• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.9-12
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• 2004

This paper investigated the stability of Ta-Mo alloy on thin gate dielectric. Ta-Mo alloy was deposited by using co-sputtering process after thermal growing of 3.4nm and 4.2nm silicon dioxide. When the sputtering power of Ta and Mo were 100W and 70W, respectively, the suitable work function for NMOS gate electrode, 4.2eV, could obtain. To prove interface thermal stability of thin film gate dielectric and Ta-Mo alloy, rapid thermal annealing was performed at $600^{\circ}C$ and $700^{\circ}C$ for 10sec in Ar ambient. The results of interface reaction were surveyed by change of silicon dioxide thickness and work function after annealing process. Also, the reliability of alloy gate and gate dielectric could be confirmed by quantity of leakage current. Ta-Mo alloy was showed low sheet resistance and thermal stability, namely, little change of gate dielectric and work function, after $700^{\circ}C$ annealing process.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.3033-3038
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• 2007

In this research, Rayleigh instability of gas-liquid flow in annular pipe is studied in film boiling using viscous potential flow. Viscous potential flow is a kind of approximation of gas-liquid interface considering velocity field as potential including viscosity. A dispersion relation is obtained including the effect of heat and mass transfer and viscosity. New expression for dispersion relation in film boiling and critical wave number is obtained. Viscosity and heat and mass transfer have a stabilizing effect on instability and its effect appears in maximum growth rate and critical wave number. And the existence of marginal stability region is shown.

• Journal of Adhesion and Interface
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• v.20 no.4
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• pp.162-168
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• 2019

• Journal of Institute of Control, Robotics and Systems
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• v.8 no.9
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• pp.757-763
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• 2002

A newly designed haptic interface enables an operator to control a remote robot precisely. It transmits position information to the remote robot and feeds back the interaction force from it. A control algorithm of haptic interface has been studied to improve the robustness and stability to uncertain dynamic environments with a proposed contact dynamic model that incorporates human hand dynamics. A simplified hybrid parallel robot dynamic model fur a 6 DOF haptic device was proposed to from a real time control system, which does not include nonlinear components. LQC/LTR scheme was adopted in this paper for the compensation of un-modeled dynamics. The recovery of the farce from the remote robot at the haptic interface was demonstrated through the experiments.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.652-658
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• 1997

The phase stability in the interface of Sr-doped LaMnO3(LSM)/Gd-doped CeO2(CGO) was examined in this study in order to check the feasibility of using LSM as the cathode material in a low-temperature SOFC(solid oxide fuel cell) using CGO as the electrolyte. For the purpose, CGO powders of Ce0.82Gd0.18O0.91 and two LSM powders having different compositions, La0.9Sr0.1MnO3(LSM10) and La0.5Sr0.5MnO3(LSM50), were synthesized using Pechini method. Then, specimens having the LSM/CGO interface were prepared, heat-treated at 130$0^{\circ}C$ for up to 3 days, and analyzed by XRD and STEM/EDX. Face-centered cubic CGO powders of less than 10 nm size were obtained by calcination of polymeric precursor formed in the process at 45$0^{\circ}C$. Higher calcination temperature of $700^{\circ}C$ was necessary for monoclinic LSM10 and cubic LSM50 powders. LSM powders were coarser than CGO and observed to be in the range of 50~100 nm. No trace of LSM-CGO interaction product was found in the XRD pattern. Also it was known from the concentration profile in the vicinity of the interface that interdiffusion was occurred over only a small penetration depth of ~100 nm order.

• 대한치과보철학회:학술대회논문집
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• 2002.11a
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• pp.86-86
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• 2002

• Proceedings of the Korean Geotechical Society Conference
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• 1997.11a
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• pp.107-116
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• 1997

• KIPS Transactions on Software and Data Engineering
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• v.3 no.11
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• pp.503-510
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• 2014

With the development of electronic communication technology, the ship's navigational equipment is being digitized, and it has being studied touch-screen-based navigation user interface. However, due to the influence of environmental factors such as waves, it has a potential problem hazardous marine accident occurs due to incorrect operation, the systematic research in consideration of this be done do not. In this paper, we provide a user interface experimental model to verify the stability that takes into account the external environment of the touch-screen input on. Further, we simulated to verify that the interface of the touch screen, the effect of applying the input delay time and the size of the button is obtained through the experimental model proposed. It will be able to greatly contribute to studies of the interface robust touch screen user errors that can be analyzed by the experimental model is proposed to improve the ship, the overall system stability.

• Proceedings of the KOSOMBE Conference
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• v.1994 no.12
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• pp.71-74
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• 1994

In cementless total hip arthroplasty(THA), an initial stability of the femoral component is mandatory to achieve bony ingrowth and secondary long term fixation. Bone ingrowth depends strongly on relative micromotion and stress distributions at the interface. Primary stability of the femoral component can be obtained by minimizing the magnitude of relative micromotions at bone-prosthesis interface, Hence an accurate evaluation of interface behavior and stress/strain fields in the bone implant system may be relevant for better understanding of clinical situations and improving THA design. However, complete evaluation of load transfer in the bone remains difficult to assess experimentally, Hence, recently finite element method (FEM) was introduced in orthopaedic research field to fill the gap due to its unique capacity to evaluate stress in structure of complex shape, loading and material behavior. The authors developed the 3-dimensional numerical finite element model which is composed of totally 1179 elements off and 8 node blick. We also analyzed the micromotions at the bone-stem interface and mechanical behavior of existing bone prosthesis for a loading condition simulating the single leg stance. The result indicates that the values of relative motion for this well fit Multilock stem were $150{\mu}m$ in maximum, $82{\mu}m$ in minimum, and the largest relative motion developed in medial region of proximal femur with anterior-posterior direction. The proximal region of the bone was much larger in motion than the distal region and the stress pattern shows high stress concentration on the cortex near the tip of the stem. These findings indicates that the loading in the proximal femoral bone in the early postoperative situation can produce micromotions on the interface and clinically cementless TEA patient should not be allowed weight bearing strictly early in the postoperative period.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.180-180
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• 2010

Thin film transistors (TFTs) based on oxide semiconductors have emerged as a promising technology, particularly for active-matrix TFT-based backplanes. Currently, an amorphous oxide semiconductor, such as InGaZnO, has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and $SnO_2$, remain possible candidates as the channel layer. Inparticular, ZnO-based TFTs have attracted considerable attention, because of their superior properties that include wide bandgap (3.37eV), transparency, and high field effect mobility when compared with conventional amorphous silicon and polycrystalline silicon TFTs. There are some technical challenges to overcome to achieve manufacturability of ZnO-based TFTs. One of the problems, the stability of ZnO-based TFTs, is as yet unsolved since ZnO-based TFTs usually contain defects in the ZnO channel layer and deep level defects in the channel/dielectric interface that cause problems in device operation. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. Additionally, ZnO TFTs using a high quality interface fabricated by a two step atomic layer deposition (ALD) process showed improvement in device performance In this study, we report the fabrication of high performance ZnO TFTs with a $Si_3N_4$ gate insulator treated using plasma. The interface treatment using electron cyclotron resonance (ECR) $O_2$ plasma improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs.