Also, PSA, SEM, and optical microscopy were used to confirm the size of $Rubitherm^{(R)}$ particles and the thickness of silica shell. The average of particle size was $7-8{\mu}m$. And, FT-IR was also used to enforce the qualitative analysis. Finally, the MPCM particles obtained from membrane emulsification showed monodispersed size distribution and the heat stability and latent heat were kept up to 80% compared to pure $Rubitherm^{(R)}$. So, it can be effectively used for wallpaper, buildings and interior products for energy saving as PCMs.

• Composites Research
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• v.30 no.5
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• pp.323-330
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• 2017

In this study, multiscale analysis in which the information obtained from molecular dynamics simulation is applied to the continuum mechanics level is conducted to investigate the effects of clustering of silicon carbide nanoparticles reinforced into polypropylene matrix on mechanical behavior of nanocomposites. The elastic behavior of polymer nanocomposites is observed for various states of nanoparticulate agglomeration according to the model reflecting the degradation of interphase properties. In addition, factors which mainly affect the mechanical behavior of the nanocomposites are identified, and new index 'clustering density' is defined. The correlation between the clustering density and the elastic modulus of nanocomposites is understood. As the clustering density increases, the interfacial effect decreased and finally the improvement of mechanical properties is suppressed. By considering the random distribution of the nanoparticles, the range of elastic modulus of nanocomposites for same value of clustering density can be investigated. The correlation can be expressed in the form of exponential function, and the mechanical behavior of the polymer nanocomposites can be effectively predicted by using the nanoparticulate clustering density.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.234-240
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• 2001

The diffusion barrier properties of TiN by using Cu(Mg) alloy film have been investigated. Cu(Mg) alloy film was deposited on air-exposed TiN film. Upon annealing, interfacial MgO of 100 $\AA$ has been formed due to the reaction of Mg with oxygen existed on the surface of TiN. Combined MgO/TiN structure prevented the interdiffusion of Cu and Si up to $800^{\circ}C$. To improve the adhesion of Cu(Mg) alloy film to the TiN, TiN layer was treated by $O_2$ plasma, followed by vacuum annealing at $300^{\circ}C$. It was found that increased oxygen on the surface of TiN film by plasma treatment enhanced segregation of Mg toward the interface, resulting in the formation of dense MgO layer. Improved adhesion characteristics have been formed through this treatment. However, increased power of $O_2$ plasma led to the formation of TiO$_2$ and decreased the Mg content to be segregated to the interface, resulting in the decrease in adhesion property. In addition, the deposition of 50 ${\AA}$ Si on the TiN enhanced the adhesion of Cu(Mg) alloy to TiN without deteriorating the TiN diffusion barrier characteristics.